Patents by Inventor Yuan-Chih Chu
Yuan-Chih Chu has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20160223897Abstract: Any defects in the reflective coating or absorber layer of an EUV mask are problematic in transferring a pattern of the EUV mask to a wafer since they produce errors in integrated circuit patterns on the wafer. In this regard, a method of manufacturing an EUV mask is provided according to various embodiments of the present disclosure. According to the method of the present disclosure, the defects in the EUV mask can be detected and repaired with an defect-free multilayer body. A substantially defect-free EUV mask can be made in a cost benefit way accordingly, so as to overcome disadvantages mentioned above.Type: ApplicationFiled: August 6, 2015Publication date: August 4, 2016Inventor: Yuan-Chih CHU
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Patent number: 9400424Abstract: The present disclosure provides a method of repairing a mask. The method includes inspecting the mask using a mask inspection tool to identify a defect on a circuit pattern of the mask; repairing the defect using a mask repair tool to form a repaired pattern; forming a first group of diffraction images of the repaired pattern and a second group of diffraction images of a reference feature; and validating the mask by comparing the first group of diffraction images with the second group of diffraction images.Type: GrantFiled: April 16, 2015Date of Patent: July 26, 2016Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Fu-Sheng Chu, Yuan-Chih Chu
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Patent number: 9395632Abstract: The present disclosure relates to a method and apparatus for mitigating printable native defects in an extreme ultra violet (EUV) mask substrate. In some embodiments, the method is performed by providing an EUV mask substrate having a multi-layer coating disposed over a low thermal expansion material. The sizes of one or more native defects within the EUV mask substrate are measured and printable native defects having a measured size that violates one or more sizing thresholds are identified. A position at which a patterned absorber material is to be formed over the multi-layer coating is determined. The position minimizes a number printable native defects that interact with EUV radiation during an EUV lithography process. By mitigating a number of printable native defects violating the one or more sizing thresholds, the process window of an EUV reticle formed from the EUV mask substrate is improved.Type: GrantFiled: August 8, 2014Date of Patent: July 19, 2016Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.Inventors: Yen-Kai Huang, Hsun-Chuan Shih, Yuan-Chih Chu
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Publication number: 20160202605Abstract: A method for repairing a mask includes receiving a mask having first and second defective regions. A first treatment is performed to the mask. After performing the first treatment, a first repair process is performed on the mask. The first defective region is repaired to form a first repaired defective region. A second treatment is performed to the mask, including the first repaired defective region. After performing the second treatment, a second repair process is performed on the mask. The second defective region is repaired to form a second repaired defective region.Type: ApplicationFiled: March 21, 2016Publication date: July 14, 2016Inventors: Yen-Kai Huang, Yuan-Chih Chu
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Publication number: 20160178996Abstract: A EUV mask comprises a low thermal expansion material (LTEM) substrate, a reflective multi-layer (ML) over the LTEM substrate, and a patterned absorber layer over the reflective ML. The reflective ML includes a defect. The EUV mask further comprises a mark associated with the defect. The mark is one of: a deposit over the patterned absorber layer at a distance offset from the defect, and a cavity into the patterned absorber layer in an area over the defect.Type: ApplicationFiled: February 29, 2016Publication date: June 23, 2016Inventors: Hsun-Chuan Shih, Yuan-Chih Chu
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Publication number: 20160181094Abstract: A method of depositing a material on a surface is disclosed. The method includes focusing a radiation beam on the surface and introducing a precursor gas near the surface wherein the precursor gas forms the material on the surface upon radiation by the radiation beam. The method further includes introducing an assistant gas near the surface wherein the assistant gas produces nitric oxide radicals upon radiation by the radiation beam. The nitric oxide radicals facilitate the dissociation process of the precursor gas and reduce contaminants in the deposited material.Type: ApplicationFiled: December 23, 2014Publication date: June 23, 2016Inventors: Chia-Hao Yu, Yuan-Chih Chu
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Patent number: 9298085Abstract: A method for repairing a mask is disclosed. A mask, having at least one defect need to be repaired, is received. The mask includes a transmissive mask or a reflective mask. A location and size of the defect is determined. A repair hard mask (RHM) is formed over the mask. Various configuration of the RHM are disclosed. A repairing process is performed, with the RHM over the mask, to repair the defect.Type: GrantFiled: October 11, 2013Date of Patent: March 29, 2016Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Hsun-Chuan Shih, Yuan-Chih Chu
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Patent number: 9291890Abstract: A method for repairing a mask is disclosed. A mask, having multiple defective regions need to be repaired, is received. Locations and sizes of the defective regions are determined. A pre-repair-passivation-treatment (PRPT) is performed to form a passivation membrane over the mask. With the passivation membrane on the mask, a mask repair process is performed to the defective regions on the mask.Type: GrantFiled: October 11, 2013Date of Patent: March 22, 2016Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Yen-Kai Huang, Yuan-Chih Chu
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Patent number: 9274417Abstract: A method for lithography patterning is disclosed. An exemplary method includes receiving an IC design layout, the IC design layout having an IC pattern and receiving a mask, the mask having a defect. The method further includes making at least one mark on the mask in relation to the defect; positioning the IC design layout over the mask thereby covering the defect by the IC pattern; and patterning the mask with the IC design layout.Type: GrantFiled: September 18, 2013Date of Patent: March 1, 2016Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Hsun-Chuan Shih, Yuan-Chih Chu
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Publication number: 20150378251Abstract: The present disclosure relates to a method and apparatus for mitigating printable native defects in an extreme ultra violet (EUV) mask substrate. In some embodiments, the method is performed by providing an EUV mask substrate having a multi-layer coating disposed over a low thermal expansion material. The sizes of one or more native defects within the EUV mask substrate are measured and printable native defects having a measured size that violates one or more sizing thresholds are identified. A position at which a patterned absorber material is to be formed over the multi-layer coating is determined. The position minimizes a number printable native defects that interact with EUV radiation during an EUV lithography process. By mitigating a number of printable native defects violating the one or more sizing thresholds, the process window of an EUV reticle formed from the EUV mask substrate is improved.Type: ApplicationFiled: August 8, 2014Publication date: December 31, 2015Inventors: Yen-Kai Huang, Hsun-Chuan Shih, Yuan-Chih Chu
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Publication number: 20150261085Abstract: Some embodiments of the present disclosure relate to a method for repairing a photomask pattern, comprising receiving a photomask with a first translucent material formed on a transparent substrate, which forms an incomplete version of the photomask pattern. Missing portions of the photomask pattern are detected by comparing the incomplete version of the photomask pattern to a complete version of the photomask pattern. After detecting the missing portions, the photomask pattern is completed by using a second translucent material, which is different than the first translucent material, to form the missing portions. The second translucent exhibits the same transmissive property as the first translucent material. Consequently, both the repaired and unrepaired portions of the pattern have the same transmissive properties with respect to attenuation and phase shifting of incident radiation to enhance pattern resolution in the repaired portion of the photomask pattern.Type: ApplicationFiled: March 12, 2014Publication date: September 17, 2015Inventor: Yuan-Chih Chu
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Patent number: 9134602Abstract: Any defects in the reflective coating or absorber layer of an EUV mask are problematic in transferring a pattern of the EUV mask to a wafer since they produce errors in integrated circuit patterns on the wafer. In this regard, a method of manufacturing an EUV mask is provided according to various embodiments of the present disclosure. According to the method of the present disclosure, the defects in the EUV mask can be detected and repaired with an defect-free multilayer body. A substantially defect-free EUV mask can be made in a cost benefit way accordingly, so as to overcome disadvantages mentioned above.Type: GrantFiled: July 29, 2013Date of Patent: September 15, 2015Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.Inventor: Yuan-Chih Chu
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Publication number: 20150219988Abstract: The present disclosure provides a method of repairing a mask. The method includes inspecting the mask using a mask inspection tool to identify a defect on a circuit pattern of the mask; repairing the defect using a mask repair tool to form a repaired pattern; forming a first group of diffraction images of the repaired pattern and a second group of diffraction images of a reference feature; and validating the mask by comparing the first group of diffraction images with the second group of diffraction images.Type: ApplicationFiled: April 16, 2015Publication date: August 6, 2015Inventors: Fu-Sheng Chu, Yuan-Chih Chu
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Patent number: 9029050Abstract: The present disclosure provides a method of repairing a mask. The method includes inspecting the mask using a mask inspection tool to identify a defect on a circuit pattern of the mask; repairing the defect using a mask repair tool to form a repaired pattern; forming a first group of diffraction images of the repaired pattern and a second group of diffraction images of a reference feature; and validating the mask by comparing the first group of diffraction images with the second group of diffraction images.Type: GrantFiled: May 15, 2013Date of Patent: May 12, 2015Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Fu-Sheng Chu, Yuan-Chih Chu
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Publication number: 20150104733Abstract: A method for repairing a mask is disclosed. A mask, having at least one defect need to be repaired, is received. The mask includes a transmissive mask or a reflective mask. A location and size of the defect is determined. A repair hard mask (RHM) is formed over the mask. Various configuration of the RHM are disclosed. A repairing process is performed, with the RHM over the mask, to repair the defect.Type: ApplicationFiled: October 11, 2013Publication date: April 16, 2015Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Hsun Chuan Shih, Yuan-Chih Chu
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Publication number: 20150104732Abstract: A method for repairing a mask is disclosed. A mask, having multiple defective regions need to be repaired, is received. Locations and sizes of the defective regions are determined. A pre-repair-passivation-treatment (PRPT) is performed to form a passivation membrane over the mask. With the passivation membrane on the mask, a mask repair process is performed to the defective regions on the mask.Type: ApplicationFiled: October 11, 2013Publication date: April 16, 2015Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Yen-Kai Huang, Yuan-Chih Chu
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Publication number: 20150079500Abstract: A method for lithography patterning is disclosed. An exemplary method includes receiving an IC design layout, the IC design layout having an IC pattern and receiving a mask, the mask having a defect. The method further includes making at least one mark on the mask in relation to the defect; positioning the IC design layout over the mask thereby covering the defect by the IC pattern; and patterning the mask with the IC design layout.Type: ApplicationFiled: September 18, 2013Publication date: March 19, 2015Inventors: Hsun-Chuan Shih, Yuan-Chih CHU
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Publication number: 20150030970Abstract: Any defects in the reflective coating or absorber layer of an EUV mask are problematic in transferring a pattern of the EUV mask to a wafer since they produce errors in integrated circuit patterns on the wafer. In this regard, a method of manufacturing an EUV mask is provided according to various embodiments of the present disclosure. According to the method of the present disclosure, the defects in the EUV mask can be detected and repaired with an defect-free multilayer body. A substantially defect-free EUV mask can be made in a cost benefit way accordingly, so as to overcome disadvantages mentioned above.Type: ApplicationFiled: July 29, 2013Publication date: January 29, 2015Applicant: Taiwan Semiconductor Manufacturing Co., LTD.Inventor: Yuan-Chih Chu
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Patent number: 8921015Abstract: A method for repairing masks includes performing a first repair process to a mask by etching unwanted opaque regions from the mask, applying a plasma passivation process to the mask, and performing a second repair process to the mask by etching away additional unwanted opaque regions.Type: GrantFiled: February 1, 2013Date of Patent: December 30, 2014Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Yueh-Hsun Li, Yuan-Chih Chu
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Patent number: 8900777Abstract: An apparatus and method for lithography patterning is disclosed. An exemplary method includes receiving a first mask. The method further includes receiving a defect map, the defect map identifying a defect region of a defect of the first mask. The method further includes preparing processing data, the processing data including pattern data of a semiconductor device and data associated with the defect region. The method further includes processing the first mask according to the processing data thereby forming a first portion of a pattern of the semiconductor device on the first mask, the first portion of the pattern excluding the defect region.Type: GrantFiled: October 23, 2012Date of Patent: December 2, 2014Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventor: Yuan-Chih Chu