Abstract: In a method of head-disk contact detection in a hard disk drive, a Radio Frequency (RF) carrier signal is injected into a slider which is flying above a surface of a disk in a hard disk drive. A modulated version of the RF carrier signal is received from the slider. The modulated version of the RF carrier signal is demodulated to achieve a demodulated signal. A signal spectrum of a range of frequencies in the demodulated signal is monitored for activity indicative of a contact between a head of the slider and the surface of the disk. An occurrence of the contact is determined based upon an occurrence of the activity.

Abstract: A method of fabricating a semiconductor device includes forming in the substrate a well region comprising a first type of dopant; forming in the well region a base region comprising a second type of dopant different from the first type of dopant; and forming in the substrate source and drain regions comprising the first type of dopant. The method further includes forming on the substrate a gate electrode interposed laterally between the source and drain regions; and forming on the substrate a gate spacer disposed laterally between the source region and the gate electrode adjacent a side of the gate electrode and having a conductive feature embedded therein. The well region surrounds the drain region and the base region, and the base region is disposed partially underlying the gate electrode surrounding the source region defining a channel under the gate electrode of having a length substantially less than half the length of the gate electrode.

Abstract: In a method of head-disk contact detection in a hard disk drive, a Radio Frequency (RF) carrier signal is injected into a slider which is flying above a surface of a disk in a hard disk drive. A modulated version of the RF carrier signal is received from the slider. The modulated version of the RF carrier signal is demodulated to achieve a demodulated signal. A signal spectrum of a range of frequencies in the demodulated signal is monitored for activity indicative of a contact between a head of the slider and the surface of the disk. An occurrence of the contact is determined based upon an occurrence of the activity.

Abstract: A semiconductor device includes a source region and a drain region disposed in a substrate wherein the source and drain regions have a first type of dopant; a gate electrode formed on the substrate interposed laterally between the source and drain regions; a gate spacer disposed on the substrate and laterally between the source region and the gate electrode, adjacent a side of the gate electrode; and a conductive feature embedded in the gate spacer.

Abstract: A method for preparing for a photocatalyst. The method comprises steps of providing a mixture of indium oxide and vanadium oxide and then calcining the mixture to obtain a indium vanadium quadrioxide. Further, a nickel nitrate solution is added to the indium vanadium quadrioxide to form a catalyst with a nickel oxide supported amount of about 0.1-2.0 wt. % and a post treatment is performed on the catalyst. In the post treatment, a reduction process is performed and then an oxidation process is performed.

Abstract: A transistor suitable for high-voltage applications and a method of manufacture is provided. A first device is formed by depositing a dielectric layer and a conductive layer over a substrate. A hard mask is deposited over the conductive layer and patterned using photolithography techniques. The photoresist material is removed prior to etching the underlying conductive layer and dielectric layer. The hard mask is also used as an implant mask. Another mask may be deposited and formed over the conductive layer to form other devices in other regions of the substrate. The other mask is preferably removed from over the hard mask prior to etching the conductive layer and the dielectric layer.

Abstract: A group authentication method adaptable to a communication system is disclosed. The communication system includes a user group, a serving network, and a home network. The user group includes at least one mobile station. The home network pre-distributes a group authentication key to itself and all the mobile stations in the same user group and generates a mobile station authentication key for each mobile station. The home network generates a group list for recording related information of the user group. The home network has a database for recording the group list. The serving network has a database for recording the group list and a group authentication data received from the home network. The group authentication method includes following steps. The serving network performs an identification action to a mobile station. The communication system performs a full authentication action or a local authentication action according to the result of the identification action.

Abstract: A semiconductor device includes a source region and a drain region disposed in a substrate wherein the source and drain regions have a first type of dopant; a gate electrode formed on the substrate interposed laterally between the source and drain regions; a gate spacer disposed on the substrate and laterally between the source region and the gate electrode, adjacent a side of the gate electrode; and a conductive feature embedded in the gate spacer.

Abstract: Goldcatalyst Goldcatalyst comprising gold on a support of ceria or ceria-manganese oxide is used for the oxidation of CO in a H2 stream.

Abstract: This present invention provides the preparation of a manganese oxide-ferric oxide-supported nano-gold catalyst and a process for subjecting carbon monoxide and oxygen to interaction resulting in the formation of carbon dioxide in a hydrogen-rich environment by a manganese oxide-ferric oxide-supported nano-gold catalyst to remove carbon monoxide in hydrogen stream. The size of the nano-gold particle is less than 5 nm and supported on mixed oxides MnO2/Fe2O3 in various molar ratios. Preferential oxidation of CO in the presence of CO, O2 and H2 by the manganese oxide-ferric oxide-supported nano-gold catalyst is carried out in a fixed-bed reactor in the process of the present invention. The O2/CO molar ratio is in the range of 0.5 to 4. The manganese oxide-ferric oxide-supported nano-gold catalyst of the present invention is applied to reduce CO concentration in hydrogen steam to less than 100 ppm to prevent CO from contaminating the electrodes of a fuel cell.

Abstract: A method for manufacturing semiconductor packages is provided. The upper surface of a substrate has a plurality of slots and surface mount devices are positioned across the slots. In this circumstance, the space below the surface mount devices can be filled up with sealant as a result of the arrangement of the slots. This can avoid the occurrence of the melted solders to bridge to each other and of the tomb stone effect of the surface mount devices.

Abstract: This present invention provides the preparation of a manganese oxide-cerium oxide-supported nano-gold catalyst and a process for subjecting carbon monoxide and oxygen to interaction resulting in the formation of carbon dioxide in a hydrogen-rich environment by a manganese oxide-cerium oxide-supported nano-gold catalyst to remove carbon monoxide in hydrogen stream. The size of the nano-gold particle is less than 5 nm and supported on mixed oxides MnO2/CeO2 in various molar ratios. Preferential oxidation of CO in the presence of CO, O2 and H2 by the manganese oxide-cerium oxide-supported nano-gold catalyst is carried out in a fixed-bed reactor in the process of the present invention. The CO/O2 molar ratio is in the range of 0.5 to 3. The manganese oxide-cerium oxide-supported nano-gold catalyst of the present invention is applied to reduce CO concentration in hydrogen steam to less than 100 ppm to prevent CO from contaminating the electrodes of a fuel cell.

Abstract: A hydrogenation process of chloronitrobenzene. The hydrogenation process comprises the steps of producing a nanosized boron-containing nickel catalyst, wherein a ratio of the amount of the boron atom to the amount of the nickel atom in the nanosized boron-containing nickel catalyst is of about 0.1-0.9. Then, the nanosized boron-containing nickel catalyst is placed into a reactor with a chloronitrobenzene an alcohol solvent having carbon number less than four per molecule and a hydrogenation process is performed to hydrogenating the chloronitrobenzene in hydrogen with a reaction pressure of about 5-40 atm and a reaction temperature of about 40-150° C.

Abstract: Dextrorotatory morphinan derivatives of formula (I) or pharmaceutically acceptable salts thereof were found to have local anesthetic effects: wherein R and R? are independently selected from hydrogen and a methyl group, and at least one of R and R? is a methyl group. The dextrorotatory morphinan derivatives of formula (I) or pharmaceutically acceptable salts thereof can therefore be used in the manufacture of pharmaceutical compositions for local anesthesia that may provide a safe and prolonged local anesthetic effect.

Abstract: A hydrogenation process of chloronitrobenzene. The hydrogenation process comprises the steps of producing a nanosized boron-containing nickel catalyst, wherein a ratio of the amount of the boron atom to the amount of the nickel atom in the nanosized boron-containing nickel catalyst is of about 0.1-0.9. Then, the nanosized boron-containing nickel catalyst is placed into a reactor with a chloronitrobenzene an alcohol solvent having carbon number less than four per a molecular and a hydrogenation process is performed to hydrogenating the chloronitrobenzene in hydrogen with a reaction pressure of about 5-40 atm and a reaction temperature of about 40-150° C.