Abstract: The embodiment of the present invention relates to a latch current limiter (LCL) circuit for spacecraft and a spacecraft power system using the same. The LCL circuit are coupled between a power supply terminal and a power receiving terminal, wherein a semiconductor switch circuit is configured between the power supply terminal and the power receiving terminal. The semiconductor switch circuit includes a conduction mode, a cut-off mode and a resistance mode. Moreover, an LLC DC-to-DC converter is adopted for controlling the semiconductor switch circuit. When the current is greater than the over-current value, the LLC DC-to-DC converter changes its operational frequency to change the output voltage such that the semiconductor switch circuit is controlled to enter the resistance mode. After a preset period, when the current does not return the regular value, the LLC DC-to-DC converter controls the semiconductor switch circuit to enter the cut-off mode such that the power which supplies to the load is turned off.

Abstract: A refrigeration lubricant includes a dipentaerythritol ester which is formed by subjecting a dipentaerythritol and a fatty acid composition to an esterification reaction. The fatty acid composition includes a fatty acid mixture and a C9 branched chain fatty acid. The fatty acid mixture includes at least two straight chain fatty acids selected from the group consisting of a C7 straight chain fatty acid, a C8 straight chain fatty acid, a C9 straight chain fatty acid, and a C10 straight chain fatty acid. A working fluid including a refrigerant and the refrigeration lubricant is also provided.

Abstract: An ammonium fluoride gas may be used to form a protection layer for one or more interlayer dielectric layers, one or more insulating caps, and/or one or more source/drain regions of a semiconductor device during a pre-clean etch process. The protection layer can be formed through an oversupply of nitrogen trifluoride during the pre-clean etch process. The oversupply of nitrogen trifluoride causes an increased formation of ammonium fluoride, which coats the interlayer dielectric layer(s), the insulating cap(s), and/or the source/drain region(s) with a thick protection layer. The protection layer protects the interlayer dielectric layer(s), the insulating cap(s), and/or the source/drain region(s) during the pre-clean process from being etched by fluorine ions formed during the pre-clean process.

Abstract: An ammonium fluoride gas may be used to form a protection layer for one or more interlayer dielectric layers, one or more insulating caps, and/or one or more source/drain regions of a semiconductor device during a pre-clean etch process. The protection layer can be formed through an oversupply of nitrogen trifluoride during the pre-clean etch process. The oversupply of nitrogen trifluoride causes an increased formation of ammonium fluoride, which coats the interlayer dielectric layer(s), the insulating cap(s), and/or the source/drain region(s) with a thick protection layer. The protection layer protects the interlayer dielectric layer(s), the insulating cap(s), and/or the source/drain region(s) during the pre-clean process from being etched by fluorine ions formed during the pre-clean process.

Abstract: A semiconductor device is disclosed. The device includes a source/drain feature formed over a substrate. A dielectric layer formed over the source/drain feature. A contact trench formed through the dielectric layer to expose the source/drain feature. A titanium nitride (TiN) layer deposited in the contact trench and a cobalt layer deposited over the TiN layer in the contact trench.

Abstract: An ammonium fluoride gas may be used to form a protection layer for one or more interlayer dielectric layers, one or more insulating caps, and/or one or more source/drain regions of a semiconductor device during a pre-clean etch process. The protection layer can be formed through an oversupply of nitrogen trifluoride during the pre-clean etch process. The oversupply of nitrogen trifluoride causes an increased formation of ammonium fluoride, which coats the interlayer dielectric layer(s), the insulating cap(s), and/or the source/drain region(s) with a thick protection layer. The protection layer protects the interlayer dielectric layer(s), the insulating cap(s), and/or the source/drain region(s) during the pre-clean process from being etched by fluorine ions formed during the pre-clean process.

Abstract: An ammonium fluoride gas may be used to form a protection layer for one or more interlayer dielectric layers, one or more insulating caps, and/or one or more source/drain regions of a semiconductor device during a pre-clean etch process. The protection layer can be formed through an oversupply of nitrogen trifluoride during the pre-clean etch process. The oversupply of nitrogen trifluoride causes an increased formation of ammonium fluoride, which coats the interlayer dielectric layer(s), the insulating cap(s), and/or the source/drain region(s) with a thick protection layer. The protection layer protects the interlayer dielectric layer(s), the insulating cap(s), and/or the source/drain region(s) during the pre-clean process from being etched by fluorine ions formed during the pre-clean process.

Abstract: The embodiment of the present invention relates to a latch current limiter (LCL) circuit for spacecraft and a spacecraft power system using the same. The LCL circuit are coupled between a power supply terminal and a power receiving terminal, wherein a semiconductor switch circuit is configured between the power supply terminal and the power receiving terminal. The semiconductor switch circuit includes a conduction mode, a cut-off mode and a resistance mode. Moreover, an LLC DC-to-DC converter is adopted for controlling the semiconductor switch circuit. When the current is greater than the over-current value, the LLC DC-to-DC converter changes its operational frequency to change the output voltage such that the semiconductor switch circuit is controlled to enter the resistance mode. After a preset period, when the current does not return the regular value, the LLC DC-to-DC converter controls the semiconductor switch circuit to enter the cut-off mode such that the power which supplies to the load is turned off.

Abstract: A semiconductor device is disclosed. The device includes a source/drain feature formed over a substrate. A dielectric layer formed over the source/drain feature. A contact trench formed through the dielectric layer to expose the source/drain feature. A titanium nitride (TiN) layer deposited in the contact trench and a cobalt layer deposited over the TiN layer in the contact trench.

Abstract: An electronic device includes a fuel cell, a first switch, a rechargeable battery, a second switch, and a relay. The fuel cell provides a fuel voltage. The first switch provides the fuel voltage to a first node according to a first control signal. The rechargeable battery provides a battery voltage. The second switch is coupled to the first node and charges the rechargeable battery with the fuel voltage according to a second control signal. The relay provides a voltage of the first node to the load according to the third control signal.

Abstract: A switch mode power supply circuit with high voltage output, an electrostatic spray apparatus and agricultural plant protection apparatus using the same are provided. The switch mode power supply circuit is electrically connected in series with at least a pre-stage power converter and a post-stage power converter. In order to simplify the control, the switch of the pre-stage power converter is omitted, only one switch of the post-stage power converter is adopted to perform synchronous control. Since the multiple sets of power conversion circuits in the previous stage are connected in series, the turn ratio of the transformer in the power converter in the subsequent stage can be reduced. Therefore, the transformer can be miniaturized and the power supply circuit would be more suitable for agricultural plant protection machine and electrostatic spray apparatus.

Abstract: Generally, examples are provided relating to conductive features that include a barrier layer, and to methods thereof. In an embodiment, a metal layer is deposited in an opening through a dielectric layer(s) to a source/drain region. The metal layer is along the source/drain region and along a sidewall of the dielectric layer(s) that at least partially defines the opening. The metal layer is nitrided, which includes performing a multiple plasma process that includes at least one directional-dependent plasma process. A portion of the metal layer remains un-nitrided by the multiple plasma process. A silicide region is formed, which includes reacting the un-nitrided portion of the metal layer with a portion of the source/drain region. A conductive material is disposed in the opening on the nitrided portions of the metal layer.

Abstract: Generally, examples are provided relating to conductive features that include a barrier layer, and to methods thereof. In an embodiment, a metal layer is deposited in an opening through a dielectric layer(s) to a source/drain region. The metal layer is along the source/drain region and along a sidewall of the dielectric layer(s) that at least partially defines the opening. The metal layer is nitrided, which includes performing a multiple plasma process that includes at least one directional-dependent plasma process. A portion of the metal layer remains un-nitrided by the multiple plasma process. A silicide region is formed, which includes reacting the un-nitrided portion of the metal layer with a portion of the source/drain region. A conductive material is disposed in the opening on the nitrided portions of the metal layer.

Abstract: An antibody, or an antigen-binding fragment thereof, that binds specifically to human CSF-1R includes a heavy chain variable domain that contains a HCDR1 region having the sequence of SEQ ID NO: 4, a HCDR2 region having the sequence of SEQ ID NO: 5, and a HCDR3 region having the sequence of SEQ ID NO: 6; and a light chain variable domain that contains a LCDR1 region having the sequence of SEQ ID NO: 7, a LCDR2 region having the sequence of SEQ ID NO: 8, and a LCDR3 region having the sequence of SEQ ID NO: 9. The heavy chain variable domain comprises the sequence of SEQ ID NO: 2, and wherein the light chain variable domain comprises the sequence of SEQ ID NO: 3.

Abstract: Disclosed herein is a scalp protection composition that includes a carboxylate compound, an emulsifier, and water. The carboxylate compound is represented by formula (I): In formula (I), R1 represents a C4-C8 alkyl group, and R2 represents a C10-C26 alkyl group.

Abstract: An ammonium fluoride gas may be used to form a protection layer for one or more interlayer dielectric layers, one or more insulating caps, and/or one or more source/drain regions of a semiconductor device during a pre-clean etch process. The protection layer can be formed through an oversupply of nitrogen trifluoride during the pre-clean etch process. The oversupply of nitrogen trifluoride causes an increased formation of ammonium fluoride, which coats the interlayer dielectric layer(s), the insulating cap(s), and/or the source/drain region(s) with a thick protection layer. The protection layer protects the interlayer dielectric layer(s), the insulating cap(s), and/or the source/drain region(s) during the pre-clean process from being etched by fluorine ions formed during the pre-clean process.

Abstract: An ammonium fluoride gas may be used to form a protection layer for one or more interlayer dielectric layers, one or more insulating caps, and/or one or more source/drain regions of a semiconductor device during a pre-clean etch process. The protection layer can be formed through an oversupply of nitrogen trifluoride during the pre-clean etch process. The oversupply of nitrogen trifluoride causes an increased formation of ammonium fluoride, which coats the interlayer dielectric layer(s), the insulating cap(s), and/or the source/drain region(s) with a thick protection layer. The protection layer protects the interlayer dielectric layer(s), the insulating cap(s), and/or the source/drain region(s) during the pre-clean process from being etched by fluorine ions formed during the pre-clean process.

Abstract: A method of manufacturing a semiconductor device is as below. An exposed photoresist layer is developed using a developer supplied by a developer supplying unit. An ammonia gas by-product of the developer is discharged through a gas outlet of the developer supplying unit into a treating tool. The ammonia gas by-product is retained in the treating tool. A concentration of the ammonia gas by-product is monitored.

Abstract: An electronic device includes a fuel cell providing a fuel voltage, a first switch, a rechargeable battery providing a battery voltage, a second switch, a relay, a driving circuit, and a controller. The first switch provides the fuel voltage to a first node according to a first control signal. The second switch is coupled to the first node, and charges the rechargeable battery with the fuel voltage according to a second control signal. The relay provides a voltage of the first node to the load according to the third control signal. The driving circuit generates the first control signal, the second control signal, and the third control signal according to a driving signal. The controller generates the driving signal according to the fuel voltage and the battery voltage.

Abstract: An electronic device includes a fuel cell, a first switch, a rechargeable battery, a second switch, and a relay. The fuel cell provides a fuel voltage. The first switch provides the fuel voltage to a first node according to a first control signal. The rechargeable battery provides a battery voltage. The second switch is coupled to the first node and charges the rechargeable battery with the fuel voltage according to a second control signal. The relay provides a voltage of the first node to the load according to the third control signal.