Abstract: A semiconductor light emitting device including a substrate, a plurality of semiconductor light emitting units and a plurality of non-conductive walls is provided. The semiconductor light emitting device is disposed on the substrate in an array. Each of the semiconductor light emitting units has a first electrode and a second electrode opposite to the first electrode. Each of the semiconductor light emitting units is electrically connected to the substrate through the first electrode, and the semiconductor light emitting units are electrically connected together to a conducting layer through the second electrodes. The semiconductor light emitting units have different emission colors. The non-conductive walls are disposed between adjacent semiconductor light emitting units, to separate the semiconductor light emitting units. A fabricating method of semiconductor light emitting device is also provided.

Abstract: In an embodiment, a light emitting device comprises a light emitting diode chip and a spherical extending electrode. The light emitting diode chip includes a semiconductor epitaxial structure, a first electrode and a second electrode. The first electrode and the second electrode are disposed on two opposite sides of the semiconductor epitaxial structure, respectively. The first electrode is disposed between the semiconductor epitaxial structure and the spherical extending electrode, and the spherical extending electrode is electrically connected to the semiconductor epitaxial structure electrically through the first electrode. The volume of the spherical extending electrode is greater than that of the light emitting diode chip.

Abstract: In an embodiment, a light emitting device comprises a light emitting diode chip and a spherical extending electrode. The light emitting diode chip includes a semiconductor epitaxial structure, a first electrode and a second electrode. The first electrode and the second electrode are disposed on two opposite sides of the semiconductor epitaxial structure, respectively. The first electrode is disposed between the semiconductor epitaxial structure and the spherical extending electrode, and the spherical extending electrode is electrically connected to the semiconductor epitaxial structure electrically through the first electrode. The volume of the spherical extending electrode is greater than that of the light emitting diode chip.

Abstract: A curtain blinds spring motor elasticity maintaining structure, which provides a spring motor structure that prevents unproductive deformation and loss of elastic stress in a sheet band of a coil spring. The structure primarily consists of a kidney shaped wheel face provided on the outer circumferential surface of a drive drum. A first wound layer, a second wound layer, and a third wound layer of the sheet band are pulled and wound onto the drive drum to form a pressure accumulating coil, thereby arranging an anticipated configuration of curved tight windings of each of the wound layers along the kidney shaped wheel face, which prevents changes in the cross-sectional curvature of the sheet band and loss in elastic stress thereof, and thus maintaining an appropriate elastic force.

Abstract: A button structure includes a circuit board, a switch module, a light source module, and a button body. The button body includes a substantially cylindrical shaped light guide member and a pressing member. The light guide member includes a periphery wall having at least one light guide surface. The pressing member is movably mounted in the light guide member and faces the switch module. When the pressing member is pressed, the pressing member activates the switch module and the switch module is activated to control the light source module to irradiate light, so that the light from the light source module enters the light guide member through the at least one light guide surface and is emitted out from a top portion of the periphery wall.

Abstract: A method for forming a photovoltaic device includes depositing a p-type layer on a substrate. A barrier layer is formed on the p-type layer by exposing the p-type layer to an oxidizing agent. An intrinsic layer is formed on the barrier layer, and an n-type layer is formed on the intrinsic layer.

Abstract: A curtain reel device with rolling up and down spring motor using pull cords to take-up and let-down a horizontal blind set of the blinds. A take-up and let-down motor installed in the interior is provided with a self-feedback operation that operates pull cords for taking up and letting down blinds. A simple coil spring is installed with a reel device, and the inner circumference of a reposition coil formed by the coil spring directly forms an inner annular hub with a fixed diameter by coiling up the end of an elastic sheet band. The inner annular hub is mounted on a pivot shaft joined to side walls to enable movable free rotation thereof. The inner annular hub is in a separation rotational speed relationship with an idler gear coaxially assembled to one end of the pivot shaft, thereby simplifying the structural components of the reel device.

Abstract: A chip card holder includes a tray and a protecting member. The tray includes a receiving portion and a handle portion. The receiving portion is configured to receive a chip card. The handle portion is positioned at a side of the receiving portion. The protecting member is sleeved on the receiving portion and resists the handle portion. The protecting member is made of elastic material so as to prevent outside contamination from entering the chip card holder.

Abstract: A semiconductor light emitting device including a substrate, a plurality of semiconductor light emitting units and a plurality of non-conductive walls is provided. The semiconductor light emitting device is disposed on the substrate in an array. Each of the semiconductor light emitting units has a first electrode and a second electrode opposite to the first electrode. Each of the semiconductor light emitting units is electrically connected to the substrate through the first electrode, and the semiconductor light emitting units are electrically connected together to a conducting layer through the second electrodes. The semiconductor light emitting units have different emission colors. The non-conductive walls are disposed between adjacent semiconductor light emitting units, to separate the semiconductor light emitting units. A fabricating method of semiconductor light emitting device is also provided.

Abstract: A method for displaying text and graph message is provided. In the present invention, with changing or adding effect for existing text or graph message by a user and displaying on the application programming interfaces of both sides, the performances of the situational effect of messages is increased, and the program of text and graph message exchange is more efficient for the purpose of better interactive communication.

Abstract: A package structure for a light emitting device is provided, wherein an anisotropic conductive film (ACF) and flip-chip bonding technique can be applied for bonding the light emitting device to a carrier. In addition, plural package units are stacked by performing a build-up process or a lamination process to form a full color micro-display. The package structure for the light emitting device provides simple and quick manufacturing process and is suitable for mass production. Furthermore, solutions for optical issues such as light guiding or light mixing are also provided.

Abstract: A method for forming a photovoltaic device includes depositing a p-type layer on a substrate. A barrier layer is formed on the p-type layer by exposing the p-type layer to an oxidizing agent. An intrinsic layer is formed on the barrier layer, and an n-type layer is formed on the intrinsic layer.

Abstract: A method for forming a photovoltaic device includes depositing a p-type layer on a substrate. A barrier layer is formed on the p-type layer by exposing the p-type layer to an oxidizing agent. An intrinsic layer is formed on the barrier layer, and an n-type layer is formed on the intrinsic layer.

Abstract: A chip card holder includes a tray and a protecting member. The tray includes a receiving portion and a handle portion. The receiving portion is configured to receive a chip card. The handle portion is positioned at a side of the receiving portion. The protecting member is sleeved on the receiving portion and resists the handle portion. The protecting member is made of elastic material so as to prevent outside contamination from entering the chip card holder.

Abstract: A first back surface of a first chip faces toward a carrier. A first active surface of the first chip has first pads and a first insulting layer thereon. A second chip is disposed on the first chip and electrically connected to the carrier. A second active surface of the second chip faces toward the first active surface. The second active surface has second pads and a second insulting layer thereon. Bumps connect the first and second pads. First and second daisy chain circuits are respectively disposed on the first and second insulting layers. Hetero thermoelectric device pairs are disposed between the first and second chips and connected in series by the first and second daisy chain circuits, and constitute a circuit with an external device. First and second heat sinks are respectively disposed on a second surface of the carrier and a second back surface of the second chip.

Abstract: Methods for forming a photovoltaic device include depositing a p-type layer on a substrate and cleaning the p-type layer by exposing a surface of the p-type layer to a plasma treatment to react with contaminants. An intrinsic layer is formed on the p-type layer, and an n-type layer is formed on the intrinsic layer.

Abstract: This disclosure related to a stacked chip package structure having a sloped dam structure located on the substrate and beside the chip stack. The dam structure can facilitate the dispensing process of the underfill.

Abstract: Methods for forming a photovoltaic device include depositing a p-type layer on a substrate and cleaning the p-type layer by exposing a surface of the p-type layer to a plasma treatment to react with contaminants. An intrinsic layer is formed on the p-type layer, and an n-type layer is formed on the intrinsic layer.

Abstract: A method for forming a photovoltaic device includes depositing a p-type layer on a substrate. A barrier layer is formed on the p-type layer by exposing the p-type layer to an oxidizing agent. An intrinsic layer is formed on the barrier layer, and an n-type layer is formed on the intrinsic layer.

Abstract: Chip package processes and chip package structures are provided. The chip package structure includes a substrate, a chip, an insulating layer, a third patterned conductive layer and an electronic element. The substrate has a first patterned conductive layer. The chip is disposed on the substrate. A second patterned conductive layer of the chip is bonded to the first patterned conductive layer of the substrate. The chip has a first through hole. The insulating layer is disposed on the chip and filled into the first through hole. The insulating layer has a second through hole which passes through the first through hole. The third patterned conductive layer is disposed on the insulating layer and filled into the second through hole to electrically connect to the first patterned conductive layer. The electronic element is disposed on the third patterned conductive layer and electrically connects to the third patterned conductive layer.