Abstract: A transparent film heater is provided, including a transparent conductive film, at least two main electrodes and at least four multiple electrodes. The transparent conductive film is disposed on a transparent substrate. At least two main electrodes are arranged on two sides of the transparent conductive film along an edge of the transparent conductive film. The at least four multiple electrodes are composed of a first pair of multiple electrodes and a second pair of multiple electrodes, and are arranged on the transparent conductive film. A first spacing region and a second spacing region are respectively located between adjacent end points of the two main electrodes along the edge of the transparent conductive film. The first pair of multiple electrodes are arranged in the first spacing region, and the second pair of multiple electrodes are arranged in the second spacing region.

Abstract: Provided is a failure mode analysis method for a memory device including the following steps. A wafer is scanned by a test system to generate a failure pattern of the wafer, and a failure count of a single-bit in the wafer is obtained by a test program. A single-bit grouping table is defined according to a word-line layout, a bit-line layout, and an active area layout. A core group and a gap group are formed through grouping in at least one process in a self-aligned double patterning process. Failure counts of single-bits in the core group and the gap group are respectively counted to generate core failure data and gap failure data.

Abstract: Methods, computer program products, and/or systems are provided that can perform the following operations: receiving a connection request from a first user device; creating an authentication container for the first user device; authenticating the first user device using the authentication container; in response to authentication for the first user device being successful, creating a first user request processing container for the first user device; and processing user requests received from the first user device using the first user request processing container.

Abstract: Provided is a failure mode analysis method for a memory device including the following steps. A wafer is scanned by a test system to generate a failure pattern of the wafer, and a failure count of a single-bit in the wafer is obtained by a test program. A single-bit grouping table is defined according to a word-line layout, a bit-line layout, and an active area layout. A core group and a gap group are formed through grouping in at least one process in a self-aligned double patterning process. Failure counts of single-bits in the core group and the gap group are respectively counted to generate core failure data and gap failure data.

Abstract: A method, computer program product and system are provided for preloading debug information based on the presence of incremental source code files. Based on parsed input parameters to a source code debugger, a source code repository and a local storage area are searched for an incremental file. In response to the incremental file being located, a preload indicator in the incremental file, which is a source code file, is set. Based on the preload indicator being set, debug symbol data from the incremental file is merged to a preload symbol list. In response to receiving a command to examine the debug symbol data from the incremental file, the preload symbol list is searched for the requested debug symbol data.

Abstract: An example operation may include one or more of connecting, by a service discovery node, to a blockchain configured to store workloads and stakes of a plurality of endorser nodes, receiving, by the service discovery node, a discovery query that contains an endorsement policy from a user node, generating, by the service discovery node, cryptographic sortition parameters based on the endorsement policy, sending, by the service discovery node, the cryptographic sortition parameters to the plurality of the endorser nodes, collecting, by the service discovery node, sortition labels from the plurality of the endorser nodes, the sortition labels generated based on the sortition parameters, determining, based on the sortition labels, a set of the endorser nodes from the plurality of the endorser nodes that qualify the endorsement policy, and providing, by the service discovery node, identifiers of the set of the endorser nodes to the user node for an endorsement of a user transaction proposal.

Abstract: A micro-electromechanical-system (MEMS) device may be formed to include an anti-stiction polysilicon layer on one or more moveable MEMS structures of a device wafer of the MEMS device to reduce, minimize, and/or eliminate stiction between the moveable MEMS structures and other components or structures of the MEMS device. The anti-stiction polysilicon layer may be formed such that a surface roughness of the anti-stiction polysilicon layer is greater than the surface roughness of a bonding polysilicon layer on the surfaces of the device wafer that are to be bonded to a circuitry wafer of the MEMS device. The higher surface roughness of the anti-stiction polysilicon layer may reduce the surface area of the bottom of the moveable MEMS structures, which may reduce the likelihood that the one or more moveable MEMS structures will become stuck to the other components or structures.

Abstract: Methods, computer program products, and/or systems are provided that can perform the following operations: receiving a connection request from a first user device; creating an authentication container for the first user device; authenticating the first user device using the authentication container; in response to authentication for the first user device being successful, creating a first user request processing container for the first user device; and processing user requests received from the first user device using the first user request processing container.

Abstract: The present invention provides a human CD16+ natural killer cell line. This human CD16+ natural killer cell line does not include synthetic, genetically modified or deliberately delivered polynucleotide encoding the CD16 receptor and is a non-tumorigenic cell line. Therefore, this human CD16+ natural killer cell line might provide considerable long-term safety for disease treatment.

Abstract: A method for increasing the yield of microalgae and the yield of a product produced by the microalgae is provided. The method includes performing a change procedure on CAM1 gene and/or calmodulin 1 encoded by the CAM1 gene in a microalga, such that a change occurs in a nucleotide and/or the nucleotide sequence of the CAM1 gene and/or an amino acid and/or the amino acid sequence of the calmodulin 1 encoded by the CAM1 gene in the microalga to obtain an altered microalga. The altered microalga has an altered CAM1 gene and/or an altered calmodulin 1. The altered microalga has a higher growth rate and a higher product production rate and/or yield than an unaltered microalga.

Abstract: A method of fabricating a semiconductor structure including the following steps is provided. A mask layer is formed on a semiconductor substrate. The semiconductor substrate revealed by the mask layer is anisotropically etched until a cavity is formed in the semiconductor substrate, wherein anisotropically etching the semiconductor substrate revealed by the mask layer comprises performing a plurality of first cycles and performing a plurality of second cycles after performing the first cycles, each cycle among the first and second cycles respectively includes performing a passivating step and performing an etching step after performing the passivating step. During the first cycles, a first duration ratio of the etching step to the passivating step is variable and ramps up step by step. During the second cycles, a second duration ratio of the etching step to the passivating step is constant, and the first duration ratio is less than the second duration ratio.

Abstract: A multi-zone gas distribution plate (GDP) for high uniformity in plasma-based etching is provided. A housing defines a process chamber and comprises a gas inlet configured to receive a process gas. A GDP is arranged in the process chamber and is configured to distribute the process gas within the process chamber. The GDP comprises a plurality of holes extending through the GDP, and further comprises a plurality of zones into which the holes are grouped. The zones comprise a first zone and a second zone. Holes of the first zone share a first cross-sectional profile and holes of the second zone share a second cross-sectional profile different than the first cross-sectional profile. A method for designing the multi-zone GDP is also provided.

Abstract: An example operation may include one or more of connecting, by a service discovery node, to a blockchain configured to store workloads and stakes of a plurality of endorser nodes, receiving, by the service discovery node, a discovery query that contains an endorsement policy from a user node, generating, by the service discovery node, cryptographic sortition parameters based on the endorsement policy, sending, by the service discovery node, the cryptographic sortition parameters to the plurality of the endorser nodes, collecting, by the service discovery node, sortition labels from the plurality of the endorser nodes, the sortition labels generated based on the sortition parameters, determining, based on the sortition labels, a set of the endorser nodes from the plurality of the endorser nodes that qualify the endorsement policy, and providing, by the service discovery node, identifiers of the set of the endorser nodes to the user node for an endorsement of a user transaction proposal.

Abstract: Methods for manufacturing MEMS structures are provided. The method for manufacturing a microelectromechanical system (MEMS) structure includes etching a MEMS substrate to form a first trench and a second trench and etching the MEMS substrate through the first trench and the second trench to form a first through hole and an extended second trench. The method for manufacturing a MEMS structure further includes etching the MEMS substrate through the extended second trench to form a second through hole. In addition, a height of the first trench is greater than ¾ of a height of the MEMS substrate, and a height of the second trench is smaller than ? of the height of the MEMS substrate.

Abstract: A method of fabricating a semiconductor structure including the following steps is provided. A mask layer is formed on a semiconductor substrate. The semiconductor substrate revealed by the mask layer is anisotropically etched until a cavity is formed in the semiconductor substrate, wherein anisotropically etching the semiconductor substrate revealed by the mask layer comprises performing a plurality of first cycles and performing a plurality of second cycles after performing the first cycles, each cycle among the first and second cycles respectively includes performing a passivating step and performing an etching step after performing the passivating step. During the first cycles, a first duration ratio of the etching step to the passivating step is variable and ramps up step by step. During the second cycles, a second duration ratio of the etching step to the passivating step is constant, and the first duration ratio is less than the second duration ratio.

Abstract: Devices and methods for controlling wafer uniformity using a gas baffle plate are disclosed. In one example, a device for plasma-based processes is disclosed. The device includes: a housing defining a process chamber and a baffle plate arranged above a wafer in the process chamber. The baffle plate is configured to control plasma distribution on the wafer. The baffle plate has a shape of an annulus that comprises a first annulus sector and a second annulus sector. The first annulus sector has a first inner radius. The second annulus sector has a second inner radius that is different from the first inner radius.

Abstract: Devices and methods for controlling wafer uniformity in plasma-based process is disclosed. In one example, a device for plasma-based processes is disclosed. The device includes: a housing defining a process chamber and a gas distribution plate (GDP) arranged in the process chamber. The housing comprises: a gas inlet configured to receive a process gas, and a gas outlet configured to expel processed gas. The GDP is configured to distribute the process gas within the process chamber. The GDP has a plurality of holes evenly distributed thereon. The GDP comprises a first zone and a second zone. The first zone is closer to the gas outlet than the second zone. At least one hole in the first zone is closed.

Abstract: A method of fabricating a semiconductor structure including the following steps is provided. A mask layer is formed on a semiconductor substrate. The semiconductor substrate revealed by the mask layer is anisotropically etched until a cavity is formed in the semiconductor substrate, wherein anisotropically etching the semiconductor substrate revealed by the mask layer comprises performing a plurality of first cycles and performing a plurality of second cycles after performing the first cycles, each cycle among the first and second cycles respectively includes performing a passivating step and performing an etching step after performing the passivating step. During the first cycles, a first duration ratio of the etching step to the passivating step is variable and ramps up step by step. During the second cycles, a second duration ratio of the etching step to the passivating step is constant, and the first duration ratio is less than the second duration ratio.

Abstract: A cyclone filtering device includes first and second filters. The first filter includes a first filtering tube defining a first turbulence room, and has a coupling cover communicated with the first turbulence room and disposed for allowing passage of fluid, and a barrel seat defining a dust collecting room that is communicated with the first turbulence room. The second filter includes a second filtering tube defining a second turbulence room that is communicated with the first turbulence room, two end covers having an end opening that is communicated with the second turbulence room, and a capture member disposed in the second turbulence room and disposed for capturing substances that are entrained in the fluid.

Abstract: Methods for manufacturing MEMS structures are provided. The method for manufacturing a microelectromechanical system (MEMS) structure includes etching a MEMS substrate to form a first trench and a second trench and etching the MEMS substrate through the first trench and the second trench to form a first through hole and an extended second trench. The method for manufacturing a MEMS structure further includes etching the MEMS substrate through the extended second trench to form a second through hole. In addition, a height of the first trench is greater than ¾ of a height of the MEMS substrate, and a height of the second trench is smaller than ? of the height of the MEMS substrate.