Abstract: Provided herein is technology relating to identifying the binding locations of DNA-binding proteins and particularly, but not exclusively, to methods, systems, and kits that use affinity reagent-specific barcodes for simultaneously mapping the binding sites of multiple proteins in the same cell.

Abstract: A fabricating method of a high electron mobility transistor includes providing a substrate. Then, a channel layer, an active layer, a P-type group III-V compound material layer, a metal compound material layer, a hard mask material layer and a patterned photoresist are formed to cover the substrate. Later, a dry etching process is performed to etch the hard mask material layer and the metal compound material layer to form a hard mask and a metal compound layer by taking the patterned photoresist as a mask. During the dry etching process, a spacer generated by by-products is formed to surround the patterned photoresist, the hard mask and the metal compound layer. After the dry etching process, the P-type group III-V compound material layer is etched by taking the spacer and the patterned photoresist as a mask.

Abstract: An actuating device includes an actuator and a stationary portion. The actuator has at least one driving portion. The stationary portion is provided at an arbitrary position along the actuator such that the driving portion forms a first driving portion and a second driving portion. The first driving portion and the second driving portion can be provided with the same actuating ability or with different actuating abilities respectively by adjusting the position of the stationary portion.

Abstract: A phase shifter includes a first transistor and a second transistor. The first transistor includes a first gate terminal configured to receive a first voltage. The first transistor is configured to adjust at least a resistance or a first capacitance of the phase shifter responsive to the first voltage. The second transistor is coupled to the first transistor. The second transistor includes a second gate terminal configured to receive a second voltage. The second transistor is configured to adjust a second capacitance of the phase shifter responsive to the second voltage. The second gate terminal includes a first polysilicon portion and a second polysilicon portion extending in a first direction. The first polysilicon portion and the second polysilicon portion are positioned along opposite edges of an active region of the first transistor and the second transistor.

Abstract: A voltage-controlled oscillator (VCO) includes a power supply source, a voltage source, a reference voltage node, first and second transistors, each including a source terminal coupled to the reference voltage node, and first through fourth conductive structures. The first conductive structure includes a first terminal coupled to the power supply source, a first extending portion coupled between the first terminal and a drain terminal of the first transistor, and a second extending portion coupled between the first terminal and a drain terminal of the second transistor, and the second conductive structure includes a second terminal coupled to the voltage source, a third extending portion coupled in series with the third conductive structure between the second terminal and a gate of the first transistor, and a fourth extending portion coupled in series with the fourth conductive structure between the second terminal and a gate of the second transistor.

Abstract: A semiconductor device with a deep trench isolation and a shallow trench isolation includes a substrate. The substrate is divided into a high voltage transistor region and a low voltage transistor region. A deep trench is disposed within the high voltage transistor region. The deep trench includes a first trench and a second trench. The first trench includes a first bottom. The second trench extends from the first bottom toward a bottom of the substrate. A first shallow trench and a second shallow trench are disposed within the low voltage transistor region. A length of the first shallow trench is the same as a length of the second trench. An insulating layer fills in the first trench, the second trench, the first shallow trench and the second shallow trench.

Abstract: A semiconductor device includes a substrate including a well region of a first conductive type; a first gate electrode on the substrate; a second gate electrode on the substrate; a first doped region embedded within the well region and is of the first conductive type, a second doped region embedded within the well region and is of the first conductive type, and a third doped region embedded within the well region and is of the first conductive type; and a first interconnection structure electrically connecting the first gate electrode and the second gate electrode. The first doped region and the second doped region are on opposite sides of the first gate electrode.

Abstract: A segmental precast composite-material composite-slab composite beam and a construction method thereof are provided, relating to the technical field of bridge design and construction. The segmental precast composite-material composite-slab composite beam mainly includes a segmental precast orthotropic composite top slab, a web, a bottom slab, and a wet joint between segments. The orthotropic composite top slab is composed of an orthotropic slab and an ultra-high-performance concrete layer (UHPC), and the interface connection of the orthotropic slab and the UHPC structural layer is achieved by a shear key. The UHPC structural layer is superposed with the orthotropic slab in segments in a precast plant to form a composite-slab composite beam segment to be entirely transported, hoisted and assembled, and the connection of the UHPC structural layers between the segments is achieved by casting a transverse wet joint in place.

Abstract: A light box structure includes a bracket and a board. The bracket is in an arc shape and has a first surface and a second surface opposite to each other. The board has a plurality of magnetic positioning posts. The magnetic positioning posts have at least two different heights. The board is attracted and attached on the first surface of the bracket through the magnetic positioning posts.

Abstract: A band-pass filter (BPF) includes first and second windings. The first winding includes first and second terminals, a first outer extending portion extending from the first terminal, a second outer extending portion extending from the second terminal, and a first conductive structure configured to electrically connect the first and second outer extending portions to each other at a location opposite the first and second terminals. The second winding includes third and fourth terminals positioned between the first and second terminals, and a second conductive structure electrically connected to the third and fourth terminals and extending between the first conductive structure and each of the first and second outer extending portions.

Abstract: A monitor device is provided, including: a fixing seat, for fixing to a structure; a casing, with an accommodating space, upper end of the longitudinal axis of the casing rotatably connected to the fixing seat; a first optoelectronic device, disposed on the lower end of the casing; a second photoelectric device and a third photoelectric device, respectively rotatably disposed at a first position and a second position outside the casing; a transmission mechanism, disposed in the accommodating space of the casing, and the transmission mechanism including: an angle rotation mechanism, connected to the fixing seat to drive the casing to rotate in a first direction relative to the fixing seat; and a second angle rotation mechanism connected to and driving the first, the second and the third optoelectronic device to rotate synchronously in a second direction; wherein the first direction and the second direction are orthogonal to each other.

Abstract: A fabricating method of a high electron mobility transistor includes providing a substrate. Then, a channel layer, an active layer, a P-type group III-V compound material layer, a metal compound material layer, a hard mask material layer and a patterned photoresist are formed to cover the substrate. Later, a dry etching process is performed to etch the hard mask material layer and the metal compound material layer to form a hard mask and a metal compound layer by taking the patterned photoresist as a mask. During the dry etching process, a spacer generated by by-products is formed to surround the patterned photoresist, the hard mask and the metal compound layer. After the dry etching process, the P-type group III-V compound material layer is etched by taking the spacer and the patterned photoresist as a mask.

Abstract: The present invention discloses an ultra-high-throughput single cell sequencing method, the method of the present invention including: firstly performing intracellular reverse transcription by using a reverse transcription sequence, or firstly performing intranuclear transposition of a transposase-accessible chromatin genome sequence by using a specific molecular barcode transposase-embedded complex, then compartmentalizing one or more cells or nuclei with one molecular labeled microbead by microwell-plate technology or microfluidic technology, followed by lysis of the cells or nuclei under the action of a lysis buffer, ligation of the sequences with the molecular label sequence on the molecular labeled microbeads through bridge primers, and PCR amplification to obtain a large quantity of sequences for construction of cDNA sequencing library, and then performing high-throughput sequencing, where information of specific transcriptome/genome accessibility of millions of single cells can be obtained in one run o

Abstract: A fabricating method of a high electron mobility transistor includes providing a substrate. Then, a channel layer, an active layer, a P-type group III-V compound material layer, a metal compound material layer, a hard mask material layer and a patterned photoresist are formed to cover the substrate. Later, a dry etching process is performed to etch the hard mask material layer and the metal compound material layer to form a hard mask and a metal compound layer by taking the patterned photoresist as a mask. During the dry etching process, a spacer generated by by-products is formed to surround the patterned photoresist, the hard mask and the metal compound layer. After the dry etching process, the P-type group III-V compound material layer is etched by taking the spacer and the patterned photoresist as a mask.