Abstract: According to an aspect, a multi-chip packaging structure includes a first substrate having a first surface and a second surface, where the first substrate has a conductive layer portion. The multi-chip packaging structure includes an image sensor device coupled to the first surface of the first substrate, a first device coupled to the second surface of the first substrate, and a second substrate disposed apart from the first substrate, where the second substrate has a conductive layer portion. The conductive layer portion of the first substrate is communicatively connected to the conductive layer portion of the second substrate. The first device is disposed between the first substrate and the second substrate. The multi-chip packaging structure includes a second device coupled to the second substrate, and a third device coupled to the first substrate or the second substrate.

Abstract: According to an aspect, an image sensor package includes a substrate, an image sensor die coupled to the substrate, and a transparent member including a first surface and a second surface, where the second surface of the transparent member is coupled to the image sensor die via one or more dam members such that an empty space exists between an active area of the image sensor die and the second surface of the transparent member. The image sensor package includes a light blocking member coupled to or defined by the transparent member.

Abstract: Implementations of semiconductor packages may include: a semiconductor wafer, a glass lid fixedly coupled to a first side of the semiconductor die by an adhesive, a redistribution layer coupled to a second side of the semiconductor die, and a plurality of ball mounts coupled to the redistribution layer on a side of the redistribution layer coupled to the semiconductor die. The adhesive may be located in a trench around a perimeter of the semiconductor die and located in a corresponding trench around a perimeter of the glass lid.

Abstract: According to an aspect, a stack packaging structure includes a substrate, a semiconductor device coupled to a surface of the substrate, an image sensor device coupled to the semiconductor device such that the semiconductor device is disposed between the surface of the substrate and the image sensor device, at least one bond wire connected to the image sensor device and the surface of the substrate, a inner molding disposed between the surface of the substrate and the image sensor device, where the semiconductor device is encapsulated within the inner molding, and an outer molding disposed on the surface of the substrate, where the at least one bond wire is encapsulated within the outer molding.

Abstract: According to an aspect, a multi-chip packaging structure includes a first substrate having a first surface and a second surface, where the first substrate has a conductive layer portion. The multi-chip packaging structure includes an image sensor device coupled to the first surface of the first substrate, a first device coupled to the second surface of the first substrate, and a second substrate disposed apart from the first substrate, where the second substrate has a conductive layer portion. The conductive layer portion of the first substrate is communicatively connected to the conductive layer portion of the second substrate. The first device is disposed between the first substrate and the second substrate. The multi-chip packaging structure includes a second device coupled to the second substrate, and a third device coupled to the first substrate or the second substrate.

Abstract: Implementations of semiconductor packages may include: a substrate having a first side and a second side and a die having an active area on a second side of the die. A first side of the die may be coupled to the second side of the substrate. The semiconductor package may also include a glass lid having a first side and a second side. The glass lid may be coupled over a second side of the die. The semiconductor package may include a first and a second molding compound and one or more cushions positioned between a first side of the glass lid and a portion of the first molding compound. The second molding compound may be coupled to the substrate and the around the die and the glass lid.

Abstract: According to an aspect, a stack packaging structure includes a substrate, a semiconductor device coupled to a surface of the substrate, an image sensor device coupled to the semiconductor device such that the semiconductor device is disposed between the surface of the substrate and the image sensor device, at least one bond wire connected to the image sensor device and the surface of the substrate, a inner molding disposed between the surface of the substrate and the image sensor device, where the semiconductor device is encapsulated within the inner molding, and an outer molding disposed on the surface of the substrate, where the at least one bond wire is encapsulated within the outer molding.

Abstract: According to an aspect, a multi-chip packaging structure includes a first substrate having a first surface and a second surface, where the first substrate has a conductive layer portion. The multi-chip packaging structure includes an image sensor device coupled to the first surface of the first substrate, a first device coupled to the second surface of the first substrate, and a second substrate disposed apart from the first substrate, where the second substrate has a conductive layer portion. The conductive layer portion of the first substrate is communicatively connected to the conductive layer portion of the second substrate. The first device is disposed between the first substrate and the second substrate. The multi-chip packaging structure includes a second device coupled to the second substrate, and a third device coupled to the first substrate or the second substrate.

Abstract: Implementations of semiconductor packages may include: a semiconductor wafer, a glass lid fixedly coupled to a first side of the semiconductor die by an adhesive, a redistribution layer coupled to a second side of the semiconductor die, and a plurality of ball mounts coupled to the redistribution layer on a side of the redistribution layer coupled to the semiconductor die. The adhesive may be located in a trench around a perimeter of the semiconductor die and located in a corresponding trench around a perimeter of the glass lid.

Abstract: An image sensor semiconductor package (package) includes a printed circuit board (PCB) having a first surface and a second surface opposite the first surface. A complementary metal-oxide semiconductor (CMOS) image sensor (CIS) die has a first surface with a photosensitive region and a second surface opposite the first surface of the CIS die. The second surface of the CIS die is coupled with the first surface of the PCB. A transparent cover is coupled over the photosensitive region of the CIS die. An image signal processor (ISP) is embedded within the PCB. One or more electrical couplers electrically couple the CIS die with the PCB. A plurality of electrical contacts on the second surface of the PCB are electrically coupled with the CIS die and with the ISP. The ISP is located between the plurality of electrical contacts of the second surface of the PCB and the CIS die.

Abstract: Implementations of semiconductor packages may include: a substrate, a die electrically coupled to the substrate, and a wall coupled to the substrate wall. The wall may extend around a perimeter of the die. The wall may include a molding dam formed therein. The semiconductor package may also include a glass lid coupled to the wall and the molding dam. A mold compound may be coupled into the molding dam and across a thickness of the glass lid.

Abstract: An image sensor semiconductor package (package) includes a printed circuit board (PCB) having a first surface and a second surface opposite the first surface. A complementary metal-oxide semiconductor (CMOS) image sensor (CIS) die has a first surface with a photosensitive region and a second surface opposite the first surface of the CIS die. The second surface of the CIS die is coupled with the first surface of the PCB. A transparent cover is coupled over the photosensitive region of the CIS die. An image signal processor (ISP) is embedded within the PCB. One or more electrical couplers electrically couple the CIS die with the PCB. A plurality of electrical contacts on the second surface of the PCB are electrically coupled with the CIS die and with the ISP. The ISP is located between the plurality of electrical contacts of the second surface of the PCB and the CIS die.

Abstract: Implementations of semiconductor packages may include: a semiconductor wafer, a glass lid fixedly coupled to a first side of the semiconductor die by an adhesive, a redistribution layer coupled to a second side of the semiconductor die, and a plurality of ball mounts coupled to the redistribution layer on a side of the redistribution layer coupled to the semiconductor die. The adhesive may be located in a trench around a perimeter of the semiconductor die and located in a corresponding trench around a perimeter of the glass lid.

Abstract: Implementations of semiconductor packages may include: a substrate coupled to one or more die and to one or more connectors, a glass lid coupled over one or more die by an adhesive and a housing comprising one or more sides and a bottom opening and a top opening. The substrate may be coupled to the housing at the bottom opening and the glass lid may be coupled under the housing at the top opening.

Abstract: Implementations of semiconductor packages may include: a substrate coupled to one or more die and to one or more connectors, a glass lid coupled over one or more die by an adhesive and a housing comprising one or more sides and a bottom opening and a top opening. The substrate may be coupled to the housing at the bottom opening and the glass lid may be coupled under the housing at the top opening.

Abstract: A semiconductor wafer has an image sensor area with a light transmissive wafer, such as glass, disposed over the semiconductor wafer. A portion of the semiconductor wafer is removed to thin the wafer. A semiconductor die is disposed over a surface of the semiconductor wafer opposite the light transmissive wafer. An encapsulant is deposited around the semiconductor die. A portion of the encapsulant is removed to planarize the encapsulant. A conductive via is formed through the semiconductor wafer and first encapsulant. An interconnect structure is formed over the encapsulant and semiconductor die. The interconnect structure includes multiple insulating layers and multiple conductive layers. The multiple insulating layers can be an encapsulant. The semiconductor wafer is singulated to form a multi-die semiconductor package, which integrates the image sensor semiconductor die with other types of semiconductor die to enhance the image performance within the multi-die package.

Abstract: A semiconductor wafer has an image sensor area with a light transmissive wafer, such as glass, disposed over the semiconductor wafer. A portion of the semiconductor wafer is removed to thin the wafer. A semiconductor die is disposed over a surface of the semiconductor wafer opposite the light transmissive wafer. An encapsulant is deposited around the semiconductor die. A portion of the encapsulant is removed to planarize the encapsulant. A conductive via is formed through the semiconductor wafer and first encapsulant. An interconnect structure is formed over the encapsulant and semiconductor die. The interconnect structure includes multiple insulating layers and multiple conductive layers. The multiple insulating layers can be an encapsulant. The semiconductor wafer is singulated to form a multi-die semiconductor package, which integrates the image sensor semiconductor die with other types of semiconductor die to enhance the image performance within the multi-die package.

Abstract: Implementations of semiconductor packages may include: a substrate including a first side and a second side and an image signal processor (ISP) including a first side and a second side where first side of the ISP is coupled to the first side of the substrate. A first mold compound may encapsulate the second side of the ISP and an image sensor having a first side and a second side. The first side of the image sensor is coupled to the first mold compound which may be substantially coextensive with a perimeter of the first side of the image sensor. Implementations of image sensor packages may also include an optically transmissive cover and a polymeric compound encapsulating a portion of the substrate, the first mold compound, the image sensor, and a portion of the optically transmissive cover.

Abstract: Implementations of semiconductor packages may include: a semiconductor wafer, a glass lid fixedly coupled to a first side of the semiconductor die by an adhesive, a redistribution layer coupled to a second side of the semiconductor die, and a plurality of ball mounts coupled to the redistribution layer on a side of the redistribution layer coupled to the semiconductor die. The adhesive may be located in a trench around a perimeter of the semiconductor die and located in a corresponding trench around a perimeter of the glass lid.

Abstract: Implementations of semiconductor packages may include: a semiconductor wafer, a glass lid fixedly coupled to a first side of the semiconductor die by an adhesive, a redistribution layer coupled to a second side of the semiconductor die, and a plurality of ball mounts coupled to the redistribution layer on a side of the redistribution layer coupled to the semiconductor die. The adhesive may be located in a trench around a perimeter of the semiconductor die and located in a corresponding trench around a perimeter of the glass lid.