Abstract: An OTP memory capacitor structure includes a semiconductor substrate, a bottom electrode, a capacitor insulating layer and a metal electrode stack structure. The bottom electrode is provided on the semiconductor substrate. The capacitor insulating layer is provided on the bottom electrode. The metal electrode stack structure includes a metal layer, an insulating sacrificial layer and a capping layer stacked in sequence. The metal layer is provided on the capacitor insulating layer and is used as a top electrode. The insulating sacrificial layer is provided between the metal layer and the capping layer. A manufacturing method of the OTP memory capacitor structure is also provided. By the provision of the insulating sacrificial layer, the bottom electrode formed first can be prevented from being damaged by subsequent etching and other processes, so that the OTP memory capacitor structure has better electrical characteristics.

Abstract: A silicon-carbon composite material and a preparation method thereof, a negative electrode plate, and a secondary battery are disclosed. The silicon-carbon composite material includes a porous carbon matrix and silicon-based particles. The porous carbon matrix internally includes a plurality of pore channels with a width of 5 nm-50 nm. The silicon-based particles are distributed in the pore channels, and the porous carbon matrix meets: 1.0×10?7?Vtotal/Stotal?10.0×10?7, where Stotal is the total surface area occupied by the pore channels with the width of 5 nm-50 nm, and the measurement unit is: ×104 cm2/g; and Vtotal is the total pore volume occupied by the pore channels with the width of 5 nm-50 nm. The silicon-carbon composite material has high electrical conductivity. When being applied to a negative electrode of the secondary battery, the silicon-carbon composite material can effectively increase the volume capacity and energy density of the secondary battery.

Abstract: This application discloses a conductive paste, a preparation method thereof. The conductive paste comprises: a thermoplastic polyurethane, conductive particles, and an organic solvent, the thermoplastic polyurethane and the conductive particles being proportionally mixed in the organic solvent, and the thermoplastic polyurethane being dispersed in the form of particles among the conductive particles. A thermoplastic polyurethane elastomer is used as a binder, and the conductive particles are mixed in the organic solvent containing the thermoplastic polyurethane elastomer. The conductive particles ensure the conductivity of the conductive film prepared using the conductive paste. The thermoplastic polyurethane has strong adhesion ability, and is suitable for use on the surface of most substrates, to form a conductive film with good adhesion and no cracking.

Abstract: The present disclosure describes a semiconductor device having a dielectric structure between a source/drain (S/D) structure and a contact structure. The semiconductor device includes a S/D structure on a substrate, a dielectric structure on a top surface of the S/D structure, and a S/D contact structure on the S/D structure and the dielectric structure. A portion of the S/D contact structure is in contact with a top surface of the dielectric structure.

Abstract: A method for manufacturing a display device is provided. The method includes providing an array module having at least one first alignment mark. The method also includes providing a light-emitting module having at least one second alignment mark. The method further includes aligning the light-emitting module and the array module by the at least one first alignment mark and the at least one second alignment mark. In addition, the method includes bonding the light-emitting module onto the array module.

Abstract: A silicon carbon negative material is provided. The silicon carbon negative material includes a porous carbon base, nano-silicon crystal grains located in pores of the porous carbon base, and a carbon coating layer located on a surface of the porous carbon base. The nano-silicon crystal grains include an elemental silicon core and a LixSiy coating layer, x is an integer selected from 7 to 22, and y is an integer selected from 3 to 7.

Abstract: A negative electrode plate includes a negative electrode active material layer. The negative electrode active material layer includes a negative electrode active substance and lithium-philic nanoparticles capable of alloying with lithium. A secondary battery includes a positive electrode plate, the negative electrode plate, and a separator provided between the positive electrode plate and the negative electrode plate.

Abstract: The disclosure relates to technology for monitoring driver attentiveness in a vehicle. A driver distraction system collects vehicle data and scene information from the vehicle while traveling on a route. The vehicle data and scene information are then processed to generate a reference heat map. At the same time, the driver distraction system may capture a gaze of a driver to track a gaze direction and duration of the driver while driving the vehicle on the route. The gaze direction and duration are processed to generate a driver gaze heat map. The driver gaze heat map and reference heat map are analyzed to determine a level of driver distraction of the driver in the vehicle, and a recommendation or warning is output to the driver of the vehicle according to the level of driver distraction.

Abstract: Compounds having activity as inhibitors of G12C mutant KRAS protein are provided. The compounds, or a pharmaceutically acceptable salt, stereoisomer, or tautomer thereof, have the following structure: wherein A, L1, L2, Q, R1, R2a, R3a, R3b, R4a, R4b, R9, R10, Y, and Z are as exemplified herein. Pharmaceutical compositions comprising such compounds, methods to modulate the activity of G12C mutant KRAS protein for treatment of disorders, such as cancer, and methods associated with preparation of such compounds are also provided.

Abstract: An anti-twist structure of a voice coil motor includes a base, a lens housing, a first elastic sheet, a second elastic sheet, a magnet, and a yoke member. The lens housing has first margin wall and a second margin wall, and a first protrusion extends from the first margin wall. The yoke member has a first wall, a connection wall, a second wall, and a side wall. The first wall is disposed above the first protrusion, and the second wall is above the first margin wall. The lens housing has a deflectable angle relative to a horizontal reference line. When the lens housing deflects to a maximum value of the deflectable angle, the first margin wall abuts against the second wall and/or the first protrusion abuts against the first wall.

Abstract: Provided is a method for determination of a location of a short circuit fault in a generator arrangement, wherein the generator arrangement includes an electrical machine and at least one channel, wherein the or each channel includes a breaker, a converter unit and a set of stator windings of the electrical machine connected to the converter unit via the breaker, wherein upon an occurrence of a short circuit in a channel, the connection between the set of stator windings and the converter unit is interrupted by opening the breaker, wherein depending on at least one measured signal of a measurand, wherein the measured signal is measured by at least one sensor of the electric machine and wherein the measurand describes a torque ripple of the electrical machine, either the electrical machine or the converter unit of the channel is determined as location of the short circuit fault.

Abstract: A chemical mechanical polishing composition for polishing tungsten or molybdenum comprises, consists essentially of, or consists of a water based liquid carrier, abrasive particles dispersed in the liquid carrier, an amino acid selected from the group consisting of arginine, histidine, cysteine, lysine, and mixtures thereof, an anionic polymer or an anionic surfactant, and an optional amino acid surfactant. A method for chemical mechanical polishing a substrate including a tungsten layer or a molybdenum layer includes contacting the substrate with the above described polishing composition, moving the polishing composition relative to the substrate, and abrading the substrate to remove a portion of the tungsten layer or the molybdenum layer from the substrate and thereby polish the substrate.

Abstract: A method includes receiving a semiconductor substrate. The semiconductor substrate has a top surface and includes a semiconductor element. Moreover, the semiconductor substrate has a fin structure formed thereon. The method also includes recessing the fin structure to form source/drain trenches, forming a first dielectric layer over the recessed fin structure in the source/drain trenches, implanting a dopant element into a portion of the fin structure beneath a bottom surface of the source/drain trenches to form an amorphous semiconductor layer, forming a second dielectric layer over the recessed fin structure in the source/drain trenches, annealing the semiconductor substrate, and removing the first and second dielectric layers. After the annealing and the removing steps, the method further includes further recessing the recessed fin structure to provide a top surface. Additionally, the method includes forming an epitaxial layer from and on the top surface.

Abstract: Provided are a JAK kinase inhibitor, preparation and use thereof. In particular, provided is a compound of Formula I, wherein each group is as described in the specification. The compound has an excellent JAK inhibitory activity, and therefore can be used to prepare pharmaceutical compositions for the treatment of cancer and other diseases related to JAK activity.

Abstract: This application provides a communication method and a communication apparatus. The method includes: A policy control function network element receives, from an application function network element, information about a first time window and information about a first parameter, where the first time window is a time window that is of data transfer of a first service, and the first parameter includes parameters of the data transfer of the first service. The policy control function network element determines the policies of the first service and then sends the policies to the application function network element. The information about each policy includes information about N time windows which are determined based on the information about the first time window and the information about the first parameter, and the N time windows are used to transmit or receive data of the first service.

Abstract: A wafer processing method is provided. The method includes a device providing step, a first lifting step, a wafer placing step, a second lifting step, a soaking step, and a third lifting steps, and a spinning cleaning step. The device providing step includes providing a multifunctional single wafer immersion and spin cleaning device, the device has a spin drive device, a wafer turntable, and a wafer receiving tray. A soaking tank is formed on the wafer receiving tray, and a watertight contact gasket is disposed on the wafer receiving tray to contact the wafer water-tightly such that in the soaking step, an appropriate water level of the liquid medicine can be accumulated to fully soak the wafer.

Abstract: A computing system having a memory component with an embedded media controller. The memory component is encapsulated within an integrated circuit (IC) package. The embedded controller within the IC package is configured to: receive incoming packets, via a serial communication interface of the controller, from a serial connection outside of the IC package; convert the incoming packets into commands and addresses according to a predetermined serial communication protocol; operate memory units encapsulated within the IC package according to the commands and the addresses; convert results of at least a portion of the commands into outgoing packets; and transmit the outgoing packets via the serial communication interface to the serial connection outside of the IC package.

Abstract: A reconfiguration intelligent surface device and a beamforming method thereof, the beamforming method adapted to the reconfiguration intelligent surface device is described below. A timing synchronization signal is received. A frame boundary synchronized with a radio signal transmission/reflection device is established according to the timing synchronization signal. Beam control information is received. A reflected beam is formed by reflecting a radio signal beam transmitted or reflected by the radio signal transmission/reflection device according to the beam control information based on the frame boundary synchronized with the radio signal transmission/reflection device.