Patents by Inventor Yu-Lung Yeh

Yu-Lung Yeh has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 10879406
    Abstract: The present disclosure relates to an integrated chip that has a light sensing element arranged within a substrate. An absorption enhancement structure is arranged along a back-side of the substrate, and an interconnect structure is arranged along a front-side of the substrate. A reflection structure includes a dielectric structure and a plurality of semiconductor pillars that matingly engage the dielectric structure. The dielectric structure and semiconductor pillars are arranged along the front-side of the substrate and are spaced between the light sensing element and the interconnect structure. The plurality of semiconductor pillars and the dielectric structure are collectively configured to reflect incident light that has passed through the absorption enhancement structure and through the light sensing element back towards the light sensing element before the incident light strikes the interconnect structure.
    Type: Grant
    Filed: December 11, 2019
    Date of Patent: December 29, 2020
    Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Po-Han Huang, Chien Nan Tu, Chi-Yuan Wen, Ming-Chi Wu, Yu-Lung Yeh, Hsin-Yi Kuo
  • Patent number: 10868053
    Abstract: An image sensor with high quantum efficiency is provided. In some embodiments, a semiconductor substrate includes a non-porous semiconductor layer along a front side of the semiconductor substrate. A periodic structure is along a back side of the semiconductor substrate. A high absorption layer lines the periodic structure on the back side of the semiconductor substrate. The high absorption layer is a semiconductor material with an energy bandgap less than that of the non-porous semiconductor layer. A photodetector is in the semiconductor substrate and the high absorption layer. A method for manufacturing the image sensor is also provided.
    Type: Grant
    Filed: August 15, 2019
    Date of Patent: December 15, 2020
    Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Chien-Chang Huang, Chien Nan Tu, Ming-Chi Wu, Yu-Lung Yeh, Ji Heng Jiang
  • Publication number: 20200343289
    Abstract: An image sensor device is provided. The image sensor device includes a semiconductor substrate having a first side, a second side opposite to the first side, and at least one light-sensing region close to the first side. The image sensor device includes a dielectric feature covering the second side and extending into the semiconductor substrate. The dielectric feature in the semiconductor substrate surrounds the light-sensing region. The image sensor device includes a reflective layer in the dielectric feature in the semiconductor substrate, wherein a top portion of the reflective layer protrudes away from the second side, and a top surface of the reflective layer and a top surface of the insulating layer are substantially coplanar.
    Type: Application
    Filed: July 9, 2020
    Publication date: October 29, 2020
    Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Chun-Chieh FANG, Ming-Chi WU, Ji-Heng JIANG, Chi-Yuan WEN, Chien-Nan TU, Yu-Lung YEH, Shih-Shiung CHEN, Kun-Yu LIN
  • Patent number: 10782745
    Abstract: An operation method of an electronic system includes the following steps. When a first communication module of the electronic device receives a call signal, a controller of an electronic device detects whether an expansion device is electrically connected to the electronic device. Based on a result of the controller detecting whether the expansion device is electrically connected to the electronic device, it is determined whether the electronic system performs sound amplification with a first speaker of the electronic device or performs playing with a second speaker of the expansion device.
    Type: Grant
    Filed: December 27, 2018
    Date of Patent: September 22, 2020
    Assignee: COMPAL ELECTRONICS, INC.
    Inventors: I-Lung Chen, Yi-Hsuan Wu, Wang-Hung Yeh, Yi-Chang Wu, Yu-Fan Chuang, Yu-Wei Lai
  • Patent number: 10784150
    Abstract: A semiconductor structure includes a semiconductive substrate including a first surface and a second surface opposite to the first surface, a shallow trench isolation (STI) including a first portion at least partially disposed within the semiconductive substrate and tapered from the first surface towards the second surface, and a second portion disposed inside the semiconductive substrate, coupled with the first portion and extended from the first portion towards the second surface, and a void enclosed by the STI, wherein the void is at least partially disposed within the second portion of the STI.
    Type: Grant
    Filed: April 25, 2019
    Date of Patent: September 22, 2020
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.
    Inventors: Ching-Chung Su, Jiech-Fun Lu, Jian Wu, Che-Hsiang Hsueh, Ming-Chi Wu, Chi-Yuan Wen, Chun-Chieh Fang, Yu-Lung Yeh
  • Patent number: 10777076
    Abstract: A license plate recognition system and a license plate recognition method are provided. The license plate recognition system includes an image capturing module, a determination module and an output module. The image capturing module is utilized for capturing an image of a target object. The determination module is utilized for dividing the image of the target object into a plurality of image blocks. The determination module utilizes the plurality of image blocks to generate feature data and perform a data sorting process on the feature data to generate a first sorting result. The output module outputs the sorting result.
    Type: Grant
    Filed: December 13, 2018
    Date of Patent: September 15, 2020
    Assignee: National Chung-Shan Institute of Science and Technology
    Inventors: Shu-Heng Chen, Chih-Lun Liao, Cheng-Feng Shen, Li-Yen Kuo, Yu-Shuo Liu, Shyh-Jian Tang, Chia-Lung Yeh
  • Patent number: 10734427
    Abstract: A method for forming an image sensor device is provided. The method includes providing a semiconductor substrate including a front surface, a back surface opposite to the front surface, at least one light-sensing region close to the front surface, and a first trench surrounding the light-sensing region. The method includes forming an insulating layer over the back surface and in the first trench. A void is formed in the insulating layer in the first trench, and the void is closed. The method includes removing the insulating layer over the void to open up the void. The opened void forms a second trench partially in the first trench. The method includes filling a reflective structure in the second trench. The reflective structure has a light reflectivity ranging from about 70% to about 100%.
    Type: Grant
    Filed: February 15, 2019
    Date of Patent: August 4, 2020
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: Chun-Chieh Fang, Ming-Chi Wu, Ji-Heng Jiang, Chi-Yuan Wen, Chien-Nan Tu, Yu-Lung Yeh, Shih-Shiung Chen, Kun-Yu Lin
  • Patent number: 10707361
    Abstract: The present disclosure relates to an integrated chip that has a light sensing element arranged within a substrate. An absorption enhancement structure is arranged along a back-side of the substrate, and an interconnect structure is arranged along a front-side of the substrate. A reflection structure includes a dielectric structure and a plurality of semiconductor pillars that matingly engage the dielectric structure. The dielectric structure and semiconductor pillars are arranged along the front-side of the substrate and are spaced between the light sensing element and the interconnect structure. The plurality of semiconductor pillars and the dielectric structure are collectively configured to reflect incident light that has passed through the absorption enhancement structure and through the light sensing element back towards the light sensing element before the incident light strikes the interconnect structure.
    Type: Grant
    Filed: September 24, 2019
    Date of Patent: July 7, 2020
    Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Po-Han Huang, Chien Nan Tu, Chi-Yuan Wen, Ming-Chi Wu, Yu-Lung Yeh, Hsin-Yi Kuo
  • Publication number: 20200176306
    Abstract: Various embodiments of the present application are directed to a method for forming a semiconductor-on-insulator (SOI) device with an impurity competing layer to absorb potential contamination metal particles during an annealing process, and the SOI structure thereof. In some embodiments, an impurity competing layer is formed on the dummy substrate. An insulation layer is formed over a support substrate. A front side of the dummy wafer is bonded to the insulation layer. An annealing process is performed and the impurity competing layer absorbs metal from an upper portion of the dummy substrate. Then, a majority portion of the dummy substrate is removed including the impurity competing layer, leaving a device layer of the dummy substrate on the insulation layer.
    Type: Application
    Filed: August 21, 2019
    Publication date: June 4, 2020
    Inventors: Yu-Hung Cheng, Pu-Fang Chen, Cheng-Ta Wu, Po-Jung Chiang, Ru-Liang Lee, Victor Y. Lu, Yen-Hsiu Chen, Yeur-Luen Tu, Yu-Lung Yeh, Shi-Chieh Lin
  • Publication number: 20200111923
    Abstract: The present disclosure relates to an integrated chip that has a light sensing element arranged within a substrate. An absorption enhancement structure is arranged along a back-side of the substrate, and an interconnect structure is arranged along a front-side of the substrate. A reflection structure includes a dielectric structure and a plurality of semiconductor pillars that matingly engage the dielectric structure. The dielectric structure and semiconductor pillars are arranged along the front-side of the substrate and are spaced between the light sensing element and the interconnect structure. The plurality of semiconductor pillars and the dielectric structure are collectively configured to reflect incident light that has passed through the absorption enhancement structure and through the light sensing element back towards the light sensing element before the incident light strikes the interconnect structure.
    Type: Application
    Filed: December 11, 2019
    Publication date: April 9, 2020
    Inventors: Po-Han Huang, Chien Nan Tu, Chi-Yuan Wen, Ming-Chi Wu, Yu-Lung Yeh, Hsin-Yi Kuo
  • Publication number: 20200090506
    Abstract: A license plate recognition system and a license plate recognition method are provided. The license plate recognition system includes an image capturing module, a determination module and an output module. The image capturing module is utilized for capturing an image of a target object. The determination module is utilized for dividing the image of the target object into a plurality of image blocks. The determination module utilizes the plurality of image blocks to generate feature data and perform a data sorting process on the feature data to generate a first sorting result. The output module outputs the sorting result.
    Type: Application
    Filed: December 13, 2018
    Publication date: March 19, 2020
    Inventors: Shu-Heng Chen, Chih-Lun Liao, Cheng-Feng Shen, Li-Yen Kuo, Yu-Shuo Liu, Shyh-Jiang Tang, Chia-Lung Yeh
  • Patent number: 10553733
    Abstract: The present disclosure relates to an integrated chip that has a light sensing element arranged within a substrate. An absorption enhancement structure is arranged along a back-side of the substrate, and an interconnect structure is arranged along a front-side of the substrate. A reflection structure includes a dielectric structure and a plurality of semiconductor pillars that matingly engage the dielectric structure. The dielectric structure and semiconductor pillars are arranged along the front-side of the substrate and are spaced between the light sensing element and the interconnect structure. The plurality of semiconductor pillars and the dielectric structure are collectively configured to reflect incident light that has passed through the absorption enhancement structure and through the light sensing element back towards the light sensing element before the incident light strikes the interconnect structure.
    Type: Grant
    Filed: September 27, 2017
    Date of Patent: February 4, 2020
    Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Po-Han Huang, Chien Nan Tu, Chi-Yuan Wen, Ming-Chi Wu, Yu-Lung Yeh, Hsin-Yi Kuo
  • Patent number: 10553628
    Abstract: An image sensor with high quantum efficiency is provided. In some embodiments, a semiconductor substrate includes a non-porous semiconductor layer along a front side of the semiconductor substrate. A periodic structure is along a back side of the semiconductor substrate. A high absorption layer lines the periodic structure on the back side of the semiconductor substrate. The high absorption layer is a semiconductor material with an energy bandgap less than that of the non-porous semiconductor layer. A photodetector is in the semiconductor substrate and the high absorption layer. A method for manufacturing the image sensor is also provided.
    Type: Grant
    Filed: September 11, 2018
    Date of Patent: February 4, 2020
    Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Chien-Chang Huang, Chien Nan Tu, Ming-Chi Wu, Yu-Lung Yeh, Ji Heng Jiang
  • Publication number: 20200020816
    Abstract: The present disclosure relates to an integrated chip that has a light sensing element arranged within a substrate. An absorption enhancement structure is arranged along a back-side of the substrate, and an interconnect structure is arranged along a front-side of the substrate. A reflection structure includes a dielectric structure and a plurality of semiconductor pillars that matingly engage the dielectric structure. The dielectric structure and semiconductor pillars are arranged along the front-side of the substrate and are spaced between the light sensing element and the interconnect structure. The plurality of semiconductor pillars and the dielectric structure are collectively configured to reflect incident light that has passed through the absorption enhancement structure and through the light sensing element back towards the light sensing element before the incident light strikes the interconnect structure.
    Type: Application
    Filed: September 24, 2019
    Publication date: January 16, 2020
    Inventors: Po-Han Huang, Chien Nan Tu, Chi-Yuan Wen, Ming-Chi Wu, Yu-Lung Yeh, Hsin-Yi Kuo
  • Publication number: 20200006410
    Abstract: A method includes etching a semiconductor substrate to form a trench, filling a dielectric layer into the trench, with a void being formed in the trench and between opposite portions of the dielectric layer, etching the dielectric layer to reveal the void, forming a diffusion barrier layer on the dielectric layer, and forming a high-reflectivity metal layer on the diffusion barrier layer. The high-reflectivity metal layer has a portion extending into the trench. A remaining portion of the void is enclosed by the high-reflectivity metal layer.
    Type: Application
    Filed: September 4, 2018
    Publication date: January 2, 2020
    Inventors: Ming-Chi Wu, Chun-Chieh Fang, Bo-Chang Su, Chien Nan Tu, Yu-Lung Yeh, Kun-Yu Lin, Shih-Shiung Chen
  • Patent number: 10506739
    Abstract: A laptop computer including a main body, a fan disposed in a receiving space of the main body, a keyboard assembly movably disposed on the main body, and a heat dissipation assembly movably disposed in the main body and linked with the keyboard assembly is provided. The main body has an air outlet and at least one first air inlet. In a process of the keyboard assembly gradually moving out of the main body, the keyboard assembly drives the heat dissipation assembly to move in the main body and form a second air inlet in the main body to communicate with the receiving space.
    Type: Grant
    Filed: December 27, 2018
    Date of Patent: December 10, 2019
    Assignee: COMPAL ELECTRONICS, INC.
    Inventors: Shang-Che Lee, I-Lung Chen, Yi-Hsuan Wu, Wang-Hung Yeh, Chang-Yuan Wu, Jie-Ting Hsieh, Yu-Fan Chuang
  • Publication number: 20190371835
    Abstract: An image sensor with high quantum efficiency is provided. In some embodiments, a semiconductor substrate includes a non-porous semiconductor layer along a front side of the semiconductor substrate. A periodic structure is along a back side of the semiconductor substrate. A high absorption layer lines the periodic structure on the back side of the semiconductor substrate. The high absorption layer is a semiconductor material with an energy bandgap less than that of the non-porous semiconductor layer. A photodetector is in the semiconductor substrate and the high absorption layer. A method for manufacturing the image sensor is also provided.
    Type: Application
    Filed: August 15, 2019
    Publication date: December 5, 2019
    Inventors: Chien-Chang Huang, Chien Nan Tu, Ming-Chi Wu, Yu-Lung Yeh, Ji Heng Jiang
  • Patent number: 10438980
    Abstract: An image sensor with high quantum efficiency is provided. In some embodiments, a semiconductor substrate includes a non-porous semiconductor layer along a front side of the semiconductor substrate. A periodic structure is along a back side of the semiconductor substrate. A high absorption layer lines the periodic structure on the back side of the semiconductor substrate. The high absorption layer is a semiconductor material with an energy bandgap less than that of the non-porous semiconductor layer. A photodetector is in the semiconductor substrate and the high absorption layer. A method for manufacturing the image sensor is also provided.
    Type: Grant
    Filed: May 31, 2017
    Date of Patent: October 8, 2019
    Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Chien-Chang Huang, Chien Nan Tu, Ming-Chi Wu, Yu-Lung Yeh, Ji Heng Jiang
  • Publication number: 20190252241
    Abstract: A semiconductor structure includes a semiconductive substrate including a first surface and a second surface opposite to the first surface, a shallow trench isolation (STI) including a first portion at least partially disposed within the semiconductive substrate and tapered from the first surface towards the second surface, and a second portion disposed inside the semiconductive substrate, coupled with the first portion and extended from the first portion towards the second surface, and a void enclosed by the STI, wherein the void is at least partially disposed within the second portion of the STI.
    Type: Application
    Filed: April 25, 2019
    Publication date: August 15, 2019
    Inventors: Ching-Chung SU, Jiech-Fun LU, Jian WU, Che-Hsiang HSUEH, Ming-Chi WU, Chi-Yuan WEN, Chun-Chieh FANG, Yu-Lung YEH
  • Publication number: 20190212790
    Abstract: An operation method of an electronic system includes the following steps. When a first communication module of the electronic device receives a call signal, a controller of an electronic device detects whether an expansion device is electrically connected to the electronic device. Based on a result of the controller detecting whether the expansion device is electrically connected to the electronic device, it is determined whether the electronic system performs sound amplification with a first speaker of the electronic device or performs playing with a second speaker of the expansion device.
    Type: Application
    Filed: December 27, 2018
    Publication date: July 11, 2019
    Applicant: COMPAL ELECTRONICS, INC.
    Inventors: I-Lung Chen, Yi-Hsuan Wu, Wang-Hung Yeh, Yi-Chang Wu, Yu-Fan Chuang, Yu-Wei Lai