Abstract: The present disclosure provides a memory device, a semiconductor device, and a method of operating a memory device. A memory device includes a memory cell, a bit line, a word line, a select transistor, a fuse element, and a heater. The bit line is connected to the memory cell. The word line is connected to the memory cell. The select transistor is disposed in the memory cell. A gate of the select transistor is connected to the word line. The fuse element is disposed in the memory cell. The fuse element is connected to the bit line and the select transistor. The heater is configured to heat the fuse element.

Abstract: Disclosed are an unblocking apparatus for a furnace discharging pipe and a use method. The unblocking apparatus includes a rail, a rail car that may move along the rail, an unblocking drive mechanism arranged on the rail car, a heat-unblocking component, a cold-unblocking component, and a material receiving component that is used to receive a blocking material in the discharging pipe, and a drive end of the unblocking drive mechanism is detachably connected with one end of the heat-unblocking component and the cold-unblocking component respectively. The present application effectively handles different blockage situations of the furnace discharging pipe by connecting the unblocking drive mechanism with an unblocking rod capable of heat-unblocking and a drilling rod capable of cold-unblocking, thereby two modes of heat-unblocking and cold-unblocking are performed on the furnace discharging pipe; and the discharging pipe may be unblocked by a remote operation.

Abstract: A method for fabricating semiconductor device includes the steps of first forming a shallow trench isolation (STI) in a substrate, forming a gate structure on the STI and the substrate, forming a patterned mask on the STI and the gate structure, performing an etching process to remove part of the STI for forming a first trench adjacent to one side of the gate structure and a second trench adjacent to another side of the gate structure, and then forming a contact etch stop layer (CESL) on the gate structure and into the first trench and the second trench.

Abstract: A rapid shutdown system and a method for controlling the rapid shutdown system are provided. A disturbance is applied to a direct-current side of an inverter in the rapid shutdown system only when the inverter does not meet a starting condition, i.e., before the inverter starts. Once meeting the starting condition, the inverter normally operates. A shutdown device in the rapid shutdown system determines its state by determining whether the electrical signal at its output end meets the preset condition, and switches itself on or off in response to its determination.

Abstract: A method for forming a semiconductor device structure is provided. The semiconductor device includes forming nanowire structures stacked over a substrate and spaced apart from one another, and forming a dielectric material surrounding the nanowire structures. The dielectric material has a first nitrogen concentration. The method also includes treating the dielectric material to form a treated portion. The treated portion of the dielectric material has a second nitrogen concentration that is greater than the first nitrogen concentration. The method also includes removing the treating portion of the dielectric material, thereby remaining an untreated portion of the dielectric material as inner spacer layers; and forming the gate stack surrounding nanowire structures and between the inner spacer layers.

Abstract: A method for transmitting an uplink channel via multi-beams, a terminal device and a network-side device are disclosed. The method includes: receiving configuration information, where the configuration information includes a plurality of pieces of uplink beam information for the uplink channel; and the plurality of pieces of uplink beam information has an association relationship with a related parameter of the uplink channel.

Abstract: A method, computer program product, and computer system for generating and using a basic state layer. N task models are provided (N?2). Each task model was trained on a same pre-trained backbone model. Each task model includes M feature layers and a task layer (M?1). Each feature layer of each task model includes a parameter matrix that is different for the different models. An encoder-decoder model is trained. The encoder-decoder model includes sequentially: an input layer, an encoder, M hidden layers, a decoder, and an output layer. The encoder is a neural network that maps and compresses the parameter matrices in the input layer into the M hidden layers, which generates a basic state model. The decoder is a neural network that receives the basic state model as input and generates the output layer to be identical to the input layer.

Abstract: A device and a method for nondestructively detecting a transient characteristic of a conductive screw of a turbo-generator rotor are provided. The device includes a personal computer (PC), an extremely-steep pulse generator, an ultra-high-frequency double-isolation transformer, and a pulse emitting and coupling module, which are connected in sequence. The pulse emitting and coupling module is connected to a load. A synchronous pulse receiving non-inductive divider circuit synchronously receives a characteristic waveform from the load, and the synchronous pulse receiving non-inductive divider circuit is connected to an ultra-high-speed analog/digital (A/D) module through a nonlinear saturation amplifying circuit that amplifies a signal. The PC receives a signal from the ultra-high-speed A/D module. The load includes a positive or negative excitation lead loop that is in a 180° symmetrical and instantaneous short-circuit state and a rotor shaft.

Abstract: An automatic material changing and welding system for stamping materials includes a welding transfer sliding table and a welding platform. The automatic material changing device further includes a feeding system. The feeding system includes a double-head uncoiling machine, an automatic feeding machine and a flattening machine. The automatic material changing device is used for automatic feeding for a stamping machine. The system triggers a material changing signal through a sensor to control and integrate the welding transfer sliding table and the welding platform to act to execute a welding procedure, so that the stamping materials are in welding connection with new and old coiled materials through a welding connection plate to realize continuous production operation of an automated stamping production line.

Abstract: Embodiments of the present disclosure provide a resource configuration method and a device. The method includes: sending configuration information to a terminal device, where the configuration information is used to configure a target SRS resource in M SRS resource sets, and M is a positive integer greater than or equal to 2.

Abstract: Disclosed is a method and an apparatus NER-orientated Chinese clinical text data augmentation, and unannotated data and annotated data of label linearization processing through data preprocessing. A concealed part is predicted based on retained information by using the unannotated data and concealing part of information in text, and meanwhile an entity word-level discrimination task is introduced for pre-training of a span-based language model; and a plurality of decoding mechanisms are introduced in a fine-tune stage, a relationship between a text vector and text data is obtained based on the pre-trained span-based language model, linearized data with entity labels is converted into the text vector, and text generation is performed through forward decoding and reverse decoding in a prediction stage of a text generation model to obtain enhanced data with annotation information.

Abstract: Disclosed are a method for adjusting a signal of a display panel, a time controller integrated circuit, a display panel, and a storage medium. The method includes: converting first data into a first data voltage signal using a first data voltage, in response to a set condition being reached, sending the first data voltage signal to a chip on film integrated circuit, the chip on film integrated circuit identifies the first data voltage signal to obtain a second data; acquiring the second data from the chip on film integrated circuit, determining that the chip on film integrated circuit fails to identify the first data in response to the second data being different from the first data; and adjusting the first data voltage until a second data voltage signal converted from the first data using a second data voltage after adjustment being successfully identified by the chip on film integrated circuit.

Abstract: The invention relates to a logic control device of a serial peripheral interface, a master-slave system and a master-slave switchover method therefor. The logic control device is connected between N masters and M slaves, and define master-slave connection relationships between each of the masters and each of the slaves. Each of the master-slave connection relationship is that each of the masters and each of the slaves transmit information one-to-one at the same time, and includes connecting the logic control device between the masters and the slaves to form the master-slave system as well as the master-slave switchover method therefor.

Abstract: A temperature sensing device includes a substrate, a first reflective module, a first window cover, and a dual thermopile sensor. The first reflective module is disposed on the substrate, including a first mirror chamber with a narrow field of view (FOV), and the first reflective module focuses a thermal radiation from measured object to a first image plane in the first mirror chamber. The first window cover is disposed on the first reflective module, and the first window cover allows a selected band of the thermal radiation to pass through. The dual thermopile sensor is disposed on the substrate and located in the first mirror chamber, and the dual thermopile sensor senses a temperature data from the first image plane. Additional second reflective module, LED source plus pin hole with same FOV of dual thermopile sensor can illuminate the measured object for ease of placement of object to be heated.

Abstract: A method of fabricating a semiconductor device includes the following steps. A substrate is provided. A semiconductor channel layer is formed on the substrate. A semiconductor barrier layer is formed on the semiconductor channel layer. An etching process is performed to expose a portion of the semiconductor channel layer. A dielectric layer is formed to cover the semiconductor barrier layer and the exposed semiconductor channel layer. A first electrode is formed after forming the dielectric layer, where the first electrode includes a body portion and a vertical extension portion, the body portion is electrically connected to the semiconductor barrier layer, and a bottom surface of the vertical extension portion is lower than a top surface of the semiconductor channel layer.

Abstract: A rapid shutdown system and a method for controlling the rapid shutdown system are provided. For each of shutdown devices in the rapid shutdown system, an electrical signal disturbance is applied to a direct current bus connected to the shutdown device at least once within each pre-shutdown period of the shutdown device, by an inverter in the rapid shutdown system operating in a mode of limited power output. Then, the shutdown device samples its input parameter and/or output parameter and determines, based on the sampled input parameter and/or the sampled output parameter, whether the electrical signal disturbance applied to the direct current bus meets a preset condition. The shutdown device switches itself on or remains in an ON state in response to a determination result that the electrical-signal disturbance already meets the preset condition.

Abstract: The disclosure relates to a method, apparatus, readable medium, and electronic device for live stream interaction. The method includes: in accordance with displaying of a first control at a first target position of a live stream interface, obtaining a first duration during which a user watches the live stream interface; in accordance with a determination that the first duration is greater than or equal to a first predetermined duration threshold, switching the first control to a second control, and displaying the second control at a second target position of the live stream interface; and in response to a first operation command performed by the user on the second control, allocating a virtual resource to the user. In this way, interaction modes of a live stream room are enriched, and an activity level of the live stream room can be improved.

Abstract: The disclosure provides a motor and a motor assembling method. The motor includes a housing having a bottom and a wall portion extending from an edge of the bottom along an axial direction, and a lid connected to the housing on one side in the axial direction of the bottom of the housing. A surface on the one side in the axial direction of the bottom of the housing has a first connection surface. Housing portions on an inside and an outside in a radial direction of the first connection surface are respectively bent in opposite directions intersecting the first connection surface, which ensures sufficient working space when performing work for connecting the housing and the lid.

Abstract: A circuit board structure includes a carrier, a thin film redistribution layer disposed on the carrier, solder balls electrically connected to the thin film redistribution layer and the carrier, and a surface treatment layer. The thin film redistribution layer includes a first dielectric layer, pads, a first metal layer, a second dielectric layer, a second metal layer, and a third dielectric layer. A top surface of the first dielectric layer is higher than an upper surface of each pad. The first metal layer is disposed on a first surface of the first dielectric layer. The second dielectric layer has second openings exposing part of the first metal layer. The second metal layer extends into the second openings and is electrically connected to the first metal layer. The third dielectric layer has third openings exposing part of the second metal layer. The surface treatment layer is disposed on the upper surfaces.

Abstract: The present invention relates to a SCR catalytic article, comprising —a substrate and —a copper-containing small pore zeolite, having a crystal structure characterized by a decrease of unit cell volume upon sulfurization and desulfurization of less than ?3 as determined by an X-ray powder diffraction, wherein the sulfurization and desulfurization are carried out in accordance with the processes as described in the specification, and to an exhaust treatment system comprising the same. The present invention also relates to a method for determining whether a metal-promoted small pore zeolite is resistant to irreversible sulfur poisoning and a method for evaluating whether a metal-promoted small pore zeolite is qualified for resistance to irreversible sulfur poisoning.