Abstract: A method for making a metal oxide semiconductor carbon nanotube thin film transistor circuit. A p-type carbon nanotube thin film transistor and a n-type carbon nanotube thin film transistor are formed on an insulating substrate and stacked with each other. The p-type carbon nanotube thin film transistor includes a first semiconductor carbon nanotube layer, a first drain electrode, a first source electrode, a functional dielectric layer, and a first gate electrode. The n-type carbon nanotube thin film transistor includes a second semiconductor carbon nanotube layer, a second drain electrode, a second source electrode, a first insulating layer, and a second gate electrode. The first drain electrode and the second drain electrode are electrically connected with each other. The first gate electrode and the second gate electrode are electrically connected with each other.

Abstract: The disclosure relates to a carrier for use in single molecule detection. The carrier includes a flexible substrate and a metal layer on the flexible substrate. The flexible substrate includes a base and a bulge pattern located on a surface of the base. The bulge pattern includes a number of strip-shaped bulges intersecting with each other to form a net and define a number of recesses. The metal layer is located on the bulge pattern. The carrier for use in single molecule detection has a relative higher SERS and can enhance the Raman scattering.

Abstract: The disclosure relates to a method for detecting single molecules on an object. The method includes: providing a carrier; attaching the carrier on a surface of the object so that the surface of the object is indirect contact with the carrier; and detecting the single molecules on the object with a detector. The carrier includes a flexible substrate and a metal layer on the flexible substrate. The flexible substrate includes a base and a bulge pattern located on a surface of the base. The bulge pattern includes a number of strip-shaped bulges intersecting with each other to form a net and define a number of recesses. The metal layer is located on the bulge pattern. The carrier has a relative higher SERS and can enhance the Raman scattering.

Abstract: A method for making carrier for use in single molecule detection is related. The method includes following steps: firstly, placing a middle layer on a substrate; secondly, providing a carbon nanotube composite structure, wherein the carbon nanotube composite structure includes a carbon nanotube structure and a protective layer coated on the carbon nanotube structure, the carbon nanotube structure includes a plurality of carbon nanotubes intersected with each other and defines a plurality of openings; thirdly, placing the carbon nanotube composite structure on a surface of the middle layer, wherein parts of the surface are exposed through the plurality of openings; fourthly, forming the patterned bulge by dry etching the middle layer using the carbon nanotube composite structure as a mask, wherein the patterned bulge includes a plurality of strip-shaped bulges intersected with each other; depositing the metal layer on the patterned bulge.

Abstract: The disclosure relates to a method for making carrier for use in single molecule detection. The method includes: providing a rigid substrate; coating a polymer layer on a surface of the rigid substrate, the polymer layer is in semisolid state; transferring a nano-scaled pattern of a template on a surface of the polymer layer by pressing the template on the surface of the polymer layer; obtaining a flexible substrate by removing the template; and applying a metal layer on the flexible substrate. The carrier for use in single molecule detection has a relative higher SERS and can enhance the Raman scattering.

Abstract: A method for detecting molecular is related. The method includes providing a sample, in which a sample surface is distributed with analyte molecules; providing a carrier including a substrate, a middle layer and a metal layer, in which the middle layer is sandwiched between the substrate and the metal layer, the middle layer includes a base and a patterned bulge on a surface of the base, the patterned bulge includes a plurality of strip-shaped bulges intersected with each other to form a net and define a number of holes, and the metal layer is on the patterned bulge; placing the carrier on the sample surface to make the metal layer being attached to the sample surface, in which parts of the analyte molecules are formed on the metal layer; detecting the analyte molecules on the metal layer with a detector.

Abstract: A carrier for use in single molecule detection is related. The carrier includes a substrate; a middle layer, on the substrate; and a metal layer, on the middle layer; wherein the substrate is a flexible substrate, the middle layer includes a base and a patterned bulge on the base, the patterned bulge includes a plurality of strip-shaped bulges, the metal layer is on the patterned bulge, the carrier further includes a carbon nanotube composite structure between the metal layer and the patterned bulge.

Abstract: A thin film transistor includes a gate, an insulating medium layer and a Schottky diode. The Schottky diode includes a first electrode, a second electrode and a semiconducting structure. The first electrode is located on the surface of the insulating medium layer and includes a first metal layer and a second metal layer. The second electrode is located on the surface of the insulating medium layer and includes a third metal layer and a fourth metal layer. The semiconductor structure includes a first end and a second end. The first end is sandwiched by the first metal layer and the second metal layer, the second end is sandwiched by the third metal layer and the fourth metal layer. The semiconductor structure includes a nano-scale semiconductor structure.

Abstract: A Schottky diode includes a first electrode, a second electrode and a semiconducting structure. The first electrode includes a first metal layer and a second metal layer. The second electrode includes a third metal layer and a fourth metal layer. The semiconductor structure includes a first end and a second end. The first end is sandwiched by the first metal layer and the second metal layer, the second end is sandwiched by the third metal layer and the fourth metal layer. The semiconductor structure is a nano-scale semiconductor structure.

Abstract: A metal oxide semiconductor carbon nanotube thin film transistor circuit includes a p-type carbon nanotube thin film transistor and an n-type carbon nanotube thin film transistor stacked on one another. The p-type carbon nanotube thin film transistor includes a first semiconductor carbon nanotube layer, a first drain electrode, a first source electrode, a functional dielectric layer, and a first gate electrode. The n-type carbon nanotube thin film transistor includes a second semiconductor carbon nanotube layer, a second drain electrode, a second source electrode, a first insulating layer, and a second gate electrode. The first drain electrode and the second drain electrode are electrically connected with each other. The first gate electrode and the second gate electrode are electrically connected with each other.

Abstract: A Schottky diode includes a first electrode, a second electrode and a semiconducting structure. The first electrode includes a first metal layer and a second metal layer. The second electrode includes a third metal layer and a fourth metal layer. The semiconductor structure includes a first end and a second end. The first end is sandwiched by the first metal layer and the second metal layer, the second end is sandwiched by the third metal layer and the fourth metal layer. The semiconductor structure includes a carbon nanotube structure.

Abstract: A method for making a metal oxide semiconductor carbon nanotube thin film transistor circuit. A p-type carbon nanotube thin film transistor and a n-type carbon nanotube thin film transistor are formed on an insulating substrate and stacked with each other. The p-type carbon nanotube thin film transistor includes a first semiconductor carbon nanotube layer, a first drain electrode, a first source electrode, a functional dielectric layer, and a first gate electrode. The n-type carbon nanotube thin film transistor includes a second semiconductor carbon nanotube layer, a second drain electrode, a second source electrode, a first insulating layer, and a second gate electrode. The first drain electrode and the second drain electrode are electrically connected with each other. The first gate electrode and the second gate electrode are electrically connected with each other.

Abstract: The disclosure relates to a device for single molecule detection. The device includes a chamber having an inputting hole and an outputting hole, a carrier including a substrate and a metal layer located on the substrate, a detection device, and a controlling computer. The carrier includes a substrate and a metal layer on the substrate, wherein the substrate includes a base and a patterned bulge located on a surface of the base, the patterned bulge includes a number of strip-shaped bulges intersected with each other to form a net and define a number of holes, and the metal layer is located on the patterned bulge. The carrier for single molecule detection has a relative higher SERS and can enhance the Raman scattering.

Abstract: The disclosure relates to a method for detecting single molecule. The method includes: providing a carrier; detection disposing a single molecule sample on the carrier, and detecting the single molecule sample with a detector. The carrier includes a substrate and a metal layer on the substrate, wherein the substrate includes a base and a patterned bulge located on a surface of the base, the patterned bulge includes a number of strip-shaped bulges intersected with each other to form a net and define a number of holes, and the metal layer is located on the patterned bulge. The method is more accurate because the carrier has a relative higher SERS and can enhance the Raman scattering.

Abstract: The disclosure relates to a carrier for single molecule detection. The carrier includes a substrate and a metal layer on the substrate, wherein the substrate includes a base and a patterned bulge located on a surface of the base, the patterned bulge includes a number of strip-shaped bulges intersected with each other to form a net and define a number of holes, and the metal layer is located on the patterned bulge. The carrier for single molecule detection has a relative higher SERS and can enhance the Raman scattering.

Abstract: The disclosure relates to a method for making a carrier for single molecule detection. The method includes: providing a substrate; providing a carbon nanotube composite structure having a number of micropores, wherein a number of carbon nanotubes are successively aligned and intersected to form the number of micropores; setting the carbon nanotube composite structure on a surface of the substrate; dry etching the substrate by using the carbon nanotube composite structure as a mask to form a patterned surface, wherein the patterned surface comprises a number of strip-shaped bulges intersected with each other; and applying a metal layer on the patterned surface. The method is simple and has high efficiency.

Abstract: The disclosure relates to a metal nanowire structure. The metal nanowire structure includes a substrate and a metal nanowire film located on the substrate. The metal nanowire film includes a number of first metal nanowires parallel with and spaced from each other. A width of each of the plurality of first metal nanowires is in a range from about 0.5 nanometers to about 50 nanometers. Each of the plurality of first metal nanowires is a solid structure and consists of metal material.

Abstract: A solar cell system includes a number of P-N junction cells, a number of inner electrodes, a first collecting electrode, a second collecting electrode and a reflector. The number of the P-N junction cells is M. M is equal to or greater than 2. The M P-N junction cells are arranged from a first P-N junction cell to an Mth P-N junction cell along the straight line. The P-N junction cells are arranged in series along a straight line. The number of the inner electrodes is M?1. At least one inner electrode includes a plurality of carbon nanotubes. A photoreceptive surface is parallel to the straight line. A reflector is located on an emitting surface opposite to the photoreceptive surface.

Abstract: The disclosure relates to a method for making gallium nitride (GaN) epitaxial layer by silicon substrate is related. The method includes: providing a silicon substrate; providing a carbon nanotube structure comprising a plurality of carbon nanotubes and defining a plurality of holes; forming the carbon nanotube structure on a surface of the silicon substrate so that portions of the silicon substrate are exposed; dry etching the silicon substrate using the carbon nanotube structure as mask to obtain a patterned silicon substrate having a pattern surface comprising a plurality of bulges; and growing the GaN epitaxial layer using the patterned silicon substrate as an epitaxial substrate.

Abstract: The disclosure relates to a touch panel. The touch panel includes a substrate having a surface, a metal nanowire film, at least one electrode, and a conductive trace. The metal nanowire film includes a metal nanowire film. The metal nanowire film includes a number of first metal nanowire bundles parallel with and spaced from each other. Each of the number of first metal nanowire bundles includes a number of first metal nanowires parallel with each other. The first distance between adjacent two of the number of first metal nanowires is less than the second distance between adjacent two of the number of first metal nanowire bundles.