Abstract: A method for manufacturing a high electron mobility transistor device includes providing a substrate. A channel material, a barrier material, a polarization adjustment material and a conductive material are formed on the substrate. A hard mask layer is formed on the conductive material. The conductive material is patterned to form a conductive layer by using the hard mask layer as a mask. A plurality of protection layers is formed on sidewalls of the hard mask layer and the conductive layer. The polarization adjustment material is patterned to form a polarization adjustment layer by using the plurality of protection layers and the hard mask as masks. The plurality of protection layers is removed. A portion of the conductive layer is laterally removed to form a first gate conductive layer.

Abstract: A monitor device is provided, including: a fixing seat, for fixing to a structure; a casing, with an accommodating space, upper end of the longitudinal axis of the casing rotatably connected to the fixing seat; a first optoelectronic device, disposed on the lower end of the casing; a second photoelectric device and a third photoelectric device, respectively rotatably disposed at a first position and a second position outside the casing; a transmission mechanism, disposed in the accommodating space of the casing, and the transmission mechanism including: an angle rotation mechanism, connected to the fixing seat to drive the casing to rotate in a first direction relative to the fixing seat; and a second angle rotation mechanism connected to and driving the first, the second and the third optoelectronic device to rotate synchronously in a second direction; wherein the first direction and the second direction are orthogonal to each other.

Abstract: The present disclosure provides a semiconductor device and a method of manufacturing a semiconductor device. The semiconductor device comprises a substrate, a first gate electrode, a second gate electrode, a first doped region, a second doped region, a third doped region, and a first interconnection structure. The substrate comprises a well region of a first conductive type. The first and second gate electrodes are disposed on the substrate. The first, second, and third doped regions are embedded within the well region and are of the first conductive type. The first interconnection structure electrically connects the first gate electrode and the second gate electrode. The first doped region and the second doped region are disposed on opposite sides of the first gate electrode.

Abstract: A band-pass filter (BPF) includes first and second windings. The first winding includes first and second terminals, a first outer extending portion extending from the first terminal, a second outer extending portion extending from the second terminal, and a first conductive structure configured to electrically connect the first and second outer extending portions to each other at a location opposite the first and second terminals. The second winding includes third and fourth terminals positioned between the first and second terminals, and a second conductive structure electrically connected to the third and fourth terminals and extending between the first conductive structure and each of the first and second outer extending portions.

Abstract: An integrated circuit includes an inductor that includes a first set of conductive lines in a first metal layer, and is over a substrate, and a guard ring. The guard ring includes a first conductive line in a second metal layer, and extending in a first direction, a second conductive line extending in a second direction, and a first staggered line coupled between the first conductive line and the second conductive line. The first staggered line includes a second set of conductive lines in the second metal layer, and extends in the first direction, a third set of conductive lines in a third metal layer, and extends in the second direction, and a first set of vias coupling the second and third set of conductive lines together. All metal lines in the third metal layer that are part of the guard ring extend in the second direction.

Abstract: A semiconductor device includes a first magnetic tunneling junction (MTJ) and a second MTJ on a substrate, a passivation layer on the first MTJ and the second MTJ, and an ultra low-k (ULK) dielectric layer on the passivation layer. Preferably, a top surface of the passivation layer between the first MTJ and the second MTJ is lower than a top surface of the passivation layer directly on top of the first MTJ.

Abstract: A light box structure includes a bracket and a board. The bracket is in an arc shape and has a first surface and a second surface opposite to each other. The board has a plurality of magnetic positioning posts. The magnetic positioning posts have at least two different heights. The board is attracted and attached on the first surface of the bracket through the magnetic positioning posts.

Abstract: Methods, systems, and apparatus for identifying an adverse event. In one aspect, a method includes obtaining first patient data; applying a machine learning model to the first patient data to identify information indicative of a first adverse event in the first patient data, in which the machine learning model is configured to: identify one or more named entities present in the first patient data; identify information indicative of the first adverse event based on the identified named entities; and output annotated patient data; obtaining feedback data on the annotated patient data, in which the feedback data is usable to refine the machine learning model; applying the refined machine learning model to second patient data to identify information indicative of a second adverse event in the second patient data; and providing information indicative of the second adverse events identified in the second patient data.

Abstract: A method for fabricating semiconductor device includes the steps of: forming a first magnetic tunneling junction (MTJ) on a substrate; forming a first ultra low-k (ULK) dielectric layer on the first MTJ; performing a first etching process to remove part of the first ULK dielectric layer and form a damaged layer on the first ULK dielectric layer; and forming a second ULK dielectric layer on the damaged layer.

Abstract: An oscillator includes a forward stage including first and second terminals and a transformer-coupled band-pass filter (BPF) coupled between the first and second terminals and including a coupling device between the first and second terminals, and a transformer including first and second windings in a metal layer of an IC. The first winding includes a first conductive structure coupled to the first terminal and a second conductive structure coupled to a voltage node, a third conductive structure including first and second extending portions connected to the first and second conductive structures. The second winding includes a fourth conductive structure including a third extending portion coupled to the voltage node, and a fourth extending portion coupled to the second terminal. The third extending portion is between the second conductive structure and the first extending portion, and the fourth extending portion is between the first conductive structure and the second extending portion.

Abstract: A method for fabricating semiconductor device includes first forming a first magnetic tunneling junction (MTJ) and a second MTJ on a substrate, performing an atomic layer deposition (ALD) process or a high-density plasma (HDP) process to form a passivation layer on the first MTJ and the second MTJ, performing an etching process to remove the passivation layer adjacent to the first MTJ and the second MTJ, and then forming an ultra low-k (ULK) dielectric layer on the passivation layer.

Abstract: A method for treating and phosphatizing a metal board without using acid includes the following steps: performing a degreasing step to remove grease and dirt from a surface of the metal board with a degreasing agent; performing a blast-peening step by blasting and peening polygon blast-peening granules on the metal board through a centrifugal impeller to remove an oxidized layer; performing a washing step to clean remaining powders from the metal board after the blast-peening step; performing a phosphatizing step to form a protective phosphate coating on the metal board; performing another washing step to wash off remaining phosphatizing agents from the metal board; performing a rustproofing step to apply a rustproofing agent on the metal board; and performing a drying step to dry the metal board.

Abstract: The present disclosure discloses a mid-span axial force-free connecting device for an earth-anchored cable-stayed bridge and a method for mounting same. The mid-span axial force-free connecting device for an earth-anchored cable-stayed bridge includes an externally sleeved large steel box girder and an internally embedded small steel box girder. A plurality of bearing beams are arranged on the inner periphery of the externally sleeved large steel box girder. Transverse spherical bearings or vertical spherical bearings are arranged on the bearing beams. The internally embedded small steel box girder is fixedly supported in the externally sleeved large steel box girder through a plurality of transverse spherical bearings and vertical spherical bearings. In the same section, the transverse spherical bearings are symmetrically arranged, and the vertical spherical bearings are also symmetrically arranged.

Abstract: A cell layout design for an integrated circuit. In one embodiment, the integrated circuit includes a dual-gate cell forming two transistors connected with each other via a common source/drain terminal. The dual-gate cell includes an active region, two gate lines extending across the active region, at least one first gate via disposed on one or both of the two gate lines and overlapped with the active region, and second gate vias disposed on one or both of the two gate lines and located outside the active region.

Abstract: A semiconductor device includes a first magnetic tunneling junction (MTJ) and a second MTJ on a substrate, a passivation layer on the first MTJ and the second MTJ, and an ultra low-k (ULK) dielectric layer on the passivation layer. Preferably, a top surface of the passivation layer between the first MTJ and the second MTJ is lower than a top surface of the passivation layer directly on top of the first MTJ.

Abstract: A differential oscillator includes a differential circuit and a transformer-coupled band-pass filter (BPF) coupled between first and second output nodes. The BPF includes a coupling device coupled between the output nodes and a transformer including first and second windings in a metal layer of an IC. The first winding includes first and second conductive structures coupled to the first output node and a voltage node, respectively, and a third conductive structure including first and second extending portions connected to the first and second conductive structures, respectively. The second winding includes a fourth conductive structure including a third extending portion coupled to the voltage node and a fourth extending portion coupled to the second output node. The third extending portion is between the second conductive structure and the first extending portion, and the fourth extending portion is between the first conductive structure and the second extending portion.

Abstract: A federated computing method, an electronic device and a storage medium. Metadata to be processed is obtained from each participant based on a task identifier (ID) to be executed. n data slices corresponding to each participant are obtained by dividing the metadata, where n is a positive integer greater than 1. n data sets are generated based on the n data slices corresponding to each participant. n data processing services corresponding to the task ID are called to process each data set using each of the data processing services. A federated computing result corresponding to the task ID is determined based on a processing result of each of the data processing services.

Abstract: The present disclosure discloses a mid-span axial force-free connecting device for an earth-anchored cable-stayed bridge and a method for mounting same. The mid-span axial force-free connecting device for an earth-anchored cable-stayed bridge includes an externally sleeved large steel box girder and an internally embedded small steel box girder. A plurality of bearing beams are arranged on the inner periphery of the externally sleeved large steel box girder. Transverse spherical bearings or vertical spherical bearings are arranged on the bearing beams. The internally embedded small steel box girder is fixedly supported in the externally sleeved large steel box girder through a plurality of transverse spherical bearings and vertical spherical bearings. In the same section, the transverse spherical bearings are symmetrically arranged, and the vertical spherical bearings are also symmetrically arranged.

Abstract: A method for fabricating semiconductor device includes the steps of: forming a first magnetic tunneling junction (MTJ) on a substrate; forming a first ultra low-k (ULK) dielectric layer on the first MTJ; performing a first etching process to remove part of the first ULK dielectric layer and forming a damaged layer on the first ULK dielectric layer; and forming a second ULK dielectric layer on the damaged layer.