Abstract: The present invention relates to a mannanase PMan5A mutant having improved heat resistance, a gene encoding the mutant and application thereof. The mutant is obtained by a substitution of histidine with tyrosine at amino acid residue 93, phenylalanine with tyrosine at amino acid residue 94, leucine with histidine at amino acid residue 356, and/or alanine with proline at amino acid residue 389. The thermal tolerance of the single site mutation mutant H93Y, L356H and A389P are greatly improved over that of the wild-type mannanase PMan5A, and the thermal tolerance of the combination mutants shows the stack effect of the single site mutation, demonstrating the amino acids at the sites of 93, 94, 356, and 389 play an important role for the thermal stability of the mannanase of GH5 family.

Abstract: A flash memory storage apparatus includes a memory cell array and a voltage generating circuit. The memory cell array includes at least one memory cell string coupled between a bit line and a source line and including memory cells; each memory cell is coupled to a corresponding word line. The voltage generating circuit is coupled to the memory cell array and configured to output a bias voltage to the word line. A first voltage is applied to a selected word line. A second voltage and a third voltage are applied to unselected second and third word lines, respectively. The first voltage is greater than the second voltage, and the second voltage is greater than the third voltage. The second word line and the third word line are located on two sides of the first word line. A biasing method of a flash memory storage apparatus is also provided.

Abstract: Techniques for enhancing the absorption of photons in semiconductors with the use of microstructures are described. The microstructures, such as pillars and/or holes, effectively increase the effective absorption length resulting in a greater absorption of the photons. Using microstructures for absorption enhancement for silicon photodiodes and silicon avalanche photodiodes can result in bandwidths in excess of 10 Gb/s at photons with wavelengths of 850 nm, and with quantum efficiencies of approximately 90% or more.

Abstract: A method includes forming a dielectric cap over a semiconductor substrate; forming a dummy gate structure over the dielectric cap; forming gate spacers on opposite sidewalls of the dummy gate structure and on a top surface of the dielectric cap; removing the dummy gate structure to form a gate trench between the gate spacers and exposing the dielectric cap; and performing an ion implantation to form a doped region in the semiconductor substrate through the dielectric cap.

Abstract: An optical film includes a plurality of alternating first and second polymeric layers, such that the first polymeric layers have a smaller average in-plane index of refraction than the second polymeric layers and the first polymeric layers have a glass transition temperature of at least 107 deg. C. The optical film may be a reflective polarizer. An optical stack includes a linear absorbing polarizer and the reflective polarizer disposed on, and bonded to, the absorbing polarizer. The reflective polarizer has an optical reflectance of at least 60% for a first polarization state and an optical transmittance of at least 60% for an orthogonal second polarization state. When heated at 105 deg. C. for 15 minutes, a difference in shrinkage of the reflective polarizer and the absorbing polarizer along the first and second polarization states is greater than about zero and 0.2%, respectively.

Abstract: A data recognition apparatus and a recognition method are provided. The data recognition apparatus includes a data augmentation device, a feature extractor, and a comparator. The data augmentation device receives a plurality of target information and performs augmentation on each of the target information to generate a plurality of augmented target information. The feature extractor receives queried information and the augmented target information to extract features of the augmented target information and the queried information to respectively generate a plurality of augmented target feature values and a queried feature value. The comparator generates a recognition result according to the queried feature value and the augmented target feature values.

Abstract: Disclosed are a method and system for monitoring movement. The system includes: a muscle movement sensor, a movement capturing device and a processing device, wherein the muscle movement sensor is configured to acquire muscle movement information of a moving part of a living body in the case that the muscle movement sensor is fixed onto the moving part; the movement capturing device is configured to acquire whole movement information of the living body; and the processing device is configured to determine a movement parameter of a muscle of the moving part based on the muscle movement information and the whole movement information.

Abstract: A substrate processing apparatus is provided. The substrate processing apparatus includes a plurality of holding members and at least a first injector. The plurality of holding members are configured to hold a substrate. The substrate includes a front surface and a back surface opposite to the front surface. The first injector is below the holding members and is configured to face the back surface of the substrate. The first injector is displaced from a projection of a center of the substrate from a top view perspective. A method for processing a substrate is also provided.

Abstract: Provided are a method and apparatus for operating blockchain system, a device and a storage medium. The method is described below. To-be-processed blockchain data is processed through a kernel engine of a blockchain system, a kernel component call request is generated based on a kernel component interface during the processing process, and a kernel component is called according to the kernel component call request, where at least one kernel component is provided. The kernel component call request is executed through the kernel component to execute processing of a set component function and satisfy a processing requirement for the to-be-processed blockchain data.

Abstract: A method for fabricating an assemble substrate is provided, including stacking a circuit portion on a plurality of circuit members. The circuit members are spaced apart from one another in a current packaging process to increase a layer area. The assemble substrate thus fabricated meets the requirements for a packaging substrate of a large size, and has a high yield and low fabrication cost.

Abstract: The present invention relates to the field of agriculture biotechnology, specially relates to an amylase mutant having high specific activity and thermal stability, gene and use thereof. Said amylase mutant is obtained by performing substitution of S33A/S34E/V35H, and deletion of amino acids at the sites of 178 and 179 of the wild type amylase having amino acid sequence of SEQ ID NO:1, and having improved enzymatic activity and thermal stability than the wild type amylase.

Abstract: An electrical connector includes: an insulative housing having a row of slots defined by plural dividing walls thereof, and plural contacts secured in the insulative housing and each including a securing portion, a front contacting portion disposed in a corresponding slot, and a rear tail, wherein the plurality of dividing walls includes a group of first dividing walls each having a first length and a group of second dividing walls each having a second length along a front-to-back direction, and the first length is shorter than the second length to expose to air a larger extent of the front contacting portions of associated contacts disposed in the slots defined by the group of first dividing walls with respect to the front contacting portions of associated contacts disposed in the slots defined by the group of second dividing walls.

Abstract: A semiconductor device includes a substrate; a first thermoelectric conduction leg, disposed on the substrate, and doped with a first type of dopant; a second thermoelectric conduction leg, disposed on the substrate, and doped with a second type of dopant, wherein the first and second thermoelectric conduction legs are spatially spaced from each other but disposed along a common row on the substrate; and a first intermediate thermoelectric conduction structure, disposed on a first end of the second thermoelectric conduction leg, and doped with the first type of dopant.

Abstract: A method of forming a semiconductor device includes forming a first semiconductor strip protruding above a first region of a substrate and a second semiconductor strip protruding above a second region of the substrate, forming an isolation region between the first semiconductor strip and the second semiconductor strip, forming a gate stack over and along sidewalls of the first semiconductor strip and the second semiconductor strip, etching a trench extending into the gate stack and isolation regions, the trench exposing the first region of the substrate and the second region of the substrate, forming a dielectric layer on sidewalls and a bottom surface of the trench and filling a conductive material over the dielectric layer and in the trench to form a contact, where the contact extends below a bottommost surface of the isolation region.

Abstract: A wearable electronic device includes a body and a plug-in power supply. The body is provided with a first battery and a first induction coil or a connecting port electrically connected to the first battery. The plug-in power supply is provided with a carder for wearing the body on a wearer's wrist, at least one second battery disposed in the carder, and a second induction coil or a connector disposed in the carrier or extends outside the carrier and electrically connected to the second battery. The first battery absorbs electric power from the second battery when the second induction coil is coupled to the first induction coil or the connector is connected to the connecting port.

Abstract: A process deployment controller creates an updated image for an intermediary engine in order to execute one or more applications on a host infrastructure. The process deployment controller generates a partial image by executing source code from a template repository. The partial image provides a structure used to create an intermediary engine used with a container, which includes an application, as well as binaries and libraries required to execute the application in an infrastructure via the intermediary engine. The process deployment controller transmits an identifier of the infrastructure to a component registry; receives a component description of the infrastructure from the component registry; and uses the component description to create an updated image of the partial image. The process deployment controller, upon receiving a request for the application to run on the infrastructure, utilizes the updated image and intermediary engine to execute the application on the infrastructure.

Abstract: The application discloses a touch controller to determine a position where a user touches a touchscreen. The touchscreen includes a first transmitting electrode, a second transmitting electrode and a receiving electrode. The touch controller includes a signal generation module and a demodulation module. The signal generation module is configured to perform an in-phase code transmission at a first time so that the receiving electrode receives an in-phase code receiving signal correspondingly, and perform an inverting-phase code transmission at a second time so that the receiving electrode receives an inverting-phase code receiving signal correspondingly. The demodulation module is configured to determine the position where the user touches the touchscreen according to the in-phase code receiving signal corresponding to the first time and the inverting-phase code receiving signal corresponding to the second time.

Abstract: A semiconductor device includes a semiconductor fin. The semiconductor device includes a metal gate disposed over the semiconductor fin. The semiconductor device includes a gate dielectric layer disposed between the semiconductor fin and the metal gate. The semiconductor device includes first spacers sandwiching the metal gate. The first spacers have a first top surface and the gate dielectric layer has a second top surface, and the first top surface and a first portion of the second top surface are coplanar with each other. The semiconductor device includes second spacers further sandwiching the first spacers. The second spacers have a third top surface above the first top surface and the second top surface. The semiconductor device includes a gate electrode disposed over the metal gate.

Abstract: A medical image analysis method includes: reading an original medical image; performing image classification and object detection on the original medical image to generate a first classification result and a plurality of object detection results by a plurality of complementary artificial intelligence (AI) models; performing object feature integration and transformation on a first detection result and a second detection result among the object detection results to generate a transformation result by a features integration and transformation module; and performing machine learning on the first classification result and the transformation result to generate an image interpretation result by a machine learning module and display the image interpretation result.

Abstract: A semiconductor device includes a substrate, a channel stack, source/drain contacts, and a gate electrode. The channel stack is over the substrate and includes a 2D channel layer and a barrier layer. An energy band gap of the barrier layer is greater than an energy band gap of the 2D channel layer. The source/drain contacts are in contact with the channel stack. The gate electrode is above the substrate.