Abstract: The disclosure relates to a thin film transistor and a method for making the same. The thin film transistor includes a substrate; a gate on the substrate; a dielectric layer on the gate, wherein the dielectric layer includes a first sub-dielectric layer and a second sub-dielectric layer stacked on one another, and the first sub-dielectric layer is a first oxide dielectric layer formed by magnetron sputtering and in direct contact with the gate; a semiconductor layer on the dielectric layer, wherein the semiconductor layer includes nano-scaled semiconductor materials; and a source and a drain, wherein the source and the drain are on the dielectric layer, spaced apart from each other, and electrically connected to the semiconductor layer. The thin film transistor almost has no current hysteresis.

Abstract: The disclosure relates to a thin film transistor and a method for making the same. The thin film transistor includes a substrate; a semiconductor layer on the substrate, wherein the semiconductor layer includes nano-scaled semiconductor materials; a source and a drain, wherein the source and the drain are on the substrate, spaced apart from each other, and electrically connected to the semiconductor layer; a dielectric layer on the semiconductor layer, wherein the dielectric layer includes a first sub-dielectric layer and a second sub-dielectric layer stacked on one another, and the first sub-dielectric layer is a first oxide dielectric layer grown by magnetron sputtering; and a gate in direct contact with the first sub-dielectric layer. The thin film transistor almost has no current hysteresis.

Abstract: A thin film transistor includes a gate electrode, a insulating medium layer and at least one Schottky diode unit. The at least one Schottky diode unit is located on a surface of the insulating medium layer. The at least one Schottky diode unit includes a first electrode, a semiconductor structure and a second electrode. The semiconductor structure comprising a first end and a second end. The first end is laid on the first electrode, the second end is located on the surface of the insulating medium layer. The semiconducting structure includes a carbon nanotube structure. The second electrode is located on the second end.

Abstract: A thin film transistor includes a gate, an insulating medium layer and a Schottky diode. The Schottky diode includes a first electrode, a second electrode and a semiconducting structure. The first electrode is located on the surface of the insulating medium layer and includes a first metal layer and a second metal layer. The second electrode is located on the surface of the insulating medium layer and includes a third metal layer and a fourth metal layer. The semiconductor structure includes a first end and a second end. The first end is sandwiched by the first metal layer and the second metal layer, the second end is sandwiched by the third metal layer and the fourth metal layer. The semiconductor structure includes a carbon nanotube structure.

Abstract: A method of making microstructures, the method including: providing a first substrate, setting a photoresist layer on a surface of the first substrate; covering a surface of the photoresist layer with a photolithography mask plate, wherein the photolithography mask plate comprises a second substrate and a carbon nanotube composite layer located on a surface of the second substrate; exposing the photoresist layer to form an exposed photoresist layer by irradiating the photoresist layer through the photolithography mask plate with ultraviolet light; developing the exposed photoresist layer to obtain a patterned photoresist microstructures.

Abstract: The disclosure relates to a hydrophobic mirror. The hydrophobic mirror includes a support, a mirror body set in the support, and a hydrophobic film located on a surface of the mirror body. The hydrophobic film comprises a flexible substrate and a hydrophobic layer located on a surface of the flexible substrate. The hydrophobic layer comprises a base and a patterned bulge layer located on a surface of the base.

Abstract: The disclosure relates to a hydrophobic mirror. The hydrophobic mirror includes a support; a mirror body set in the support; and a hydrophobic film located on a surface of the mirror body. The hydrophobic film comprises a flexible substrate and a hydrophobic layer. The flexible substrate comprises a flexible base and a patterned first bulge layer located on a surface of the flexible base. The hydrophobic layer located on the surface of the patterned first bulge layer.

Abstract: The disclosure relates to a hydrophobic film according to one embodiment is provided. The hydrophobic film includes a flexible substrate and a hydrophobic layer on a surface of the flexible substrate. The hydrophobic layer comprises a base and a patterned bulge layer on a surface of the base.

Abstract: The disclosure relates to a hydrophobic window. The hydrophobic window includes a frame, a glass embedded in the frame, and a hydrophobic film on a surface of the glass. The hydrophobic film comprises a flexible substrate and a hydrophobic layer on a surface of the flexible substrate. The hydrophobic layer comprises a base and a patterned bulge layer on a surface of the base.

Abstract: The disclosure relates to a hydrophobic film according to one embodiment is provided. The hydrophobic film includes a flexible substrate and a hydrophobic layer. The flexible substrate comprises a flexible base and a patterned first bulge layer located on a surface of the flexible base. The hydrophobic layer is located on the surface of the patterned first bulge layer.

Abstract: The disclosure relates to a hydrophobic window. The hydrophobic window includes a frame; a glass embedded in the frame; and a hydrophobic film on a surface of the glass. The hydrophobic film comprises a flexible substrate and a hydrophobic layer. The flexible substrate comprises a flexible base and a patterned first bulge layer on a surface of the flexible base. The hydrophobic layer is on the surface of the patterned first bulge layer.

Abstract: A method of making carbon nanotube composite layer includes following steps. A first suspension having a number of semiconductor particles is formed. The number of semiconductor particles are deposited on a substrate. A second suspension comprising a number of carbon nanotubes is provided. The number of carbon nanotubes in the second suspension are deposited on the substrate with the number of semiconductor particles.

Abstract: The disclosure relates to a logic circuit. The logic circuit includes two ambipolar thin film transistors. Each of the two ambipolar thin film transistors includes a substrate; a semiconductor layer located on the substrate and including nano-scaled semiconductor materials; a source and a drain, wherein the source and the drain are located on the substrate, spaced apart from each other, and electrically connected to the semiconductor layer; a dielectric layer located on the substrate and covering the semiconductor layer, wherein the dielectric layer includes a normal dielectric layer and an abnormal dielectric layer stacked on one another, and the abnormal dielectric layer is an oxide dielectric layer grown by magnetron sputtering; and a gate in direct contact with the abnormal dielectric layer. The two ambipolar thin film transistors share the same substrate, the same gate, and the same drain.

Abstract: The disclosure relates to a method for detecting single molecules on an object. The method includes: providing a carrier; attaching the carrier on a surface of the object so that the surface of the object is indirect contact with the carrier; and detecting the single molecules on the object with a detector. The carrier includes a flexible substrate and a metal layer on the flexible substrate. The flexible substrate includes a base and a bulge pattern located on a surface of the base. The bulge pattern includes a number of strip-shaped bulges intersecting with each other to form a net and define a number of recesses. The metal layer is located on the bulge pattern. The carrier has a relative higher SERS and can enhance the Raman scattering.

Abstract: The disclosure relates to a logic circuit. The logic circuit includes a n-type thin film transistor and a p-type thin film transistor. Each thin film transistor includes a substrate; a semiconductor layer including nano-scaled semiconductor materials; a source and a drain, wherein the source and the drain are spaced apart from each other, and electrically connected to the semiconductor layer; a dielectric layer covering the semiconductor layer, wherein the dielectric layer includes a normal dielectric layer and an abnormal dielectric layer stacked on one another, and the abnormal dielectric layer is an oxide dielectric layer grown by magnetron sputtering; and a gate in direct contact with the abnormal dielectric layer. The n-type thin film transistor and the p-type thin film transistor share the same substrate and the same gate.

Abstract: The disclosure relates to a touch panel. The touch panel includes a substrate having a surface, a metal nanowire film, at least one electrode, and a conductive trace. The metal nanowire film includes a metal nanowire film. The metal nanowire film includes a number of first metal nanowire bundles parallel with and spaced from each other. Each of the number of first metal nanowire bundles includes a number of first metal nanowires parallel with each other. The first distance between adjacent two of the number of first metal nanowires is less than the second distance between adjacent two of the number of first metal nanowire bundles.

Abstract: A Schottky diode includes an insulating substrate and at least one Schottky diode unit. The at least one Schottky diode unit is located on a surface of the insulating substrate. The at least one Schottky diode unit includes a first electrode, a semiconductor structure and a second electrode. The semiconductor structure comprising a first end and a second end. The first end is laid on the first electrode; the second end is located on the surface of the insulating substrate. The semiconducting structure is nano-scale semiconductor structure. The second electrode is located on the second end.

Abstract: A Schottky diode includes an insulating substrate and at least one Schottky diode unit. The at least one Schottky diode unit is located on a surface of the insulating substrate. The at least one Schottky diode unit includes a first electrode, a semiconductor structure and a second electrode. The semiconductor structure comprising a first end and a second end. The first end is laid on the first electrode, the second end is located on the surface of the insulating substrate. The semiconducting structure is nano-scale semiconductor structure. The second electrode is located on the second end.

Abstract: A carrier for single molecule detection is related. The carrier includes a substrate; a middle layer, on the substrate; and a metal layer, on the middle layer; wherein the substrate is a flexible substrate, the middle layer includes a base and a patterned bulge on the base, the patterned bulge includes a plurality of strip-shaped bulges, the metal layer is on the patterned bulge.

Abstract: A molecular detection device is related. The device includes a carrier, a detector and a control computer. The carrier includes a substrate, a middle layer and a metal layer. The middle layer is sandwiched between the substrate and the middle layer. The detector is configured to detect molecules on a surface of the carrier. The control computer is connected to the detector and configured to analyze a detection result. The middle layer includes a base and a patterned bulge on the base, and the patterned bulge includes a plurality of strip-shaped bulges, the metal layer is on the patterned bulge.