Abstract: A method for fabricating a semiconductor device, the method including growing a first semiconductor structure comprising a first semiconductor material on a surface of a substrate, wherein growing the first semiconductor structure includes forming a semiconductor particle comprising the first semiconductor material on a second semiconductor structure of the semiconductor device. The method further includes forming a protection layer of a second semiconductor material on the first semiconductor structure, wherein forming the protection layer includes forming the protection layer on the semiconductor particle. The method further includes removing a portion of the protection layer, wherein removing the portion of the protection layer includes fully removing the protection layer on the semiconductor particle and the semiconductor particle.

Abstract: A semiconductor device having a substrate including a major surface, a gate stack comprising a sidewall over the substrate and a spacer over the substrate adjoining the sidewall of the gate stack. The spacer having a bottom surface having an outer point that is the point on the bottom surface farthest from the gate stack. An isolation structure in the substrate on one side of the gate stack has an outer edge closest to the spacer. A strained material below the major surface of the substrate disposed between the spacer and the isolation structure having an upper portion and a lower portion separated by a transition plane at an acute angle to the major surface of the substrate.

Abstract: A power bank apparatus with speaker combines the function of power bank and the function of speaker. The power bank apparatus not only charges the portable electronic apparatuses but also supplies power to the internal speaker. The voice or music of the portable electronic apparatus is amplified by the speaker of the power bank apparatus to improve the quality of the voice or music.

Abstract: A method for fabricating a semiconductor device, the method including growing a first semiconductor structure comprising a first semiconductor material on a surface of a substrate, wherein growing the first semiconductor structure includes forming a semiconductor particle comprising the first semiconductor material on a second semiconductor structure of the semiconductor device. The method further includes forming a protection layer of a second semiconductor material on the first semiconductor structure, wherein forming the protection layer includes forming the protection layer on the semiconductor particle. The method further includes removing a portion of the protection layer, wherein removing the portion of the protection layer includes fully removing the protection layer on the semiconductor particle and the semiconductor particle.

Abstract: A method for fabricating a semiconductor device is disclosed. A strained material is formed in a cavity of a substrate and adjacent to an isolation structure in the substrate. The strained material has a corner above the surface of the substrate. The disclosed method provides an improved method for forming the strained material adjacent to the isolation structure with an increased portion in the cavity of a substrate to enhance carrier mobility and upgrade the device performance. In an embodiment, the improved formation method is achieved using an etching process to redistribute the strained material by removing at least a portion of the corner to be located in the cavity.

Abstract: The present disclosure discloses an exemplary method for fabricating a semiconductor device comprises selectively growing a material on a top surface of a substrate; selectively growing a protection layer on the material; and removing a portion of the protection layer in an etching gas.

Abstract: A connection base is disclosed. The connection base includes a first connection port, a second connection port, a charging unit, a first electric power conversion unit, and a second electric power conversion unit. The first electric power conversion unit is for converting an input voltage to a first output voltage, and for transmitting the first output voltage to the charging unit. The charging unit is for receiving the first output voltage and outputting a charging voltage, in order to charge the electric power bank device which is detachably connected to the first connection port. The second electric power conversion unit is for receiving and converting a second output voltage of the electric power bank device to a supply voltage, and sending the supply voltage to the inverter which is detachably connected to the second connection port.

Abstract: A semiconductor device having a substrate including a major surface, a gate stack comprising a sidewall over the substrate and a spacer over the substrate adjoining the sidewall of the gate stack. The spacer having a bottom surface having an outer point that is the point on the bottom surface farthest from the gate stack. An isolation structure in the substrate on one side of the gate stack has an outer edge closest to the spacer. A strained material below the major surface of the substrate disposed between the spacer and the isolation structure having an upper portion and a lower portion separated by a transition plane at an acute angle to the major surface of the substrate.

Abstract: A power bank apparatus with speaker combines the function of power bank and the function of speaker. The power bank apparatus not only charges the portable electronic apparatuses but also supplies power to the internal speaker. The voice or music of the portable electronic apparatus is amplified by the speaker of the power bank apparatus to improve the quality of the voice or music.

Abstract: A method for forming a semiconductor structure includes forming a gate stack over a semiconductor substrate in a wafer; forming a recess in the semiconductor substrate and adjacent the gate stack; and performing a selective epitaxial growth to grow a semiconductor material in the recess to form an epitaxy region. The step of performing the selective epitaxial growth includes performing a first growth stage with a first growth-to-etching (E/G) ratio of process gases used in the first growth stage; and performing a second growth stage with a second E/G ratio of process gases used in the second growth stage different from the first E/G ratio.

Abstract: A method for forming a semiconductor structure includes forming a gate stack over a semiconductor substrate; forming a recess in the semiconductor substrate and adjacent the gate stack; and performing a selective epitaxial growth to grow a semiconductor material in the recess to form an epitaxy region. After the step of performing the selective epitaxial growth, a selective etch-back is performed to the epitaxy region. The selective etch-back is performed using process gases comprising a first gas for growing the semiconductor material, and a second gas for etching the epitaxy region.

Abstract: The present disclosure discloses an exemplary method for fabricating a semiconductor device comprises selectively growing a material on a top surface of a substrate; selectively growing a protection layer on the material; and removing a portion of the protection layer in an etching gas.

Abstract: A virtual COM port for Modbus gateway Ethernet I/O includes a host terminal, and an I/O controller connected to the host terminal through a network. The host terminal and the I/O controller comprise a first virtual COM port and a second virtual COM port respectively. When transmitting or receiving commands or data, the first virtual COM port of the host terminal and the second virtual COM port of the I/O controller convert the commands or data between the Modbus/RTU format and the Modbus/TCP format. Therefore, a user just downloads the first virtual COM port and the second virtual COM port or externally connects the first virtual COM port and the second virtual COM port to the host terminal and the I/O controller. Accordingly, the maintenance can be simple and carried out easily.

Abstract: A virtual COM port for remote I/O controller comprises a virtual COM port in a host end. The virtual COM port is connected to a remote I/O controller via a network, wherein the virtual COM port is adopted for receiving and converting commands or data of a COM port interface transmitted from the host end into an acceptable format for the remote I/O controller, and then transmitting to the remote I/O controller for processing. The virtual COM port is also adopted for receiving and converting commands or data transmitted from the remote I/O controller via the network into an acceptable format for the COM port interface, and then transmitting to the host end for processing.

Abstract: An interactive system with movement sensing capability, comprising: an inertial sensing unit disposed on a movable object so as to sense a movement of the movable object and generate a corresponding signal; a control unit connected to the inertial sensing unit so as to transmit the signal; and a multi-media unit receiving the signal so as to display a corresponding first image and a second image interacted with the first image.