Abstract: A method and system for photopolymerization 3D printing is provided. The system includes a processing device, a micro light emitting diode (microLED) array including one or more individually addressable microLED emitters, and a printing component. The processing device is configured to determine one or more printing layers of an object. The microLED array is configured to generate light for each of the one or more printing layers. The printing component is configured to print the one or more printing layers. To generate the light for each of the one or more printing layers, the processing device is further configured to dynamically determine one or more microLED regions in the microLED array, determine one or more region printing parameters for each of the one or more microLED regions; and determine one or more control signals for the one or more individually addressable microLED emitters included in each of the one or more microLED regions based on the one or more region printing parameters.

Abstract: This disclosure provides a method for channel and interference measurement and a device. The method includes: receiving a first group of reference signal resources; and measuring a channel and an interference that are corresponding to at least one first reference signal resource in the first group of reference signal resources, where the channel and the interference that are corresponding to the first reference signal resource are measured based on quasi co-location QCL information of the first reference signal resource.

Abstract: In the embodiments of the present disclosure, additive manufacturing devices and methods are provided. The additive manufacturing device includes a light source, a building device, and a light scattering member. The light source is configured to provide light to cure photocurable resins. The building device includes a resin tank configured to store the photocurable resins. The building device has a building surface on which the photocurable resins are cured. The light scattering member is arranged between the light source and the building surface.

Abstract: An HEMT with a stair-like compound layer as a drain includes a first III-V compound layer. A second III-V compound layer is disposed on the first III-V compound layer. The composition of the first III-V compound layer and the second III-V compound layer are different from each other. A source electrode, a gate electrode and a drain electrode are disposed on the second III-V compound layer. The gate electrode is disposed between the source electrode and the drain electrode. A first P-type III-V compound layer is disposed between the drain electrode and the second III-V compound layer. The first P-type III-V compound layer is stair-like.

Abstract: The invention provides a compound of Formula I: or a pharmaceutically acceptable salt thereof as described herein. The invention also provides pharmaceutical compositions comprising a compound of Formula I, processes for preparing compounds of Formula I, therapeutic methods for treating the proliferation of the HIV virus, treating AIDS or delaying the onset of AIDS symptoms in a mammal using compounds of Formula I.

Abstract: A beam indication method and apparatus, a device, and a medium. The method includes: receiving beam indication information transmitted by a network-side device, where the beam indication information is used to indicate a plurality of pieces of beam information of a channel or a reference signal, and the plurality of pieces of beam information correspond to different transmission and reception point TRP identification information; and transmitting the channel or the reference signal according to the beam indication information.

Abstract: A given segment of computer code is obtained and modified to produce one or more inefficient versions of the given segment of computer code in comparison to the given segment of computer code. A code parse tree is generated for the given segment of computer code and each inefficient version of the given segment of computer code. Model embeddings are generated based on the generated code parse trees and a diffusion model is trained based on the generated model embeddings.

Abstract: A channel information determining method, a network device, and a terminal device are provided. The method includes: updating, activating, or indicating parameter information of a first channel or a first reference signal RS by using a media access control MAC control element CE command, where the parameter information of the first channel or the first reference signal RS is used for determining the parameter information of a second channel or a second RS under a preset condition; and the parameter information includes at least one of transmission configuration indicator TCI state information, spatial relation information, and path loss PL RS.

Abstract: A semiconductor structure includes a substrate, an insulating layer disposed on the substrate, an active layer disposed on the insulating layer and including a device region, and a charge trap layer in the substrate and extending between the insulating layer and the substrate and directly under the device region. The charge trap layer includes a plurality of n-type first doped regions and a plurality of p-type second doped regions alternately arranged and directly in contact with each other to form a plurality of interrupted depletion junctions.

Abstract: A method, computer system, and program product facilitate identification of error image labels in training data. The method comprises: evenly dividing a training dataset into N subsets, where the training dataset includes M data items each comprising a pair of image and its original image label; training a prediction model to label images by respectively using each of the N subsets as training data to generate N respective trained prediction models; respectively using each of the N trained prediction models trained by using one of the N subsets as training data to label the images in other N?1 subsets of the N subsets to generate N?1 prediction labels for each of the M images in the training dataset. For each image in the M data items, whether the original image label of the image is a potential error image label is based on the N?1 prediction labels of the image.

Abstract: A method for forming a high electron mobility transistor includes the steps of forming an epitaxial stack on a substrate; forming a gate structure on the epitaxial stack, wherein the gate structure comprises a semiconductor gate layer, a metal gate layer on the semiconductor gate layer, and a spacer on a top surface of the semiconductor gate layer and a sidewall of the metal gate layer; forming a passivation layer covering the epitaxial stack and the gate structure; forming an opening through the passivation layer on the gate structure to expose a portion of the spacer; and removing the spacer through the opening to form an air gap between the sidewall of metal gate layer, the top surface of the semiconductor gate layer and a sidewall of the passivation layer.

Abstract: A ceramic material includes zirconia toughened alumina (ZTA) doped with scandium (Sc) ions. ZTA can be further doped with other metal ions, and the other metal ions include cobalt (Co) ions, chromium (Cr) ions, zinc (Zn) ions, titanium (Ti) ions, manganese (Mn) ions, nickel (Ni) ions, or a combination thereof. The ceramic material can be used as a ceramic object, such as a wire bonding capillary, a heat dissipation plate, a denture tooth, orthopedic implants, direct bonded copper, or a high-temperature co-fired ceramic.

Abstract: A beam measurement method, a network-side device, a terminal device, and a storage medium are provided. The method includes: sending configuration information to a terminal device, where the configuration information includes information related to channel state information reference signal CSI-RS resources that are used for beam measurement on an unlicensed frequency band UFB; and sending the CSI-RS resource to the terminal device based on the configuration information, so that the terminal device performs beam measurement on the UFB based on the configuration information and the CSI-RS resource.

Abstract: A method for eliminating divot formation includes forming an isolation layer; forming a conduction layer which has an upper inclined boundary with the isolation layer such that the conduction layer has a portion located above a portion of the isolation layer at the upper inclined boundary; etching back the isolation layer; and etching back the conduction layer after etching back the isolation layer such that a top surface of the etched conduction layer is located at a level lower than a top surface of the etched isolation layer.

Abstract: A method is disclosed herein. The method includes: providing, by an electronic design automation (EDA), a trigger signal to an application programming interface (API); providing, by the API, first parameters associated with parameterized cells in a netlist of an integrated circuit (IC); adjusting, by the API, the first parameters to generate second parameters associated with the parameterized cells in the netlist of the IC; updating, by the API, the netlist of the IC according to the second parameters; and performing, by the EDA, a simulation according to the netlist.

Abstract: Embodiments of the present disclosure provide a transmission method and a device. The method includes: determining first spatial information; and receiving, in CSS and/or USS according to the first spatial information, a random access response message of a 2-step random access procedure triggered by beam failure recovery (BFR). The terminal can receive, in common search space and/or UE-specific search space, the random access response message of the 2-step random access procedure triggered by the beam failure recovery (BFR), so that reliability of a communications system can be improved.

Abstract: A high voltage semiconductor device includes a semiconductor substrate, an isolation structure, a gate oxide layer, and a gate structure. The semiconductor substrate includes a channel region, and at least a part of the isolation structure is disposed in the semiconductor substrate and surrounds the channel region. The gate oxide layer is disposed on the semiconductor substrate, and the gate oxide layer includes a first portion and a second portion. The second portion is disposed at two opposite sides of the first portion in a horizontal direction, and a thickness of the first portion is greater than a thickness of the second portion. The gate structure is disposed on the gate oxide layer and the isolation structure.

Abstract: Provided is a pharmaceutical composition comprising: (a) a cabazitaxel prodrug represented by Formula 1 or a pharmaceutical acceptable salt thereof, and (b) a cyclodextrin wherein R—O— is an ester group. Also provided is a method of treating a tumor in a subject in need thereof, comprising administering to the subject a therapeutically effective amount of the pharmaceutical composition.

Abstract: A beam information indication method includes receiving, by a terminal, a first command sent by a network side device, the first command being used to activate or indicate at least one unified transmission configuration indicator TCI state ID; and determining, by the terminal, a unified TCI state of a channel or a reference signal in a component carrier CC group based on the unified TCI state ID. A target unified TCI state ID in the at least one unified TCI state ID is associated with a target channel or a target reference signal in the CC group.

Abstract: A beam failure detection method and apparatus, a terminal, and a storage medium, pertaining to the field of communications technologies. The beam failure detection method of the embodiments of this application includes: performing, by a terminal, measurement based on a plurality of BFD RS sets, where the plurality of BFD RS sets respectively correspond to a plurality of pieces of target information, and at least one of control channels corresponding to the target information uses a unified transmission configuration indicator TCI state; and sending a BFRQ in a case that a measurement result of at least one BFD RS set meets a preset condition.