Abstract: A manufacturing method is applied to set a stackable chip package. The manufacturing method includes encapsulating a plurality of chips stacked with each other, disposing a lateral surface of the stacked chips having conductive elements onto a substrate, disassembling the substrate from the conductive elements when the stacked chips are encapsulated, and disposing a dielectric layer with openings on the stacked chips to align the openings with the conductive elements for ball mounting process.

Abstract: The present invention further provides a method for forming a semiconductor device, the method including: first, a target layer is provided, an etching stop layer is formed on the target layer, a top oxide layer is formed on the etching stop layer, afterwards, a first photoresist layer is formed on the top oxide layer, and a first etching process is then performed, to form a plurality of first trenches in the top oxide layer. Next, a second photoresist layer is formed on the top oxide layer, portion of the second photoresist layer fills in each first trench, a second etching process is then performed to form a plurality of second trenches in the top oxide layer, and using the remaining etching stop layer as a hard mask, a third etching process is performed to remove parts of the etching stop layer and parts of the target layer.

Abstract: A circuit that includes: a photodiode configured to absorb photons and to generate photo-carriers from the absorbed photons; a first MOSFET transistor that includes: a first channel terminal coupled to a first terminal of the photodiode and configured to collect a portion of the photo-carriers generated by the photodiode; a second channel terminal; and a gate terminal coupled to a first control voltage source; a first readout circuit configured to output a first readout voltage; a second readout circuit configured to output a second readout voltage; and a current-steering circuit configured to steer the photo-carriers generated by the photodiode to one or both of the first readout circuit and the second readout circuit.

Abstract: The present invention provides a method for forming a semiconductor device, comprising: first, a target layer is provided, an etching stop layer is formed on the target layer, afterwards, a first photoresist layer is formed on the etching stop layer, and a first etching process is then performed, to forma plurality of first trenches in the etching stop layer. Next, a second photoresist layer is formed on the etching stop layer, portion of the second photoresist layer fills in each first trench, a second etching process is then performed to form a plurality of second trenches in the etching stop layer, and using the remaining etching stop layer as a hard mask, a third etching process is performed to remove parts of the target layer.

Abstract: The present disclosure provides compositions comprising Ganoderma immunomodulatory protein or a recombinant thereof and a gel-forming agent. Also provided are methods for the treatment of chronic wounds, ulcers or sores, and methods using the compositions.

Abstract: Embodiments of the present disclosure relate to methods for defect inspection. After pattern features are formed in a structure layer, a dummy filling material having dissimilar optical properties from the structure layer is filled in the pattern features. The dissimilar optical properties between materials in the pattern features and the structure layer increase contrast in images captured by an inspection tool, thus increasing the defect capture rate.

Abstract: A stacked package structure has a metal casing, a stacked chipset, an encapsulation and a redistribution layer. The stacked chipset is adhered in the metal casing. The encapsulation is formed in the metal casing to encapsulate the stacked chip set, but a plurality of surfaces of the metal pads are exposed through the encapsulation. The redistribution layer is further formed on the encapsulation and electrically connects to the metal pads of the stacked chipset. Therefore, the stacked package structure includes the metal casing, so an efficiency of heat dissipation and structural strength are increased.

Abstract: Disclosed herein is a T-helper cell (“TH-GM” cell) that is regulated by IL-7/STAT5 and which secrete GM-CSF/IL-3. Also disclosed are methods and compositions for modulating TH-GM function for the treatment of, e.g., inflammatory disorders. Diagnostic and prognostic methods for specifically identifying TH-GM-mediated inflammatory disorders (e.g., rheumatoid arthritis), as distinct from and/or in addition to non-TH-GM-mediated (e.g., TNF-?-mediated) inflammatory disorders, are also provided.

Abstract: A method for fabricating semiconductor device includes the steps of: forming a first inter-metal dielectric (IMD) layer on a substrate; forming a first metal interconnection in the first IMD layer; removing part of the first IMD layer; forming a spacer adjacent to the first metal interconnection; forming a second IMD layer on the spacer and the first metal interconnection; and forming a second metal interconnection in the second IMD layer and on the spacer and the first metal interconnection.

Abstract: A method of manufacturing a semiconductor package includes: (1) providing a first passivation layer on a carrier; (2) patterning the first passivation layer to define a first hole; (3) disposing a first seed layer on the first hole; (4) disposing a first conductive layer on the first seed layer; (5) replacing the carrier with a second passivation layer; (6) patterning the second passivation layer to define a second hole exposing the first seed layer; and (7) disposing a second conductive layer on the exposed first seed layer through the second hole.

Abstract: An optical apparatus that includes: a semiconductor substrate formed from a first material, the semiconductor substrate including a first n-doped region; and a photodiode supported by the semiconductor substrate, the photodiode including an absorption region configured to absorb photons and to generate photo-carriers from the absorbed photons, the absorption region being formed from a second material different than the first material and including: a first p-doped region; and a second n-doped region coupled to the first n-doped region, wherein a second doping concentration of the second n-doped region is less than or substantially equal to a first doping concentration of the first n-doped region.

Abstract: External electrical connectors and methods of forming such external electrical connectors are discussed. A method includes forming an external electrical connector structure on a substrate. The forming the external electrical connector structure includes plating a pillar on the substrate at a first agitation level affected at the substrate in a first solution. The method further includes plating solder on the external electrical connector structure at a second agitation level affected at the substrate in a second solution. The second agitation level affected at the substrate is greater than the first agitation level affected at the substrate. The plating the solder further forms a shell on a sidewall of the external electrical connector structure.

Abstract: Embodiments of the present disclosure relate to methods for defect inspection. After pattern features are formed in a structure layer, a dummy filling material having dissimilar optical properties from the structure layer is filled in the pattern features. The dissimilar optical properties between materials in the pattern features and the structure layer increase contrast in images captured by an inspection tool, thus increasing the defect capture rate.

Abstract: Disclosed are methods and compositions for treating ore preventing a STAT5-mediated medical condition, e.g., rheumatoid arthritis, in a subject by administering to the subject a therapeutically effective amount of a compound, the compound being a STAT5 inhibitor, or a pharmaceutically acceptable salt of the STAT5 inhibitor, or a solvate of the STAT5 inhibitor, or a prodrug of the STAT5 inhibitor. In one example, the compound used in the methods and compositions is pimozide. In another example, the compound used in the methods and compositions is nicotinohydrazide.

Abstract: A mounting rack with circuit includes a leadframe, a molding seat and a circuit layer. The leadframe comprises a plurality of electrodes. The molding seat is arranged on the leadframe and has a cup body to expose backsides of the electrodes and a cup opening to expose front sides of the electrodes. The circuit layer is arranged on the cup body and at least comprises two conductive parts, two electrical-connection parts and two soldering pads, wherein the two electrical-connection parts are arranged on the cup opening, one end of each of the two electrical-connection parts is electrically connected to one end of a respective one of the two conductive parts, the two soldering pads are arranged on bottom of the cup body, each of the two soldering pads is electrically connected to the other end of a respective one of the two conductive parts.

Abstract: The driving apparatus for driving a touch display panel includes a first voltage generating circuit configured to generate a common reference voltage, a second voltage generating circuit configured to generate a touch driving signal, and a control circuit configured to generate a switching signal. The switching signal is at the first voltage level during display periods for providing the common reference voltage to the touch display panel. The switching signal is at the second voltage level during touch periods for providing the touch driving signal to the touch display panel. A first touch display period includes a first display period a first touch period adjacent to the first display period. A second touch display period includes a second display period and a second touch period adjacent to the second display period. The first touch display period and the second touch display period are different in time length.

Abstract: An apparatus includes a slicer circuit, a frequency acquisition circuit, a phase acquisition circuit and an oscillator circuit. The slicer circuit may be configured to (i) generate an output signal by slicing a data signal in response to a clock signal and (ii) generate a crossing signal in response to the data signal and the clock signal. The frequency acquisition circuit may be configured to generate a first control signal and a second control signal in response to the data signal and the clock signal. The phase acquisition circuit may be configured to generate a third control signal in response to the first control signal and the data crossing signal. The oscillator circuit may be configured to generate the clock signal in response to the second control signal and the third control signal. The second control signal may shift an adjustable frequency range of the clock signal.

Abstract: External electrical connectors and methods of forming such external electrical connectors are discussed. A method includes forming an external electrical connector structure on a substrate. The forming the external electrical connector structure includes plating a pillar on the substrate at a first agitation level affected at the substrate in a first solution. The method further includes plating solder on the external electrical connector structure at a second agitation level affected at the substrate in a second solution. The second agitation level affected at the substrate is greater than the first agitation level affected at the substrate. The plating the solder further forms a shell on a sidewall of the external electrical connector structure.

Abstract: The disclosure provides a method of inhibiting proliferation of a cell, inhibiting m3C formation in a cell, inhibiting activity of Mettl8 in a cell, or activating ATM and p53 in a cell, the method comprising contacting the cell with a Mettl8 inhibitor. The disclosure also provides a composition comprising a cell with a reduced expression or activity of Mettl8. In another aspect, the disclosure provides methods of rendering a tumor cell sensitive to a cancer therapy.

Abstract: A circuit that includes: a photodiode configured to absorb photons and to generate photo-carriers from the absorbed photons; a first MOSFET transistor that includes: a first channel terminal coupled to a first terminal of the photodiode and configured to collect a portion of the photo-carriers generated by the photodiode; a second channel terminal; and a gate terminal coupled to a first control voltage source; a first readout circuit configured to output a first readout voltage; a second readout circuit configured to output a second readout voltage; and a current-steering circuit configured to steer the photo-carriers generated by the photodiode to one or both of the first readout circuit and the second readout circuit.