Abstract: A micro LED carrier board is provided. The micro LED carrier board includes a substrate structure having a first surface and a second surface and having a central region and a peripheral region on the outside of the central region. The micro LED carrier board includes a plurality of micro LED elements forming an array and on the second surface of the substrate structure. The micro LED carrier board includes a patterned structure formed on the first surface and the second surface. The patterned structure has a first pattern density in the central region and a second pattern density in the peripheral region, and the first pattern density is different from the second pattern density.

Abstract: A carrier structure suitable for transferring or supporting a plurality of micro devices includes a carrier and a plurality of transfer units. The carrier has a carrier surface and a plurality of recesses disposed on the carrier surface. The transfer units are respectively disposed in the recesses and a plurality of transferring surfaces are exposed. Each micro device has a device surface. The transferring surface of each transfer unit is configured to be connected to the device surface of the corresponding micro device. A micro device structure including the carrier structure is also provided.

Abstract: A micro semiconductor structure is provided. The micro semiconductor structure includes a substrate, at least one supporting layer, and at least one micro semiconductor device. The supporting layer includes at least one upper portion and a bottom portion, wherein the upper portion extends in a first direction. The length L1 of the upper portion in the first direction is greater than the length L2 of the bottom portion in the first direction. Furthermore, the bottom surface of the micro semiconductor device is in direct contact with the upper portion of the supporting layer.

Abstract: A micro semiconductor structure is provided. The micro semiconductor structure includes a substrate, a plurality of micro semiconductor devices disposed on the substrate, and a first supporting layer disposed between the substrate and the micro semiconductor devices. Each of the micro semiconductor devices has a first electrode and a second electrode disposed on a lower surface of the micro semiconductor devices. The lower surface includes a region, wherein the region is between the first electrode and the second electrode. An orthographic projection of the first supporting layer on the substrate at least overlaps an orthographic projection of a portion of the region on the substrate. The first supporting layer directly contacts the region.

Abstract: A transparent display panel with a light-transmitting substrate, a plurality of top-emitting micro light emitting diodes, a plurality of bottom-emitting micro light emitting diodes, and a light shielding layer. The light transmissive substrate has a surface. These top-emitting micro light emitting diodes and these bottom-emitting micro light emitting diodes are disposed on the surface of the light transmissive substrate. The bottom-emitting micro light emitting diodes has an epitaxial structure and a light shielding member, the epitaxial structure has a pair of upper and lower surfaces on the opposite sides, the lower surface faces toward the light transmissive substrate, and the light shielding member is disposed on the upper surface to shield the light emitted by the bottom-emitting micro light emitting diodes towards the upper surface.

Abstract: A micro light-emitting device includes an epitaxial structure, a first type pad, a current commanding structure and an insulating layer. The epitaxial structure includes a first type semiconductor layer, a light-emitting layer and a second type semiconductor layer. The first type pad is disposed on the epitaxial structure and electrically connected to the first type semiconductor layer. The current commanding structure is disposed on the epitaxial structure and electrically connected to the second type semiconductor layer. An orthogonal projection area of the current commanding structure on the second type semiconductor layer is smaller than a surface area of a surface of the second type semiconductor layer. The insulating layer contacts a portion of the current commanding structure and a portion of the surface of the second type semiconductor layer. The insulating layer has an opening exposing at least a portion of the portion of the current commanding structure.

Abstract: A micro LED display panel includes a display area, a plurality of micro light-emitting elements and a plurality of micro control elements. The plurality of micro light-emitting elements is disposed in the display area and include a plurality of first color micro LEDs and a plurality of second color micro LEDs. A light wavelength of each of the first color micro LEDs is different from a light wavelength of each of the second color micro LEDs. The plurality of micro control elements is disposed in the display area, and include a plurality of first color micro circuit-chips and a plurality of second color micro circuit-chips. The plurality of first color micro circuit-chips control the plurality of first color micro LEDs, and the plurality of second color micro circuit-chips control the plurality of second color micro LEDs.

Abstract: A display panel comprises a first substrate and a shading layer. The first substrate comprises a plurality of pixel zones arranging in an array form. Each of the pixel zones comprises a first color LED and a second color LED. The first color LED comprise a first light-emitting surface in a display direction. The second color LED comprise a second light-emitting surface in the display direction. An area of the first light-emitting surface is larger than an area of the second light-emitting surface. The shading layer is disposed in the plurality of pixel zones, and the shading layer overlaps some of the first light-emitting surfaces at the display direction.

Abstract: A micro-LED display panel including a substrate, a plurality of micro-LEDs, and a plurality of reinforced structures is provided. The micro-LEDs are disposed at a side of the substrate, wherein each of the micro-LEDs comprises an epitaxial layer and an electrode layer electrically connected to the epitaxial layer, and the electrode layer are located between the epitaxial layers and the substrate. Each of the micro-LEDs is electrically connected to the substrate through the corresponding electrode layer. Each of electrode layers includes a first electrode and a second electrode. The reinforced structures are disposed between the micro-LEDs and the substrate respectively, and each of the reinforced structures is located between the corresponding the first electrode and the second electrode. A Young's modulus of each of reinforced structures is smaller than a Young's modulus of the corresponding electrode layer.

Abstract: A display apparatus includes a driving substrate and a plurality of micro light-emitting devices (LEDs). The driving substrate has a plurality of pixel regions. The plurality micro LEDs are disposed in in each of the pixel regions and electrically connected to the driving substrate. Orthogonal projection areas of the micro LEDs in each of the pixel regions on the driving substrate are equal. At least two micro LEDs in each of the pixel regions have different effective light-emitting areas.

Abstract: A micro light-emitting device includes an epitaxial structure, a first type pad, a second type pad, and a current commanding structure. The epitaxial structure includes a first type semiconductor layer, a light-emitting layer, and a second type semiconductor layer. The first type pad is electrically connected to the first type semiconductor layer. The second type pad is electrically connected to the second type semiconductor layer. The current commanding structure is disposed between the second type semiconductor layer and the second type pad. A contact resistance between the second type semiconductor layer and the current commanding structure is smaller than a contact resistance between the second type semiconductor layer and the second type pad. An orthogonal projection area of the current commanding structure on the second type semiconductor layer is smaller than an orthogonal projection area of the second type pad on the second type semiconductor layer.

Abstract: A display panel of micro light emitting diode comprises a substrate, a plurality of micro light emitting diodes, a plurality of driving chips and a shading layer. The substrate having a first surface and a display area. The plurality of micro light emitting diodes is disposed on the first surface of the substrate and is located in the display area, with each of the micro light emitting diodes having a light emitting surface while the light emitting surface is away from the first surface of the substrate. The plurality of driving chips is disposed on the first surface of the substrate and is located in the display area, with each driving chip electrically connecting to at least one of the micro light emitting diodes. The shading layer is disposed on the first surface of the substrate and covering the driving chips while exposing the light emitting surfaces.

Abstract: A display substrate comprises a base board and a first bonding pad. The base board comprises a first surface having a first bonding district. The first bonding pad is disposed on the first surface. The first bonding pad is configured to electrically connect to a first electrode of a light emitting component in the first bonding district. The first bonding pad comprises a main bonding portion and an auxiliary bonding portion, wherein at least a part of an orthogonal projection of the main bonding portion on the base board is in the first bonding district. The auxiliary bonding portion electrically connects to the main bonding portion, wherein at least a part of an orthogonal projection of the auxiliary bonding portion on the base board is outside the first bonding district. There is a gap between the main bonding portion and the auxiliary bonding portion.

Abstract: A micro light emitting diode display panel including a substrate, a plurality of control elements, and a plurality of light emitting units is provided. The control elements and the light emitting units are disposed on the substrate. Each of the light emitting units is electrically connected to one of the control elements, and each of the light emitting units includes a plurality of micro light emitting diodes. The micro light emitting diodes at least have a red micro light emitting diode, a green micro light emitting diode, and a blue micro light emitting diode. A shortest distance between the green micro light emitting diode and the one of the control elements is less than a shortest distance between the blue micro light emitting diode and the one of the control elements.

Abstract: A structure with micro light-emitting device includes a substrate, at least one micro light-emitting device, at least one holding structure and a buffer layer. The micro light-emitting device is disposed on the substrate. The holding structure is arranged at an edge of the micro light-emitting device, and is located between the substrate and the micro light-emitting device and directly contacts with the substrate. The buffer layer is disposed between the micro light-emitting device, the holding structures and the substrate.

Abstract: A nitride semiconductor structure and a semiconductor light emitting device are revealed. The semiconductor light emitting device includes a substrate disposed with a first type doped semiconductor layer and a second type doped semiconductor layer. A light emitting layer is disposed between the first type doped semiconductor layer and the second type doped semiconductor layer. The second type doped semiconductor layer is doped with a second type dopant at a concentration larger than 5×1019 cm ?3 while a thickness of the second type doped semiconductor layer is smaller than 30 nm. Thereby the semiconductor light emitting device provides a better light emitting efficiency.

Abstract: A carrier structure suitable for transferring or supporting a plurality of micro devices including a carrier and a plurality of transfer units is provided. The transfer units are disposed on the carrier. Each of the transfer units includes a plurality of transfer parts. Each of the transfer parts has a transfer surface. Each of the micro devices has a device surface. The transfer surfaces of the transfer parts of each of the transfer units are connected to the device surface of corresponding micro device. The area of each of the transfer surfaces is smaller than the area of the device surface of the corresponding micro device. A micro device structure using the carrier structure is also provided.

Abstract: A display panel and a repairing method thereof. The display panel includes micro LEDs and a circuit substrate. The circuit substrate includes first wires, second wires and connecting circuits. Respective one of the connecting circuits is configured to be electrically connected to respective one of the micro LEDs. Each of the connecting circuits includes a first pad, a second pad, a third pad and a connecting wire. The first pad is configured to be electrically connected to the corresponding micro LED and one of the first wires. The first and second pads are separated by a first gap. The second pad is configured to be electrically connected to one of the second wires. The second and third pads are separated by a second gap. The connecting wire is connected to the second pad and the third pad.

Abstract: A method for expanding spacings in a light-emitting element array includes the following steps of: providing a light-emitting element array unit including a stretchable supporting film, and a plurality of light-emitting elements disposed on the stretchable supporting film and arranged into a two-dimensional array; stretching the stretchable supporting film along a first direction and a second direction. The first direction and the second direction respectively correspond to a row direction and a column direction of the two-dimensional array.

Abstract: A micro-LED display panel including a substrate, a plurality of micro-LEDs, and a plurality of reinforced structures is provided. The micro-LEDs are disposed at a side of the substrate, wherein each of the micro-LEDs comprises an epitaxial layer and an electrode layer electrically connected to the epitaxial layer, and the electrode layer are located between the epitaxial layers and the substrate. Each of the micro-LEDs is electrically connected to the substrate through the corresponding electrode layer. Each of electrode layers includes a first electrode and a second electrode. The reinforced structures are disposed between the micro-LEDs and the substrate respectively, and each of the reinforced structures is located between the corresponding the first electrode and the second electrode. A Young's modulus of each of reinforced structures is smaller than a Young's modulus of the corresponding electrode layer.