Abstract: A micro-LED display panel including a substrate, an anisotropic conductive film, and a plurality of micro-LEDs is provided. The anisotropic conductive film is disposed on the substrate. The micro-LEDs and the anisotropic conductive film are disposed at the same side of the substrate, and the micro-LEDs are electrically connected to the substrate through the anisotropic conductive film. Each of the micro-LEDs includes an epitaxial layer and an electrode layer electrically connected to the epitaxial layer, and the electrode layers comprises a first electrode and a second electrode which are located between the substrate and the corresponding epitaxial layer. A ratio of a thickness of each of the electrode layers to a thickness of the corresponding epitaxial layer ranges from 0.1 to 0.5, and a gap between the first electrode and the second electrode of each of the micro-LEDs is in a range of 1 ?m to 30 ?m.

Abstract: A structure with micro light-emitting device includes a substrate, at least one micro light-emitting device, at least one holding structure and a buffer layer. The micro light-emitting device is disposed on the substrate. The holding structure is arranged at an edge of the micro light-emitting device, and is located between the substrate and the micro light-emitting device and directly contacts with the substrate. The buffer layer is disposed between the micro light-emitting device, the holding structures and the substrate.

Abstract: A micro light emitting diode display panel including a plurality of pixels and a control element is provided. One of the pixels include a first sub-pixel. The first sub-pixel includes two micro light emitting diodes having different light wavelengths and controlled independently. The control element controls driving currents to the two micro light emitting diodes according to a gray level of the first sub-pixel, wherein a ratio of the driving current of the micro light emitting diode with larger light wavelength to the driving current of the micro light emitting diode with smaller light wavelength increases as the gray level of the first sub-pixel increases. A driving method of the micro light emitting diode display panel is also provided.

Abstract: A micro light emitting diode display panel including a substrate, a plurality of control elements, and a plurality of light emitting units is provided. The control elements and the light emitting units are disposed on the substrate. Each of the light emitting units is electrically connected to one of the control elements, and each of the light emitting units includes a plurality of micro light emitting diodes. The micro light emitting diodes at least have a red micro light emitting diode, a green micro light emitting diode, and a blue micro light emitting diode. A shortest distance between the green micro light emitting diode and the one of the control elements is less than a shortest distance between the blue micro light emitting diode and the one of the control elements.

Abstract: A micro light-emitting device includes an epitaxial structure, a first type pad, a second type pad, and a current commanding structure. The epitaxial structure includes a first type semiconductor layer, a light-emitting layer, and a second type semiconductor layer. The first type pad is electrically connected to the first type semiconductor layer. The second type pad is electrically connected to the second type semiconductor layer. The current commanding structure is disposed between the second type semiconductor layer and the second type pad. A contact resistance between the second type semiconductor layer and the current commanding structure is smaller than a contact resistance between the second type semiconductor layer and the second type pad. An orthogonal projection area of the current commanding structure on the second type semiconductor layer is smaller than an orthogonal projection area of the second type pad on the second type semiconductor layer.

Abstract: A display panel includes a driving substrate and a plurality of micro light emitting diodes (LEDs). The driving substrate has a plurality of pixel regions. The micro LEDs are located on the driving substrate and arranged apart from each other. The micro LEDs at least includes a plurality of first micro LEDs and a plurality of second micro LEDs. Each of the pixel regions is at least provided with one first micro LED and one second micro LED, and the first micro LED and the second micro LED are electrically connected in series.

Abstract: A semiconductor structure includes a first-type doped semiconductor layer, a light emitting layer, a second-type doped semiconductor layer comprising AlxInyGa1-x-yN layers, at least one GaN based layer, and an ohmic contact layer. The light emitting layer is disposed on the first-type doped semiconductor layer, and the second-type doped semiconductor layer is disposed on the light emitting layer. The AlxInyGa1-x-yN layers stacked on the light emitting layer, where 0<x<1, 0?y<1, and 0<x+y<1, and the GaN based layer interposed between two of the AlxInyGa1-x-yN layers, and the ohmic contact layer is disposed on the AlxInyGa1-x-yN layers.

Abstract: A nitride semiconductor structure and a semiconductor light emitting device including the same are revealed. The nitride semiconductor structure mainly includes a stress control layer disposed between a light emitting layer and a p-type carrier blocking layer. The p-type carrier blocking layer is made from AlxGa1-xN (0<x<1) while the stress control layer is made from AlxInyGa1-x-yN (0<x<1, 0<y<1, 0<x+y<1). The light emitting layer has a multiple quantum well structure formed by a plurality of well layers and barrier layers stacked alternately. There is one well layer disposed between the two barrier layers. Thereby the stress control layer not only improves crystal quality degradation caused by lattice mismatch between the p-type carrier blocking layer and the light emitting layer but also reduces effects of compressive stress on the well layer caused by material differences.

Abstract: A method for expanding spacings in a light-emitting element array includes the following steps of: providing a light-emitting element array unit including a stretchable supporting film, and a plurality of light-emitting elements disposed on the stretchable supporting film and arranged into a two-dimensional array; stretching the stretchable supporting film along a first direction and a second direction. The first direction and the second direction respectively correspond to a row direction and a column direction of the two-dimensional array.

Abstract: A nitride semiconductor structure and a semiconductor light emitting device are revealed. The semiconductor light emitting device includes a substrate disposed with a first type doped semiconductor layer and a second type doped semiconductor layer. A light emitting layer is disposed between the first type doped semiconductor layer and the second type doped semiconductor layer. The second type doped semiconductor layer is doped with a second type dopant at a concentration larger than 5×1019 cm ?3 while a thickness of the second type doped semiconductor layer is smaller than 30 nm. Thereby the semiconductor light emitting device provides a better light emitting efficiency.

Abstract: A semiconductor structure includes a first-type doped semiconductor layer, a light emitting layer, a second-type doped semiconductor layer comprising AlxInyGal-x-yN layers, at least one GaN based layer, and an ohmic contact layer. The light emitting layer is disposed on the first-type doped semiconductor layer, and the second-type doped semiconductor layer is disposed on the light emitting layer. The AlxInyGal-x-yN layers stacked on the light emitting layer, where 0<x<1, 0?y<1, and 0<x+y<1, and the GaN based layer interposed between two of the AlxInyGal-x-yN layers, and the ohmic contact layer is disposed on the AlxInyGal-x-yN layers.

Abstract: A nitride semiconductor structure and a semiconductor light emitting device including the same are revealed. The nitride semiconductor structure mainly includes a stress control layer disposed between a light emitting layer and a p-type carrier blocking layer. The p-type carrier blocking layer is made from AlxGa1-xN (0<x<1) while the stress control layer is made from AlxInyGa1-x-yN (0<x<1, 0<y<1, 0<x+y<1). The light emitting layer has a multiple quantum well structure formed by a plurality of well layers and barrier layers stacked alternately. There is one well layer disposed between the two barrier layers. Thereby the stress control layer not only improves crystal quality degradation caused by lattice mismatch between the p-type carrier blocking layer and the light emitting layer but also reduces effects of compressive stress on the well layer caused by material differences.

Abstract: A nitride semiconductor structure and a semiconductor light emitting device are revealed. The semiconductor light emitting device includes a substrate disposed with a first type doped semiconductor layer and a second type doped semiconductor layer. A light emitting layer is disposed between the first type doped semiconductor layer and the second type doped semiconductor layer. The second type doped semiconductor layer is doped with a second type dopant at a concentration larger than 5×1019 cm?3 while a thickness of the second type doped semiconductor layer is smaller than 30 nm. Thereby the semiconductor light emitting device provides a better light emitting efficiency.

Abstract: A semiconductor light emitting device including an N-type semiconductor layer, a P-type semiconductor layer, a light emitting layer and a strain relief layer is provided. The light emitting layer is disposed between the N-type semiconductor layer and the P-type semiconductor layer, and the light emitting layer is a multiple quantum well structure. The strain relief layer is disposed between the light emitting layer and the N-type semiconductor layer, and is made of InxGa1-xN, where 0<x<1. The difference between any two values of x corresponded to any two positions in the strain relief layer is greater than ?0.01 and less than 0.01. The thickness of the strain relief layer is larger than the thickness of each well layer of the multiple quantum well structure.

Abstract: A nitride semiconductor structure and a semiconductor light emitting device including the same are revealed. The nitride semiconductor structure mainly includes a stress control layer disposed between a light emitting layer and a p-type carrier blocking layer. The p-type carrier blocking layer is made from AlxGa1-xN (0<x<1) while the stress control layer is made from AlxInyGa1-x-yN (0<x<1, 0<y<1, 0<x+y<1). The light emitting layer has a multiple quantum well structure formed by a plurality of well layers and barrier layers stacked alternately. There is one well layer disposed between the two barrier layers. Thereby the stress control layer not only improves crystal quality degradation caused by lattice mismatch between the p-type carrier blocking layer and the light emitting layer but also reduces effects of compressive stress on the well layer caused by material differences.

Abstract: A semiconductor light emitting device including an N-type semiconductor layer, a P-type semiconductor layer, a light emitting layer and a strain relief layer is provided. The light emitting layer is disposed between the N-type semiconductor layer and the P-type semiconductor layer, and the light emitting layer is a multiple quantum well structure. The strain relief layer is disposed between the light emitting layer and the N-type semiconductor layer, and is made of InxGa1-xN, where 0<x<1. The difference between x's at any two positions in the strain relief layer is greater than ?0.01 and less than 0.01. The thickness of the strain relief layer is larger than the thickness of each well layer of the multiple quantum well structure.

Abstract: A semiconductor light-emitting device including an N-type semiconductor layer, a plurality of P-type semiconductor layers, a light-emitting layer, and a contact layer is provided. The light-emitting layer is disposed between the N-type semiconductor layer and the whole of the P-type semiconductor layers. The P-type semiconductor layers are disposed between the contact layer and the light-emitting layer. All the P-type semiconductor layers between the light-emitting layer and the contact layer include aluminum.

Abstract: A method for transferring light-emitting elements onto a package substrate includes: providing a light-emitting unit including a supporting substrate and a plurality of light-emitting elements, each of the light-emitting elements being removably connected to the supporting substrate and having a surface opposite to the supporting substrate; disposing the light-emitting unit spacingly above a package substrate in such a manner that the surface of each of the light-emitting elements faces the package substrate; and disconnecting the light-emitting elements from the supporting substrate to allow the light-emitting elements to fall onto the package substrate by gravity, so as to connect the light-emitting elements with the package substrate in a non-contact transferring method.

Abstract: A semiconductor light-emitting device including a first N-type semiconductor layer, a P-type semiconductor layer, and a light-emitting layer is provided. The first N-type semiconductor layer contains aluminum, and the concentration of the N-type dopant thereof is greater than or equal to 5×1018 atoms/cm3. The light-emitting layer is disposed between the first N-type semiconductor layer and the P-type semiconductor layer. A manufacturing method of a semiconductor light-emitting device is also provided.

Abstract: A nitride semiconductor structure and a semiconductor light emitting device are revealed. The semiconductor light emitting device includes a substrate disposed with a first type doped semiconductor layer and a second type doped semiconductor layer. A light emitting layer is disposed between the first type doped semiconductor layer and the second type doped semiconductor layer. The second type doped semiconductor layer is doped with a second type dopant at a concentration larger than 5×1019 cm?3 while a thickness of the second type doped semiconductor layer is smaller than 30 nm. Thereby the semiconductor light emitting device provides a better light emitting efficiency.