Abstract: A read circuit of storage class memory comprises: an array; a read reference circuit, having the same bit line parasitic parameters as the array, having the same read transmission gate parasitic parameters as the array, used to generate a read reference current; a sense amplifier, providing the same current mirror parasitic parameters as the reference side, used to generate a read current from a selected memory cell, compare the said read current with the said read reference current and output a readout result. In the present invention, the said read current and the said read reference current are generated at the same time, the transient curve of the said read reference current is between the low resistance state read current and the high resistance state read current from an early stage. The present invention largely reduces the read access time, has a good process variation tolerance, has a wide application, and is easy to be used in the practical product.

Abstract: Methods and apparatus for forming a semiconductor structure, including depositing a doping stack having a first surface atop a high-k dielectric layer, wherein the doping stack includes at least one first metal layer having a first surface, at least one second metal layer comprising a first aluminum dopant and a first surface, wherein the second metal layer is atop the first surface of the first metal layer, and at least one third metal layer atop the first surface of the second metal layer; depositing an anneal layer atop the first surface of the doping stack; annealing the structure to diffuse at least the first aluminum dopant into the high-k dielectric layer; removing the anneal layer; and depositing at least one work function layer atop the first surface of the doping stack.

Abstract: Methods and apparatus for forming a cobalt layer on a substrate disposed in a process chamber are disclosed herein. In the present disclosure, exposing a substrate to a first process gas including a bonding agent in an amount sufficient to facilitate bonding or adhesion of cobalt to a first surface of the substrate; and depositing cobalt upon the first surface of the substrate to form a cobalt layer is disclosed. The use of one or more silanes or molybdenum carbonyl compositions facilitate bonding or adhesion of cobalt to a first surface of the substrate. In the present disclosure, suitable substrates include substrates that do not easily bond or adhere to cobalt, such as titanium nitrate or tantalum nitrate.

Abstract: The present invention provides methods, compositions, systems, and kits comprising nano-satellite complexes and/or serum albumin carrier complexes, which are used for modulating antigen-specific immune response (e.g., enhancing anti-tumor immunity). In certain embodiments, the nano-satellite complexes comprise: a) a core nanoparticle complex comprising a biocompatible coating surrounding a nanoparticle core; b) at least one satellite particle attached to, or absorbed to, the biocompatible coating; and c) an antigenic component conjugated to, or absorbed to, the at least one satellite particle component. In certain embodiments, the complexes further comprise: d) an type I interferon agonist agent. In some embodiments, the serum albumin complexes comprise: a) at least part of a serum albumin protein, b) an antigenic component conjugated to the carrier protein, and c) a type I interferon agonist agent.

Abstract: A read-out circuit and a read-out method for a three-dimensional memory, comprises a read reference circuit and a sensitive amplifier, the read reference circuit produces read reference current capable of quickly distinguishing reading low-resistance state unit current and reading high-resistance state unit current. The read reference circuit comprises a reference unit, a bit line matching module, a word line matching module and a transmission gate parasitic parameter matching module. With respect to the parasitic effect and electric leakage of the three-dimensional memory in the plane and vertical directions, the present invention introduces the matching of bit line parasite parameters, leakage current and transmission gate parasitic parameters into the read reference current, and introduces the matching of parasitic parameters of current mirror into the read current, thereby eliminating the phenomenon of pseudo reading and reducing the read-out time.

Abstract: A display method and a display device are provided. The display method may be applied to a display device having a lens unit and a display unit for normal display, and may include steps of: detecting a first distance between the lens unit and the display unit; calculating correction information according to the first distance and transmitting the correction information to the display unit; and displaying a corrected image by the display unit according to the correction information, so that the corrected image is converged into eyes of a user via the lens unit, wherein the corrected image is obtained by correcting an original image according to the first distance.

Abstract: A steel structure cage for marine crustacean aquaculture and integration thereof into a vertical fish-crustacean aquaculture system are disclosed. The steel structure cage includes a steel frame, top, side and bottom net systems, a ballast tank system, and steel grooves. The steel frame includes internal and external steel frames. The steel grooves are fixed on upper and lower ends of the internal steel frame. Edges of the top and bottom net systems are respectively fixed into the corresponding steel grooves. The side net is welded on the internal steel frame. The ballast tank system is arranged between the internal and external steel frames. A HDPE cage is moored to the steel structure cage to form a vertical aquaculture system. Whereby, an ideal culturing environment for marine crustaceans is given and the objective of vertical aquaculture “culturing fish at top water layers and culturing prawns (crabs or cowries) at bottom water layers” can be fulfilled.

Abstract: A current compensation circuit, a virtual reality device and a control method are disclosed. The current compensation circuit includes: a first constant current sub-circuit, configured to generate a driving current of a backlight module; a second constant current sub-circuit, configured to generate a compensation current of the backlight module; a compensation gating sub-circuit, configured to determine whether to select the second constant current sub-circuit to supply power to the backlight module; and a black insertion control signal generation sub-circuit, configured to generate a black insertion control signal, connected with the first constant current sub-circuit and the compensation gating sub-circuit, and configured to control, by the black insertion control signal, the first constant current sub-circuit and the second constant current sub-circuit to simultaneously supply power to or power off the backlight module, so that the black light module realizes a backlight black insertion.

Abstract: Embodiments of a blocker plate for use in a substrate process chamber are disclosed herein. In some embodiments, a blocker plate for use in a substrate processing chamber configured to process substrates having a given diameter includes: an annular rim; a central plate disposed within the annular rim; and a plurality of spokes coupling the central plate to the annular rim.

Abstract: Embodiments of a blocker plate for use in a substrate process chamber are disclosed herein. In some embodiments, a blocker plate for use in a substrate processing chamber configured to process substrates having a given diameter includes: an annular rim; a central plate disposed within the annular rim; and a plurality of spokes coupling the central plate to the annular rim.

Abstract: Provided are compositions that include at least one two-dimensional layer of an inorganic compound and at least one layer of an organic compound in the form of one or more polypeptides. Methods of making and using the materials are provided. The organic layer contains one or more polypeptides, each of which have alternating repeats of crystallite-forming subsequences and amorphous subsequences. The crystallite-forming subsequences form crystallites comprising stacks of one or more beta-sheets. The amorphous subsequences form a network of hydrogen bonds. A method includes i) combining one or more polypeptides with an inorganic material and an organic solvent, and ii) depositing one or more polypeptides, the inorganic material and the organic solvent onto a substrate. These steps can be repeated to provide a composite material that is a multilayer composite material. The composite materials can be used in a wide array of textile, electronic, semi-conducting, and other applications.

Abstract: Apparatuses and methods to provide electronic devices having metal films are provided. Some embodiments of the disclosure utilize a metallic tungsten layer as a liner that is filled with a metal film comprising cobalt. The metallic tungsten layer has good adhesion to the cobalt leading to enhanced cobalt gap-fill performance.

Abstract: A biotemplated nanomaterial can include a crystalline perovskite.

Abstract: To deliver surfactants or tracers to underground oil fields, inorganic encapsulated surfactant nanoparticles or microparticles that are stable for several weeks under high temperature and high salt conditions can be used.

Abstract: An image processing method. The method includes determining a first mapping relationship between first coordinates in a first coordinate system of a Multi-Resolution-Shading image and second coordinates in a second coordinate system of a Multi-Resolution-Shading screen image; and applying an anti-distortion process to the Multi-Resolution-Shading image based on the first mapping relationship, thereby obtaining an anti-distortion image.

Abstract: Methods and apparatus for processing substrates are provided herein. In some embodiments, a process kit for a substrate support includes: an upper edge ring made of quartz and having an upper surface and a lower surface, wherein the upper surface is substantially planar and the lower surface includes a stepped lower surface to define a radially outermost portion and a radially innermost portion of the upper edge ring.

Abstract: Interconnects and methods for forming interconnects are described and disclosed herein. The interconnect contains a stack formed on a substrate having a via and a trench formed therein, a first metal formed from a first material of a first type deposited in the via, and a second metal formed from a second material of a second type deposited in the trench.

Abstract: A floating offshore wind turbine integrated with a steel fish farming cage mainly includes a wind turbine, a wind turbine tower, a living quarter, a floating wind turbine foundation in a conic steel structure, a mooring system, a lateral net encircling the floating wind turbine foundation, a bottom net, and lifting systems. The upper end of the wind turbine tower hosts a wind turbine, and the lower end of the wind turbine tower is fixed on the floating wind turbine foundation. In the present invention, the inner space of the floating wind turbine foundation is used to form a huge farming cage, which functions for the objectives of “power exploitation on the top and fish farming at the bottom”. The foundation has excellent stability and seakeeping performance, and is applicable to deep waters.

Abstract: A frame structure includes a frame body and at least one vibration absorbing structure. The vibration absorbing structure has a support column and at least one cantilever. The cantilever has a cantilever body, a first end portion and a second end portion. One end of the support column is connected to a wall surface of the frame body. The first end portion of the cantilever is connected to the support column. The cantilever body and the second end portion extend outwardly and swing freely on the wall surface of the frame body. When the cantilever body and the second end portion are swinging, they are not in contact with any peripheral member and the frame structure.

Abstract: Methods for depositing a contact metal layer in contact structures of a semiconductor device are provided. In one embodiment, a method for depositing a contact metal layer for forming a contact structure in a semiconductor device is provided. The method comprises performing a cyclic metal deposition process to deposit a contact metal layer on a substrate and annealing the contact metal layer disposed on the substrate. The cyclic metal deposition process comprises exposing the substrate to a deposition precursor gas mixture to deposit a portion of the contact metal layer on the substrate, exposing the portion of the contact metal layer to a plasma treatment process, and repeating the exposing the substrate to a deposition precursor gas mixture and exposing the portion of the contact metal layer to a plasma treatment process until a predetermined thickness of the contact metal layer is achieved.