Patents by Inventor Yu Lei

Yu Lei has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20190157145
    Abstract: Interconnects and methods for forming interconnects are described and disclosed herein. The interconnect contains a stack formed on a substrate having a via and a trench formed therein, a first metal formed from a first material of a first type deposited in the via, and a second metal formed from a second material of a second type deposited in the trench.
    Type: Application
    Filed: January 18, 2019
    Publication date: May 23, 2019
    Inventors: He REN, Feiyue MA, Yu LEI, Kai WU, Mehul B. NAIK, Zhiyuan WU, Vikash BANTHIA, Hua AI
  • Publication number: 20190141963
    Abstract: A floating offshore wind turbine integrated with a steel fish farming cage mainly includes a wind turbine, a wind turbine tower, a living quarter, a floating wind turbine foundation in a conic steel structure, a mooring system, a lateral net encircling the floating wind turbine foundation, a bottom net, and lifting systems. The upper end of the wind turbine tower hosts a wind turbine, and the lower end of the wind turbine tower is fixed on the floating wind turbine foundation. In the present invention, the inner space of the floating wind turbine foundation is used to form a huge farming cage, which functions for the objectives of “power exploitation on the top and fish farming at the bottom”. The foundation has excellent stability and seakeeping performance, and is applicable to deep waters.
    Type: Application
    Filed: November 6, 2018
    Publication date: May 16, 2019
    Inventors: Xiangyuan ZHENG, Yu LEI, Wei LI, Shengxiao ZHAO, Daoyi CHEN, Yi LI
  • Publication number: 20190134855
    Abstract: A device for preparation of a composite for on-site pipeline reinforcement includes: a temperature control stirring unit, an infiltration unit, and a vacuum unit, which are communicated in sequence, the infiltration unit includes a spindle, reinforced fiber cloth, a flow-guiding net, and a vacuum bag film sleeved outside the spindle, the reinforced fiber cloth and the flow-guiding net, the spindle is stopped by two baffles, an adhesive feeding joint and an adhesive discharging joint are disposed at two ends of the spindle, respectively, each of the adhesive feeding joint and the adhesive discharging joint includes an inner joint and an outer joint, an outer wall of the inner joint and an outer side of the baffle are covered by a flow-leading net, and the flow-guiding net covered on the outer side of the baffle extends from an edge of the baffle into the adhesive storing compartment of the baffle.
    Type: Application
    Filed: August 18, 2016
    Publication date: May 9, 2019
    Inventors: Yong ZHANG, Yu ZHANG, Jianfeng LU, Jian LEI, Qiang PENG
  • Publication number: 20190128287
    Abstract: A frame structure includes a frame body and at least one vibration absorbing structure. The vibration absorbing structure has a support column and at least one cantilever. The cantilever has a cantilever body, a first end portion and a second end portion. One end of the support column is connected to a wall surface of the frame body. The first end portion of the cantilever is connected to the support column. The cantilever body and the second end portion extend outwardly and swing freely on the wall surface of the frame body. When the cantilever body and the second end portion are swinging, they are not in contact with any peripheral member and the frame structure.
    Type: Application
    Filed: September 14, 2018
    Publication date: May 2, 2019
    Inventors: Kun-Hung CHEN, Pao-Hung TUNG, Tsung-Yu LEI
  • Patent number: 10269633
    Abstract: Methods for depositing a contact metal layer in contact structures of a semiconductor device are provided. In one embodiment, a method for depositing a contact metal layer for forming a contact structure in a semiconductor device is provided. The method comprises performing a cyclic metal deposition process to deposit a contact metal layer on a substrate and annealing the contact metal layer disposed on the substrate. The cyclic metal deposition process comprises exposing the substrate to a deposition precursor gas mixture to deposit a portion of the contact metal layer on the substrate, exposing the portion of the contact metal layer to a plasma treatment process, and repeating the exposing the substrate to a deposition precursor gas mixture and exposing the portion of the contact metal layer to a plasma treatment process until a predetermined thickness of the contact metal layer is achieved.
    Type: Grant
    Filed: November 13, 2017
    Date of Patent: April 23, 2019
    Assignee: APPLIED MATERIALS, INC.
    Inventors: Bhushan N. Zope, Avgerinos V. Gelatos, Bo Zheng, Yu Lei, Xinyu Fu, Srinivas Gandikota, Sang-Ho Yu, Mathew Abraham
  • Patent number: 10256144
    Abstract: Embodiments of the present disclosure generally relate an interconnect formed on a substrate and a method of forming the interconnect thereon. In an embodiment, a via and trench in a stack formed on the substrate. A bottom of the via is pre-treated using a first pre-treatment procedure. A sidewall of the via is pre-treated using a second pre-treatment procedure. A first metal fill material of a first type is deposited on the stack, in the via. A second metal fill material of a second type is deposited on the stack, in the trench.
    Type: Grant
    Filed: April 26, 2017
    Date of Patent: April 9, 2019
    Assignee: Applied Materials, Inc.
    Inventors: He Ren, Feiyue Ma, Yu Lei, Kai Wu, Mehul B. Naik, Zhiyuan Wu, Vikash Banthia, Hua Al
  • Patent number: 10242211
    Abstract: The invention discloses a method and a device for information security management, and a storage medium, in the field of information security technologies. The method comprises: detecting an information input operation of a terminal; obtaining key information corresponding to a triggering operation of a first key, when the triggering operation of the first key is detected; determining whether the obtained key information matches preset key information, and if so, outputting information related to private information stored in a private information database, which corresponds to the preset key information, wherein, the preset key information includes an access password for the private information database and second key information. In the invention, a user needs not access a private space to check private information; instead, the user only needs to input the preset key information to query the information related to the private information. Therefore, the security of the private information is improved.
    Type: Grant
    Filed: July 10, 2014
    Date of Patent: March 26, 2019
    Assignee: TENCENT TECHNOLOGY (SHENZHEN) COMPANY LIMITED
    Inventors: Yu Lei, Jing He
  • Patent number: 10228345
    Abstract: The present disclosure provides improved sensor assemblies for gases. More particularly, the present disclosure provides for gas sensor assemblies operating at high temperature. Improved high temperature sensor assemblies for reducing gas are provided. In some embodiments, the present disclosure provides advantageous impedancemetric high temperature gas sensor assemblies based on electrospun nanofibers and having selectivity towards reducing gas, and related methods of use. In exemplary embodiments, the present disclosure provides for impedancemetric high temperature gas sensor assemblies having selectivity towards reducing gas. In certain embodiments, the sensor assembly includes electrospun nanofibers. Impedancemetric techniques have been employed at high operating frequency (e.g., 105 Hz) for the first time to provide real-time assemblies, methods and devices to sensitively and/or selectively detect reducing gas (e.g., CO, C3H8 (propane), etc.) at high temperatures (e.g., at about 800° C.).
    Type: Grant
    Filed: July 11, 2014
    Date of Patent: March 12, 2019
    Assignee: University of Connecticut
    Inventors: Yu Lei, Yixin Liu
  • Publication number: 20190057863
    Abstract: Methods and apparatus for forming a semiconductor structure, including depositing a doping stack having a first surface atop a high-k dielectric layer, wherein the doping stack includes at least one first metal layer having a first surface, at least one second metal layer comprising a first aluminum dopant and a first surface, wherein the second metal layer is atop the first surface of the first metal layer, and at least one third metal layer atop the first surface of the second metal layer; depositing an anneal layer atop the first surface of the doping stack; annealing the structure to diffuse at least the first aluminum dopant into the high-k dielectric layer; removing the anneal layer; and depositing at least one work function layer atop the first surface of the doping stack.
    Type: Application
    Filed: August 17, 2018
    Publication date: February 21, 2019
    Inventors: YIXIONG YANG, PAUL F. MA, WEI V. TANG, WENYU ZHANG, SHIH CHUNG CHEN, CHEN HAN LIN, CHI-CHOU LIN, YI XU, YU LEI, NAOMI YOSHIDA, LIN DONG, SIDDARTH KRISHNAN
  • Patent number: 10170321
    Abstract: Described are methods of depositing a titanium aluminum nitride film on a substrate surface with a controlled amount of carbon. The methods include exposing a substrate surface to a titanium precursor, a nitrogen reactant and an aluminum precursor with purges of the unreacted titanium and aluminum precursors and unreacted nitrogen reactants between each exposure.
    Type: Grant
    Filed: March 17, 2017
    Date of Patent: January 1, 2019
    Assignee: Applied Materials, Inc.
    Inventors: Wenyu Zhang, Wei V. Tang, Yixiong Yang, Chen-Han Lin, Yi Xu, Yu Lei, Naomi Yoshida, Lin Dong, Drew Phillips, Srividya Natarajan, Atashi Basu, Kaliappan Muthukumar, David Thompson, Paul F. Ma
  • Publication number: 20180347043
    Abstract: Embodiments of a blocker plate for use in a substrate process chamber are disclosed herein. In some embodiments, a blocker plate for use in a substrate processing chamber configured to process substrates having a given diameter includes: an annular rim; a central plate disposed within the annular rim; and a plurality of spokes coupling the central plate to the annular rim.
    Type: Application
    Filed: July 29, 2017
    Publication date: December 6, 2018
    Inventors: XIAOXIONG YUAN, YU LEI, YI XU, KAZUYA DAITO, PINGYAN LEI, DIEN-YEH WU, UMESH M. KELKAR, VIKASH BANTHIA
  • Publication number: 20180315650
    Abstract: Embodiments of the present disclosure generally relate an interconnect formed on a substrate and a method of forming the interconnect thereon. In an embodiment, a via and trench in a stack formed on the substrate. A bottom of the via is pre-treated using a first pre-treatment procedure. A sidewall of the via is pre-treated using a second pre-treatment procedure. A first metal fill material of a first type is deposited on the stack, in the via. A second metal fill material of a second type is deposited on the stack, in the trench.
    Type: Application
    Filed: April 26, 2017
    Publication date: November 1, 2018
    Inventors: He REN, Feiyue MA, Yu LEI, Kai WU, Mehul B. NAIK, Zhiyuan WU, Vikash BANTHIA, Hua AI
  • Patent number: 10116780
    Abstract: A quick communication method and device, and a storage medium are disclosed in the in present disclosure which belongs to the field of mobile communication. The method includes: displaying a quick communication key on the lock screen interface of a terminal; invoking a shortcut panel according to an operation triggered by a user on the quick communication key, and the shortcut panel includes contact information of a part or all of the contact objects from the contact list in the terminal; receiving a contact object selected by the user, and communicating with the contact object; and the device includes: a display module, an invoking module, and a communicating module. Quick communication with a contact object can be implemented by the present invention through the quick communication key on the lock screen interface of the terminal to improve the efficiency of terminal communication.
    Type: Grant
    Filed: August 26, 2014
    Date of Patent: October 30, 2018
    Assignee: TENCENT TECHNOLOGY (SHENZHEN) COMPANY LIMITED
    Inventors: Liwei Ye, Yu Lei, Bin Li
  • Publication number: 20180269065
    Abstract: Described are methods of depositing a titanium aluminum nitride film on a substrate surface with a controlled amount of carbon. The methods include exposing a substrate surface to a titanium precursor, a nitrogen reactant and an aluminum precursor with purges of the unreacted titanium and aluminum precursors and unreacted nitrogen reactants between each exposure.
    Type: Application
    Filed: March 17, 2017
    Publication date: September 20, 2018
    Inventors: Wenyu Zhang, Wei V. Tang, Yixiong Yang, Chen-Han Lin, Yi Xu, Yu Lei, Naomi Yoshida, Lin Dong, Drew Phillips, Srividya Natarajan, Atashi Basu, Kaliappan Muthukumar, David Thompson, Paul F. Ma
  • Patent number: 10062704
    Abstract: A method is provided for fabricating a buried-channel MOSFET and a surface-channel MOSFET of the same type and different gate electrodes on a same wafer. The method includes providing a semiconductor substrate having a well area and a plurality of shallow trench isolation structures; forming a threshold implantation region doped with impurity ions opposite of that of the well area in the well area for the buried-channel MOSFET; forming a gate structure including a gate dielectric layer and a gate electrode on the semiconductor substrate, wherein the gate electrode of the buried-channel MOSFET is doped with impurity ions with a same type as that of the well area, and the gate electrode of the surface-channel MOSFET is doped with impurity ions with a type opposite of that of the well area; and forming source and drain regions in the semiconductor substrate at both sides of the gate structure.
    Type: Grant
    Filed: December 29, 2016
    Date of Patent: August 28, 2018
    Assignees: SEMICONDUCTOR MANUFACTURING INTERNATIONAL (BEIJING) CORPORATION, SEMICONDUCTOR MANUFACTURING INTERNATIONAL (SHANGHAI) CORPORATION
    Inventors: Tzu Yin Chiu, Clifford Ian Drowley, Leong Tee Koh, Yu Lei Jiang, Da Qiang Yu
  • Patent number: 10024334
    Abstract: A fan frame of a centrifugal fan comprises a housing and an inlet structure. The housing includes an opening. The inlet structure is disposed at the opening and includes a top portion and an edge portion. The top portion is disposed around the opening and includes a plurality of first chamfering angles, at least one of the chamfering angles is different from the others. The edge portion extends from the top portion to the inside of the housing through the opening and includes a plurality of second chamfering angles. A centrifugal fan including the fan frame is also disclosed.
    Type: Grant
    Filed: December 4, 2013
    Date of Patent: July 17, 2018
    Assignee: DELTA ELECTRONICS, INC.
    Inventors: Tsung-Yu Lei, Ching-Hua Wu
  • Publication number: 20180190351
    Abstract: A read circuit of storage class memory comprises: an array; a read reference circuit, having the same bit line parasitic parameters as the array, having the same read transmission gate parasitic parameters as the array, used to generate a read reference current; a sense amplifier, providing the same current mirror parasitic parameters as the reference side, used to generate a read current from a selected memory cell, compare the said read current with the said read reference current and output a readout result. In the present invention, the said read current and the said read reference current are generated at the same time, the transient curve of the said read reference current is between the low resistance state read current and the high resistance state read current from an early stage. The present invention largely reduces the read access time, has a good process variation tolerance, has a wide application, and is easy to be used in the practical product.
    Type: Application
    Filed: August 25, 2016
    Publication date: July 5, 2018
    Applicant: SHANGHAI INSTITUTE OF MICROSYSTEM AND INFORMATION TECHNOLOGY, CHINESE ACADEMY OF SCIENCES
    Inventors: YU LEI, HOUPENG CHEN, XI LI, QIAN WANG, ZHITANG SONG
  • Patent number: 9989247
    Abstract: A pyrolysis-combustion dual-bed system comprises a fluidized bed, a cyclone separator, a coal ash distributor, an ash-coal mixer, a lower pyrolysis bed, a return feeder and a cleaner, wherein the cyclone separator is connected with an upper lateral side of the fluidized bed, the outlet end of the cyclone separator is connected with the inlet end of the coal ash distributor; the two outlets of the lower pyrolysis bed are respectively connected with the inlet of an external bed and the inlet of the cleaner; the outlet of the external bed is connected with the inlet of the return feeder; the return feeder close to the lower lateral side of the fluidized bed is connected with the inlet on the lower lateral side of the fluidized bed; and the outlet of the cleaner is connected with the inlet of the lower lateral side of the fluidized bed.
    Type: Grant
    Filed: September 25, 2013
    Date of Patent: June 5, 2018
    Assignee: DONGFANG ELECTRIC CORPORATION
    Inventors: Liyong Cao, Qi Du, Wei Fan, Zhengning Liu, Pan Guo, Jiang Liu, Yuan Zhang, Chunfei Zhang, Chunyun Hu, Xiaoguang Zhang, Yu Lei
  • Publication number: 20180144973
    Abstract: Methods to selectively deposit capping layers on a copper surface relative to a dielectric surface comprising separately the copper surface to a cobalt precursor gas and a tungsten precursor gas, each in a separate processing chamber. The copper surface and the dielectric surfaces can be substantially coplanar. The combined thickness of cobalt and tungsten capping films is in the range of about 2 ? to about 60 ?.
    Type: Application
    Filed: November 1, 2017
    Publication date: May 24, 2018
    Inventors: Weifeng Ye, Jiang Lu, Feng Chen, Zhiyuan Wu, Kai Wu, Vikash Banthia, He Ren, Sang Ho Yu, Mei Chang, Feiyue Ma, Yu Lei, Keyvan Kashefizadeh, Kevin Moraes, Paul F. Ma, Hua Ai
  • Publication number: 20180145034
    Abstract: Methods of forming a contact line comprising cleaning the surface of a cobalt film in a trench and forming a protective layer on the surface of the cobalt, the protective layer comprising one or more of a silicide or germide. Semiconductor devices with the contact lines are also disclosed.
    Type: Application
    Filed: November 20, 2017
    Publication date: May 24, 2018
    Inventors: Yi Xu, Feiyue Ma, Yu Lei, Kazuya Daito, Vikash Banthia, Kai Wu, Jenn Yue Wang, Mei Chang