Abstract: A semiconductor device is disclosed. The device includes a source/drain feature formed over a substrate. A dielectric layer formed over the source/drain feature. A contact trench formed through the dielectric layer to expose the source/drain feature. A titanium nitride (TiN) layer deposited in the contact trench and a cobalt layer deposited over the TiN layer in the contact trench.

Abstract: An ammonium fluoride gas may be used to form a protection layer for one or more interlayer dielectric layers, one or more insulating caps, and/or one or more source/drain regions of a semiconductor device during a pre-clean etch process. The protection layer can be formed through an oversupply of nitrogen trifluoride during the pre-clean etch process. The oversupply of nitrogen trifluoride causes an increased formation of ammonium fluoride, which coats the interlayer dielectric layer(s), the insulating cap(s), and/or the source/drain region(s) with a thick protection layer. The protection layer protects the interlayer dielectric layer(s), the insulating cap(s), and/or the source/drain region(s) during the pre-clean process from being etched by fluorine ions formed during the pre-clean process.

Abstract: A system for detecting leakage of a liquid supply pipe includes a pipe casing for enclosing an end portion of the liquid supply pipe adjoined to a nozzle and a sensor system configured to detect presence of a liquid leaked from the liquid supply pipe at the end portion. The sensor system is in alignment with the end portion of the liquid supply pipe.

Abstract: An apparatus capable of local polishing and suitable for performing a plasma-electrolytic polishing process on an object is provided. The apparatus capable of local polishing includes a fixing seat, a motion mechanism, and a jet module connected to the motion mechanism and including an electrolyte communication port, a gas communication port, a power connection area, and a jet flow outlet. The jet flow outlet faces the fixing seat and is communicated with the electrolyte communication port and the gas communication port to be suitable for performing the plasma-electrolytic polishing process on the object fixed on the fixing seat. A plasma-electrolytic polishing system including an apparatus capable of local polishing is also provided.

Abstract: A photoresist baking apparatus is provided. The photoresist baking apparatus includes a baking chamber having an exhaust port on a sidewall of the baking chamber, a hot plate disposed in the baking chamber, an exhaust line coupled to the exhaust port, and a cover plate disposed over the hot plate and between the hot plate and the exhaust port. The exhaust line is configured to exhaust out an atmosphere inside the baking chamber in an exhaust direction. The cover plate has a plurality of exhaust holes to allow air to flow through. The exhaust holes include a first exhaust hole and a second exhaust hole arranged in a first direction that is perpendicular to the exhaust direction.

Abstract: A method of manufacturing a semiconductor device and a semiconductor processing system are provided. The method includes the following steps. A photoresist layer is formed on a substrate in a lithography tool. The photoresist layer is exposed in the lithography tool to form an exposed photoresist layer. The exposed photoresist layer is developed to form a patterned photoresist layer in the lithography tool by using a developer. An ammonia gas by-product of the developer is removed from the lithography tool.

Abstract: Generally, examples are provided relating to conductive features that include a barrier layer, and to methods thereof. In an embodiment, a metal layer is deposited in an opening through a dielectric layer(s) to a source/drain region. The metal layer is along the source/drain region and along a sidewall of the dielectric layer(s) that at least partially defines the opening. The metal layer is nitrided, which includes performing a multiple plasma process that includes at least one directional-dependent plasma process. A portion of the metal layer remains un-nitrided by the multiple plasma process. A silicide region is formed, which includes reacting the un-nitrided portion of the metal layer with a portion of the source/drain region. A conductive material is disposed in the opening on the nitrided portions of the metal layer.

Abstract: A photoresist baking apparatus is provided. The photoresist baking apparatus includes a baking chamber, a hot plate, an exhaust line, and a cover plate. The baking chamber has an exhaust port on a sidewall thereof. The hot plate is disposed in the baking chamber and is configured to support a wafer and heat a photoresist material over the wafer. The exhaust line is coupled to the exhaust port and is configured to exhaust out the atmosphere inside the baking chamber. The cover plate is disposed over the hot plate and between the hot plate and the exhaust port. The cover plate has multiple exhaust holes to allow air to flow through. The size of one of the exhaust holes farther from the exhaust port is larger than the size of one of the exhaust holes closer to the exhaust port.

Abstract: A method of manufacturing a semiconductor device and a semiconductor processing system are provided. The method includes the following steps. A photoresist layer is formed on a substrate in a lithography tool. The photoresist layer is exposed in the lithography tool to form an exposed photoresist layer. The exposed photoresist layer is developed to form a patterned photoresist layer in the lithography tool by using a developer. An ammonia gas by-product of the developer is removed from the lithography tool.

Abstract: Generally, examples are provided relating to conductive features that include a barrier layer, and to methods thereof. In an embodiment, a metal layer is deposited in an opening through a dielectric layer(s) to a source/drain region. The metal layer is along the source/drain region and along a sidewall of the dielectric layer(s) that at least partially defines the opening. The metal layer is nitrided, which includes performing a multiple plasma process that includes at least one directional-dependent plasma process. A portion of the metal layer remains un-nitrided by the multiple plasma process. A silicide region is formed, which includes reacting the un-nitrided portion of the metal layer with a portion of the source/drain region. A conductive material is disposed in the opening on the nitrided portions of the metal layer.

Abstract: Embodiments of the present disclosure describe a chemical replacement system and a method to automatically replace PR bottles. The chemical replacement system includes a computer system and a transfer module. The computer system can receive a request signal to replace one or more chemical containers and transmit a command to the transfer module. The transfer module, being controlled by the computer system, can include a holder configured to hold the one or more chemical containers (e.g., PR bottles); a door unit configured to open in response to the command; and a transfer unit configured to eject the holder in response to the command for replacement. The chemical replacement system can further include an automated vehicle configured to replace the one or more chemical containers in the ejected holder.

Abstract: The present disclosure describes a method for replacing a photoresist (PR) bottle using a vehicle. An exemplary vehicle includes a processor configured to receive a request signal to replace a first PR bottle. The processor is also configured to transmit an order based on the request signal. The vehicle also includes a plurality of wheels configured to move the vehicle from the first location to a second location, and from the second location to the first location. The vehicle further includes a robotic arm configured to load, at the first location, the first PR bottle into a first container; load a second PR bottle in a second container; remove a cap from the second PR bottle and a socket from the first PR bottle; couple the socket of the first PR bottle to the second PR bottle; and unload the second PR bottle from the second container.

Abstract: The present disclosure describes a container for placing an object therein. The container includes a container body and a lid over the container body, a collision-preventing portion attached to one or more of the container body and the lid and configured to buffer an impact force, a pairing recognition mechanism configured to detect an object placed in the container body, and a liquid-detecting sensor configured to detect a leakage from the object.

Abstract: The present disclosure describes a method for replacing a photoresist (PR) bottle using a vehicle. An exemplary vehicle includes a processor configured to receive a request signal to replace a first PR bottle. The processor is also configured to transmit an order based on the request signal. The vehicle also includes a plurality of wheels configured to move the vehicle from the first location to a second location, and from the second location to the first location. The vehicle further includes a robotic arm configured to load, at the first location, the first PR bottle into a first container; load a second PR bottle in a second container; remove a cap from the second PR bottle and a socket from the first PR bottle; couple the socket of the first PR bottle to the second PR bottle; and unload the second PR bottle from the second container.

Abstract: A headlight device and a bending headlight module thereof are provided. The headlight device includes a main headlight module and a bending headlight module. The main headlight module is capable of generating a first lighting area which is a light pattern that complies with the regulations of low beam headlamps. The main headlight module includes a main optical axis, and the main headlight module defines a horizontal plane and a vertical plane perpendicular to the horizontal plane, and the main optical axis is parallel to the horizontal plane and the vertical plane. The bending headlight module is disposed close to the main headlight module, and the bending headlight module includes a first reflecting unit, a first lighting unit, a first cut-off plate unit, and a first lens unit.

Abstract: A headlight device is provided. The headlight device includes a main headlight module and a high-speed headlight module. The main headlight module is capable of generating a first lighting area having a light pattern that complies with the regulations of low beam headlamps. In addition, the main headlight module includes a main optical axis, and the main headlight module defines a horizontal plane and a vertical plane perpendicular to the horizontal plane, and the main optical axis is parallel to the horizontal plane and the vertical plane.

Abstract: A headlight device and a bending headlight module thereof are provided. The headlight device includes a main headlight module and a bending headlight module. The main headlight module is capable of generating a first lighting area which is a light pattern that complies with the regulations of low beam headlamps. The main headlight module includes a main optical axis, and the main headlight module defines a horizontal plane and a vertical plane perpendicular to the horizontal plane, and the main optical axis is parallel to the horizontal plane and the vertical plane. The bending headlight module is disposed close to the main headlight module, and the bending headlight module includes a first reflecting unit, a first lighting unit, a first cut-off plate unit, and a first lens unit.

Abstract: A headlight device is provided. The headlight device includes a main headlight module and a high-speed headlight module. The main headlight module is capable of generating a first lighting area having a light pattern that complies with the regulations of low beam headlamps. In addition, the main headlight module includes a main optical axis, and the main headlight module defines a horizontal plane and a vertical plane perpendicular to the horizontal plane, and the main optical axis is parallel to the horizontal plane and the vertical plane.

Abstract: Embodiments of the present disclosure describe a chemical replacement system and a method to automatically replace PR bottles. The chemical replacement system includes a computer system and a transfer module. The computer system can receive a request signal to replace one or more chemical containers and transmit a command to the transfer module. The transfer module, being controlled by the computer system, can include a holder configured to hold the one or more chemical containers (e.g., PR bottles); a door unit configured to open in response to the command; and a transfer unit configured to eject the holder in response to the command for replacement. The chemical replacement system can further include an automated vehicle configured to replace the one or more chemical containers in the ejected holder.

Abstract: A system for dispensing a liquid includes a filter adapted to filter a liquid and to provide a filtered liquid at a liquid outlet of the filter, and a tank having a liquid inlet coupled to the liquid outlet of the filter via a first pipe. The tank includes an upper portion having a first lateral dimension and a lower portion having a second lateral dimension less than the first lateral dimension. The upper portion of the tank is above the liquid inlet of the tank.