Patents by Inventor Yu-Hung Lai

Yu-Hung Lai has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20220149110
    Abstract: A micro LED display includes a display substrate, a first soldering layer, at least one second soldering layer, first micro LEDs and at least one second micro LED. The display substrate includes a substrate having a plurality of pixel areas, a first circuit layer and a second circuit layer, and the first circuit layer and the second circuit layer are arranged in each pixel area. The first soldering layer is disposed on the first circuit layer, and the second soldering layer is disposed on the second micro LED. An arranging area of the first soldering layer is greater than an arranging area of the second soldering layer. The first micro LEDs is bonding to the first circuit layer in each pixel area through the first soldering layer. The second micro LED is bonding to the second circuit layer of one of the pixel areas through the second soldering layer.
    Type: Application
    Filed: December 24, 2020
    Publication date: May 12, 2022
    Applicant: PlayNitride Display Co., Ltd.
    Inventors: Hsiang-Wen Tang, Yu-Hung Lai
  • Patent number: 11326884
    Abstract: A disk resonator is pumped by counterpropagating pump signals to produce corresponding counterpropagating Brillouin laser signals. The pump laser optical frequencies are separated by a frequency offset ??P but excite the same nominal resonator optical mode; the Brillouin laser optical frequencies are separated by a beat frequency ??L with 0<??L<??P. A photodetector receives the Brillouin laser signals and produces an electrical signal at the beat frequency ??L. The frequency offset ??P can be large so enough to prevent locking of the Brillouin laser signals onto a common Brillouin laser frequency. A signal processing system derives from the beat frequency ??L an estimated angular velocity component of the disk optical resonator about an axis substantially perpendicular to the disk optical resonator.
    Type: Grant
    Filed: February 12, 2020
    Date of Patent: May 10, 2022
    Assignee: California Institute of Technology
    Inventors: Kerry Vahala, Jiang Li, Yu-Hung Lai, Myoung-Gyun Suh, Seung Hoon Lee
  • Patent number: 11302547
    Abstract: A carrier structure suitable for transferring or supporting a plurality of micro devices includes a carrier and a plurality of transfer units. The carrier has a carrier surface and a plurality of recesses disposed on the carrier surface. The transfer units are respectively disposed in the recesses and a plurality of transferring surfaces are exposed. Each micro device has a device surface. The transferring surface of each transfer unit is configured to be connected to the device surface of the corresponding micro device. A micro device structure including the carrier structure is also provided.
    Type: Grant
    Filed: September 25, 2019
    Date of Patent: April 12, 2022
    Assignee: PlayNitride Display Co., Ltd.
    Inventors: Pei-Hsin Chen, Yi-Chun Shih, Yi-Ching Chen, Ying-Tsang Liu, Yu-Chu Li, Huan-Pu Chang, Tzu-Yang Lin, Yu-Hung Lai
  • Publication number: 20220068999
    Abstract: A micro-LED display device is provided. The micro-LED display device includes a substrate having a first circuit layer and a second circuit layer. The micro-LED display device also includes a first pad and a second pad respectively disposed on the first circuit layer and the second circuit layer. The micro-LED display device further includes a micro-LED that includes a first electrode and a second electrode. The first electrode and the second electrode are respectively connected to the first pad and the second pad. Moreover, the micro-LED display device includes a first bonding support layer disposed between the first pad and the second pad and in direct contact with the substrate and the micro-LED. The tensile stress of the first bonding support layer is greater than or equal to 18 MPa.
    Type: Application
    Filed: September 23, 2020
    Publication date: March 3, 2022
    Applicant: PlayNitride Display Co., Ltd.
    Inventors: Yu-Hung LAI, Yung-Chi CHU
  • Patent number: 11257860
    Abstract: A micro LED display panel includes a display area, a plurality of micro light-emitting elements and a plurality of micro control elements. The plurality of micro light-emitting elements is disposed in the display area and include a plurality of first color micro LEDs and a plurality of second color micro LEDs. A light wavelength of each of the first color micro LEDs is different from a light wavelength of each of the second color micro LEDs. The plurality of micro control elements is disposed in the display area, and include a plurality of first color micro circuit-chips and a plurality of second color micro circuit-chips. The plurality of first color micro circuit-chips control the plurality of first color micro LEDs, and the plurality of second color micro circuit-chips control the plurality of second color micro LEDs.
    Type: Grant
    Filed: January 7, 2021
    Date of Patent: February 22, 2022
    Assignee: PlayNitride Display Co., Ltd.
    Inventors: Pei-Hsin Chen, Yi-Chun Shih, Yi-Ching Chen, Ying-Tsang Liu, Yu-Chu Li, Tzu-Yang Lin, Yu-Hung Lai
  • Patent number: 11211535
    Abstract: A method for fabricating a micro light-emitting diode display is provided. The method includes disposing a plurality of micro light-emitting diodes on a carrier; transferring the micro light-emitting diodes from the carrier to a display substrate and disposing the micro light-emitting diodes in a plurality of pixels of the display substrate; subjecting the micro light-emitting diodes to a pre-bonding process to electrically connect the micro light-emitting diodes to the display substrate; subjecting the micro light-emitting diodes pre-bonded to the display substrate to a first detection process, thereby identifying whether a faulty micro light-emitting diode is present or not; and, subjecting the micro light-emitting diodes to the main bonding process after the first detection process.
    Type: Grant
    Filed: December 26, 2019
    Date of Patent: December 28, 2021
    Assignee: PLAYNITRIDE DISPLAY CO., LTD.
    Inventors: Yi-Ching Chen, Pei-Hsin Chen, Yi-Chun Shih, Tzu-Yang Lin, Yu-Hung Lai
  • Patent number: 11183622
    Abstract: A micro light-emitting device module includes a circuit substrate, a planarization layer and a micro light-emitting device. The planarization layer is disposed on an upper surface of the circuit substrate and has a first surface and a second surface opposite to each other. The second surface is in contact with the upper surface of the circuit substrate. The micro light-emitting device is disposed on the first surface of the planarization layer. A maximum height difference of the second surface of the planarization layer is greater than a thickness of the micro light-emitting device.
    Type: Grant
    Filed: December 17, 2019
    Date of Patent: November 23, 2021
    Assignee: PlayNitride Display Co., Ltd.
    Inventors: Yun-Li Li, Tzu-Yang Lin, Yu-Hung Lai, Pei-Hsin Chen, Yi-Chun Shih
  • Patent number: 11177154
    Abstract: A carrier structure suitable for transferring or supporting a plurality of micro devices including a carrier and a plurality of transfer units is provided. The transfer units are disposed on the carrier. Each of the transfer units includes a plurality of transfer parts. Each of the transfer parts has a transfer surface. Each of the micro devices has a device surface. The transfer surfaces of the transfer parts of each of the transfer units are connected to the device surface of corresponding micro device. The area of each of the transfer surfaces is smaller than the area of the device surface of the corresponding micro device. A micro device structure using the carrier structure is also provided.
    Type: Grant
    Filed: December 19, 2018
    Date of Patent: November 16, 2021
    Assignee: PixeLED Display CO., LTD.
    Inventors: Pei-Hsin Chen, Yi-Chun Shih, Yi-Ching Chen, Ying-Tsang Liu, Yu-Chu Li, Huan-Pu Chang, Chih-Ling Wu, Yu-Yun Lo, Tzu-Yang Lin, Yu-Hung Lai
  • Publication number: 20210327858
    Abstract: A micro LED display device including a display substrate, a plurality of conductive pad pairs and a plurality of micro light emitting elements is provided. The display substrate has a first arranging area, a splicing area connected to the first arranging area, and a second arranging area connected to the splicing area, wherein the splicing area is located between the first arranging area and the second arranging area. The conductive pad pairs are disposed on the display substrate in an array with the same pitch. The micro light emitting elements are disposed on the display substrate and are electrically bonded to the conductive pad pairs. A manufacturing method of the micro LED display device is also provided.
    Type: Application
    Filed: June 28, 2021
    Publication date: October 21, 2021
    Applicant: PlayNitride Display Co., Ltd.
    Inventors: Sheng-Yuan Sun, Ying-Tsang Liu, Yi-Ching Chen, Pei-Hsin Chen, Yi-Chun Shih, Tzu-Yang Lin, Yu-Hung Lai
  • Publication number: 20210320090
    Abstract: A method for manufacturing a micro light emitting diode device is provided. A plurality of first type epitaxial structures are formed on a first substrate and the first type epitaxial structures are separated from each other. A first connection layer and a first adhesive layer are configured between the first type epitaxial structures and the first substrate. The first connection layer is connected to the first type epitaxial structures. The first adhesive layer is located between the first connection layer and the first type epitaxial substrate. The Young's modulus of the first connection layer is larger than the Young's modulus of the first adhesive layer. The first connection layer located between any two adjacent first type epitaxial structures is removed so as to form a plurality of first connection portions separated from each other. Each of the first connection portions is connected to the corresponding first type epitaxial structure.
    Type: Application
    Filed: June 24, 2021
    Publication date: October 14, 2021
    Applicant: PlayNitride Inc.
    Inventors: Yu-Yun Lo, Tzu-Yang Lin, Yu-Hung Lai
  • Patent number: 11127341
    Abstract: A light emitting module including a circuit carrier and a plurality of light emitting devices is provided. The circuit carrier includes a first circuit layer, a second circuit layer, a dielectric layer and a plurality of conductive vias. The first circuit layer and the second circuit layer are located at two opposite sides of the dielectric layer. The conductive vias pass through the dielectric layer and two opposite end portions of each of the conductive vias are respectively connected to the first circuit layer and the second circuit layer. The light emitting devices are electrically bonded to the first circuit layer. Moreover, the light emitting devices are disposed in a device disposing area of the circuit carrier and the conductive vias are arranged outside the device disposing area. A display device is also provided.
    Type: Grant
    Filed: July 3, 2018
    Date of Patent: September 21, 2021
    Assignee: PlayNitride Inc.
    Inventors: Yun-Li Li, Tzu-Yang Lin, Yu-Hung Lai, Po-Jen Su, Hsuan-Wei Mai
  • Publication number: 20210278215
    Abstract: A disk resonator is pumped by counterpropagating pump signals to produce corresponding counterpropagating Brillouin laser signals. The pump laser optical frequencies are separated by a frequency offset ??P but excite the same nominal resonator optical mode; the Brillouin laser optical frequencies are separated by a beat frequency ??L with 0<??L<??P. A photodetector receives the Brillouin laser signals and produces an electrical signal at the beat frequency ??L. The frequency offset ??P can be large so enough to prevent locking of the Brillouin laser signals onto a common Brillouin laser frequency. A signal processing system derives from the beat frequency ??L an estimated angular velocity component of the disk optical resonator about an axis substantially perpendicular to the disk optical resonator.
    Type: Application
    Filed: February 12, 2020
    Publication date: September 9, 2021
    Inventors: Kerry Vahala, Jiang Li, Yu-Hung Lai, Myoung-Gyun Suh, Seung Hoon Lee
  • Publication number: 20210265524
    Abstract: A micro LED display device includes a display substrate. The display substrate has a first transfer area and a second transfer area adjacent to each other. Both the first transfer area and the second transfer area include a plurality of pixel areas. The pixel area of the first transfer area includes a first micro light-emitting element arranged in a straight line along a first direction. The pixel area of the second transfer area includes a second micro light-emitting element arranged in another straight line along the first direction. In the first direction, the first micro light-emitting element and the second micro light-emitting element are arranged in a staggered manner. A manufacturing method of a micro LED display device is also provided.
    Type: Application
    Filed: December 3, 2020
    Publication date: August 26, 2021
    Applicant: PlayNitride Display Co., Ltd.
    Inventors: Yu-Hung Lai, Yun-Li Li, Tzu-Yang Lin
  • Patent number: 11094677
    Abstract: A micro LED display device including a display substrate, a plurality of conductive pad pairs and a plurality of micro light emitting elements is provided. The display substrate has a first arranging area, a splicing area connected to the first arranging area, and a second arranging area connected to the splicing area, wherein the splicing area is located between the first arranging area and the second arranging area. The conductive pad pairs are disposed on the display substrate in an array with the same pitch. The micro light emitting elements are disposed on the display substrate and are electrically bonded to the conductive pad pairs. A manufacturing method of the micro LED display device is also provided.
    Type: Grant
    Filed: November 8, 2019
    Date of Patent: August 17, 2021
    Assignee: PlayNitride Display Co., Ltd.
    Inventors: Sheng-Yuan Sun, Ying-Tsang Liu, Yi-Ching Chen, Pei-Hsin Chen, Yi-Chun Shih, Tzu-Yang Lin, Yu-Hung Lai
  • Patent number: 11094675
    Abstract: A method for manufacturing a micro light emitting diode device is provided. A plurality of first type epitaxial structures are formed on a first substrate and the first type epitaxial structures are separated from each other. A first connection layer and a first adhesive layer are configured between the first type epitaxial structures and the first substrate. The first connection layer is connected to the first type epitaxial structures. The first adhesive layer is located between the first connection layer and the first type epitaxial substrate. The Young's modulus of the first connection layer is larger than the Young's modulus of the first adhesive layer. The first connection layer located between any two adjacent first type epitaxial structures is removed so as to form a plurality of first connection portions separated from each other. Each of the first connection portions is connected to the corresponding first type epitaxial structure.
    Type: Grant
    Filed: November 6, 2017
    Date of Patent: August 17, 2021
    Assignee: PlayNitride Inc.
    Inventors: Yu-Yun Lo, Tzu-Yang Lin, Yu-Hung Lai
  • Patent number: 11056375
    Abstract: A micro LED carrier board is provided. The micro LED carrier board includes a substrate structure having a first surface and a second surface and having a central region and a peripheral region on the outside of the central region. The micro LED carrier board includes a plurality of micro LED elements forming an array and on the second surface of the substrate structure. The micro LED carrier board includes a patterned structure formed on the first surface and the second surface. The patterned structure has a first pattern density in the central region and a second pattern density in the peripheral region, and the first pattern density is different from the second pattern density.
    Type: Grant
    Filed: December 19, 2019
    Date of Patent: July 6, 2021
    Assignee: PLAYNITRIDE DISPLAY CO., LTD.
    Inventors: Pei-Hsin Chen, Yi-Ching Chen, Yu-Chu Li, Yi-Chun Shih, Ying-Tsang Liu, Yu-Hung Lai, Tzu-Yang Lin
  • Patent number: 11056614
    Abstract: A micro light-emitting diode chip includes an epitaxial structure, a first electrode, and a second electrode. The epitaxial structure includes a first type doped semiconductor layer, a light emitting layer, and a second type doped semiconductor layer, and the epitaxial structure further includes a first surface, a side surface and a second surface opposite to the first surface. The side surface of the epitaxial structure connects to an outer edge of the first surface and an outer edge of the second surface. The first electrode is disposed on the first surface, and is electrically connected to the first type doped semiconductor layer and contacts the first type doped semiconductor layer on a portion of the first surface. The second electrode is disposed on and surrounds the side surface, and electrically connected to the second type doped semiconductor layer, and directly contacts the second type doped semiconductor layer on a portion of the side surface.
    Type: Grant
    Filed: November 7, 2019
    Date of Patent: July 6, 2021
    Assignee: PlayNitride Inc.
    Inventors: Yu-Hung Lai, Yu-Yun Lo, Tzu-Yang Lin
  • Publication number: 20210175387
    Abstract: A method of manufacturing display device is disclosed. a substrate includes a basal layer and metal contacts on the top surface. An insulation layer is disposed on the top surface and includes a first mounting surface and a bottom surface. Multiple grooves are formed on the insulation layer and each extends from the first mounting surface to the bottom surface. The grooves respectively correspond to the metal contacts and expose respective metal contacts. An electromagnetic force is provided with a direction from the basal layer toward the insulation layer. A droplet containing multiple micro components is provided on the first mounting surface. A configuration of an electrode of the micro component corresponds to a configuration of one of the grooves. The electrode is attracted to the corresponding groove by the electromagnetic force so as to electrically contact the metal contact.
    Type: Application
    Filed: February 21, 2021
    Publication date: June 10, 2021
    Applicant: PlayNitride Inc.
    Inventors: Tzu-Yu Ting, Yu-Hung Lai, Hsiang-Wen Tang, Yi-Chun Shih
  • Publication number: 20210175391
    Abstract: A micro semiconductor device and a micro semiconductor display are provided. The micro semiconductor device includes an epitaxial structure, a first electrode, a second electrode and a supporting layer. The epitaxial structure has a bottom surface and a top surface, wherein the bottom surface is defined as a central region and a peripheral region. A first electrode and a second electrode are disposed on the central region of the bottom surface of the epitaxial structure, or the first electrode is disposed on the central region of the bottom surface of the epitaxial structure and the second electrode is disposed on the top surface of the epitaxial structure. The supporting layer is disposed on the peripheral region of the bottom surface of the epitaxial structure.
    Type: Application
    Filed: February 19, 2021
    Publication date: June 10, 2021
    Applicant: PlayNitride Display Co., Ltd.
    Inventors: Ying-Tsang Liu, Pei-Hsin Chen, Yi-Chun Shih, Yi-Ching Chen, Yu-Chu Li, Tzu-Yang Lin, Yu-Hung Lai
  • Patent number: 11031525
    Abstract: A micro light emitting diode chip having a plurality of light-emitting regions, including a semiconductor epitaxial structure, a first electrode and a plurality of second electrodes disposed at interval is provided. The semiconductor epitaxial structure includes a first-type doped semiconductor layer, a plurality of second-type doped semiconductor layers and a plurality of light-emitting layers disposed at interval. The light-emitting layers are located between the first-type doped semiconductor layer and the second-type doped semiconductor layer. The light-emitting layers are located in the light-emitting regions respectively and electrically contact to the first-type doped semiconductor layer. The first electrode is electrically connected and contacts to the first-type doped semiconductor layers. The second electrodes are electrically connected to the second-type doped semiconductor layers. Furthermore, a display panel is also provided.
    Type: Grant
    Filed: July 21, 2020
    Date of Patent: June 8, 2021
    Assignee: PlayNitride Inc.
    Inventors: Yu-Hung Lai, Yu-Yun Lo, Tzu-Yang Lin