Abstract: The present disclosure provides a method of repairing a mask. The method includes inspecting the mask using a mask inspection tool to identify a defect on a circuit pattern of the mask; repairing the defect using a mask repair tool to form a repaired pattern; forming a first group of diffraction images of the repaired pattern and a second group of diffraction images of a reference feature; and validating the mask by comparing the first group of diffraction images with the second group of diffraction images.

Abstract: The apparatus includes a probe tip configured to scan a substrate having a defect to attach the defect on the probe tip while scanning the substrate, a cantilever configured to integrate a holder holding at least one probe tip, a stage configured to secure the substrate, an electromagnetic radiation source configured to generate the electromagnetic radiation beam, and an electromagnetic radiation detector configured to receive the first electromagnetic radiation signal and the second electromagnetic radiation signal. A first electromagnetic radiation signal is generated while an electromagnetic radiation beam focuses on the probe tip. A second electromagnetic radiation signal is generated while the electromagnetic radiation beam focuses on the sample attached on the probe tip. A chemical analysis of the sample is executed by comparing a difference between the first electromagnetic radiation signal and the second electromagnetic radiation signal.

Abstract: A method for repairing masks includes performing a first repair process to a mask by etching unwanted opaque regions from the mask, applying a plasma passivation process to the mask, and performing a second repair process to the mask by etching away additional unwanted opaque regions.

Abstract: An apparatus and method for lithography patterning is disclosed. An exemplary method includes receiving a first mask. The method further includes receiving a defect map, the defect map identifying a defect region of a defect of the first mask. The method further includes preparing processing data, the processing data including pattern data of a semiconductor device and data associated with the defect region. The method further includes processing the first mask according to the processing data thereby forming a first portion of a pattern of the semiconductor device on the first mask, the first portion of the pattern excluding the defect region.