Abstract: A method of forming a semiconductor device structure includes forming a nucleation layer within at least one feature. The method includes exposing the nucleation layer to a nitrogen plasma treatment. The nitrogen plasma treatment preferentially treats the top field and sidewalls while leaving the bottom surface substantially untreated to encourage bottom up metal growth.

Abstract: A method of forming a structure on a substrate includes forming a tungsten nucleation layer within at least one feature. The method includes forming the nucleation layer via a cyclic vapor deposition process. The cyclic vapor deposition process includes forming a portion of the nucleation layer and then exposing the exposing the nucleation layer a chemical vapor transport (CVT) process to remove impurities from the portion of the nucleation layer. The CVT process may be performed at a temperature of 400 degrees Celsius or less and comprises forming a plasma from a processing gas comprising greater than or equal to 90% of hydrogen gas of a total flow of hydrogen gas and oxygen.

Abstract: A method and apparatus for tungsten gap-fill in semiconductor devices are provided. The method includes performing a gradient oxidation process to oxidize exposed portions of a liner layer, wherein the gradient oxidation process preferentially oxidizes an overhang portion of the liner layer, which obstructs or blocks top openings of one or more features formed within a field region of a substrate. The method further includes performing an etchback process to remove or reduce the oxidized overhang portion of the liner layer, exposing the liner layer to a chemical vapor transport (CVT) process to remove metal oxide remaining from the gradient oxidation process and the etchback process, and performing a tungsten gap-fill process to fill or partially fill the one or more features.

Abstract: A method and apparatus for a gap-fill in semiconductor devices are provided. The method includes forming a metal seed layer on an exposed surface of the substrate, wherein the substrate has features in the form of trenches or vias formed in a top surface of the substrate, the features having sidewalls and a bottom surface extending between the sidewalls. A gradient oxidation process is performed to oxidize exposed portions of the metal seed layer to form a metal oxide, wherein the gradient oxidation process preferentially oxidizes a field region of the substrate over the bottom surface of the features. An etch back process removes or reduces the oxidized portion of the seed layer. A metal gap-fill process fills or partially fills the features with a gap fill material.

Abstract: A method and apparatus for a gap-fill in semiconductor devices are provided. The method includes forming a metal seed layer on an exposed surface of the substrate, wherein the substrate has features in the form of trenches or vias formed in a top surface of the substrate, the features having sidewalls and a bottom surface extending between the sidewalls. A gradient oxidation process is performed in a first process chamber to oxidize exposed portions of the metal seed layer to form a metal oxide, wherein the gradient oxidation process preferentially oxidizes a field region of the substrate over the bottom surface of the features. An etch back process is performed in the first process chamber removes or reduces the oxidized portion of the seed layer. A metal gap-fill process fills or partially fills the features with a gap fill material.

Abstract: The present disclosure relates to positive-electrode pre-lithiation agents. One example positive-electrode pre-lithiation agent includes a catalyst and a lithium-rich material, where the catalyst is an oxide positive-electrode active material, an intensity ratio of a crystal plane diffraction peak of the catalyst to a crystal plane diffraction peak of the catalyst is less than or equal to 2, the catalyst is configured to catalyze the lithium-rich material to decompose to release active lithium, and the lithium-rich material includes at least one of lithium oxide, lithium peroxide, lithium fluoride, lithium carbonate, lithium oxalate, or lithium acetate.

Abstract: Embodiments of the disclosure advantageously provide in situ selectively deposited molybdenum films having reduced resistivity and methods of reducing or eliminating lateral growth of a selectively deposited molybdenum layer. Additional embodiments provide integrated clean and deposition processes which improve the selectivity of in situ selectively deposited molybdenum films on features, such as a via. Further embodiments advantageously provide methods of improving uniformity and selectivity of bottom-up gap fill for vias with improved film properties.

Abstract: Embodiments of methods and associated apparatus for filling a feature in a substrate are provided herein. In some embodiments, a method of depositing tungsten in features of a substrate includes: depositing a seed layer consisting essentially of tungsten in the features via a physical vapor deposition (PVD) process; and depositing a bulk layer consisting essentially of tungsten in the features via a chemical vapor deposition (CVD) process to fill the features such that the deposition of the bulk layer is selective to within the features as compared to a field region of the substrate, wherein the CVD process is performed by flowing hydrogen gas (H2) at a first flow rate and a tungsten precursor at a second flow rate, and wherein the first flow rate is less than the second flow rate.

Abstract: Method for selectively oxidizing the dielectric surface of a substrate surface comprising a dielectric surface and a metal surface are discussed. Method for cleaning a substrate surface comprising a dielectric surface and a metal surface are also discussed. The disclosed methods oxidize the dielectric surface and/or clean the substrate surface using a plasma generated from hydrogen gas and oxygen gas. The disclosed method may be performed in a single step without the use of separate competing oxidation and reduction reactions. The disclosed methods may be performed at a constant temperature and/or within a single processing chamber.

Abstract: A device for monitoring and identifying a mountain torrent and debris flow and a method for early warning of disasters relate to the technical field of debris flow protection. The device includes a computation device, sensors, an amplifier and an analog-to-digital converter. The sensors convert an acquired impact force signal into a digital signal by the amplifier and the analog-to-digital converter, and transmits the digital signal to the computation device. The computation device utilizes the digital signal to compute an energy coefficient of a liquid impact signal and a solid-liquid impact energy ratio, and a debris flow mode is monitored and identified in combination with a threshold range of the energy coefficient and a threshold range of the solid-liquid impact energy ratio. The device identifies the nature of the mountain torrent and debris flow through time-frequency analysis of an impact force signal generated by the debris flow to sensors.

Abstract: Methods for pre-cleaning substrates having metal and dielectric surfaces are described. The substrate is exposed to a strong reductant to remove contaminants from the metal surface and damage the dielectric surface. The substrate is then exposed to an oxidation process to repair the damage to the dielectric surface and oxidize the metal surface. The substrate is then exposed to a weak reductant to reduce the metal oxide to a pure metal surface without substantially affecting the dielectric surface. Processing tools and computer readable media for practicing the method are also described.

Abstract: A method includes receiving a plurality of sets of sensor data associated with a processing chamber of a substrate processing system. Each of the plurality of sets of sensor data comprises a corresponding sensor value of the processing chamber mapped to a corresponding spacing value of the processing chamber. The method further includes providing the plurality of sets of sensor data as input to a trained machine learning model. The method further includes obtaining, from the trained machine learning model, one or more outputs indicative of a health of the processing chamber. The method further includes causing, based on the one or more outputs, performance of one or more corrective actions associated with the processing chamber.

Abstract: Provided are compositions that include at least one two-dimensional layer of an inorganic compound and at least one layer of an organic compound in the form of one or more polypeptides. Methods of making and using the materials are provided. The organic layer contains one or more polypeptides, each of which have alternating repeats of crystallite-forming subsequences and amorphous subsequences. The crystallite-forming subsequences form crystallites comprising stacks of one or more beta-sheets. The amorphous subsequences form a network of hydrogen bonds. A method includes i) combining one or more polypeptides with an inorganic material and an organic solvent, and ii) depositing one or more polypeptides, the inorganic material and the organic solvent onto a substrate. These steps can be repeated to provide a composite material that is a multilayer composite material. The composite materials can be used in a wide array of textile, electronic, semi-conducting, and other applications.

Abstract: Methods for pre-cleaning substrates having metal and dielectric surfaces are described. A substrate comprising a surface structure with a metal bottom, dielectric sidewalls, and a field of dielectric is exposed to a dual plasma treatment in a processing chamber to remove chemical residual and/or impurities from the metal bottom, the dielectric sidewalls, and/or the field of the dielectric and/or repair surface defects in the dielectric sidewalls and/or the field of the dielectric. The dual plasma treatment comprises a direct plasma and a remote plasma.

Abstract: A wearable device, a signal processing method and a signal processing device are disclosed. The wearable device includes a processor and a signal collector electrically connected to the processor. The signal collector includes at least one electroencephalogram sensor configured to collect an electroencephalogram signal and at least one electrooculogram sensor configured to collect an electrooculogram signal. The processor is configured to generate a control signal based on the electroencephalogram signal and the electrooculogram signal, and the electroencephalogram sensor and the electrooculogram sensor are different sensors.

Abstract: This disclosure relates to medicines, and more particularly to a platelet aggregation inhibitor, a pharmaceutical composition containing the same and a preparation and application thereof. The platelet aggregation inhibitor provided herein is a compound of formula (I), or a pharmaceutically-acceptable salt, a tautomer or a pharmaceutically-acceptable solvate thereof. This application also provides an application of the compound of formula (I), or a pharmaceutically-acceptable salt, a tautomer, a pharmaceutically-acceptable solvate or a pharmaceutical composition thereof in the treatment of thrombus.

Abstract: The present invention provides methods, compositions, systems, and kits comprising nano-satellite complexes and/or serum albumin carrier complexes, which are used for modulating antigen-specific immune response (e.g., enhancing anti-tumor immunity). In certain embodiments, the nano-satellite complexes comprise: a) a core nanoparticle complex comprising a biocompatible coating surrounding a nanoparticle core; b) at least one satellite particle attached to, or absorbed to, the biocompatible coating; and c) an antigenic component conjugated to, or absorbed to, the at least one satellite particle component. In certain embodiments, the complexes further comprise: d) an type I interferon agonist agent. In some embodiments, the serum albumin complexes comprise: a) at least part of a serum albumin protein, b) an antigenic component conjugated to the carrier protein, and c) a type I interferon agonist agent.

Abstract: A distributed multi-node control system (100) and method, relating to the field of control technology. The distributed multi-node control system (100) comprises: a first control node (11), a second control node (12), a plurality of servo nodes (20) and a plurality of execution devices (30), the first control node (11) and the second control node (12) being respectively communicationally connected to the plurality of servo nodes (20), the servo nodes (20) being electrically connected to the execution devices (30) and configured to control operating states of the corresponding execution devices (30), the first control node (11) being configured to control an operating state of at least one first servo node (21) among the plurality of servo nodes (20), the second control node (12) being configured to control an operating state of at least one second servo node (22) among the plurality of servo nodes (20).

Abstract: A method for co-hosting and an electronic device are disclosed. In the method, a co-hosting establishment instruction is acquired; configuration information of the first live streaming client is acquired in response to the co-hosting establishment instruction; first communication protocol information corresponding to a co-hosting process is acquired from the configuration information; and co-hosting with a second live streaming client is established based on the first communication protocol information. The co-hosting process is a general process in different types of co-hosting services, and includes a co-hosting establishment process.

Abstract: The present disclosure relates to the field of early warning for geological disasters, and discloses an early warning method for icefall-caused moraine lake outburst disasters, which aims at solving the problems of low early warning precision and difficulty in implementation in an early warning solution of the prior art. The method includes: S1, calculating topographic parameters of moraine lakes and upstream glaciers thereof, and filtering a moraine lake to undertake focal monitoring; S2, calculating a freezing-thawing cycle index and a regional accumulated temperature index of an upstream glacier region for the moraine lake to undertake focal monitoring, S3, calculating a catastrophic climate determination factor TG-year, wherein if the catastrophic climate determination factor TG-year satisfies a corresponding catastrophic climate determination condition, an early warning condition is satisfied, otherwise the early warning condition is not satisfied; and S4, implementing early warning.