Abstract: A fabricating method of a high electron mobility transistor includes providing a substrate. Then, a channel layer, an active layer, a P-type group III-V compound material layer, a metal compound material layer, a hard mask material layer and a patterned photoresist are formed to cover the substrate. Later, a dry etching process is performed to etch the hard mask material layer and the metal compound material layer to form a hard mask and a metal compound layer by taking the patterned photoresist as a mask. During the dry etching process, a spacer generated by by-products is formed to surround the patterned photoresist, the hard mask and the metal compound layer. After the dry etching process, the P-type group III-V compound material layer is etched by taking the spacer and the patterned photoresist as a mask.

Abstract: A semiconductor device is provided. The semiconductor device includes a substrate and a plurality of nanowires. The substrate has an upper surface. The nanowires are stacked on the upper surface of the substrate along a first direction. The nanowires include a triangle in a cross section, and the nanowires include a plane extending along a second direction, a first down-slant facet on a (111) plane, and a second down-slant facet on an additional (111) plane.

Abstract: A vessel pressure regulating system with a multidirectional control valve device includes: a pressure source; the multidirectional control valve device, which includes a housing, an actuation unit, and a working element, the housing having an interior space, an input port, and an output port, the input port being in communication with the pressure source, the actuation unit having a stationary portion and a driving portion, and the working element being controlled by the driving portion in order to open or close the output port; a vessel in communication with the output port; and a control unit for controlling the operation of the pressure source and of the driving portion. The vessel pressure regulating system enables a safety airbag of a vehicle or a similar device in a chair, bed, or the like to function effectively.

Abstract: The present disclosure provides a method of federated learning. A specific implementation solution includes: determining, for a current learning period, a target device for each task of at least one learning task to be performed, from a plurality of candidate devices according to a plurality of resource information of the plurality of candidate devices; transmitting a global model for the each task to the target device for the each task, so that the target device for the each task trains the global model for the each task; and updating, in response to receiving trained models from all target devices for the each task, the global model for the each task according to the trained models, so as to complete the current learning period. The present disclosure further provides an electronic device, and a storage medium.

Abstract: A method of cutting fins includes the following steps. A photomask including a snake-shape pattern is provided. A photoresist layer is formed over fins on a substrate. A photoresist pattern in the photoresist layer corresponding to the snake-shape pattern is formed by exposing and developing. The fins are cut by transferring the photoresist pattern and etching cut parts of the fins.

Abstract: An imaging optical system includes six lens elements which are, in order from an object side to an image side: a first lens element, a second lens element, a third lens element, a fourth lens element, a fifth lens element and a sixth lens element. Each of the six lens elements has an object-side surface facing toward the object side and an image-side surface facing toward the image side. At least one of the six lens elements is a freeform lens element, and at least one of the object-side surface and the image-side surface of the at least one freeform lens element is a freeform surface.

Abstract: A phase shifter includes a first transistor and a second transistor. The first transistor includes a first gate terminal configured to receive a first voltage. The first transistor is configured to adjust at least a resistance or a first capacitance of the phase shifter responsive to the first voltage. The second transistor is coupled to the first transistor. The second transistor includes a second gate terminal configured to receive a second voltage. The second transistor is configured to adjust a second capacitance of the phase shifter responsive to the second voltage. The second gate terminal includes a first polysilicon portion and a second polysilicon portion extending in a first direction. The first polysilicon portion and the second polysilicon portion are positioned along opposite edges of an active region of the first transistor and the second transistor.

Abstract: Semiconductor structures and methods for forming a semiconductor structure are provided. An active semiconductor region is disposed in a substrate. A gate is formed over the substrate. Source and drain regions of a transistor are formed in the active semiconductor region on opposite sides of the gate. The drain region has a first width, and the source region has a second width that is not equal to the first width.

Abstract: An oscillator includes a forward stage including first and second terminals and a transformer-coupled band-pass filter (BPF) coupled between the first and second terminals and including a coupling device between the first and second terminals, and a transformer including first and second windings in a metal layer of an IC. The first winding includes a first conductive structure coupled to the first terminal and a second conductive structure coupled to a voltage node, a third conductive structure including first and second extending portions connected to the first and second conductive structures. The second winding includes a fourth conductive structure including a third extending portion coupled to the voltage node, and a fourth extending portion coupled to the second terminal. The third extending portion is between the second conductive structure and the first extending portion, and the fourth extending portion is between the first conductive structure and the second extending portion.

Abstract: A transdermal permeation enhancing composition, consisting of 65 wt %-98 wt % of white vaseline and 2 wt %-35 wt % of wax substance. The wax substance is selected from one or more of light liquid paraffin and white beeswax. The transdermal permeation enhancing composition is used for improving the transdermal absorption effect of timolol.

Abstract: A differential oscillator includes a differential circuit and a transformer-coupled band-pass filter (BPF) coupled between first and second output nodes. The BPF includes a coupling device coupled between the output nodes and a transformer including first and second windings in a metal layer of an IC. The first winding includes first and second conductive structures coupled to the first output node and a voltage node, respectively, and a third conductive structure including first and second extending portions connected to the first and second conductive structures, respectively. The second winding includes a fourth conductive structure including a third extending portion coupled to the voltage node and a fourth extending portion coupled to the second output node. The third extending portion is between the second conductive structure and the first extending portion, and the fourth extending portion is between the first conductive structure and the second extending portion.

Abstract: An imaging lens assembly includes a total of six lens elements which are, in order from an object side to an image side: a first lens element, a second lens element, a third lens element, a fourth lens element, a fifth lens element and a sixth lens element. The first lens element has positive refractive power. The second lens element has negative refractive power. The fifth lens element has negative refractive power. The sixth lens element has an image-side surface being concave in a paraxial region thereof.

Abstract: A sealing structure including a first inner layer unit, a second inner layer unit, a first outer layer unit, and a second outer layer unit is provided. The second inner layer unit and the first inner layer unit are partially connected to each other through a connection manner, so as to form a gas delivery structure that includes a plurality of first stop barriers, a plurality of second stop barriers, and a runner. The second outer layer unit and the first outer layer unit are partially connected to each other through the connection manner, so as to form a first closed pattern, a second closed pattern, a plurality of interval patterns and a plurality of non-continuous patterns. Each of the plurality of first stop barriers and each of the plurality of second stop barriers are connected to one of the plurality of interval patterns respectively.

Abstract: A phase shifter includes an active region, a first and a second set of gates and a set of contacts. The active region extends in a first direction and is located at a first level. The first and second set of gates each extend in a second direction, overlap the active region and are located at a second level. The second set of gates are positioned along opposite edges of the active region, are configured to receive a first voltage, and are part of a first transistor. The first transistor is configured to adjust a first capacitance of the phase shifter responsive to the first voltage. The set of contacts extend in the second direction, are over the active region, are located at a third level, and are positioned between at least the second set of gates.

Abstract: An improved electric screwdriver switch, wherein the switch is installed in a push-down type electric screwdriver, the lower end of the electric screwdriver is provided with a screwdriver head, and its inside is provided with a thimble; the switch includes a structure base with an inner slot and a micro-switch with a touch rod; the inner slot is provided with a L-rod and a spring, and the micro-switch is electrically connected to the motor of the electric screwdriver; when the electric screwdriver presses down the screwdriver head, the inner thimble is linked, and the upper end of the thimble touches the lower end of the L-rod; the touch distance of the upper end of the L-rod and the touch rod on the micro-switch can determine that the motor drives the start/stop of the screwdriver head; the improved structure base is designed as a whole, it features the strong structure and high precision, it is not easy to loose after installation.

Abstract: In some embodiments, a differential oscillator includes a differential circuit coupled between a first output node and a second output node and a transformer-coupled band-pass filter (BPF). The transformer-coupled BPF is coupled between the first output node and the second output node and includes a coupling device and a transformer. The coupling device is coupled between the first output node and the second output node. The transformer includes a first winding coupled between the first output node and a voltage node and a second winding coupled between the second output node and the voltage node.