Abstract: An optical lens is provided. The optical lens includes, in order from an object side to an image-forming side, a first lens having negative refractive power, a second lens having negative refractive power, a third lens having refractive power and having an Abbe number Vd3, a cemented lens having refractive power, and a fourth lens having refractive power and having an Abbe number Vd4, wherein 15?Vd3 and/or Vd3?30, and 60?Vd4 and/or Vd4?85.

Abstract: A memory system with dynamic auto-repairing function and an operation method thereof is described herein. The memory system includes a memory and an automatic detection and repairing circuit. The automatic detection and repairing circuit is coupled to the memory. The automatic detection and repairing circuit includes a self-test unit and a repairing unit. The self-test unit is coupled to the memory. The repairing unit is coupled to the memory and the self-test unit respectively. When the memory system is operated in the initial state, the self-test unit instantly detects the defects in the memory and the repairing unit instantly repairs the defects in the memory. Then, the memory system enters into a working state from the initial state.

Abstract: A method of cleaning wafer-cleaning brushes includes passing a wafer having a first polished main side and an opposing unpolished backside between a pair of substantially cylindrical shaped wafer-cleaning brushes are rotated about an axial direction of the brushes while passing the wafer between the pair of wafer-cleaning brushes. A cleaning solution is applied to the brushes while passing the wafer between the pair of wafer-cleaning brushes. While passing between the pair of brushes, the first polished main side of the wafer faces a first direction, the first direction is an opposite direction to which a polished side of a production wafer faces during a subsequent polished wafer cleaning operation. The substantially cylindrical shaped wafer-cleaning brushes include a plurality of protrusions on an external surface of the brushes, and the brushes contact the wafer at least a portion of time the wafer is passing between the pair of brushes.

Abstract: A method includes forming a trench in a low-K dielectric layer, where the trench exposes an underlying contact area of a substrate. A first tantalum nitride (TaN) layer is conformally deposited within the trench, where the first TaN layer is deposited using atomic layer deposition (ALD) or chemical vapor deposition (CVD). A tantalum (Ta) layer is deposited on the first TaN layer conformally within the trench, where the Ta layer is deposited using physical vapor deposition (PVD). An electroplating process is performed to deposit a conductive layer over the Ta layer. A via is formed over the conductive layer, where forming the via includes depositing a second TaN layer within the via and in contact with the conductive layer.

Abstract: A fingerprint authentication method and an electronic device are provided. The fingerprint authentication method includes: performing a fingerprint enrollment operation through a fingerprint sensor and storing enrolled fingerprint information to a storage circuit; sensing to-be-authenticated fingerprint information through the fingerprint sensor in a fingerprint authentication operation; and performing a default function corresponding to an authentication success of the fingerprint authentication operation and updating the enrolled fingerprint information according to authenticated fingerprint information if a similarity between the to-be-authenticated fingerprint information and the enrolled fingerprint information conforms to a default condition.

Abstract: An optical lens comprises in order from an object side to an image-forming side, a first lens group having positive refractive power and a second lens group having negative refractive power. The second lens group comprises a third lens and a fourth lens. The optical lens satisfies at least one of the following conditions: a thickness of the first lens group is less than a first distance between the first lens group and the second lens group, and |?7/D4|?2. The second distance is between a projected position which an effective diameter of an object-side surface of the fourth lens projected on an optical axis and a first intersection point which the object-side surface of the fourth lens and the optical axis is ?7, and a thickness of the fourth lens is D4.

Abstract: A device comprises a semiconductor substrate; a dielectric layer deposited over the semiconductor substrate, the dielectric layer including a trench; and a structure in the trench. The structure includes a chemical vapor deposition (CVD) TaN layer formed on a side wall of the trench; a physical vapor deposition (PVD) Ta layer formed over the CVD TaN layer; and a metal-containing layer formed over the PVD Ta layer.

Abstract: This present invention provides an optical lens, which includes, in order from an object side to an image-forming side, a first lens group having positive refraction power and a second lens group having negative refraction power. The first lens group comprises a first lens, a second lens, and a third lens. The second lens group comprises a fourth lens, a fifth lens, and a sixth lens. The first lens is a plastic lens, the fourth lens is a convex-concave lens, and the sixth lens is an aspheric lens.

Abstract: A device comprises a semiconductor substrate; a dielectric layer deposited over the semiconductor substrate, the dielectric layer including a trench; and a structure in the trench. The structure includes a chemical vapor deposition (CVD) TaN layer formed on a side wall of the trench; a physical vapor deposition (PVD) Ta layer formed over the CVD TaN layer; and a metal-containing layer formed over the PVD Ta layer.

Abstract: An optical lens comprises in order from an object side to an image-forming side, a first lens group having positive refractive power and a second lens group having negative refractive power. The second lens group comprises a third lens and a fourth lens. The optical lens satisfies at least one of the following conditions: a thickness of the first lens group is less than a first distance between the first lens group and the second lens group, and |?7/D4|?2. The second distance is between a projected position which an effective diameter of an object-side surface of the fourth lens projected on an optical axis and a first intersection point which the object-side surface of the fourth lens and the optical axis is ?7, and a thickness of the fourth lens is D4.

Abstract: A method for forming an interconnect structure includes forming a dielectric layer overlying a substrate, forming an opening in the dielectric layer, forming a metal-containing layer overlying the opening in the dielectric layer, forming a conformal protective layer overlying the metal-containing layer, filling a conductive layer in the opening, and performing a thermal process to form a metal oxide layer barrier layer underlying the metal-containing layer.

Abstract: An optical lens is provided. The optical lens having an optical axis comprises, in order from an object side to an image-forming side, a first lens having negative refraction power, a second lens having positive refraction power, a third lens having positive refraction power, a fourth lens having negative refraction power, a fifth lens having positive refraction power, and a sixth lens having refraction power. The sixth lens has an inflection point on a surface toward the image-forming side, the inflection point is separated from an optical axis by a distance h13, the radius of the sixth lens is H3, and |h13/H13|?0.55.

Abstract: A method for forming an interconnect structure includes forming a dielectric layer overlying a substrate, forming an opening in the dielectric layer, forming a metal-containing layer overlying the opening in the dielectric layer, forming a conformal protective layer overlying the metal-containing layer, filling a conductive layer in the opening, and performing a thermal process to form a metal oxide layer barrier layer underlying the metal-containing layer.

Abstract: An improved interconnect structure and a method for forming the interconnect structure is disclosed that allows the interconnect structure to achieve a lower Rc. To lower the Rc of the interconnect structure, an ?-phase inducing metal layer is introduced on a first Ta barrier layer of ? phase to induce the subsequent deposition of Ta thereon into the formation of an ?-phase Ta barrier layer. The subsequently deposited Ta barrier layer with a primary crystallographic structure of ? phase has a lower Rc than that of the ?-phase Ta barrier layer.

Abstract: A memory apparatus including memory modules, a command input module, a power supply module and a data access module is disclosed. Each memory module includes a memory bank including memory units. The command input module receives a non-random access command and generates a corresponding switch control signal according to the non-random access command. The power supply module is coupled to the command input module and the memory modules. The data access module is coupled to the command input module and the memory modules. At a first time, the power supply module selectively provides power only to a first memory module of the memory modules according to the switch control signal and the data access module will perform data access on the first memory module.

Abstract: A method of fabricating an integrated circuit includes depositing a cap layer on a substrate; depositing a dielectric layer on the cap layer; and forming a trench in the dielectric layer. The method further includes depositing a tantalum nitride (TaN) layer on a sidewall of the trench such that the TaN layer has a greater concentration of nitrogen than tantalum. The method further includes depositing a tantalum (Ta) layer on the TaN layer using physical vapor deposition (PVD); and depositing a metal layer over the Ta layer.

Abstract: An optical lens includes seven lenses. An first lens has a negative refractive power: an second lens, an third lens, an fifth lens, an sixth lens and an seventh lens have refractive powers respectively, and the fourth lens has a positive refractive power. One of the second lens and the third lens has a positive refractive power, and the other has a negative refractive power. One of the fifth lens and the sixth lens has a positive refractive power and the other has a negative refractive power. An object-side surface of the first lens has a refractive rate R1, an image-side surface of the first lens has a refractive rate R2, and |R2/R1|?0.01.

Abstract: An optical lens is provided. The optical lens includes, in order from an object side to an image-forming side, a first lens having negative refractive power, a second lens having negative refractive power, a third lens having refractive power and having an Abbe number Vd3, a cemented lens having refractive power, and a fourth lens having refractive power and having an Abbe number Vd4, wherein 15?Vd3 and/or Vd3?30, and 60?Vd4 and/or Vd4?85.

Abstract: A method includes applying a first amount of heat to a vapor region of a precursor canister, measuring an indication of saturated vapor pressure within the vapor region during the applying the first amount of heat, and applying a second amount of heat to the vapor region of the precursor canister, the second amount of heat being adjusted from the first amount of heat based on the indication of saturated vapor pressure.

Abstract: Methods for use in electrochemical plating processes are described herein. An exemplary method includes determining a wafer electrical property associated with a wafer, wherein the wafer electrical property affects the wafer during an electrochemical plating (ECP) process; adjusting a process parameter to be applied to the wafer during the ECP process based on the determined wafer electrical property, wherein the process parameter specifies at least one of a current or a voltage; and applying the adjusted process parameter to the wafer undergoing the ECP process. In some implementations, the process parameter is adjusted, such that a peak entry current of the ECP process substantially matches a plating current of the ECP process induced following the peak entry current.