Abstract: A modular probe card assembly comprises a silicon substrate with probes modularly assembled on a main board. At least a socket is installed around silicon substrate and electrically connects to probe needles by a flexible printed wiring film. A plurality of detachable coaxial wires electrically connect sockets with the main board for achieving variability of connecting paths during manufacturing. Thus, the probe card assembly has the effect of adjustable amendment and is suitable for high speed testing.

Abstract: A multilayered packaging film having good antifog performance that is suitable for use in food packaging. The multilayered film comprises a nylon film having first and second surfaces; a silicone oil on the first surface of the nylon film; and a sealant film on the second surface of the nylon film, either directly or via an intermediate adhesive tie layer. An antifog composition is either contained within at least part of the sealant film or is coated on a surface of the sealant film opposite the nylon film. The silicone oil effectively blocks the migration of the antifog composition into the nylon film when the multilayered film is stored in roll form.

Abstract: The invention provides a novel amino acid, neo-tryptophan, as well as polypeptides containing this novel amino acid such as neurotensin analogs. In addition, the invention provides neo-tryptophan derivatives, serotonin-like neo-tryptophan derivatives, and polypeptides containing such derivatives. The invention also provides methods for making neo-tryptophan, neo-tryptophan derivatives, serotonin-like neo-tryptophan derivatives, and compositions containing these compounds. Further, the invention provides methods for inducing a neurotensin response in a mammal as well as methods for treating a mammal having a serotonin recognition molecule.

Abstract: A wafer level packaging process for making flip-chips and integrated circuits formed are proposed. The process comprises in turn, providing a wafer, forming a protective material, bumping the wafer, removing the protective material, probing the wafer, laser repairing, and dicing the wafer. The laser repairing step is after bumping step. The protective material such as photoresist or metal layer is filled into the depression portions above the fuses for temporary protection of the fuses during bumping.

Abstract: A wafer level packaging process for making flip-chips and integrated circuits formed are proposed. The process comprises in turn, providing a wafer, forming a protective material, bumping the wafer, removing the protective material, probing the wafer, laser repairing, and dicing the wafer. The laser repairing step is after bumping step. The protective material such as photoresist or metal layer is filled into the depression portions above the fuses for temporary protection of the fuses during bumping.

Abstract: A system and a method for avoiding waiting repair analysis for a semiconductor testing equipment are disclosed. The semiconductor testing equipment directly executes next functional test after transferring previous test data regardless of if repair analysis is completed or not. A repair analysis apparatus has a pre-analysis storage device with a larger capacity than the test storage device of the semiconductor testing equipment for off-line repair analysis, so that the semiconductor test is efficiently improved.

Abstract: A method and a system for performing memory repair analysis are provided. A merge circuit is connected between test storage device of semiconductor testing equipment and pre-analysis storage device of repair analysis apparatus. Prior to memory repair analysis process, data from a plurality of functional tests are merged as a functional test data with addresses of fail bits by the merge circuit, then stored in pre-analysis storage device for analyzing. Therefore, test time is reduced and test efficiency is improved.

Abstract: A laser engraving and coloring method for a golf club head using a laser beam to process on a titanium alloy surface. Processing conditions of the laser beam are laser frequency in the range of 7500-35000 Hz, current in the range of 14-17 A, power in the range of 25-45 W, moving speed in the range of 5-55 M/sec, and process route as an ellipse to thereby form various predetermined colors.

Abstract: A semiconductor wafer is disclosed for avoiding probed marks while testing. The wafer has a plurality of metal interconnects, each metal interconnect connecting underlying bonding pad, corresponding contact pad and test pad. Each contact pad being outer electrical connection terminal is connected in series by a metal interconnect between test pad and bonding pad, so that the section of the metal interconnect between bonding pad and contact pad enable be tested during probing the test pad. Furthermore, there is no probing mark on the contact pad.

Abstract: A semiconductor wafer is disclosed for avoiding probed marks while testing. The wafer has a plurality of metal interconnects, each metal interconnect connecting underlying bonding pad, corresponding contact pad and test pad. Each contact pad being outer electrical connection terminal is connected in series by a metal interconnect between test pad and bonding pad, so that the section of the metal interconnect between bonding pad and contact pad enable be tested during probing the test pad. Furthermore, there is no probing mark on the contact pad.

Abstract: The invention relates to dimeric compounds comprising two 5-amino-5,6,7,8-tetrahydroquinoline fragments joined together by a divalent linking group, processes for their preparation, intermediates for their preparation, pharmaceutical compositions containing such dimeric compounds and the use of such compounds as cholinesterase inhibitors and in the treatment of neurodegenerative diseases, such as Alzheimer's Disease and myasthenia gravis.

Abstract: The invention relates to dimeric compounds comprising two 5-amino-5,6,7,8-tetrahydroquinoline fragments joined together by a divalent linking group, processes for their preparation, intermediates for their preparation, pharmaceutical compositions containing such dimeric compounds and the use of such compounds as cholinesterase inhibitors and in the treatment of neurodegenerative diseases, such as Alzheimer's Disease and myasthenia gravis.

Abstract: A manufacturing process of semiconductor devices comprises providing at least a wafer, bumping the wafer, testing the wafer, laser repairing, and dicing.

Abstract: A method and a device for maintaining logic state stored in a storage device are described. For one embodiment, the device precharges at least two complimentary nodes in a storage device during the precharge cycle. During the evaluation cycle, the device receives an input data. After receipt of the input data, device stores at least one logic state at a storage node according to the input data. The device includes at least one conducting path to limit one store per each evaluation stage.

Abstract: The invention provides a novel amino acid, neo-tryptophan, as well as polypeptides containing this novel amino acid such as neurotensin analogs. In addition, the invention provides neo-tryptophan derivatives, serotonin-like neo-tryptophan derivatives, and polypeptides containing such derivatives. The invention also provides methods for making neo-tryptophan, neo-tryptophan derivatives, serotonin-like neo-tryptophan derivatives, and compositions containing these compounds. Further, the invention provides methods for inducing a neurotensin response in a mammal as well as methods for treating a mammal having a serotonin recognition molecule.

Abstract: The invention provides a novel amino acid, neo-tryptophan, as well as polypeptides containing this novel amino acid such as neurotensin analogs. In addition, the invention provides neo-tryptophan derivatives, serotonin-like neo-tryptophan derivatives, and polypeptides containing such derivatives. The invention also provides methods for making neo-tryptophan, neo-tryptophan derivatives, serotonin-like neo-tryptophan derivatives, and compositions containing these compounds. Further, the invention provides methods for inducing a neurotensin response in a mammal as well as methods for treating a mammal having a serotonin recognition molecule.

Abstract: Methods are disclosed for forming ultra-thin (.about.300-.ANG.), uniform and stoichiometric C54-titanium silicide with a Ti film thickness of 200-300 .ANG. using pulsed laser salicidation. The invention achieves this by preferably step-scanning from die to die, across the wafer using laser pulses with an optical fluence (laser energy) ranging from 0.1 to 0.2 J/cm.sup.2 for approximately 23 nanoseconds per pulse. The source of radiation can be a XeCl or KrF excimer laser, or one in which the laser's wavelength is chosen such that the laser energy is absorbed the most by the refractory metal, i.e. titanium (Ti), cobalt (Co) or nickel (Ni). The laser beam size is typically die-size or can be fine tuned to 1 to 100 .mu.m and can be optimized to reduce the intensity variation across the laser spot diameter. At each position between 1 to 100 pulses can be emitted on the wafer. Localized heating is possible with the ability to establish the ambient temperature at or below 200.degree. C.

Abstract: A process for curing low-k spin-on dielectric layers based on alkyl silsesquioxane polymers by laser scanning is described wherein curing is achieved by both photothermal and photochemical mechanisms. The layers are deposited by spin deposition, dried and cured by raster scanning with a pulsed laser at energies between 0.1 and 1 Joules/cm.sup.2. Because the laser causes heating of the layer, a nitrogen jet is applied in the wake of the scanning laser beam to rapidly cool the layer and to inhibit oxidation and moisture absorption. The laser induced heating also assists in the discharge of moisture and by-products of the polymerization process. The laser operates at wavelengths between 200 and 400 nm. Insulative layers such as silicon oxide are sufficiently transparent at these so that oxide segments overlying the polymer layer do not inhibit the curing process. Implementation of the laser scanning feature is readily incorporated into an existing spin-on deposition and curing tool.

Abstract: A method of stripping photoresist and polymer from a wafer after a dry etch of a nitrade or a polysilicon layer that immerses the wafer in a peroxydisulfate (S.sub.2 O.sub.8.sup.2-)/HCl wet bath and while the wafer is still immersed, irradiates the wafer with a UV laser. The method comprises: (a) forming an silicon nitride layer 24 and a photoresist pattern 28 over a semi conductor structure 10; (b) dry etching the silicon nitride layer 24 thus forming a polymer 30 over the photoresist pattern, and the silicon nitride layer, (c) Immersing the substrate, the photoresist pattern, the polymer 30 in a liquid bath 34 comprising (1) peroxydisulfate (S.sub.2 O.sub.8.sup.2-), (2) HCl, and (3) water; and irradiating the photoresist pattern 28 and polymer layer 30 with a UV laser thereby removing the photoresist 28 and polymer 30.

Abstract: An image encoder and subcarrier signal generator. The present invention uses a system clock signal to generate a first subcarrier signal and a second subcarrier signal with a phase-delay of 90.degree. behind the first subcarrier signal.