Abstract: The present invention describes a method for image enlargement with the following steps. An image is divided into several sampling regions. A reference value of each sampling regions is determined. Then, the reference value is compared with a threshold for having a result. Finally, according to the result, at least one inserted pixel value is computed.

Abstract: A zoom lens system, in sequence from an object side to an image side, includes a first lens group having positive refractive power and fixed for gathering incoming light; a second lens group having negative refractive power for changing a focal length of the zoom lens system; a third lens group having positive refractive power and made stationary; a fourth lens group having positive refractive power and movable for compensating for a fluctuation of an image plane position; and a fifth lens group having positive refractive power and movable for focusing purpose. During zooming from a wide-angle end to a telephoto end, the second and fourth lens groups are moved independently toward the third lens group in such a manner that spacing between the first lens group and the second lens group increases and spacing between the third lens group and the fourth lens group decreases.

Abstract: A HDP CVD process for depositing a USG liner followed by a FSG dielectric layer on a metal line pattern is described. The substrate is heated in a chamber with a plasma comprised of Ar and O2. A USG liner is deposited in two steps wherein the first step is without an RF bias and the second step is with a moderate RF bias that does not damage the metal lines or an anti-reflective coating on the metal. The moderate RF bias is critical in forming a sputtering component that redeposits USG to form more uniform sidewalls and better coverage at top corners of metal lines. The USG deposition process has a good gap filling capability and significantly reduces device failure rate by preventing corrosion of metal lines during subsequent thermal process cycles. The method also includes a PECVD deposited FSG layer that is planarized to complete an IMD layer.

Abstract: A digital audio system has a register for storing data bits of digital audio signals, a multiplexer having a plurality of input ends connected to the register for selecting outputting data bits of the digital audio signals stored in the register, a shift controller connected to a selection end of the multiplexer for outputting corresponding bits according to the right-shifted number of bits of the data bits, and a digital to analog converter connected to an output end of the multiplexer for converting the digital audio signals into analog audio signals.

Abstract: A HDP CVD process for depositing a USG liner followed by a FSG dielectric layer on a metal line pattern is described. The substrate is heated in a chamber with a plasma comprised of Ar and O2. A USG liner is deposited in two steps wherein the first step is without an RF bias and the second step is with a moderate RF bias that does not damage the metal lines or an anti-reflective coating on the metal. The moderate RF bias is critical in forming a sputtering component that redeposits USG to form more uniform sidewalls and better coverage at top corners of metal lines. The USG deposition process has a good gap filling capability and significantly reduces device failure rate by preventing corrosion of metal lines during subsequent thermal process cycles. The method also includes a PECVD deposited FSG layer that is planarized to complete an IMD layer.