Patents by Inventor Yu-Ming Hsu
Yu-Ming Hsu has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 11961769Abstract: A method of forming an integrated circuit, including forming a n-type doped well (N-well) and a p-type doped well (P-well) disposed side by side on a semiconductor substrate, forming a first fin active region extruded from the N-well and a second fin active region extruded from the P-well, forming a first isolation feature inserted between and vertically extending through the N-well and the P-well, and forming a second isolation feature over the N-well and the P-well and laterally contacting the first and the second fin active regions.Type: GrantFiled: November 7, 2022Date of Patent: April 16, 2024Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTDInventors: Kuo-Hsiu Hsu, Yu-Kuan Lin, Feng-Ming Chang, Hsin-Wen Su, Lien Jung Hung, Ping-Wei Wang
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Patent number: 11955519Abstract: A semiconductor device includes an epitaxial substrate. The epitaxial substrate includes a substrate. A strain relaxed layer covers and contacts the substrate. A III-V compound stacked layer covers and contacts the strain relaxed layer. The III-V compound stacked layer is a multilayer epitaxial structure formed by aluminum nitride, aluminum gallium nitride or a combination of aluminum nitride and aluminum gallium nitride.Type: GrantFiled: April 17, 2023Date of Patent: April 9, 2024Assignee: UNITED MICROELECTRONICS CORP.Inventors: Yu-Ming Hsu, Yu-Chi Wang, Yen-Hsing Chen, Tsung-Mu Yang, Yu-Ren Wang
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Patent number: 11924444Abstract: Method and apparatus for constrained de-blocking filter are disclosed. One method receives input data related to a current block in a current picture at a video encoder side or a video bitstream corresponding to compressed data including the current block in the current picture at a video decoder side, and determines a first boundary associated with the current block, wherein the first boundary corresponds to one vertical boundary or one horizontal boundary of the current block. The method then applies de-blocking process to a reconstructed current block corresponding to the current block to result in a filtered-reconstructed current block, using a plurality of first reference samples at a same side of the first boundary, and replaces a first set of the first reference samples by one or more padding values. The method then generates a filtered decoded picture including the filtered-reconstructed current block.Type: GrantFiled: April 11, 2022Date of Patent: March 5, 2024Assignee: HFI INNOVATION INC.Inventors: Chia-Ming Tsai, Chih-Wei Hsu, Ching-Yeh Chen, Tzu-Der Chuang, Yu-Wen Huang
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Publication number: 20240072432Abstract: An ultra-wideband antenna device is disposed on a casing of an electronic device. The ultra-wideband antenna device includes radio frequency terminals, a first antenna module, a second antenna module, and a switch module. The radio frequency terminals, the first antenna module and the switch module are located in the casing. The first antenna module is located on a metal frame of the casing, and the first antenna module includes a first antenna. The second antenna module includes a second antenna, a third antenna, and a fourth antenna. The switch module is connected between the radio frequency terminals and the first antenna module. When the switch module turns on one of the radio frequency terminals and the first antenna for distance measurement, the switch module selectively turns on at least one of the second antenna, the third antenna, or the fourth antenna.Type: ApplicationFiled: March 28, 2023Publication date: February 29, 2024Inventors: Yu-Ching WU, Chien-Ming HSU
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Publication number: 20240030155Abstract: The present invention provides a wafer level chip scale package (WLCSP) unit; the WLCSP unit includes a die, a dielectric layer, and a bottom metal layer; the die has a substrate and an active surface; multiple pads are mounted on the active surface, and a soldering layer is mounted on a surface of each of the pads; the dielectric layer covers an upper part of four lateral surfaces of the die, exposing a lower part of the four lateral surfaces of the die; the bottom metal layer is mounted on a bottom surface of the substrate; the bottom metal layer protects a bottom surface of the dies, dissipates heat generated by the dies, and also protects the dies from external electromagnetic interferences (EMI).Type: ApplicationFiled: August 10, 2022Publication date: January 25, 2024Applicant: PANJIT INTERNATIONAL INC.Inventors: Chung-Hsiung HO, Chi-Hsueh LI, Yu-Ming HSU, Yung-Hui WANG, Chia-Wei CHEN
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Patent number: 11821928Abstract: A charging apparatus includes a first terminal, a second terminal, a switch unit, a control unit, and a communication unit. The switch unit is turned on or turned off to control whether the first terminal is coupled to the second terminal. The control unit sets a first time from the switch unit receiving a control signal to the switch unit actually being turned on or turned off. The control unit and the electric vehicle mutually transmit a communication signal through the communication unit. The control unit calculates a second time when the current reaches to a zero point based on an abnormal state indicated by the communication signal, and calculates a third time when the switch unit operates at the zero point based on the first time and the second time, and provides the control signal to turn off the switch unit at the third time.Type: GrantFiled: June 22, 2022Date of Patent: November 21, 2023Assignee: DELTA ELECTRONICS INC.Inventors: Bo-Song Lin, Yu-Ming Hsu
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Publication number: 20230268397Abstract: A semiconductor device includes an epitaxial substrate. The epitaxial substrate includes a substrate. A strain relaxed layer covers and contacts the substrate. A III-V compound stacked layer covers and contacts the strain relaxed layer. The III-V compound stacked layer is a multilayer epitaxial structure formed by aluminum nitride, aluminum gallium nitride or a combination of aluminum nitride and aluminum gallium nitride.Type: ApplicationFiled: April 17, 2023Publication date: August 24, 2023Applicant: UNITED MICROELECTRONICS CORP.Inventors: Yu-Ming Hsu, Yu-Chi Wang, Yen-Hsing Chen, Tsung-Mu Yang, Yu-Ren Wang
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Publication number: 20230253457Abstract: A semiconductor device includes an epitaxial substrate. The epitaxial substrate includes a substrate. A strain relaxed layer covers and contacts the substrate. A III-V compound stacked layer covers and contacts the strain relaxed layer. The III-V compound stacked layer is a multilayer epitaxial structure formed by aluminum nitride, aluminum gallium nitride or a combination of aluminum nitride and aluminum gallium nitride.Type: ApplicationFiled: April 17, 2023Publication date: August 10, 2023Applicant: UNITED MICROELECTRONICS CORP.Inventors: Yu-Ming Hsu, Yu-Chi Wang, Yen-Hsing Chen, Tsung-Mu Yang, Yu-Ren Wang
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Publication number: 20230236227Abstract: A charging apparatus includes a first terminal, a second terminal, a switch unit, a control unit, and a communication unit. The switch unit is turned on or turned off to control whether the first terminal is coupled to the second terminal. The control unit sets a first time from the switch unit receiving a control signal to the switch unit actually being turned on or turned off. The control unit and the electric vehicle mutually transmit a communication signal through the communication unit. The control unit calculates a second time when the current reaches to a zero point based on an abnormal state indicated by the communication signal, and calculates a third time when the switch unit operates at the zero point based on the first time and the second time, and provides the control signal to turn off the switch unit at the third time.Type: ApplicationFiled: June 22, 2022Publication date: July 27, 2023Inventors: Bo-Song LIN, Yu-Ming HSU
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Patent number: 11695067Abstract: A high-electron mobility transistor includes a substrate; a channel layer on the substrate; a AlGaN layer on the channel layer; and a P—GaN gate on the AlGaN layer. The AlGaN layer comprises a first region and a second region. The first region has a composition that is different from that of the second region.Type: GrantFiled: September 21, 2022Date of Patent: July 4, 2023Assignee: UNITED MICROELECTRONICS CORP.Inventors: Yen-Hsing Chen, Yu-Ming Hsu, Tsung-Mu Yang, Yu-Ren Wang
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Patent number: 11664426Abstract: A semiconductor device includes an epitaxial substrate. The epitaxial substrate includes a substrate. A strain relaxed layer covers and contacts the substrate. A III-V compound stacked layer covers and contacts the strain relaxed layer. The III-V compound stacked layer is a multilayer epitaxial structure formed by aluminum nitride, aluminum gallium nitride or a combination of aluminum nitride and aluminum gallium nitride.Type: GrantFiled: March 3, 2022Date of Patent: May 30, 2023Assignee: UNITED MICROELECTRONICS CORP.Inventors: Yu-Ming Hsu, Yu-Chi Wang, Yen-Hsing Chen, Tsung-Mu Yang, Yu-Ren Wang
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Patent number: 11616135Abstract: A high electron mobility transistor (HEMT) includes a substrate, a P-type III-V composition layer, a gate electrode and a carbon containing layer. The P-type III-V composition layer is disposed on the substrate, and the gate electrode is disposed on the P-type III-V composition layer. The carbon containing layer is disposed under the P-type III-V composition layer to function like an out diffusion barrier for preventing from the dopant within the P-type III-V composition layer diffusing into the stacked layers underneath during the annealing process.Type: GrantFiled: April 8, 2020Date of Patent: March 28, 2023Assignee: UNITED MICROELECTRONICS CORP.Inventors: Yu-Ming Hsu, Yen-Hsing Chen, Tsung-Mu Yang, Yu-Ren Wang
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Patent number: 11563088Abstract: A semiconductor device includes an epitaxial substrate. The epitaxial substrate includes a substrate. A strain relaxed layer covers and contacts the substrate. A III-V compound stacked layer covers and contacts the strain relaxed layer. The III-V compound stacked layer is a multilayer epitaxial structure formed by aluminum nitride, aluminum gallium nitride or a combination of aluminum nitride and aluminum gallium nitride.Type: GrantFiled: December 10, 2019Date of Patent: January 24, 2023Assignee: UNITED MICROELECTRONICS CORP.Inventors: Yu-Ming Hsu, Yu-Chi Wang, Yen-Hsing Chen, Tsung-Mu Yang, Yu-Ren Wang
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Publication number: 20230020271Abstract: A high-electron mobility transistor includes a substrate; a channel layer on the substrate; a AlGaN layer on the channel layer; and a P—GaN gate on the AlGaN layer. The AlGaN layer comprises a first region and a second region. The first region has a composition that is different from that of the second region.Type: ApplicationFiled: September 21, 2022Publication date: January 19, 2023Applicant: UNITED MICROELECTRONICS CORP.Inventors: Yen-Hsing Chen, Yu-Ming Hsu, Tsung-Mu Yang, Yu-Ren Wang
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Patent number: 11557666Abstract: A high-electron mobility transistor includes a substrate; a channel layer on the substrate; a AlGaN layer on the channel layer; and a P—GaN gate on the AlGaN layer. The AlGaN layer comprises a first region and a second region. The first region has a composition that is different from that of the second region.Type: GrantFiled: November 22, 2020Date of Patent: January 17, 2023Assignee: UNITED MICROELECTRONICS CORP.Inventors: Yen-Hsing Chen, Yu-Ming Hsu, Tsung-Mu Yang, Yu-Ren Wang
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Publication number: 20220416068Abstract: A high electron mobility transistor (HEMT) includes a substrate, a P-type III-V composition layer, a gate electrode and a carbon containing layer. The P-type III-V composition layer is disposed on the substrate, and the gate electrode is disposed on the P-type III-V composition layer. The carbon containing layer is disposed under the P-type III-V composition layer to function like an out diffusion barrier for preventing from the dopant within the P-type III-V composition layer diffusing into the stacked layers underneath during the annealing process.Type: ApplicationFiled: August 29, 2022Publication date: December 29, 2022Applicant: UNITED MICROELECTRONICS CORP.Inventors: Yu-Ming Hsu, Yen-Hsing Chen, Tsung-Mu Yang, Yu-Ren Wang
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Patent number: 11508818Abstract: A semiconductor device includes an epitaxial substrate. The epitaxial substrate includes a substrate. A strain relaxed layer covers and contacts the substrate. A III-V compound stacked layer covers and contacts the strain relaxed layer. The III-V compound stacked layer is a multilayer epitaxial structure formed by aluminum nitride, aluminum gallium nitride or a combination of aluminum nitride and aluminum gallium nitride.Type: GrantFiled: October 21, 2021Date of Patent: November 22, 2022Assignee: UNITED MICROELECTRONICS CORP.Inventors: Yu-Ming Hsu, Yu-Chi Wang, Yen-Hsing Chen, Tsung-Mu Yang, Yu-Ren Wang
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Publication number: 20220344474Abstract: A superlattice structure includes a substrate. A first superlattice stack is disposed on the substrate. The first superlattice stack includes a first superlattice layer, a second superlattice layer and a third superlattice layer disposed from bottom to top. Three stress relaxation layers respectively disposed between the first superlattice layer and the second superlattice layer, the second superlattice layer and the third superlattice layer and on the third superlattice layer. Each of the stress relaxation layers includes a group III-V compound layer. The thickness of each of the stress relaxation layers should be greater than a relaxation critical thickness.Type: ApplicationFiled: May 31, 2021Publication date: October 27, 2022Inventors: Yu-Ming Hsu, Chun-Liang Kuo, Yen-Hsing Chen, Tsung-Mu Yang, Yu-Ren Wang
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Publication number: 20220320292Abstract: A semiconductor device includes an epitaxial substrate. The epitaxial substrate includes a substrate. A strain relaxed layer covers and contacts the substrate. A III-V compound stacked layer covers and contacts the strain relaxed layer. The III-V compound stacked layer is a multilayer epitaxial structure formed by aluminum nitride, aluminum gallium nitride or a combination of aluminum nitride and aluminum gallium nitride.Type: ApplicationFiled: February 28, 2022Publication date: October 6, 2022Applicant: UNITED MICROELECTRONICS CORP.Inventors: Yu-Ming Hsu, Yu-Chi Wang, Yen-Hsing Chen, Tsung-Mu Yang, Yu-Ren Wang
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Publication number: 20220310794Abstract: A semiconductor device includes an epitaxial substrate. The epitaxial substrate includes a substrate. A strain relaxed layer covers and contacts the substrate. A III-V compound stacked layer covers and contacts the strain relaxed layer. The III-V compound stacked layer is a multilayer epitaxial structure formed by aluminum nitride, aluminum gallium nitride or a combination of aluminum nitride and aluminum gallium nitride.Type: ApplicationFiled: March 3, 2022Publication date: September 29, 2022Applicant: UNITED MICROELECTRONICS CORP.Inventors: Yu-Ming Hsu, Yu-Chi Wang, Yen-Hsing Chen, Tsung-Mu Yang, Yu-Ren Wang