Abstract: A data migration method and an apparatus are provided. The method is as follows: sending, by a first storage system, a location update request to a location server, where the location update request is used to indicate the location server to update location information of a first bucket from being located in a second storage system to being located in the first storage system; migrating data in a first bucket from the second storage system; receiving a data access request, where the data access request is used to access the data in the first bucket; and determining based on a type of the data access request and a migration status of the data, that the first storage system or the second storage system processes the data access request.

Abstract: A package includes a package component, a device die over and bonded to the package component, a metal cap having a top portion over the device die, and a thermal interface material between and contacting the device die and the metal cap. The thermal interface material includes a first portion directly over an inner portion of the device die, and a second portion extending directly over a corner region of the device die. The first portion has a first thickness. The second portion has a second thickness greater than the first thickness.

Abstract: A semiconductor device structure, along with methods of forming such, are described. The structure includes a source/drain region and a first conductive feature disposed below the source/drain region. The first conductive feature is electrically connected to the source/drain region. The structure further includes a second conductive feature disposed over the source/drain region, and the second conductive feature is electrically connected to the source/drain region. The structure further includes a third conductive feature disposed on and in contact with a first portion of the second conductive feature and a dielectric layer disposed on and in contact with a second portion of the second conductive feature.

Abstract: A multiport passive photonic light circuit chip has multiple waveguides written in at least two layers on a glass substrate. Some waveguides connect transmitting and receiving ports of an optical channel, some waveguides redirect a fraction of optical signals to some other receiving ports, and waveguides have circular cross-sectional shapes wherein a refractive index contrast is in the range of 0.2% to 2%.

Abstract: A semiconductor device is provided. The semiconductor device has a stack of parallel metal gates formed on a first side of a substrate, a first pair of insulation regions extending across the stack of parallel metal gates, a second pair of insulation regions replacing two of the parallel metal gates, a first isolated region enclosed by the first and second pairs of insulation layers, a first via formed within the isolated region, and an insulation layer replacing the metal gates located within the isolated region. Tree or more metal gates are located within the isolated region, and the first via extends through a portion of a center one of the three metal gates within the isolated region.

Abstract: Semiconductor device structures are provided. The semiconductor device structure includes a substrate and a first fin structure protruding from the substrate. The semiconductor device structure further includes an isolation layer formed around the first fin structure and covering a sidewall of the first fin structure and a gate stack formed over the first fin structure and the isolation layer. The semiconductor device structure further includes a first source/drain structure formed over the first fin structure and spaced apart from the gate stack and a contact structure formed over the first source/drain structure. The semiconductor device structure includes a dielectric structure formed through the contact structure. In addition, the contact structure and the dielectric structure has a first slope interface that slopes downwardly from a top surface of the contact structure to a top surface of the isolation layer.

Abstract: A semiconductor device includes parallel channel members, a gate structure, source/drain features, a silicide layer, and a source/drain contact. The parallel channel members are spaced apart from one another. The gate structure is wrapping around the channel members. The source/drain features are disposed besides the channel members and at opposite sides of the gate structure. The silicide layer is disposed on and in direct contact with the source/drain features. The source/drain contact is disposed on the silicide layer, wherein the source/drain contact includes a first source/drain contact and a second source/drain contact stacked on the first source/drain contact, and the second source/drain contact is separate from the silicide layer by the first source/drain contact.

Abstract: A patch cord for transmitting between a single mode fiber (SMF) and a multi-mode fiber (MMFs) has a MMF, SMF, and a photonic crystal fiber (PCF) with a hollow core placed between the SMF and MMF. A mode field diameter (MFD) of the PCF hollow core section is in the range of 16 to 19 microns, the length of the PCF is between 1 cm to 10 cm, the MMF has 50±2 microns core diameter, the SMF has a 6-9 microns core diameter, and the coupling between the PCF mode to the MMF fundamental mode is maximized.

Abstract: A battery module includes a battery, a main control board, and an elastic conduction sheet. The elastic conduction sheet has elasticity. The battery is electrically connected to the main control board by the elastic conduction sheet. One end of the elastic conduction sheet is welded to the battery and another end of the elastic conduction sheet is welded to the main control board. An atomizer includes an atomization compartment and the preceding battery module. The battery module is connected to the atomization compartment and configured to supply power to the atomization compartment.

Abstract: A semiconductor device and the manufacturing method thereof are described. The device includes semiconductor channel sheets, source and drain regions and a gate structure. The semiconductor channel sheets are arranged in parallel and spaced apart from one another. The source and drain regions are disposed beside the semiconductor channel sheets. The gate structure is disposed around and surrounding the semiconductor channel sheets. The silicide layer is disposed on the source region or the drain region. A contact structure is disposed on the silicide layer on the source region or the drain region. The contact structure includes a metal contact and a liner, and the silicide layer is in contact with the metal contact, and the liner is separate from the silicide layer by the metal contact.

Abstract: A device includes a first row of active areas, a second row of active areas, and a first power via. The first row of active areas includes first active areas that extend in a first direction and second active areas that extend in the first direction. Each of the first active areas has a first width in a second direction and each of the second active areas has a second width in the second direction that is smaller than the first width. The second row of active areas is situated above or below the first row of active areas and includes third active areas that extend in the first direction. Each of the third active areas has the second width in the second direction. The first power via extends in a third direction between a transistor level of the device and a backside metal layer of the device and is situated between the first row of active areas and the second row of active areas.

Abstract: To reduce a thickness variation of a spin-on coating (SOC) layer that is applied over a plurality of first and second trenches with different pattern densities as a bottom layer in a photoresist stack, a two-step thermal treatment process is performed on the SOC layer. A first thermal treatment step in the two-step thermal treatment process is conducted at a first temperature below a cross-linking temperature of the SOC layer to cause flow of the SOC layer, and a second thermal treatment step in the two-step thermal treatment process is conducted at a second temperature to cause cross-linking of the SOC layer.

Abstract: The present disclosure describes a method to form a backside power rail (BPR) semiconductor device with an air gap. The method includes forming a fin structure on a first side of a substrate, forming a source/drain (S/D) region adjacent to the fin structure, forming a first S/D contact structure on the first side of the substrate and in contact with the S/D region, and forming a capping structure on the first S/D contact structure. The method further includes removing a portion of the first S/D contact structure through the capping structure to form an air gap and forming a second S/D contact structure on a second side of the substrate and in contact with the S/D region. The second side is opposite to the first side.

Abstract: A pixel array substrate, including multiple pixel structures, multiple data lines, multiple scan line groups, multiple transfer line groups, multiple connection terminal groups, and multiple bridge line groups, is provided. The multiple data lines are electrically connected to the multiple pixel structures and arranged in a first direction. Each scan line group includes multiple scan lines arranged in a second direction. The multiple scan lines of the multiple scan line groups are electrically connected to the multiple pixel structures. Each transfer line group includes multiple transfer lines arranged in the first direction. The multiple transfer lines of each transfer line group are electrically connected to the multiple scan lines of a corresponding scan line group. The bridge line groups are structurally separated. Each bridge line group is electrically connected to a corresponding transfer line group and a corresponding connection terminal group.

Abstract: A semiconductor device and a manufacturing method therefor are disclosed. The method includes: providing a substrate of a first conductivity type; forming doped regions of a second conductivity type in the substrate, the doped regions including adjacent first and second drift regions, wherein the second conductivity type is opposite to the first conductivity type; forming a polysilicon film on the substrate, the polysilicon film covering the doped regions; forming patterned photoresist on the polysilicon film, which covers the first and second drift regions, and in which the polysilicon film above a reserved region for a body region between the first and second drift regions is exposed; and forming the body region of the first conductivity type in the reserved region by performing a high-energy ion implantation process, the body region having a top surface that is flush with top surfaces of the doped regions, the body region having a bottom surface that is not higher than bottom surfaces of the doped regions.

Abstract: A utility knife is provided, including: a shell; a swingable lever, pivoted to the shell and protrusive outside the shell; a blade carrier, slidably disposed in the shell, including a notch; a linkage mechanism, including a plurality of linkages rotatably connected to one another, two of the plurality of linkages rotatably connected to the shell and the blade carrier, respectively; an elastic recovery mechanism, connected with the blade carrier and the shell; and a safety member, movably disposed on the shell, including a projection; wherein when the projection is located within the notch, the blade carrier is blocked by the projection and non-movable relative to the shell; when the projection is located out of the notch and the linkage mechanism is driven by the swingable lever to push the blade carrier, the blade carrier is movable relative to the shell to project out from the shell.

Abstract: A semiconductor device includes a first substrate and a first device layer. The first device layer is disposed on the first substrate and includes a first region and a second region of the first device layer. The first device layer includes at least one first device and a sensor aside the at least one first device. The sensor includes a first resistor with a first non-linear temperature resistance curve and a second resistor with a second non-linear temperature resistance curve. A temperature of the sensor is linearly related to a difference between a first resistance of the first resistor at the temperature and a second resistance of the second resistor at the temperature.

Abstract: A transmit in-phase quadrature (IQ) amplifier includes a common gain stage to receive an input signal and to generate an amplified signal. The amplifier includes an IQ poly-phase filter coupled to the common gain stage to receive the amplified signal from the common gain stage and outputs a four-phase signal. The amplifier includes an in-phase (I) phase switching gain stage coupled to the IQ poly-phase filter to receive I components of the four-phase signal and outputs an amplified phase switching I signal. The amplifier includes a quadrature (Q) phase switching gain stage coupled to the IQ poly-phase filter to receive Q components of the four-phase signal and outputs an amplified phase switching Q signal.

Abstract: A raindrop sensor device, including a substrate, a raindrop sensor element, a first light emitting diode, and an active element, is provided. The raindrop sensor element is located on the substrate and includes a first electrode and a second electrode separated from each other. The first light emitting diode is located on the substrate and is electrically connected to the first electrode. The first electrode and the second electrode are closer to the substrate than the active element. The active element is located on the substrate and is electrically connected to the first light emitting diode.

Abstract: A method of forming a semiconductor structure is provided. Two wafers are first bonded by oxide bonding. Next, the thickness of a first wafer is reduced using an ion implantation and separation approach, and a second wafer is thinned by using a removal process. First devices are formed on the first wafer, and a carrier is then attached over the first wafer, and an alignment process is performed from the bottom of the second wafer to align active regions of the second wafer for placement of the second devices with active regions of the first wafer for placement of the first devices. The second devices are then formed in the active regions of the second wafer. Furthermore, a via structure is formed through the first wafer, the second wafer and the insulation layer therebetween to connect the first and second devices on the two sides of the insulation layer.