Abstract: A light emitting device includes a substrate, a plurality of micro light emitting chips and a plurality of conductive bumps. The substrate has a plurality of pads. The micro light emitting chips are disposed on the substrate in dispersion. Each of the micro light emitting chips includes an N-type semiconductor layer, an active layer and a P-type semiconductor layer. The conductive bumps are disposed corresponding to the micro light emitting chips and located between the micro light emitting chips and the substrate. The micro light emitting chips are electrically connected to the pads of the substrate by the conductive bumps. An orthogonal projection area of each of the conductive bumps on the substrate is greater than an orthogonal projection area of each of the micro light emitting chips on the substrate.

Abstract: A method for transferring light-emitting elements onto a package substrate includes: providing a light-emitting unit including a supporting substrate and a plurality of light-emitting elements, each of the light-emitting elements being removably connected to the supporting substrate and having a surface opposite to the supporting substrate; disposing the light-emitting unit spacingly above a package substrate in such a manner that the surface of each of the light-emitting elements faces the package substrate; and disconnecting the light-emitting elements from the supporting substrate to allow the light-emitting elements to fall onto the package substrate by gravity, so as to connect the light-emitting elements with the package substrate in a non-contact transferring method.

Abstract: A method for expanding spacings in a light-emitting element array includes the following steps of: providing a light-emitting element array unit including a stretchable supporting film, and a plurality of light-emitting elements disposed on the stretchable supporting film and arranged into a two-dimensional array; stretching the stretchable supporting film along a first direction and a second direction. The first direction and the second direction respectively correspond to a row direction and a column direction of the two-dimensional array.

Abstract: A flip chip package structure includes a package base and a LED chip. The package base includes a first substrate, a first and a second electrodes disposed on the first substrate and a bonding layer disposed on the first substrate. The LED chip is flipped on the package base and includes an epitaxy layer, a third and a fourth electrodes disposed on the epitaxy layer and contacting the first and the second electrodes, a second insulating layer disposed between the third and the fourth electrodes, and a plurality of bonding pillars disposed on the second insulating layer and contacting the bonding layer. A minimum interval between the bonding layer, the first and the second electrodes and a minimum interval between the bonding pillars, the second and the third electrodes are larger than a width of each bonding pillar.

Abstract: A flip chip package structure includes a package base and a LED chip. The package base includes a first substrate, a first and a second electrodes disposed on the first substrate and a bonding layer disposed on the first substrate. The LED chip is flipped on the package base and includes an epitaxy layer, a third and a fourth electrodes disposed on the epitaxy layer and contacting the first and the second electrodes, a second insulating layer disposed between the third and the fourth electrodes, and a plurality of bonding pillars disposed on the second insulating layer and contacting the bonding layer. A minimum interval between the bonding layer, the first and the second electrodes and a minimum interval between the bonding pillars, the second and the third electrodes are larger than a width of each bonding pillar.

Abstract: A method of forming light emitting diode dies includes: forming an epitaxial layered structure that defines light emitting units on a front surface of a substrate wafer; forming a photoresist layer over a back surface of the substrate wafer; aligning the substrate wafer and patterning the photoresist layer so as to form openings in the photoresist layer, each of the openings having an area less than a projected area of the respective light emitting unit; forming a solder layer on the photoresist layer such that the solder layer fills the openings in the photoresist layer; removing the photoresist layer and a portion of the solder layer that covers the photoresist layer from the substrate wafer; and dicing the substrate wafer.

Abstract: The present application discloses optical microscopy systems and related method that use modulation techniques and contrast agents to enable the systems to detect nonlinear photoacoustic signals with high spectrum sensitivity and frequency selectivity for imaging. A laser beam is amplitude modulated for pure sinusoidal modulation using either the loss modulation technique or the single light amplitude modulation technique. The sample used in the invention is an endogenous contrast agent by itself or is treated by at least one exogenous contrast agent to produce or enhance photoacoustic effect induced by multi-photon absorption. The modulated laser beam is focused via a focusing device onto a sample which absorbs multiple photons simultaneously and generates ultrasonic (acoustic) waves via nonlinear photoacoutic effect. The ultrasonic waves are received and transformed into electrical signals and the frequency signals within the electrical signals are detected and recorded to create images.

Abstract: A method of forming light emitting diode dies includes: forming an epitaxial layered structure that defines light emitting units on a front surface of a substrate wafer; forming a photoresist layer over a back surface of the substrate wafer; aligning the substrate wafer and patterning the photoresist layer so as to form openings in the photoresist layer, each of the openings having an area less than a projected area of the respective light emitting unit; forming a solder layer on the photoresist layer such that the solder layer fills the openings in the photoresist layer; removing the photoresist layer and a portion of the solder layer that covers the photoresist layer from the substrate wafer; and dicing the substrate wafer.