Abstract: A conductive bump structure for a semiconductor device and a method for fabricating the same are provided. A metal bump is formed on an under bump metallurgy (UBM) structure electrically connected to and formed on a connection pad of the semiconductor device, wherein the metal bump is sized smaller than the UBM structure. Subsequently, a solder bump is mounted on the UBM structure and encapsulates the metal bump, so as to increase the bonding area and simultaneously allow the solder bump to be sufficiently wetted on the UBM structure to enhance bonding stress of the solder bump.

Abstract: A nickel/gold (Ni/Au) pad structure of a semiconductor package and a fabrication method thereof are provided. The fabrication method includes preparing a core layer; forming a conductive trace layer on the core layer; patterning the conductive trace layer to form at least one pad of the conductive trace layer; applying a conductive layer; forming a photoresist layer to define a predetermined plating region on the pad, wherein the predetermined plating region is smaller in area than the pad; forming a Ni/Au layer on the predetermined plating region; removing the photoresist layer and etching away the conductive layer; and applying a solder mask layer and forming at least one opening in the solder mask layer to expose the pad, wherein the opening is larger in area than the Ni/Au layer. The Ni/Au pad structure fabricated by the above method can prevent a solder extrusion effect incurred in the conventional technology.

Abstract: A semiconductor package with build-up layers formed on a chip and a fabrication method of the semiconductor package are provided. A chip with a plurality of conductive bumps formed on bond pads thereof is received within a cavity of a carrier, and a dielectric layer encapsulates the conductive bumps whose ends are exposed. A plurality of conductive traces are formed on the dielectric layer and electrically connected to the ends of the conductive bumps. A solder mask layer is applied over the conductive traces and formed with openings via which predetermined portions of the conductive traces are exposed and bonded to a plurality of solder balls. Thereby, positions of the bond pads are easily recognized and distinguished by the exposed ends of the conductive bumps, making the conductive traces capable of being well electrically connected through the conductive bumps to the bond pads to improve yield of the fabricated packages.

Abstract: A semiconductor package and a method for fabricating the same are proposed. A substrate having a first circuit layer, a second circuit layer, and a core layer formed between the first and second circuit layers is provided. At least one second opening is formed on the second circuit layer. At least one first opening is formed on the first circuit layer corresponding to the second opening. A plurality of finger holes corresponding to bond fingers on the first circuit layer are formed in the core layer. A through opening is formed in the core layer and communicates with the first and second openings. At least one chip is mounted on the first circuit layer and covers the first opening, with its active surface being exposed to the first opening. An encapsulant is formed to fill the first and second openings and the through opening and encapsulate the chip.

Abstract: A high electrical performance semiconductor package is proposed. A carrier is provided having a first surface, an opposite second surface, and conductive vias for electrically connecting the first surface to the second surface. A chip is attached to the first surface of the carrier. A plurality of via lands are disposed peripherally on the first surface of the carrier and electrically connected to the vias. A plurality of conductive regions are disposed on the second surface of the carrier and electrically connected to the vias. A plurality of fingers are disposed around the chip and electrically connected to the via lands by conductive traces formed on the first surface of the carrier. A plurality of bonding wires electrically connect the chip to the fingers. Lengths of the wires for transmitting differential pair signals are substantially equal, and lengths of the traces for transmitting the differential pair signals are substantially equal.

Abstract: A semiconductor package and a fabrication method thereof are provided in which a dielectric material layer formed with a plurality of openings is used and a solder material is applied into each of the openings. A first copper layer and a second copper layer are in turn deposited over the dielectric material layer and solder materials, and the first and second copper layers are patterned to form a plurality of conductive traces each of which has a terminal coated with a metal layer. A chip is mounted on the conductive traces and electrically connected to the terminals by bonding wires, with the dielectric material layer and solder materials being exposed to the outside. This package structure can flexibly arrange the conductive traces and effectively shorten the bonding wires, thereby improve trace routability and quality of electrical connection for the semiconductor package.

Abstract: A semiconductor package and a fabrication method thereof are provided in which a dielectric material layer formed with a plurality of openings is used and a solder material is applied into each of the openings. A first copper layer and a second copper layer are in turn deposited over the dielectric material layer and solder materials, and the first and second copper layers are patterned to form a plurality of conductive traces each of which has a terminal coated with a metal layer. A chip is mounted on the conductive traces and electrically connected to the terminals by bonding wires, with the dielectric material layer and solder materials being exposed to the outside. This package structure can flexibly arrange the conductive traces and effectively shorten the bonding wires, thereby improve trace routability and quality of electrical connection for the semiconductor package.

Abstract: A semiconductor package and a fabrication method thereof are provided in which a dielectric material layer formed with a plurality of openings is used and a solder material is applied into each of the openings. A first copper layer and a second copper layer are in turn deposited over the dielectric material layer and solder materials, and the first and second copper layers are patterned to form a plurality of conductive traces each of which has a terminal coated with a metal layer. A chip is mounted on the conductive traces and electrically connected to the terminals by bonding wires, with the dielectric material layer and solder materials being exposed to the outside. This package structure can flexibly arrange the conductive traces and effectively shorten the bonding wires, thereby improve trace routability and quality of electrical connection for the semiconductor package.

Abstract: A semiconductor package and a fabrication method thereof are provided in which a dielectric material layer formed with a plurality of openings is used and a solder material is applied into each of the openings. A first copper layer and a second copper layer are in turn deposited over the dielectric material layer and solder materials, and the first and second copper layers are patterned to form a plurality of conductive traces each of which has a terminal coated with a metal layer. A chip is mounted on the conductive traces and electrically connected to the terminals by bonding wires, with the dielectric material layer and solder materials being exposed to the outside. This package structure can flexibly arrange the conductive traces and effectively shorten the bonding wires, thereby improve trace routability and quality of electrical connection for the semiconductor package.

Abstract: A semiconductor package and a fabrication method thereof are provided in which a dielectric material layer formed with a plurality of openings is used and a solder material is applied into each of the openings. A first copper layer and a second copper layer are in turn deposited over the dielectric material layer and solder materials, and the first and second copper layers are patterned to form a plurality of conductive traces each of which has a terminal coated with a metal layer. A chip is mounted on the conductive traces and electrically connected to the terminals by bonding wires, with the dielectric material layer and solder materials being exposed to the outside. This package structure can flexibly arrange the conductive traces and effectively shorten the bonding wires, thereby improve trace routability and quality of electrical connection for the semiconductor package.

Abstract: A semiconductor package and a fabrication method thereof are provided in which a dielectric material layer formed with a plurality of openings is used and a solder material is applied into each of the openings. A first copper layer and a second copper layer are in turn deposited over the dielectric material layer and solder materials, and the first and second copper layers are patterned to form a plurality of conductive traces each of which has a terminal coated with a metal layer. A chip is mounted on the conductive traces and electrically connected to the terminals by bonding wires, with the dielectric material layer and solder materials being exposed to the outside. This package structure can flexibly arrange the conductive traces and effectively shorten the bonding wires, thereby improve trace routability and quality of electrical connection for the semiconductor package.

Abstract: A cavity-down ball grid array (CDBGA) semiconductor package with a heat spreader is provided, in which a substrate is formed with at least a ground ring, a plurality of ground vias, a ground layer, and at least an opening for receiving at least a chip. The substrate is mounted in a cavity of the heat spreader, and an electrically conductive adhesive is disposed between an inner wall of the cavity and edges of the substrate, so as to allow the ground layer and the ground ring exposed to the edges of the substrate to be electrically connected to the heat spreader by means of the electrically conductive adhesive. By the above arrangement with the heat spreader being included in a grounding circuit path of the chip, ground floatation and excess ground inductance and resistance can be prevented for the semiconductor package, thereby solving heat-dissipation, electromagnetic interference and crosstalk problems.

Abstract: A semiconductor package and a fabrication method thereof are provided in which a dielectric material layer formed with a plurality of openings is used and a solder material is applied into each of the openings. A first copper layer and a second copper layer are in turn deposited over the dielectric material layer and solder materials, and the first and second copper layers are patterned to form a plurality of conductive traces each of which has a terminal coated with a metal layer. A chip is mounted on the conductive traces and electrically connected to the terminals by bonding wires, with the dielectric material layer and solder materials being exposed to the outside. This package structure can flexibly arrange the conductive traces and effectively shorten the bonding wires, thereby improve trace routability and quality of electrical connection for the semiconductor package.

Abstract: A chip carrier with a dam bar structure is proposed. The chip carrier is defined with at least a chip attach area and a wire bonding area surrounding the chip attach area, allowing a chip to be mounted on the chip attach area and electrically connected to the wire bonding area by bonding wires bonded to the wire bonding area. A molding gate and a dam bar are formed on the substrate outside the chip attach area and wire bonding area. An molding compound is injected through the molding gate for encapsulating the chip and bonding wires. The dam bar is provided with a first gate directed toward the molding gate, a second gate and a third gate opposed to the second gate, wherein the second and third gates are each vertically arranged with respect to the molding gate, allowing the molding compound to divert its flow direction by the dam bar.

Abstract: A cavity-down ball grid array (CDBGA) semiconductor package with a heat spreader is provided, in which a substrate is formed with at least a ground ring, a plurality of ground vias, a ground layer, and at least an opening for receiving at least a chip. The substrate is mounted in a cavity of the heat spreader, and an electrically conductive adhesive is disposed between an inner wall of the cavity and edges of the substrate, so as to allow the ground layer and the ground ring exposed to the edges of the substrate to be electrically connected to the heat spreader by means of the electrically conductive adhesive. By the above arrangement with the heat spreader being included in a grounding circuit path of the chip, ground floatation and excess ground inductance and resistance can be prevented for the semiconductor package, thereby solving heat-dissipation, electromagnetic interference and crosstalk problems.

Abstract: A chip carrier with a dam bar structure is proposed. The chip carrier is defined with at least a chip attach area and a wire bonding area surrounding the chip attach area, allowing a chip to be mounted on the chip attach area and electrically connected to the wire bonding area by bonding wires bonded to the wire bonding area. A molding gate and a dam bar are formed on the substrate outside the chip attach area and wire bonding area. An molding compound is injected through the molding gate for encapsulating the chip and bonding wires. The dam bar is provided with a first gate directed toward the molding gate, a second gate and a third gate opposed to the second gate, wherein the second and third gates are each vertically arranged with respect to the molding gate, allowing the molding compound to divert its flow direction by the dam bar.

Abstract: A semiconductor packaging technology is proposed for the fabrication of a chip-on-chip (COC) based multi-chip module (MCM) with molded underfill. The proposed semiconductor packaging technology is characterized by the provision of a side gap of an empirically-predetermined width between the overlying chips mounted through COC technology over an underlying chip to serve as an air vent during molding process. This allows the injected molding material to flow freely into the flip-chip undergaps during molding process. In actual application, the exact width of the side gap is empirically predetermined through molded-underfill simulation experiments to find the optimal value. Based on experimental data, it is found that this side gap width should be equal to or less than 0.3 mm to allow optimal underfill effect. The optimal value for this side gap width may be varied for different package specifications.

Abstract: A semiconductor packaging technology is proposed for the fabrication of a chip-on-chip (COC) based multi-chip module (MCM) with molded underfill. The proposed semiconductor packaging technology is characterized by the provision of a side gap of an empirically-predetermined width between the overlying chips mounted through COC technology over an underlying chip to serve as an air vent during molding process. This allows the injected molding material to flow freely into the flip-chip undergaps during molding process. In actual application, the exact width of the side gap is empirically predetermined through molded-underfill simulation experiments to find the optimal value. Based on experimental data, it is found that this side gap width should be equal to or less than 0.3 mm to allow optimal underfill effect. The optimal value for this side gap width may be varied for different package specifications.

Abstract: A semiconductor package with a heat dissipating element is proposed, in which the contact area between a semiconductor chip and the heat dissipating element is significantly reduced as the chip merely has its edge portion attached to the dissipating element. This makes an effect of a thermal stress on the chip reduced so as to prevent cracking and delamination for the chip. Moreover, the chip is partially exposed to the atmosphere, which allows the efficiency of heat dissipation and moisture escapement to be improved, so as to prevent a popcorn effect from occurrence and make the semiconductor package assured in reliability and quality.