Abstract: A method for forming a thin film transistor on a substrate is disclosed. A gate electrode and a gate insulation layer are disposed on a surface of the substrate. A deposition process is performed by utilizing hydrogen diluted silane to form a silicon-contained thin film on the gate insulation layer first. A hydrogen plasma etching process is thereafter performed. The deposition process and the etching process are repeated for at least one time to form an interface layer. Finally, an amorphous silicon layer, n+ doped Si layers, a source electrode, and a drain electrode are formed on the interface layer.

Abstract: A dual view display structure and a method for producing the same are provided. First, a display panel is provided. Then, a patterned barrier layer is formed on a transparent substrate. The transparent substrate with the patterned barrier layer is attached to the display panel. Because there is a gap between the display panel and the patterned barrier layer, a liquid transparent material is injected into the gap to form a transparent material layer to fill the gap. The invention can not only increase the viewing angles of the dual view display, but also increase the production yield.

Abstract: A method of forming a thin film transistor (TFT) array panel, comprising the steps of: (i) forming a patterned first conductive layer, which includes a gate line and a shielding portion, on a substrate, (ii) forming a gate insulating layer on the patterned first conductive layer and the substrate, (iii) forming a patterned semiconductor layer on the gate insulating layer, (iv) forming a patterned second conductive layer, which includes a source electrode, and a drain electrode on the patterned semiconductor layer, and a data line that is electrically connected to the source electrode, (v) forming a patterned passivation layer on the patterned second conductive layer and the substrate, and (vi) forming a patterned transparent conductive layer on the patterned passivation layer.

Abstract: A photo detector has a sensing TFT (thin film transistor) and a photodiode. The sensing TFT has a gate and a base. The photodiode has an intrinsic semiconductor region electrically connected to the gate and the base of the sensing TFT. The sensing TFT and the photodiode both have a structure comprising low temperature poly-silicon. A display panel contains the photo detector is also disclosed.

Abstract: A photo detector is disclosed. The photo detector includes a substrate, a first patterned semiconductor layer with a first state, a dielectric layer, a patterned conductive layer, an inter-layer dielectric, a second patterned semiconductor layer with a second state, two first electrodes disposed on the inter-layer dielectric and two second electrodes disposed on portions of the second semiconductor layer. The first patterned semiconductor layer having a first doping region and a second doping region is disposed on a transistor region of the substrate. The dielectric layer is disposed to cover the substrate and the first semiconductor layer, the patterned conductive layer is disposed on the dielectric layer, and the inter-layer dielectric having at least two openings adapted to expose the first doping region and the second doping region is disposed to cover the dielectric layer.

Abstract: An optical compensation film includes an optical film and a retardation film. The optical film provides a plate retardation in the direction of thickness (Rth), while the retardation film is disposed on the optical film. The retardation film includes first retarders and second retarders, wherein the first retarders are disposed on at least partial areas of the optical film and provide a first planar retardation (Ro1); the second retarders are disposed on partial areas of the optical film but outside the first retarders and provide a second planar retardation (Ro2) and the first planar retardation (Ro1) is different from the second planar retardation (Ro2). The above-mentioned optical compensation film is capable of compensating the displays for different display areas in a liquid crystal display panel. In addition, the present invention also provides a fabricating method of optical compensation film.

Abstract: An ink composition for producing a color filter is provided. The ink composition comprises a colorant, a binder and plural solvents. A color filter production method using the above-mentioned ink composition is also provided. The ink composition is adhered to the designated light transmitting regions on the surface of a transparent substrate. Then, the ink composition adhered to the designated light transmitting regions is solidified.

Abstract: A thin film transistor (TFT) structure is provided. The TFT comprises a gate, a first electrode, a second electrode, a dielectric layer, and a channel layer. By overlapping the area between the first electrode and the gate, the TFT structure acquires a parasitic capacitor that is unaffected by manufacture deviations. Therefore, the TFT needs no compensation capacitor, thereby, increasing the aperture ratio of the TFT.

Abstract: A method for fabricating a thin film transistor is provided. A conductive layer is formed on a substrate. A patterned mask is formed on the conductive layer to cover a predetermined thin film transistor (TFT) area, and at least one portion of the conductive layer exposed by the patterned mask are removed. A laser is applied to form a laser hole in the patterned mask to expose a portion of the conductive layer and the laser hole substantially corresponds to a channel region of the predetermined TFT area. The exposed conductive layer is etched to form source and drain electrodes on opposite sides of the channel region.

Abstract: An electrode structure of a transistor, and a pixel structure and a display apparatus comprising the electrode structure of the transistor are disclosed. The electrode structure of the transistor comprises a first electrode and a second electrode. The first electrode has at least two first portions and at least one second portion. The first portions are substantially parallel with each other and each has a first width. The second portion has a second width, and connects the substantially parallel first portions to define a space with an opening. The first width is substantially greater than the second width.

Abstract: A thin film transistor array substrate structure. The array substrate structure includes a thin film transistor array substrate, an organic material layer formed thereon, and a plurality of black matrices and color filter patterns disposed on the organic material layer. The invention also provides a method of fabricating the thin film transistor array substrate.

Abstract: A dual-gate transistor includes a first gate formed on a substrate, a first dielectric layer covering the first gate and the substrate, a semiconductor layer formed on the first dielectric layer, first and second electrodes formed on the semiconductor layer and spaced with an interval in order to separate each other, a second dielectric layer covering the first and second electrodes, and a second gate formed on the second dielectric layer, in which at least one of the first and second gates is non-overlapped with the second electrode.

Abstract: A copper conducting wire structure is for use in the thin-film-transistor liquid crystal display (LCD) device. The copper conducting wire structure includes at least a buffer layer and a copper layer. A fabricating method of the copper conducting wire structure includes the following steps. At first, a glass substrate is provided. Next, the buffer layer is formed on the glass substrate. The buffer layer is comprised of a copper nitride. At last, the copper layer is formed on the buffer layer.

Abstract: A method for fabricating a thin film transistor is provided. A conductive layer is formed on a substrate. A patterned mask is formed on the conductive layer to cover a predetermined thin film transistor (TFT) area, and at least one portion of the conductive layer exposed by the patterned mask are removed. A laser is applied to form a laser hole in the patterned mask to expose a portion of the conductive layer and the laser hole substantially corresponds to a channel region of the predetermined TFT area. The exposed conductive layer is etched to form source and drain electrodes on opposite sides of the channel region.

Abstract: A thin film transistor array substrate structure. The array substrate structure includes a thin film transistor array substrate, an organic material layer formed thereon, and a plurality of black matrices and color filter patterns disposed on the organic material layer. The invention also provides a method of fabricating the thin film transistor array substrate.

Abstract: A copper conducting wire structure is for use in the thin-film-transistor liquid crystal display (LCD) device. The copper conducting wire structure includes at least a buffer layer and a copper layer. A fabricating method of the copper conducting wire structure includes the following steps. At first, a glass substrate is provided. Next, the buffer layer is formed on the glass substrate. The buffer layer is comprised of a copper nitride. At last, the copper layer is formed on the buffer layer.

Abstract: A method of forming a thin film transistor comprising a deposition procedure of a microcrystal material layer and performing a plasma treatment procedure. The deposition procedure and the plasma treatment procedure are repeated. A buffer layer is thus formed on the gate electrode.

Abstract: Fabrication methods for thin film transistors. A metal gate stack structure is formed on an insulating substrate. The substrate is performed using thermal annealing to create an oxide layer on the sidewalls of the metal gate stack structure. A gate insulating layer is formed on the substrate covering the metal gate stack structure. A semiconductor layer is formed on the gate insulating layer. A source/drain layer is formed on the semiconductor.

Abstract: A copper conducting wire structure is for use in the thin-film-transistor liquid crystal display (LCD) device. The copper conducting wire structure includes at least a buffer layer and a copper layer. A fabricating method of the copper conducting wire structure includes the following steps. At first, a glass substrate is provided. Next, the buffer layer is formed on the glass substrate. The buffer layer is comprised of a copper nitride. At last, the copper layer is formed on the buffer layer.

Abstract: A thin film transistor is characterized by having an island-in structure having a semiconductor layer with a channel region, a bottom heavily-doped semiconductor layer, and a top heavily-doped semiconductor layer. The bottom heavily-doped semiconductor layer is positioned on two opposite sides of the surface of the semiconductor layer beyond the channel region. The top heavily-doped semiconductor layer, positioned on the bottom heavily-doped semiconductor layer, covers two opposite side walls of the bottom heavily-doped semiconductor layer and the semiconductor layer so that current leakage from the drain electrode to the source electrode is prevented.