Abstract: A semiconductor device includes a carrier, a substrate, light-sensing devices and a bonding layer. The substrate overlies the carrier, and has a first surface and a second surface opposite to the first surface. The substrate includes inverted pyramid recesses in the second surface. The light-sensing devices are disposed on the first surface of the substrate. The bonding layer is disposed between the substrate and the carrier.

Abstract: A semiconductor device includes a substrate, a semiconductor layer, light-sensing devices, a transparent dielectric layer and a grid shielding layer. The semiconductor layer overlies the substrate, and has a first surface and a second surface opposite to the first surface. The semiconductor layer includes microstructures disposed on the second surface of the semiconductor layer. The light-sensing devices are disposed on the first surface of the semiconductor layer. The transparent dielectric layer is disposed on the second surface of the semiconductor layer, and covers the microstructures. The grid shielding layer extends from the first surface of the semiconductor layer toward the second surface of the semiconductor layer, and surrounds each of the light-sensing devices to separate the light-sensing devices from each other, in which a depth of the grid shielding layer is greater than two-thirds of a thickness of the semiconductor layer.

Abstract: A semiconductor device includes a substrate, a semiconductor layer, light-sensing devices, a transparent dielectric layer and a grid shielding layer. The semiconductor layer overlies the substrate, and has a first surface and a second surface opposite to the first surface. The semiconductor layer includes microstructures disposed on the second surface of the semiconductor layer. The light-sensing devices are disposed on the first surface of the semiconductor layer. The transparent dielectric layer is disposed on the second surface of the semiconductor layer, and covers the microstructures. The grid shielding layer extends from the first surface of the semiconductor layer toward the second surface of the semiconductor layer, and surrounds each of the light-sensing devices to separate the light-sensing devices from each other, in which a depth of the grid shielding layer is greater than two-thirds of a thickness of the semiconductor layer.

Abstract: A semiconductor device includes a substrate, a semiconductor layer, light-sensing devices, a transparent dielectric layer and a grid shielding layer. The semiconductor layer overlies the substrate, and has a first surface and a second surface opposite to the first surface. The semiconductor layer includes microstructures disposed on the second surface of the semiconductor layer. The light-sensing devices are disposed on the first surface of the semiconductor layer. The transparent dielectric layer is disposed on the second surface of the semiconductor layer, and covers the microstructures. The grid shielding layer extends from the first surface of the semiconductor layer toward the second surface of the semiconductor layer, and surrounds each of the light-sensing devices to separate the light-sensing devices from each other, in which a depth of the grid shielding layer is greater than two-thirds of a thickness of the semiconductor layer.

Abstract: A semiconductor device includes an epitaxial layer including a first surface and a silicon layer disposed on the first surface and including a second surface opposite to the first surface, wherein the silicon layer includes a plurality of pillars on the second surface, a portion of the plurality of pillars on a predetermined portion of the second surface are in substantially same dimension, each of the plurality of pillars on the predetermined portion of the second surface stands substantially orthogonal to the second surface, the plurality of pillars are configured for absorbing an electromagnetic radiation of a predetermined wavelength projected from the epitaxial layer and generating an electrical energy in response to the absorption of the electromagnetic radiation.

Abstract: A method for forming an image-sensor device is provided. The method includes providing a first semiconductor substrate having a first surface and a second surface opposite to the first surface. The method includes forming a device layer over the first surface of the first semiconductor substrate. The method includes bonding the first semiconductor substrate to a second semiconductor substrate after the formation of the device layer. The second surface faces the second semiconductor substrate. The method includes forming a diffusion layer between the first semiconductor substrate and the second semiconductor substrate. The diffusion layer has a dopant concentration gradient that increases in a direction from the first semiconductor substrate toward the second semiconductor substrate.

Abstract: A semiconductor device includes a substrate, a semiconductor layer and a switching element. The semiconductor layer is disposed on the substrate. The semiconductor layer has a light-sensing portion and includes microstructures at a side face area corresponding to the light-sensing portion. The switching element is disposed on the semiconductor layer. In the semiconductor device, the switching element and the light-sensing portion are staggered.

Abstract: Embodiments of mechanisms for forming a metal-insulator-metal (MIM) capacitor structure are provided. The metal-insulator-metal capacitor structure includes a substrate. The MIM capacitor structure also includes a CBM layer formed on the substrate, and the CBM layer includes a bottom barrier layer, a main metal layer and a top barrier layer. The MIM capacitor structure further includes a first high-k dielectric layer formed on the CBM layer, an insulating layer formed on the first high-k dielectric layer and a second high-k dielectric layer formed on the insulating layer. The MIM capacitor structure also includes a CTM layer formed on the second high-k dielectric layer, and the CBM layer includes a bottom barrier layer, a main metal layer and a top barrier layer.

Abstract: A semiconductor device includes a carrier wafer, a device layer, a first semiconductor layer and a second semiconductor layer. The device layer is disposed on the carrier wafer. The first semiconductor layer is disposed on the device layer, and has a first side face and a second side face opposite to the first side face, in which the first side face is adjacent to the device layer. The second semiconductor layer is disposed on the first semiconductor layer, and has a third side face and a fourth side face opposite to the third side face, in which the fourth side face of the second semiconductor layer is adjacent to the second side face of the first semiconductor layer, and the second semiconductor layer is implanted and annealed.

Abstract: A semiconductor device includes a substrate, a semiconductor layer and a switching element. The semiconductor layer is disposed on the substrate. The semiconductor layer has a light-sensing portion and includes microstructures at a side face area corresponding to the light-sensing portion. The switching element is disposed on the semiconductor layer. In the semiconductor device, the switching element and the light-sensing portion are staggered.

Abstract: In a method for manufacturing a semiconductor device, a substrate including a gate structure is provided. A source region and a drain region are formed at opposing sides of the gate structure and an implant region for a resistor device is formed in the substrate. Pocket implant regions are formed in the source region and the drain region. A dielectric layer is formed to cover the gate structure and the substrate. A portion of dopants in the pocket implant regions interact with portions of dopants in the source region and the drain region to form lightly doped drain regions above the pocket implant regions. A resistor region of the resistor device is defined on the implant region. A portion of the dielectric layer is removed to form a spacer on a sidewall of the gate structure and a resistor protection dielectric layer on a portion of the implant region.

Abstract: An image-sensor device includes a first semiconductor substrate. The image-sensor device further includes a second semiconductor substrate under the first semiconductor substrate. The first semiconductor substrate has a first dopant concentration less than a second dopant concentration of the second semiconductor substrate. A ratio of a first resistance of the first semiconductor substrate to a second resistance of the second semiconductor substrate is larger than or equal to about 100. The image-sensor device also includes a diffusion layer positioned between the first semiconductor substrate and the second semiconductor substrate. A ratio of a first thickness of the diffusion layer to a second thickness of the first semiconductor substrate ranges from about 0.1 to about 1.

Abstract: A semiconductor device includes a substrate including a front side, a back side opposite to the front side, and a high absorption structure disposed over the back side of the substrate and configured to absorb an electromagnetic radiation in a predetermined wavelength; and a dielectric layer including a high dielectric constant (high k) dielectric material, wherein the dielectric layer is disposed on the high absorption structure.

Abstract: A semiconductor device is operated for sensing incident light and includes a substrate, a device layer, a semiconductor layer and a color filter layer. The device layer is disposed on the substrate and includes light-sensing regions. The semiconductor layer overlies the device layer and has a first surface and a second surface opposite to the first surface. The first surface is adjacent to the device layer. The semiconductor layer includes microstructures on the second surface. The color filter layer is disposed on the second surface of the semiconductor layer.

Abstract: An image-sensor device includes a first semiconductor substrate. The image-sensor device further includes a second semiconductor substrate under the first semiconductor substrate. The first semiconductor substrate has a first dopant concentration less than a second dopant concentration of the second semiconductor substrate. A ratio of a first resistance of the first semiconductor substrate to a second resistance of the second semiconductor substrate is larger than or equal to about 100. The image-sensor device also includes a diffusion layer positioned between the first semiconductor substrate and the second semiconductor substrate. A ratio of a first thickness of the diffusion layer to a second thickness of the first semiconductor substrate ranges from about 0.1 to about 1.

Abstract: A semiconductor device includes an epitaxial layer including a first surface and a silicon layer disposed on the first surface and including a second surface opposite to the first surface, wherein the silicon layer includes a plurality of pillars on the second surface, a portion of the plurality of pillars on a predetermined portion of the second surface are in substantially same dimension, each of the plurality of pillars on the predetermined portion of the second surface stands substantially orthogonal to the second surface, the plurality of pillars are configured for absorbing an electromagnetic radiation of a predetermined wavelength projected from the epitaxial layer and generating an electrical energy in response to the absorption of the electromagnetic radiation.

Abstract: Embodiments of mechanisms for forming a metal-insulator-metal (MIM) capacitor structure are provided. The metal-insulator-metal capacitor structure includes a substrate. The MIM capacitor structure also includes a CBM layer formed on the substrate, and the CBM layer includes a bottom barrier layer, a main metal layer and a top barrier layer. The MIM capacitor structure further includes a first high-k dielectric layer formed on the CBM layer, an insulating layer formed on the first high-k dielectric layer and a second high-k dielectric layer formed on the insulating layer. The MIM capacitor structure also includes a CTM layer formed on the second high-k dielectric layer, and the CBM layer includes a bottom barrier layer, a main metal layer and a top barrier layer.

Abstract: A plurality of metal layers includes a top metal layer. An Ultra-Thick Metal (UTM) layer is disposed over the top metal layer, wherein no additional metal layer is located between the UTM layer and the top metal layer. A Metal-Insulator-Metal (MIM) capacitor is disposed under the UTM layer and over the top metal layer.

Abstract: A plurality of metal layers includes a top metal layer. An Ultra-Thick Metal (UTM) layer is disposed over the top metal layer, wherein no additional metal layer is located between the UTM layer and the top metal layer. A Metal-Insulator-Metal (MIM) capacitor is disposed under the UTM layer and over the top metal layer.

Abstract: A plurality of metal layers includes a top metal layer. An Ultra-Thick Metal (UTM) layer is disposed over the top metal layer, wherein no additional metal layer is located between the UTM layer and the top metal layer. A Metal-Insulator-Metal (MIM) capacitor is disposed under the UTM layer and over the top metal layer.