Abstract: A method for fabricating a pellicle assembly for a lithography process includes providing a carrier. A membrane layer is fabricated over the carrier. A pellicle frame is attached to the membrane layer. The carrier is then separated from the membrane layer using a release treatment process.

Abstract: A method of manufacturing a mask includes depositing an end-point layer over a light transmitting substrate, depositing a phase shifter over the end-point layer, depositing a hard mask layer over the phase shifter, and removing a portion of the hard mask layer and a first portion of the phase shifter to expose a portion of the end-point layer. The end-point layer and the light transmitting substrate are transparent to a predetermined wavelength.

Abstract: A method includes loading a mask having a defect into a chamber. The defect of the mask is repaired by forming a repair feature in a repair region of the mask. The forming the repair feature includes irradiating the repair region of the mask with a radiation beam. The forming the repair feature further includes while irradiating the repair region, injecting a precursor gas into the chamber to form a first film of the repair feature on the repair region, and while irradiating the repair region, injecting a cleaning gas into the chamber. The cleaning gas reacts with an impurity material in the first film to transform the first film into a first cleaned film.

Abstract: A method includes loading a mask having a defect into a chamber. The defect of the mask is repaired by forming a repair feature in a repair region of the mask. The forming the repair feature includes irradiating the repair region of the mask with a radiation beam. The forming the repair feature further includes while irradiating the repair region, injecting a precursor gas into the chamber to form a first film of the repair feature on the repair region, and while irradiating the repair region, injecting a cleaning gas into the chamber. The cleaning gas reacts with an impurity material in the first film to transform the first film into a first cleaned film.

Abstract: A method of manufacturing a mask includes depositing an end-point layer over a light transmitting substrate, depositing a phase shifter over the end-point layer, depositing a hard mask layer over the phase shifter, and removing a portion of the hard mask layer and a first portion of the phase shifter to expose a portion of the end-point layer. The end-point layer and the light transmitting substrate are transparent to a predetermined wavelength.

Abstract: A method for repairing a mask includes receiving a mask having first and second defective regions. A first treatment is performed to the mask. After performing the first treatment, a first repair process is performed on the mask. The first defective region is repaired to form a first repaired defective region. A second treatment is performed to the mask, including the first repaired defective region. After performing the second treatment, a second repair process is performed on the mask. The second defective region is repaired to form a second repaired defective region.

Abstract: A method for fabricating a pellicle assembly for a lithography process includes providing a carrier. A membrane layer is fabricated over the carrier. A pellicle frame is attached to the membrane layer. The carrier is then separated from the membrane layer using a release treatment process.

Abstract: A semiconductor device fabrication method includes irradiating a first surface of a substrate with a radiation beam. While irradiating the first surface of the substrate, a precursor gas is introduced near the first surface to deposit a layer including a first material. The precursor gas is removed from near the first surface after the depositing the layer. After the removing the precursor gas and prior to forming another layer over the layer, while irradiating a second surface of the layer, a cleaning gas is introduced near the second surface of the layer to transform the first material into a second material.

Abstract: The present disclosure provides a method of repairing a mask. The method includes receiving a mask that includes a patterned feature, the patterned feature producing a phase-shift and having a transmittance; identifying a defect region on the mask; and forming a repair feature over the defect region on the mask, wherein forming the repair feature includes forming a first patterned material layer over the defect region and forming a second patterned material layer over the first patterned material layer to form the repair feature, the repair feature producing the phase-shift and having the transmittance.

Abstract: A method for fabricating a pellicle assembly includes forming a release layer over a carrier. A membrane layer is fabricated over the release layer. A pellicle frame is attached to the membrane layer. After attaching the pellicle frame to the membrane layer, a release treatment process is performed to the release layer to separate the carrier from the membrane layer. A pellicle assembly including the pellicle frame and the membrane layer attached to the pellicle frame is formed.

Abstract: A EUV mask comprises a low thermal expansion material (LTEM) substrate, a reflective multi-layer (ML) over the LTEM substrate, and a patterned absorber layer over the reflective ML. The reflective ML includes a defect. The EUV mask further comprises a mark associated with the defect. The mark is one of: a deposit over the patterned absorber layer at a distance offset from the defect, and a cavity into the patterned absorber layer in an area over the defect.

Abstract: The present disclosure relates to a method and apparatus for mitigating printable native defects in an extreme ultra violet (EUV) mask substrate. In some embodiments, the method is performed by identifying a printable native defect within an EUV mask substrate that violates one or more sizing thresholds. A first section of the EUV mask substrate including the printable native defect is removed to form a concavity within the EUV mask substrate. A multi-layer replacement section that is devoid of a printable native defect is inserted into the concavity.

Abstract: Any defects in the reflective coating or absorber layer of an EUV mask are problematic in transferring a pattern of the EUV mask to a wafer since they produce errors in integrated circuit patterns on the wafer. In this regard, a method of manufacturing an EUV mask is provided according to various embodiments of the present disclosure. According to the method of the present disclosure, the defects in the EUV mask can be detected and repaired with an defect-free multilayer body. A substantially defect-free EUV mask can be made in a cost benefit way accordingly, so as to overcome disadvantages mentioned above.

Abstract: A method of depositing a material on a surface is disclosed. The method includes focusing a radiation beam on the surface and introducing a precursor gas near the surface wherein the precursor gas forms the material on the surface upon radiation by the radiation beam. The method further includes introducing an assistant gas near the surface wherein the assistant gas produces nitric oxide radicals upon radiation by the radiation beam. The nitric oxide radicals facilitate the dissociation process of the precursor gas and reduce contaminants in the deposited material.

Abstract: A semiconductor device fabrication method includes irradiating a first surface of a substrate with a radiation beam. While irradiating the first surface of the substrate, a precursor gas is introduced near the first surface to deposit a layer including a first material. The precursor gas is removed from near the first surface after the depositing the layer. After the removing the precursor gas and prior to forming another layer over the layer, while irradiating a second surface of the layer, a cleaning gas is introduced near the second surface of the layer to transform the first material into a second material.

Abstract: The present disclosure provides a method of repairing a mask. The method includes receiving a mask that includes a patterned feature, the patterned feature producing a phase-shift and having a transmittance; identifying a defect region on the mask; and forming a repair feature over the defect region on the mask, wherein forming the repair feature includes forming a first patterned material layer over the defect region and forming a second patterned material layer over the first patterned material layer to form the repair feature, the repair feature producing the phase-shift and having the transmittance.

Abstract: Methods and tools for repairing a semiconductor mask are provided. The method includes steps of positioning the semiconductor mask within a repair chamber including a repair tool, supplying a first gas and a second gas into the repair chamber. The first gas includes a repair material for repairing a defect on the mask, and the second gas includes a polar gas and assists deposition of the repair material on the semiconductor mask. The method further includes steps of activating the repair tool such that the repair tool interacts with the first and second gases to deposit the repair material at the site of the defect to repair the semiconductor mask and removing the repaired semiconductor mask from the repair chamber. A dimension of the deposited repair material is less than about 32 nanometers.

Abstract: A method for fabricating a pellicle assembly includes forming a release layer over a carrier. A membrane layer is fabricated over the release layer. A pellicle frame is attached to the membrane layer. After attaching the pellicle frame to the membrane layer, a release treatment process is performed to the release layer to separate the carrier from the membrane layer. A pellicle assembly including the pellicle frame and the membrane layer attached to the pellicle frame is formed.

Abstract: Some embodiments of the present disclosure relate to a method for repairing a photomask pattern, comprising receiving a photomask with a first translucent material formed on a transparent substrate, which forms an incomplete version of the photomask pattern. Missing portions of the photomask pattern are detected by comparing the incomplete version of the photomask pattern to a complete version of the photomask pattern. After detecting the missing portions, the photomask pattern is completed by using a second translucent material, which is different than the first translucent material, to form the missing portions. The second translucent exhibits the same transmissive property as the first translucent material. Consequently, both the repaired and unrepaired portions of the pattern have the same transmissive properties with respect to attenuation and phase shifting of incident radiation to enhance pattern resolution in the repaired portion of the photomask pattern.

Abstract: The present disclosure relates to a method and apparatus for mitigating printable native defects in an extreme ultra violet (EUV) mask substrate. In some embodiments, the method is performed by identifying a printable native defect within an EUV mask substrate that violates one or more sizing thresholds. A first section of the EUV mask substrate including the printable native defect is removed to form a concavity within the EUV mask substrate. A multi-layer replacement section that is devoid of a printable native defect is inserted into the concavity.