Abstract: Semiconductor structures and method of forming the same are provided. A method according to the present disclosure includes providing an intermediate structure that includes an opening, conformally depositing a metal liner over the opening, depositing a dummy fill material over the metal liner, recessing the dummy fill material such that a portion of the metal liner is exposed, removing the exposed portion of the metal liner, removing the recessed dummy fill material, and after the removing of the recessed dummy fill material, depositing a metal fill layer over the opening.

Abstract: A display substrate, a manufacturing method thereof, and a display device. In the display substrate, the sub-pixel driving circuit includes a driving transistor and a first reset transistor, and a gate electrode of the first reset transistor is electrically connected to the reset signal line pattern, a first electrode of the first reset transistor is electrically connected to the initialization signal line pattern, and a second electrode of the first reset transistor is electrically connected to a gate electrode of the driving transistor; and the shielding pattern is electrically connected to the power signal line pattern, an orthographic projection of the shielding pattern on the substrate overlaps an orthographic projection of the first electrode of the first reset transistor on the substrate.

Abstract: A channel information determining method, and a non-transitory computer-readable storage medium are provided. The method includes: updating, activating, or indicating parameter information of a first channel or a first reference signal RS by using a media access control MAC control element CE command, where the parameter information of the first channel or the first reference signal RS is used for determining the parameter information of a second channel or a second RS under a preset condition; and the parameter information includes spatial relation information.

Abstract: This patent application discloses methods, apparatus, and systems that positioning enhancement in wireless communication systems.

Abstract: Semiconductor structures and methods for forming the same are provided. A semiconductor structure according to the present disclosure includes a substrate, a first base fin and a second base fin rising from the substrate, an isolation feature disposed over the substrate and between the first base fin and the second base fin, a first bottom epitaxial feature over the first base fin, a second bottom epitaxial feature over the second base fin, an isolation layer on the first bottom epitaxial feature, a first source/drain feature over the isolation layer, a second source/drain feature disposed over and in contact with the second bottom epitaxial feature, a contact etch stop layer (CESL) over the first source/drain feature and the isolation feature, a first interlayer dielectric (ILD) layer over the CESL, and a second ILD layer over and in direct contact with the second source/drain feature.

Abstract: Techniques for determining stroke risk are provided. In some embodiments, the techniques may involve causing, using one or more light sources disposed on a headset worn by a user, light to be emitted into the head of the user. The techniques may involve obtaining, using one or more light detectors disposed on the headset, information indicative of light reflected from one more structures within the head, wherein a portion of the obtained information spans a time period during which the user was holding their breath. The techniques may involve based on the obtained information, determining one or more cerebral blood metrics. The techniques may involve providing a representation of the one or more cerebral blood metrics as input to a trained machine learning model, and determining a likelihood the user will experience a stroke over a predetermined future time period based on an output of the trained machine learning model.

Abstract: Techniques for monitoring cerebral blood metrics such as cerebral blood flow, cerebral blood volume and/or heart rate are provided. In some embodiments, techniques involve a headset with at least one laser configured to emit light into the brain and one or more light detectors such as CMOS sensors that generate information indicative of light reflected from one or more structures within the brain, which can be used to determine the cerebral blood metrics. Each light detector may be positioned within 5 mm of the scalp in some cases.

Abstract: A method for handling a call using Sessions Initiation Protocol (SIP) includes sending an INVITE or a first media type by a network side to user equipment, sending an UPDATE of a second media type by the user equipment to the network side, receiving an SIP global failure response for the UPDATE by the user equipment from the network side, sending an SIP success response for the INVITE of the first media type by the user equipment to the network side, receiving an ACK of the first media type by the user equipment from the network side, and establishing a call session of the first media type between the user equipment and the network side.

Abstract: A display panel includes a drive backplane; a first electrode layer, including a plurality of first electrodes distributed in an array, where the first electrode includes a flat middle part and an edge part surrounding the middle part; a light-emitting function layer, at least partially covering the middle part; and a second electrode, covering the light-emitting function layer, and including a separating part and a plurality of flat parts separated by the separating part, where orthographic projections of the flat parts on the drive backplane are located in one-to-one correspondence within orthographic projections of the first electrodes on the drive backplane, the separating part includes a protruding area and a first recessed area connecting the protruding area and the flat part, and the protruding area is provided with a second recessed area recessed toward the drive backplane.

Abstract: An internal circulation type clathrate hydrate-based cold storage system and method are provided in the field of industrial refrigeration. The internal circulation type clathrate hydrate-based cold storage system includes a water chilling unit, a hydrate-based cold storage tank, a gas disturbance device, a concentration measurement system, a heat exchange system, a direct-current power supply and circuit control system, and a system monitoring device. The water chilling unit provides a secondary refrigerant at a low temperature. The secondary refrigerant flows through an evaporator coil in the hydrate-based cold storage tank for a heat exchange. The gas disturbance device induces hydrate nucleation. The concentration measurement system monitors a concentration of a hydrate solution in real time. The heat exchange system is equipped with a finned tube heat exchanger with a fan.

Abstract: An optical decoding device, comprising: an image sensor, configured to sense first sensing images and second sensing images; a processing circuit, configured to determine a relative movement between the optical decoding device and an object according to the first sensing images; and a decoding device, configured to decode the second sensing images in a first mode to generate a decoding result and does not decode the second sensing images in a second mode. The decoding device switches between the first mode and the second mode according to the relative movement, thus can save power. A barcode, a color code which can be provided on a curved surface and an invisible code are also disclosed. An electrical cigarette lighter using the optical decoding device to provide heat is also disclosed.

Abstract: A method of manufacturing a semiconductor device includes forming a photoresist layer over a substrate. A first precursor and a second precursor are combined. The first precursor is an organometallic having a formula: MaRbXc, where M is one or more of Sn, Bi, Sb, In, and Te, R is one or more of a C7-C11 aralkyl group, a C3-C10 cycloalkyl group, a C2-C10 alkoxy group, and a C2-C10 alkylamino group, X is one or more of a halogen, a sulfonate group, and an alkylamino group, and 1?a?2, b?1, c?1, and b+c?4, and the second precursor is one or more of water, an amine, a borane, and a phosphine. The photoresist layer is selectively exposed to actinic radiation to form a latent pattern. The latent pattern is developed by applying a developer to the selectively exposed photoresist layer.

Abstract: A noise elimination device for a Class-D audio amplifier includes a residual signal detector and a multiplexer, wherein the multiplexer is electrically connected with a sigma-delta modulator (SDM) and a pulse width modulator (PWM) of the Class-D audio amplifier and the residual signal detector. The residual signal detector is configured to detect whether an input signal of the Class-D audio amplifier is residual. The multiplexer is configured to output zero data into the pulse width modulator when the residual signal detector detects that the input signal of the Class-D audio amplifier is residual.

Abstract: A pallet positioning method includes: defining a size parameter of a pallet; defining a pallet feature of the pallet according to the size parameter; obtaining an on-site image; defining a projection datum; calculating a projection plane coordinate based on the projection datum; transforming the on-site image to a perspective adjusted image according to the projection plane coordinate; obtaining a first pallet image in the perspective adjusted image according to the pallet feature; calculating an inclined angle of the first pallet image; rotating the first pallet image according to the inclined angle; obtaining a second pallet image; obtaining a position information of the pallet based on the second pallet image; and obtaining a three dimensional information of the pallet according to the inclined angle and the position information. A pallet positioning system is also disclosed.

Abstract: The present disclosure provides a display device. The display device includes: a display panel including an display area and a peripheral area surrounding the display area; a backlight module at a light incident side of the display panel; where the backlight module includes a backplane, a light guide plate and a plurality of light strips, the backplane includes a first polygonal bottom plate, and a plurality of first side plates connected to the first bottom plate at an edge of the first bottom plate, the light guide plate is located between the first bottom plate and the display panel, and the light strips are located between the first side plates and the light guide plate; and an assembly frame assembled to the display panel and the backlight module at an edge of the display panel and an edge of the backlight module.

Abstract: Methods, systems, and devices for wireless communications are described. A receiving device (such as user equipment (UE)) may receive a downlink grant including an indication to report channel state information. The receiving device may identify, based on the downlink grant, a number of channel state information processing units associated with reporting the channel state information, and may determine that an available number of channel state information processing units is less than the number of channel state information processing units. In some cases, the receiving device may allocate, based on the determining, a set of channel state information processing units including the available number of channel state information processing units and one or more additional channel state information processing units. The receiving device may then transmit the channel state information report based on the set of channel state information processing units.

Abstract: The invention discloses a plant thermo-sensitive male sterile gene mutant tms15 and uses thereof. The nucleotide sequence of the plant thermo-sensitive male sterile gene mutant tms15 is SEQ ID No. 1. The inventor screened the thermo sensitive genic male sterile mutant tms15 by EMS mutagenesis of Zhonghua 11, which showed a male sterile phenotype under high temperature conditions (>28° C.) and restored fertility under low temperature conditions (22˜24° C.). The cytological results shows that the sporogenous cells in tms15 plants proliferated excessively and the tapetum cells are also vacuolized abnormally under high temperature. The normal proliferation of sporogenous cells and the normal development of tapetal cells are restored to some extent after low temperature treatment.

Abstract: Methods, systems, and computer-readable storage media for receiving, by a cross-process scheduling engine executed within a cloud platform, work scenario metadata and sensitivity metadata, generating, by the cross-process scheduling engine, a lineage graph representing relationships between one or more of data and processes to be executed for a work scenario represented by the work scenario metadata, defining, by the cross-process scheduling engine, a set of tile segments for the work scenario based on the lineage graph and the sensitivity metadata, dispatching, by the cross-process scheduling engine, a first sub-set of tile segments for execution in a private deployment including one or more private nodes, and dispatching, by the cross-process scheduling engine, a second sub-set of tile segments for execution in a public deployment including one or more public nodes.

Abstract: A semiconductor structure includes a first pair of source/drain features (S/D), a first stack of channel layers connected to the first pair of S/D, a second pair of S/D, and a second stack of channel layers connected to the second pair of S/D. The first pair of S/D each include a first epitaxial layer having a first dopant, a second epitaxial layer having a second dopant and disposed over the first epitaxial layer and connected to the first stack of channel layers, and a third epitaxial layer having a third dopant and disposed over the second epitaxial layer. The second pair of S/D each include a fourth epitaxial layer having a fourth dopant and connected to the second stack of channel layers, and a fifth epitaxial layer having a fifth dopant and disposed over the fourth epitaxial layer. The first dopant through the fourth dopant are of different species.

Abstract: A method for fabricating high electron mobility transistor (HEMT) includes the steps of: forming a buffer layer on a substrate; forming a barrier layer on the buffer layer; forming a gate dielectric layer on the barrier layer; forming a work function metal layer on the gate dielectric layer; patterning the work function metal layer and the gate dielectric layer; forming a gate electrode on the work function metal layer; and forming a source electrode and a drain electrode adjacent to two sides of the gate electrode.