Abstract: An electrophoresis display with high aperture ratio includes a control substrate having a first face and a second face, a driving circuit layer, a control electrode layer, an electrophoresis layer, and an opposite substrate. The driving circuit layer includes a plurality of thin film transistors (TFT), a plurality of gate lines, and plurality of data lines. Each of the gate line is connected to the gates of the TFTs and each of the data lines is connected to the sources or the drains of the TFTs. The sum of the data line width and the gate line width is not larger than 10 ?m. The aperture ratio of the electrophoresis display, viewed from the first face of the control substrate and toward a display area of the electrophoresis display, is not less than 80%.

Abstract: In some embodiments, the present disclosure relates to an integrated device, including a substrate comprising a channel region; a gate structure disposed on the substrate over the channel region; a first doped region of a first doping type on a first side of the gate structure; a second doped region of the first doping type on a second side of the gate structure; a shallow trench isolation (STI) structure disposed on an opposite side of the first doped region from the gate structure and having a bottom surface at a first depth beneath a top surface of the substrate; a shallow-shallow trench isolation (SSTI) structure extending from the second doped region to the gate structure, the SSTI structure having a bottom surface at a second depth beneath the top surface of the substrate, where the second depth is less than the first depth.

Abstract: A method of selective metal removal via gradient oxidation for a gap-fill includes performing process cycles, each process cycle including placing a wafer having a semiconductor structure thereon into a first processing station, the semiconductor structure including a dielectric layer patterned with a feature formed therein and a seed layer formed on sidewalls and a bottom surface of the feature and a top surface of the dielectric layer, performing a reduction process on the wafer in the first processing station, performing a gradient oxidation process on the wafer in the second processing station, performing a gradient etch process on the wafer in the third processing station, and performing the gradient etch process on the wafer in the fourth processing station, wherein the first, second, third, and fourth processing stations are located in an interior volume of a processing chamber.

Abstract: Embodiments of the present disclosure provide a crystal growth device including: a crucible including a raw material cavity for placing a raw material and a growth cavity for crystal growth; and at least one insulation device disposed on at least one side surface outside the crucible.

Abstract: Provided is a processing chamber configured to contain a semiconductor substrate in a processing region of the chamber. The processing chamber includes a remote plasma unit and a direct plasma unit, wherein one of the remote plasma unit or the direct plasma unit generates a remote plasma and the other of the remote plasma unit or the direct plasma unit generates a direct plasma. The combination of a remote plasma unit and a direct plasma unit is used to remove, etch, clean, or treat residue on a substrate from previous processing and/or from native oxide formation. The combination of a remote plasma unit and direct plasma unit is used to deposit thin films on a substrate.

Abstract: A backplane, a backlight source, an illumination device and a displaying device. The backplane comprises a substrate; a first metal trace layer disposed on one surface of the substrate; an insulating layer disposed on a side, away from the substrate, of the first metal trace layer; a second metal trace layer disposed on a side, away from the substrate, of the insulating layer, an overlapping area existing between an orthographic projection of the second metal trace layer on the substrate and an orthographic projection of the first metal trace layer on the substrate; and a barrier layer disposed between the first metal trace layer and the second metal trace layer, an orthographic projection of the barrier layer on the substrate covering the overlapping area, and the barrier layer being used for preventing metals in the first metal trace layer and the second metal trace layer from growing towards each other.

Abstract: The present invention provides a method for synthesizing tyloxapol of formula (I), including the following steps: first reacting p-tert-octylphenol of formula (III) with formaldehyde under alkaline conditions to obtain 2,5-dimethylol p-tert-octylphenol of formula (IV); then reacting 2,5-dimethylol p-tert-octylphenol with p-tert-octylphenol of formula (III) under acidic conditions to obtain the phenolic resin of formula (II); and finally, reacting the phenolic resin of formula (II) with ethylene oxide to obtain tyloxapol of formula (I).

Abstract: The subject disclosure relates to a method and apparatus for reducing a one-shot HARQ-ACK codebook size. One embodiment of the subject disclosure provides a method performed by a User Equipment (UE), including receiving, from a base station (BS), a first signaling configuring a first plurality of carriers, wherein HARQ-ACK feedback for the first plurality of carriers is transmitted in same PUCCH; receiving, from the BS, Downlink Control Information (DCI) requesting HARQ-ACK feedback for one or more carriers of the first plurality of carriers; and transmitting, to the BS, a HARQ-ACK codebook in the PUCCH, wherein the HARQ-ACK codebook comprises the HARQ-ACK feedback for the one or more carriers of the first plurality of carriers.

Abstract: Methods and systems of tool-free adjustment of torque used to maintain the viewing angle of a display stand are performed. In one exemplary embodiment, a method is performed by a device having a platform hingedly coupled to a base. A bar rotatably supported by the base includes a left-hand threaded portion, a right-hand threaded portion, and a grip configured to enable simultaneous rotation of both threaded portions. A first nut is in threaded engagement with the left-hand threaded portion, and a second nut is in threaded engagement with the right-hand threaded portion. A first spring is coupled to the first nut and the platform, and a second spring is coupled to the second nut and the platform. When the bar is rotated via the grip, the first and second nuts move in opposing directions to enable simultaneous tension adjustment of the first and second springs.

Abstract: Provided are a system and a method for impact testing and monitoring of a high-energy flexible net. The system includes a vertical impact testing unit, a slope impact testing unit, an impact simulation unit, and an impact monitoring unit. The vertical impact testing unit includes a vertically positioned gravity wall. The slope impact testing unit includes a wall slope positioned perpendicularly to a second side of the gravity wall. A first side of the gravity wall and a slope surface of the wall slope are securely provided with a flexible net, respectively. The impact simulation unit includes an impact assembly and a lifting assembly. The impact monitoring unit is configured to monitor a deformation result and an internal force change result of the flexible net.

Abstract: Provided is a method for preparing oxidized glutathione and a new crystal form and impurity thereof, including the following steps: using dimethyl sulfoxide (DMSO) as an oxidizing agent to oxidize reduced glutathione to crude oxidized glutathione; and recrystallizing and refining in purified water to obtain high-purity heptahydrate crystals of oxidized glutathione.

Abstract: A method of gap filling a feature on a substrate decreases the feature-to-feature gap fill height variation by using a tungsten halide soak treatment. In some embodiments, the method may include heating a substrate to a temperature of approximately 350 degrees Celsius to approximately 450 degrees Celsius, exposing the substrate to a tungsten halide gas at a process pressure of approximately 5 Torr to approximately 25 Torr, soaking the substrate for a soak time of approximately 5 seconds to approximately 60 seconds with the tungsten halide gas, and performing a metal preclean process and a gap fill deposition on a plurality of features on the substrate after soaking of the substrate has completed.

Abstract: Embodiments herein relate to a method, semiconductor device structures, and multi-chamber processing system for exposing a semiconductor device structure to an oxidizing plasma to form an oxide layer on at least one electrical connection formed in at least one feature formed within a dielectric layer of the semiconductor device structure, performing an etch process to remove the oxide layer and form an etch recess between a portion of the electrical connection and the dielectric layer At least a portion of the etch recess extends underneath at least a portion of the dielectric layer, and filling the at least one feature and the etch recess with a metal material.

Abstract: A method of pre-cleaning in a semiconductor structure includes performing a plasma pre-treatment process to remove impurities from a surface of a semiconductor structure comprising a metal layer and a dielectric layer, performing a selective etch process to remove molybdenum oxide from a surface of the metal layer, the selective etch process comprising soaking the semiconductor structure in a precursor including molybdenum chloride (MoCl5, MoCl6) at a temperature of between 250° C. and 350° C., and performing a post-treatment process to remove chlorine residues and by-products of the selective etch process on the surface of the semiconductor structure.

Abstract: Embodiments relate to the field of hexagonal boron nitride (hBN). In particular, to an alkali metal (A) intercalated hBN material. The A-intercalated hBN is chemically active, electrically conducting, and superconducting. The A-intercalated hBN is spontaneously soluble in aprotic organic solvents to form dispersions of exfoliated reduced 2-dimensional hBN sheets in organic solvents. The dispersions of exfoliated reduced 2-dimensional hBN materials in organic solvents materials can be reacted with metal salts to form 2-dimensional hBN-supported metal and/or metal oxide nanoparticle composites. The solutions/dispersions of exfoliated reduced 2-dimensional hBN materials in organic solvents can be transferred to water or organic solvents to form stable aqueous and organic suspensions of 2-dimensional hBN.

Abstract: A method of metal gapfill including depositing a metal layer on a dielectric layer present on a field and/or in an opening of a feature via plasma enhanced atomic layer deposition utilizing a metal halide precursor and a plasma comprising hydrogen and a noble gas; and depositing a metal gapfill material on the field and in the opening directly over the metal layer, wherein the metal gapfill material completely fills the opening.

Abstract: Examples of a crystal material and a preparation method are described. One example crystal material includes a secondary particle formed by agglomerating a plurality of monocrystalline grains. There are grain boundaries between the grains. Another example crystal material includes a monocrystalline particle. Each monocrystalline particle includes one monocrystalline grain. The crystal material is obtained by modifying a crystal material primary product in which monocrystalline particles have few defects, a gap at a grain boundary of a secondary particle is small, and bonding between grains is strong.

Abstract: Semiconductor devices and methods for molybdenum fill in semiconductor devices are provided. In one aspect, a method for processing a semiconductor device substrate is provided. The method includes exposing at least one feature formed in a dielectric layer to a grain modification layer deposition process to deposit a grain modification layer over at least a portion of the at least one feature. The at least one feature is defined by sidewall surfaces formed in the dielectric layer and a bottom surface extending between the sidewall surfaces. The method further includes exposing the at least one feature to a molybdenum deposition process to form a molybdenum-fill layer on the grain modification layer, wherein the grain modification layer comprises a metal different from molybdenum.

Abstract: Embodiments can relate to a method for defect engineering boron nitride (BN). The method can involve forming reactive BN (RBN) by breaking B—N bonds, and activation of the RBN. Forming RBN can involve cryo-milling, ball-milling, sonication, focused ion/electron beam irradiation, detonation, chemical treatment, and/or thermal treatment in limited oxygen. Activation of the RBN can involve chemical activation and/or electrochemical activation. The defect engineered BN can be used to form or be a component of an anode electrode. The anode electrode can include an electrically conductive member including a microstructure layer. The microstructure layer can be made of BN having a surface defect configured to provide a diffusion independent pseudocapacitive ion storage mechanism.

Abstract: Embodiments relate to organic and aqueous dispersions of exfoliated bundles and individualized carbon nanothreads, and a method for making the dispersions. Embodiments involve reducing carbon nanothread crystals by an alkali metal or a mixture of alkali metals to form a carbon nanothread alkali metal compound. The carbon nanothread alkali metal compounds can be spontaneously soluble in polar aprotic organic solvents to form stable carbon nanothread dispersions. The dispersions and methods of making the same can be used for preparing carbon nanothread films for electronic devices, electrocatalytic electrodes, sensing devices and carbon nanothread/polymer nanocomposites.