Patents by Inventor Yu-Hung Lai

Yu-Hung Lai has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20190189858
    Abstract: A display device including a backplane, a plurality of light-emitting devices, a first distributed Bragg reflector layer and a second distributed Bragg reflector layer is provided. The light-emitting devices are disposed on the backplane. The first distributed Bragg reflector layer is disposed between the backplane and the light-emitting devices. The light-emitting devices are disposed between the first distributed Bragg reflector layer and the second distributed Bragg reflector layer. A projected area of the first distributed Bragg reflector layer on the backplane is larger than a projected area of one of the light-emitting devices on the backplane or a projected area of the second distributed Bragg reflector layer on the backplane is larger than a projected area of one light-emitting device on the backplane.
    Type: Application
    Filed: February 25, 2019
    Publication date: June 20, 2019
    Applicant: PlayNitride Inc.
    Inventors: Yun-Li Li, Yu-Hung Lai, Tzu-Yang Lin
  • Publication number: 20190189496
    Abstract: A carrier structure suitable for transferring or supporting a plurality of micro devices including a carrier and a plurality of transfer units is provided. The transfer units are disposed on the carrier. Each of the transfer units includes a plurality of transfer parts. Each of the transfer parts has a transfer surface. Each of the micro devices has a device surface. The transfer surfaces of the transfer parts of each of the transfer units are connected to the device surface of corresponding micro device. The area of each of the transfer surfaces is smaller than the area of the device surface of the corresponding micro device. A micro device structure using the carrier structure is also provided.
    Type: Application
    Filed: December 19, 2018
    Publication date: June 20, 2019
    Applicant: PixeLED Display CO., LTD.
    Inventors: Pei-Hsin Chen, Yi-Chun Shih, Yi-Ching Chen, Ying-Tsang Liu, Yu-Chu Li, Huan-Pu Chang, Chih-Ling Wu, Yu-Yun Lo, Tzu-Yang Lin, Yu-Hung Lai
  • Patent number: 10325888
    Abstract: A manufacturing method of a display including the following steps is provided. Firstly, a back plate, a first transfer platform and a second transfer platform are provided, wherein a plurality of first light-emitting devices are disposed on the first transfer platform, and a plurality of second light-emitting devices are disposed on the second transfer platform. Secondly, a plurality of first bonding layers are formed at a plurality of first positions of the back plate. Then, the first transfer platform and the back plate are correspondingly docked, so that the first light-emitting devices are bonded on the first positions through the first bonding layers. After that, a plurality of second bonding layers are formed at a plurality of second positions of the back plate. Finally, the second transfer platform and the back plate are correspondingly docked, so that the second light-emitting devices are bonded on the second positions through the second bonding layers.
    Type: Grant
    Filed: November 30, 2017
    Date of Patent: June 18, 2019
    Assignee: PlayNitride Inc.
    Inventors: Yu-Hung Lai, Tzu-Yang Lin, Yu-Yun Lo
  • Patent number: 10326045
    Abstract: A method for manufacturing a micro light emitting diode device is provided. A connection layer and epitaxial structures are formed on a substrate. A first pad is formed on each of the epitaxial structures. A first adhesive layer is formed on the connection layer, and the first adhesive layer encapsulates the epitaxial structures and the first pads. A first substrate is connected to the first adhesive layer. The substrate is removed, and a second substrate is connected to the connection layer through a second adhesive layer. The first substrate and the first adhesive layer are removed. The connection layer located between any two adjacent epitaxial structures are partially removed to form a plurality of connection portions. Each of the connection portions is connected to the corresponding epitaxial structure, and a side edge of each of the connection portions protrudes from a side wall surface of the corresponding epitaxial structure.
    Type: Grant
    Filed: October 17, 2017
    Date of Patent: June 18, 2019
    Assignee: PlayNitride Inc.
    Inventors: Yu-Yun Lo, Tzu-Yang Lin, Yu-Hung Lai
  • Patent number: 10290622
    Abstract: A method for expanding spacings in a light-emitting element array includes the following steps of: providing a light-emitting element array unit including a stretchable supporting film, and a plurality of light-emitting elements disposed on the stretchable supporting film and arranged into a two-dimensional array; stretching the stretchable supporting film along a first direction and a second direction. The first direction and the second direction respectively correspond to a row direction and a column direction of the two-dimensional array.
    Type: Grant
    Filed: April 23, 2018
    Date of Patent: May 14, 2019
    Assignee: PlayNitride Inc.
    Inventors: Yu-Chu Li, Yu-Hung Lai, Tzu-Yang Lin
  • Patent number: 10283684
    Abstract: A light emitting device includes a first substrate, a second substrate and a plurality of micro epitaxial structures. The second substrate is disposed opposite to the first substrate. The micro epitaxial structures are periodically disposed on the substrate and located between the first substrate and the second substrate. A coefficient of thermal expansion of the first substrate is CTE1, a coefficient of thermal expansion of the second substrate is CTE2, a side length of each of the micro epitaxial structures is W, W is in the range between 1 micrometer and 100 micrometers, and a pitch of any two adjacent micro epitaxial structures is P, wherein W/P=0.1 to 0.95, and CTE2/CTE1=0.8 to 1.2.
    Type: Grant
    Filed: November 27, 2017
    Date of Patent: May 7, 2019
    Assignee: PlayNitride Inc.
    Inventors: Tzu-Yang Lin, Yu-Hung Lai, Yu-Yun Lo
  • Publication number: 20190131281
    Abstract: A micro-LED display panel including a substrate, a plurality of micro-LEDs, and a plurality of reinforced structures is provided. The micro-LEDs are disposed at a side of the substrate, wherein each of the micro-LEDs comprises an epitaxial layer and an electrode layer electrically connected to the epitaxial layer, and the electrode layer are located between the epitaxial layers and the substrate. Each of the micro-LEDs is electrically connected to the substrate through the corresponding electrode layer. Each of electrode layers includes a first electrode and a second electrode. The reinforced structures are disposed between the micro-LEDs and the substrate respectively, and each of the reinforced structures is located between the corresponding the first electrode and the second electrode. A Young's modulus of each of reinforced structures is smaller than a Young's modulus of the corresponding electrode layer.
    Type: Application
    Filed: October 9, 2018
    Publication date: May 2, 2019
    Applicant: PixeLED Display CO., LTD.
    Inventors: Ying-Tsang Liu, Yu-Chu Li, Pei-Hsin Chen, Yi-Ching Chen, Tzu-Yang Lin, Yu-Hung Lai
  • Patent number: 10269776
    Abstract: A light emitting device includes a substrate, micro light emitting chips, reflective structures and conductive bumps. The substrate has pads. The micro light emitting chips are disposed on the substrate separately, and each of the micro light emitting chips includes a light emitting layer, a first type electrode and a second type electrode isolated from the first type electrode, wherein the first type electrode and the second type electrode are disposed on one side of the light emitting layer. The reflective structures are physically separated from each other and spaced apart from the substrate. Each of the reflective structures is disposed around one of the micro light emitting chips. The conductive bumps and located between the micro light emitting chips and the substrate, wherein the micro light emitting chips are electrically boned to the pads of the substrate through the conductive bumps.
    Type: Grant
    Filed: April 27, 2017
    Date of Patent: April 23, 2019
    Assignee: PlayNitride Inc.
    Inventors: Yu-Hung Lai, Tzu-Yang Lin
  • Publication number: 20190115390
    Abstract: Disclosed are a method of manufacturing display device, an epitaxial wafer and a display device that includes a display substrate, a first sub pixel unit and a second sub pixel unit. The first sub pixel unit and the second sub pixel unit belong to same color type. The first sub pixel unit and the second sub pixel unit are formed from an epitaxial structure on the epitaxial wafer. The first sub pixel unit and the second sub pixel unit are formed and transferred to the display substrate from the epitaxial wafer. A first light emitting area of the first sub pixel unit and a second light emitting area of the second sub pixel unit are related to at least the photoluminescence measurement result of the epitaxial wafer.
    Type: Application
    Filed: December 21, 2018
    Publication date: April 18, 2019
    Applicant: PLAYNITRIDE INC.
    Inventor: Yu-Hung LAI
  • Publication number: 20190109124
    Abstract: A method of forming a light emitting device is provided. A carrier with a plurality of buffer pads and a plurality of light emitting diode chips is provided, wherein the buffer pads are disposed between the carrier and the light emitting diode chips and are with Young's modulus of 2˜10 GPa. The carrier is positioned over a receiving substrate. A thermal bonding process is performed to electrically connect the light emitting diode chips to the receiving substrate, and wherein the buffer pads and the receiving substrate are located at opposite sides of each light emitting diode chip.
    Type: Application
    Filed: November 26, 2018
    Publication date: April 11, 2019
    Applicant: PlayNitride Inc.
    Inventors: Tzu-Yang Lin, Yu-Hung Lai, Yu-Yun Lo
  • Patent number: 10256372
    Abstract: A display device including a backplane, a plurality of light-emitting devices, a first distributed Bragg reflector layer and a second distributed Bragg reflector layer is provided. The light-emitting devices are disposed on the backplane. The first distributed Bragg reflector layer is disposed between the backplane and the light-emitting devices. The light-emitting devices are disposed between the first distributed Bragg reflector layer and the second distributed Bragg reflector layer. A projected area of the first distributed Bragg reflector layer on the backplane is larger than a projected area of one of the light-emitting devices on the backplane or a projected area of the second distributed Bragg reflector layer on the backplane is larger than a projected area of one light-emitting device on the backplane.
    Type: Grant
    Filed: December 14, 2017
    Date of Patent: April 9, 2019
    Assignee: PlayNitride Inc.
    Inventors: Yun-Li Li, Yu-Hung Lai, Tzu-Yang Lin
  • Publication number: 20190081200
    Abstract: A method of manufacturing micro light-emitting element array is disclosed. A transfer substrate and at least one metal bonding pad are provided, and the metal bonding pad is disposed on the transfer substrate. A growth substrate and a plurality of micro light-emitting elements are provided. The micro light-emitting elements are disposed on the growth substrate, and a surface of each of the micro light-emitting elements away from the growth substrate having at least one electrode. The metal bonding pad is molten at a heating temperature, and the electrode is connected to the metal bonding pad. Then, the growth substrate is removed.
    Type: Application
    Filed: June 5, 2018
    Publication date: March 14, 2019
    Applicant: PLAYNITRIDE INC.
    Inventors: Tzu-Yu TING, Sheng-Chieh LIANG, Yu-Hung LAI
  • Patent number: 10224365
    Abstract: A micro LED including an epitaxial stack layer, a first electrode and a second electrode is provided. A lower surface of the first electrode is in contact with an upper surface of a first semiconductor layer of the epitaxial stack layer. An upper surface of the second electrode is in contact with a lower surface of a second semiconductor layer of the epitaxial stack layer. The lower surface of the first electrode substantially coincides with the upper surface of the first semiconductor layer. The upper surface of the second electrode substantially coincides with the lower surface of the second semiconductor layer. Furthermore, a display panel is also provided.
    Type: Grant
    Filed: May 4, 2017
    Date of Patent: March 5, 2019
    Assignee: PlayNitride Inc.
    Inventors: Chih-Ling Wu, Yu-Hung Lai, Yi-Min Su, Yu-Yun Lo, Tzu-Yang Lin
  • Publication number: 20190051792
    Abstract: A method for manufacturing a micro light emitting diode device is provided. A connection layer and epitaxial structures are formed on a substrate. A first pad is formed on each of the epitaxial structures. A first adhesive layer is formed on the connection layer, and the first adhesive layer encapsulates the epitaxial structures and the first pads. A first substrate is connected to the first adhesive layer. The substrate is removed, and a second substrate is connected to the connection layer through a second adhesive layer. The first substrate and the first adhesive layer are removed. The connection layer located between any two adjacent epitaxial structures are partially removed to form a plurality of connection portions. Each of the connection portions is connected to the corresponding epitaxial structure, and a side edge of each of the connection portions protrudes from a side wall surface of the corresponding epitaxial structure.
    Type: Application
    Filed: October 17, 2017
    Publication date: February 14, 2019
    Applicant: PlayNitride Inc.
    Inventors: Yu-Yun Lo, Tzu-Yang Lin, Yu-Hung Lai
  • Publication number: 20190051637
    Abstract: A method for manufacturing a micro light emitting diode device is provided. A plurality of first type epitaxial structures are formed on a first substrate and the first type epitaxial structures are separated from each other. A first connection layer and a first adhesive layer are configured between the first type epitaxial structures and the first substrate. The first connection layer is connected to the first type epitaxial structures. The first adhesive layer is located between the first connection layer and the first type epitaxial substrate. The Young's modulus of the first connection layer is larger than the Young's modulus of the first adhesive layer. The first connection layer located between any two adjacent first type epitaxial structures is removed so as to form a plurality of first connection portions separated from each other. Each of the first connection portions is connected to the corresponding first type epitaxial structure.
    Type: Application
    Filed: November 6, 2017
    Publication date: February 14, 2019
    Applicant: PlayNitride Inc.
    Inventors: Yu-Yun Lo, Tzu-Yang Lin, Yu-Hung Lai
  • Publication number: 20190013297
    Abstract: A display panel including a substrate, a buffer insulating layer, a plurality of pads, and a plurality of light emitting diodes is provided. The substrate has a display area and a peripheral area adjacent to the display area. The buffer insulating layer is disposed on the substrate. The Young's modulus of the buffer insulating layer is less than 10 GPa. The pads are located on the buffer insulating layer and disposed on the display area of the substrate. The light emitting diodes are electrically connected to the pads and bonding to the display area of the substrate by the pads. The buffer insulating layer is located between the light emitting diodes and the substrate. A normal projection of the light emitting diodes on the substrate is at least partially overlapped with a normal projection of the buffer insulating layer on the substrate.
    Type: Application
    Filed: July 4, 2018
    Publication date: January 10, 2019
    Applicant: PlayNitride Inc.
    Inventors: Yu-Hung Lai, Kuan-Yung Liao, Sheng-Chieh Liang
  • Publication number: 20190012956
    Abstract: A light emitting module including a circuit carrier and a plurality of light emitting devices is provided. The circuit carrier includes a first circuit layer, a second circuit layer, a dielectric layer and a plurality of conductive vias. The first circuit layer and the second circuit layer are located at two opposite sides of the dielectric layer. The conductive vias pass through the dielectric layer and two opposite end portions of each of the conductive vias are respectively connected to the first circuit layer and the second circuit layer. The light emitting devices are electrically bonded to the first circuit layer. Moreover, the light emitting devices are disposed in a device disposing area of the circuit carrier and the conductive vias are arranged outside the device disposing area. A display device is also provided.
    Type: Application
    Filed: July 3, 2018
    Publication date: January 10, 2019
    Applicant: PlayNitride Inc.
    Inventors: Yun-Li Li, Tzu-Yang Lin, Yu-Hung Lai, Po-Jen Su, Hsuan-Wei Mai
  • Publication number: 20190013298
    Abstract: A display panel includes a substrate, a plurality of first light emitting diodes (LEDs), a plurality of second LEDs, a plurality of first common electrodes, and a plurality of second common electrodes. Each pixel unit of the substrate includes a first sub-pixel region and a second sub-pixel region. The first LEDs are disposed on the substrate and located in the first sub-pixel regions, and the second LEDs are disposed on the substrate and located in the second sub-pixel regions. A dominant wavelength of each of the first LEDs is different from that of each of the second LEDs. The first common electrodes are connected to and form an ohmic contact with the first LEDs. The second common electrodes are connected to and form an ohmic contact with the second LEDs. A material of the first common electrodes is different from that of the second common electrodes.
    Type: Application
    Filed: July 9, 2018
    Publication date: January 10, 2019
    Applicant: PlayNitride Inc.
    Inventors: Yu-Hung Lai, Chih-Ling Wu
  • Publication number: 20190006559
    Abstract: A micro light emitting diode including an epitaxial layer, an insulation layer, a first electrode, and a second electrode is provided. The insulation layer is located on a surface of the epitaxial layer and has a first through hole and a second through hole. The first electrode is electrically connected to a first-type semiconductor layer of the epitaxial layer through the first through hole and has a plurality of first-electrode flat portions. The first-electrode flat portions respectively have different horizontal heights relative to the epitaxial layer. The second electrode is electrically connected to a second-type semiconductor layer of the epitaxial layer through the second through hole and has a plurality of second-electrode flat portions. The second-electrode flat portions respectively have different horizontal heights relative to the epitaxial layer. A display panel is also provided.
    Type: Application
    Filed: June 27, 2018
    Publication date: January 3, 2019
    Applicant: PlayNitride Inc.
    Inventors: Yu-Hung Lai, Yu-Yun Lo, Tzu-Yang Lin
  • Patent number: 10170455
    Abstract: A light emitting device includes a carrier, a plurality of light emitting diode chips and a plurality of buffer pads. Each light emitting diode chip includes a first type semiconductor layer, an active layer, a second type semiconductor layer, a via hole and a plurality of bonding pads. The via hole sequentially penetrates through the first type semiconductor layer, the active layer and a portion of the second type semiconductor layer. The first type semiconductor layer, the active layer, the second type semiconductor layer and the via hole define a epitaxial structure. The buffer pads are disposed between the carrier and the second type semiconductor layer, wherein the buffer pads is with Young's modulus of 2˜10 GPa, the second bonding pad is disposed within the via hole to contact the second type semiconductor layer, and the epitaxial structure is electrically bonded to the receiving substrate through the bonding pads.
    Type: Grant
    Filed: July 25, 2017
    Date of Patent: January 1, 2019
    Assignee: PlayNitride Inc.
    Inventors: Tzu-Yang Lin, Yu-Hung Lai, Yu-Yun Lo