Abstract: Embodiments described herein generally relate to semiconductor device fabrication. More specifically, embodiments of the present disclosure relate to methods of removing metal oxides during semiconductor device manufacturing. The method includes performing a first soak process on the semiconductor device structure, forming a metal fill material in at least one feature, and performing a second soak process on the semiconductor device structure. The semiconductor device structure includes at least one feature formed in a dielectric layer of the semiconductor device structure. The first soak process includes flowing a first precursor gas over the at least one feature. The metal fill material is formed by partially filling the at least one feature where a gap region forms between a sidewall of the at least one feature and the metal fill material. The second soak process includes flowing a second precursor gas over the at least one feature and the metal fill material.

Abstract: A method and apparatus for tungsten gap-fill in semiconductor devices are provided. The method includes performing a gradient oxidation process to oxidize exposed portions of a liner layer, wherein the gradient oxidation process preferentially oxidizes an overhang portion of the liner layer, which obstructs or blocks top openings of one or more features formed within a field region of a substrate. The method further includes performing an etchback process to remove or reduce the oxidized overhang portion of the liner layer, exposing the liner layer to a chemical vapor transport (CVT) process to remove metal oxide remaining from the gradient oxidation process and the etchback process, and performing a tungsten gap-fill process to fill or partially fill the one or more features.

Abstract: Embodiments of the disclosure include a method of depositing a gap-fill material on a semiconductor substrate, comprising: forming a passivation layer on a surface of a contact structure by introducing a hydrogen gas and an oxygen gas and/or water from a remote plasma source to a processing chamber, and depositing a metal gap-fill material over a portion of the passivation layer to fill the feature formed in the surface of the semiconductor substrate. The contact structure includes a feature formed in a surface of the semiconductor substrate. The feature comprises an opening that is defined by a substrate, a lower dielectric material disposed over the substrate, and an upper dielectric material disposed over the lower dielectric material, and the passivation layer is formed over the substrate, the lower dielectric material, and the upper dielectric material.

Abstract: Embodiments described herein generally relate to methods for forming low resistivity contacts for semiconductor device formation. More particularly, embodiments provide methods for selective etching of materials used to form a portion of an electrical contact formed on semiconductor substrates. In some embodiments, a method includes providing a substrate including a gate material and an insulating material disposed at least partially around the gate material, the insulating material including a high-k dielectric. The substrate is exposed to a plasma including a gas that includes one or more of H2, Ar, Xe, Ne, and Kr. The method further includes etching the high-k dielectric by providing a chlorine-containing precursor while heating the substrate to a temperature of about 450° C. or less.

Abstract: The invention belongs to the field of vibration power generation. The vibration harvesting component for vibration power generator comprises a rectangular-shaped frame, a pillar. It expands the frequency band and harvests low vibration energy. It involves a vibration harvesting device used in electromagnetic vibration power generator and a vibration harvesting device used in composite vibration power generator, both of which comprises a vibration harvesting component and a gimbal. Both devices make the vibration harvesting components to capture omnidirectional external excitation, the latter also generates multiple types of feedback actions for various power generation units to utilize. It involves an electromagnetic vibration power generator and a composite vibration power generator. The former comprises a vibration harvesting device used in electromagnetic vibration power generator, the latter comprises a vibration harvesting device used in composite vibration power generator.

Abstract: Methods of manufacturing and processing semiconductor devices (i.e., electronic devices) are described. Embodiments of the disclosure advantageously provide methods to reduce the resistance of the work function layer of an electronic device, as well as using a low resistivity metal for filling the gate.

Abstract: The present disclosure relates to techniques for detection of biomolecules, and in particular to immunosensors related to gold nanoparticles.

Abstract: The present invention provides methods, compositions, systems, and kits comprising nano-satellite complexes and/or serum albumin carrier complexes, which are used for modulating antigen-specific immune response (e.g., enhancing anti-tumor immunity). In certain embodiments, the nano-satellite complexes comprise: a) a core nanoparticle complex comprising a biocompatible coating surrounding a nanoparticle core; b) at least one satellite particle attached to, or absorbed to, the biocompatible coating; and c) an antigenic component conjugated to, or absorbed to, the at least one satellite particle component. In certain embodiments, the complexes further comprise: d) a type I interferon agonist agent. In some embodiments, the serum albumin complexes comprise: a) at least part of a serum albumin protein, b) an antigenic component conjugated to the carrier protein, and c) a type I interferon agonist agent.

Abstract: A heat spreader includes a first plate, a second plate and a plurality of protrusions. The first plate is configured to fit against at least one side surface of a cell. The second plate is hermetically connected to the first plate to form an enclosed space filled with a liquid medium. The protrusions are disposed between the first plate and the second plate and dispersedly arranged in the enclosed space. Some of the protrusions are arranged at intervals in a first direction to form a protrusion group, and two parts of the protrusions respectively belonging to two adjacent protrusion groups are at least partially staggered in a second direction different from the first direction.

Abstract: Embodiments relate to the field of hexagonal boron nitride (hBN). In particular, to an alkali metal (A) intercalated hBN material. The A-intercalated hBN is chemically active, electrically conducting, and superconducting. The A-intercalated hBN is spontaneously soluble in aprotic organic solvents to form dispersions of exfoliated reduced 2-dimensional hBN sheets in organic solvents. The dispersions of exfoliated reduced 2-dimensional hBN materials in organic solvents materials can be reacted with metal salts to form 2-dimensional hBN-supported metal and/or metal oxide nanoparticle composites. The solutions/dispersions of exfoliated reduced 2-dimensional hBN materials in organic solvents can be transferred to water or organic solvents to form stable aqueous and organic suspensions of 2-dimensional hBN.

Abstract: Precursor delivery systems that can achieve increased dose profile control compared to current precursor delivery systems are described. Processing methods that include using the precursor delivery system to deposit a film are also described. The precursor delivery system comprises a first precursor outlet line and a second precursor outlet line, each of the first precursor outlet line and the second precursor outlet line configured to allow the precursor to be delivered from a pressure-controlled precursor reservoir to a processing chamber, wherein the first precursor outlet line is configured to deliver the precursor at a first flow rate and the second precursor outlet line is configured to deliver the precursor at a second flow rate.

Abstract: Embodiments relate to the field of hexagonal boron nitride (hBN). In particular, to an alkali metal (A) intercalated hBN material. The A-intercalated hBN is chemically active, electrically conducting, and superconducting. The A-intercalated hBN is spontaneously soluble in aprotic organic solvents to form dispersions of exfoliated reduced 2-dimensional hBN sheets in organic solvents. The dispersions of exfoliated reduced 2-dimensional hBN materials in organic solvents materials can be reacted with metal salts to form 2-dimensional hBN-supported metal and/or metal oxide nanoparticle composites. The solutions/dispersions of exfoliated reduced 2-dimensional hBN materials in organic solvents can be transferred to water or organic solvents to form stable aqueous and organic suspensions of 2-dimensional hBN.

Abstract: A method and apparatus for a gap-fill in semiconductor devices are provided. The method includes forming a metal seed layer on an exposed surface of the substrate, wherein the substrate has features in the form of trenches or vias formed in a top surface of the substrate, the features having sidewalls and a bottom surface extending between the sidewalls. A gradient oxidation process is performed in a first process chamber to oxidize exposed portions of the metal seed layer to form a metal oxide, wherein the gradient oxidation process preferentially oxidizes a field region of the substrate over the bottom surface of the features. An etch back process is performed in the first process chamber removes or reduces the oxidized portion of the seed layer. A metal gap-fill process fills or partially fills the features with a gap fill material.

Abstract: A method includes forming a metal fill material on at least one electrical connection formed in a feature formed within a dielectric layer of a semiconductor device structure. The metal fill material partially fills the feature, the partially filled feature comprises the metal fill material and an exposed first portion of a sidewall of the feature that comprises the material of the dielectric layer, and a gap region formed between a second portion of the sidewall and a sidewall of the metal fill material, and performing a soaking process on the semiconductor device structure to form a passivation layer over a surface of the metal fill material and including a portion of the metal fill material disposed within the gap.