Abstract: A device and a method of forming the device is provided. The device includes a dielectric layer overlying a substrate, a conductive line with a sidewall in the dielectric layer, a Ta layer adjoining the sidewall of the conductive line, and a metal oxide formed between the Ta layer and the dielectric layer.

Abstract: A method for forming a dielectric film is disclosed. The method includes (a) exposing a substrate to a first gas pulse having a first oxygen-containing gas in a chamber; (b) exposing the substrate to multiple consecutive second gas pulses having a second oxygen-containing gas in the chamber, wherein the first oxygen-containing gas is different from the second oxygen-containing gas; and (c) sequentially after (a) and (b), exposing the substrate to a third gas pulse having a metal-containing gas in the chamber. Steps (a), (b), and (c) may be repeated any number of times to form the dielectric film with a predetermined thickness.

Abstract: An improved interconnect structure and a method for forming the interconnect structure is disclosed that allows the interconnect structure to achieve a lower Rc. To lower the Rc of the interconnect structure, an ?-phase inducing metal layer is introduced on a first Ta barrier layer of ? phase to induce the subsequent deposition of Ta thereon into the formation of an ?-phase Ta barrier layer. The subsequently deposited Ta barrier layer with a primary crystallographic structure of ? phase has a lower Rc than that of the ?-phase Ta barrier layer.

Abstract: A method of selecting a touch input source and an electronic device using the same are provided. The present method includes determining whether the electronic device detects an activating signal sent from a stylus. The method also includes defining the stylus as an input signal source of the electronic device when the activating signal is detected by the electronic device. The method further includes defining an electric conductive material and/or a finger as the input signal source of the electronic device when the activating signal is not detected.

Abstract: A mistouch identification method and a device using the same are provided for an electronic device having a touch panel. The method includes obtaining a first touch and a second touch detected successively by the touch panel, and determining whether a time interval between the first touch and the second touch detected by the touch panel does not exceed a predetermined value. The method also includes determining whether the second touch constitutes an invalid area according to an appearance of the second touch when the time interval does not exceed the predetermined value. The method further includes identifying whether the first touch is a mistouch according to a degree of overlap of the first touch and the invalid area when the second touch constitutes the invalid area.

Abstract: A structure for an integrated circuit with reduced contact resistance is disclosed. The structure includes a substrate, a cap layer deposited on the substrate, a dielectric layer deposited on the cap layer, and a trench embedded in the dielectric layer. The trench includes a TaN layer deposited on a side wall of the trench wherein the TaN layer has a greater concentration of nitrogen than tantalum, a Ta layer deposited on the TaN layer, and a Cu deposited on the Ta layer. The structure further includes a via integrated into the trench at bottom of the filled trench. In an embodiment, both the TaN layer and the Ta layer are formed with physical vapor deposition (PVD) wherein the TaN layer is formed with plasma sputtering a Ta target with an N2 flow at least 20 sccm. The structure offers low contact resistance (Rc) and tight Rc distribution.

Abstract: A device including a dielectric layer overlying a substrate, a conductive line with a sidewall in the dielectric layer, a Ta layer adjoining the sidewall of the conductive line, and a metal oxide formed between the Ta layer and the dielectric layer.

Abstract: A zoom lens includes a first lens group, a second lens group and a third lens group, all of which are arranged in sequence from an object side to an image side along an optical axis. The first lens group is with negative refractive power and includes a first lens, a second lens and a third lens, wherein the first lens is with negative refractive power, the second lens is with positive refractive power and the third lens is with negative refractive power. The second lens group is with positive refractive power. The third lens group is with positive refractive power. The third lens satisfies |R31/R32|?0.39, wherein R31 is a radius of curvature of an object side surface of the third lens and R32 is a radius of curvature of an image side surface of the third lens.

Abstract: An integrated circuit structure includes a semiconductor substrate and a dielectric layer over the semiconductor substrate. The integrated circuit structure further includes a conductive wiring in the dielectric layer. The integrated circuit structure also includes a first metallic capping layer over the conductive wiring and a second metallic capping layer over the first metallic capping layer. The second metallic capping layer has a width substantially the same as a width of the first metallic capping layer.

Abstract: An electronic device and a method for operating a touch panel of the electronic device are provided. The electronic device includes a touch panel, a driving unit and a processing unit. The driving unit is coupled to the touch panel, and drives the touch panel through a scanning frequency. The processing unit is coupled to the driving unit. When a peripheral component of the electronic device is enabled or connected to the electronic device, the processing unit looks up a working frequency table according to character information of the peripheral component, so as to obtain frequency information of the peripheral component, and determines whether or not to change the scanning frequency of the driving unit according to the frequency information of the peripheral component.

Abstract: A device including a dielectric layer overlying a substrate, a conductive line with a sidewall in the dielectric layer, a Ta layer adjoining the sidewall of the conductive line, and a metal oxide formed between the Ta layer and the dielectric layer.

Abstract: A method for forming a dielectric film is disclosed. The method includes (a) exposing a substrate to a first gas pulse having a first oxygen-containing gas in a chamber; (b) exposing the substrate to multiple consecutive second gas pulses having a second oxygen-containing gas in the chamber, wherein the first oxygen-containing gas is different from the second oxygen-containing gas; and (c) sequentially after (a) and (b), exposing the substrate to a third gas pulse having a metal-containing gas in the chamber. Steps (a), (b), and (c) may be repeated any number of times to form the dielectric film with a predetermined thickness.

Abstract: Structures and methods for reducing backside polysilicon peeling are disclosed. A structure includes a substrate having a first side and a second opposite side, a first dielectric layer on the second side of the substrate extending in a direction from an edge of the substrate towards a center of the substrate, a high-k layer on the first dielectric layer, and a polysilicon layer on the high-k layer. The first dielectric layer has a first innermost sidewall relative to the center of the substrate, and the high-k layer has a second innermost sidewall relative to the center of the substrate. The second innermost sidewall is within 2 millimeters from the first innermost sidewall in a direction parallel to the second side. The polysilicon layer extends towards the center of the substrate further than the first innermost sidewall.

Abstract: A method for forming an interconnect structure includes forming a dielectric layer overlying a substrate, forming a metal-containing layer in the dielectric layer, forming a barrier layer overlying the metal-containing layer, and performing a thermal process to form a metal oxide layer underlying the conductive layer. The metal oxide layer is a barrier layer formed at the boundary between the dielectric layer and the metal-containing layer.

Abstract: A zoom lens of the present invention includes a first lens group, a second lens group, an aperture, a third lens group, a fourth lens group, and an image surface in sequence along an optical axis from an object side to an image side. The first lens group has positive refractive power, and includes at least two lenses. The second lens group has negative refractive power, and includes three lenses. The third lens group has positive refractive power, and includes at least two lenses. The fourth lens group has positive refractive power. The zoom lens is switched to a telephoto mode from a wide-angle mode by moving the first lens group toward the object side, moving the second lens group toward the image side, and moving the third lens group toward the object side.

Abstract: A zoom lens includes a first lens group, a second lens group, an aperture, a third lens group, a fourth lens group, a fifth lens group, and an image surface in order along an optical axis from an object side to an image side. The first lens group has positive refractive power, and includes three lenses. The second lens group has negative refractive power, and includes fourth lenses. The third lens group has positive refractive power, and includes two lenses. The fourth lens group has positive refractive power, and includes five lenses. The fifth lens group has positive refractive power, and includes two lenses. Therefore, the zoom lens has a small size and high zoom ratio.

Abstract: An electronic device and a method for operating a touch panel of the electronic device are provided. The electronic device includes a touch panel, a driving unit and a processing unit. The driving unit is coupled to the touch panel, and drives the touch panel through a scanning frequency. The processing unit is coupled to the driving unit. When a peripheral component of the electronic device is enabled or connected to the electronic device, the processing unit looks up a working frequency table according to character information of the peripheral component, so as to obtain frequency information of the peripheral component, and determines whether or not to change the scanning frequency of the driving unit according to the frequency information of the peripheral component.

Abstract: A zoom lens includes a first lens group, a second lens group, an aperture, a third lens group, a fourth lens group, a fifth lens group, and an image surface in order along an optical axis from an object side to an image side. The first lens group has positive refractive power, and includes three lenses. The second lens group has negative refractive power, and includes fourth lenses. The third lens group has positive refractive power, and includes two lenses. The fourth lens group has positive refractive power, and includes five lenses. The fifth lens group has positive refractive power, and includes two lenses. Therefore, the zoom lens has a small size and high zoom ratio.

Abstract: When a mobile communication device receives a call notification or is used for making a phone call, it is determined whether a touch event occurs on a touch panel of the mobile communication device and whether the touch event matches an error condition. If the touch event matches the error condition, the mobile communication device is configured to operate in a power-saving mode.

Abstract: A method for electrochemical plating includes providing a wafer for an electrochemical plating (ECP) process, determining a wafer electrical property affecting the ECP process, adjusting a plating current or voltage applied in the ECP process based on the determined wafer electrical property, and electroplating the wafer with the adjusted plating current or voltage. A controller for controlling a power supply, and a system for electrochemical plating are also disclosed.