Abstract: A semiconductor device includes a metal-insulator-metal (MIM) capacitor. The MIM capacitor includes: electrodes including one or more first electrodes and one or more second electrodes; and one or more insulating layers disposed between adjacent electrodes. The MIM capacitor is disposed in an interlayer dielectric (ILD) layer disposed over a substrate. The one or more first electrodes are connected to a side wall of a first via electrode disposed in the ILD layer, and the one or more second electrodes are connected to a side wall of a second via electrode disposed in the ILD layer. In one or more of the foregoing or following embodiments, the one or more insulating layers include a high-k dielectric material.

Abstract: An assembly structure includes a first assembly member, a second assembly member, a first sliding member and a second sliding member. The first assembly member includes a first engaging portion and a second engaging portion. The first sliding member includes a first through hole and a first engaging recess. The first engaging portion is disposed in the first through hole. The second sliding member includes a second through hole and a second engaging recess. The second engaging portion is disposed in the second through hole. The first sliding member slides toward a first direction to drive the second sliding member to slide toward a second direction, such that the first engaging portion engages with the first engaging recess and the second engaging portion engages with the second engaging recess.

Abstract: A method for adjusting a total bandwidth for a network device is provided. The method includes: for every predetermined time period, determining a data rate of receiving data packets by the network device through a network communication during the predetermined time period; designating the greater one of the data rate and the total bandwidth as a maximal data rate; when a preset condition is not satisfied, using the maximal data rate as the total bandwidth; and when the preset condition is satisfied, determining an adjusted data rate that is smaller than the maximal data rate based on the maximal data rate, and using the adjusted data rate as the total bandwidth.

Abstract: A thickness detection mechanism arranged in a scanner or printer for measuring the thickness of mediums fed through the scanner or printer, which comprising: a conveyor section; at least a idle roller set arranged above the conveyor section, which includes at least a shaft and an idle roller pivotally arranged on the shaft; at least an elastic portion arranged above the shaft; and at least a pressure sensor secured on the elastic portion; wherein the thickness detection mechanism measures the thickness of the medium by measuring the pressure applied on the pressure sensor by the idle roller set as the idle roller set being pushed upward, and thus avoids the medium too thin or too thick to enter the scanner or the printer.

Abstract: A method for managing data throughput of a network device is provided. The method includes: determining a network communication as belonging to a first class or a second class; enqueuing each packet received through the network communication determined as belonging to the first class to a first queue, and enqueuing each packet received through the networking communication determined as belonging to the second class to a second queue; dequeuing the first and second queues at a dequeuing ratio; determining a data rate of dequeuing the second queue; and adjusting the dequeuing ratio based on the data rate of dequeuing the second queue thus determined, a total bandwidth, and a guaranteed minimum bandwidth for the network communication determined as belonging to the first class.

Abstract: A method is implemented by a router and includes: upon receiving a query on an Internet Protocol (IP) address for a domain name, sending the query to a DNS server in order for the DNS server to translate the domain name to an IP address and to transmit a DNS response containing the domain name and the IP address to the router; recording the domain name and the IP address in a table; sending the DNS response to an endpoint device so as to enable the endpoint device to establish a link with an application server via the router based on the IP address; finding the domain name in the lookup table based on the IP address; and determining a type of a service provided by the application server based on the domain name with reference to another table.

Abstract: A device structure, along with methods of forming such, are described. The device structure includes a structure, a first passivation layer disposed on the structure, a buffer layer disposed on the first passivation layer, a barrier layer disposed on a first portion of the buffer layer, a redistribution layer disposed over the barrier layer, an adhesion layer disposed on the barrier layer and on side surfaces of the redistribution layer, and a second passivation layer disposed on a second portion of the buffer layer. The second passivation layer is in contact with the barrier layer, the adhesion layer, and the redistribution layer.

Abstract: A semiconductor structure includes a semiconductor substrate and an interconnect structure on the semiconductor structure. The interconnect structure includes a first layer, a second layer over the first layer, a third layer over the second layer, and a fourth layer over the third layer. A first through via extends through the semiconductor substrate, the first layer, and the second layer. A second through via extends through the third layer and the fourth layer. A bottom surface of the second through via contacts a top surface of the first through via.

Abstract: A metal-insulator-metal (MIM) capacitor structure and a method for forming the same are provided. The MIM capacitor structure includes a first electrode layer formed over a substrate, and a first spacer formed on a sidewall of the first electrode layer. The MIM capacitor structure also includes a first dielectric layer formed on the first spacers, and an end of the first dielectric layer is in direct contact with the first pacer.

Abstract: In a method of manufacturing a semiconductor device, an opening is formed in a first dielectric layer so that a part of a lower conductive layer is exposed at a bottom of the opening, one or more liner conductive layers are formed over the part of the lower conductive layer, an inner sidewall of the opening and an upper surface of the first dielectric layer, a main conductive layer is formed over the one or more liner conductive layers, a patterned conductive layer is formed by patterning the main conductive layer and the one or more liner conductive layers, and a cover conductive layer is formed over the patterned conductive layer. The main conductive layer which is patterned is wrapped around by the cover conductive layer and one of the one or more liner conductive layers.

Abstract: A method of network data transmission is implemented by a computer device, and includes: defining every data packet to be generated by a specific application program as belonging to a direct data packet; defining every data packet to be generated by other application programs as belonging to a controlled data packet; determining which one of the direct data packet and the controlled data packet a data packet belongs to; and when it is determined that the data packet belongs to the direct data packet, transmitting the data packet, and delaying transmission of another data packet which is determined as belonging to the controlled data packet and which is received later than the data packet that is determined as belonging to the direct data packet.

Abstract: A virtual network includes a virtual entry device, a virtual exit device, and a communication channel that couples the virtual entry device to the virtual exit device in a web that lies between and interconnects a local router/switch with a remote router/switch device, where the virtual entry device and the virtual exit device have static forwarding tables which provide substantially improved performance.

Abstract: The present invention relates to a sensing circuit with signal compensation, which comprises a first sensing element, a second sensing element and a differential amplifying circuit, the differential amplifying circuit generates an output signal through a differential compensation according to a common mode voltage, a first sensing signal and a second sensing signal. Hereby, reducing the noise of the sensing circuit is achieved, and the interference of the display driving signal may be effectively improved.

Abstract: Example embodiments provide mechanical dampers. The mechanical dampers may be applied to dissipate energy in a structure that arises for example from a dynamic load such as seismic activity, vehicle impact, vibration of the structure, wind forces, an explosion, etc. The damper comprises a pair of clamping plates. A shear plate is held between the clamping plates. The shear plate is movable in transverse directions relative to the clamping plates. The damper also comprises a conical wedge coupled between one of the clamping plates and the shear plate. The conical wedge comprises a female conical element and a male conical element that projects into a conical indentation of the female conical element.

Abstract: A metal-insulator-metal (MIM) structure and methods of forming the same for reducing the accumulation of external stress at the corners of the conductor layers are disclosed herein. An exemplary device includes a substrate that includes an active semiconductor device. A stack of dielectric layers is disposed over the substrate. A lower contact is disposed over the stack of dielectric layers. A passivation layer is disposed over the lower contact. A MIM structure is disposed over the passivation layer, the MIM structure including a first conductor layer, a second conductor layer disposed over the first conductor layer, and a third conductor layer disposed over the second conductor layer. A first insulator layer is disposed between the first conductor layer and the second conductor layer. A second insulator layer is disposed between the second conductor layer and the third conductor layer. One or more corners of the third conductor layer are rounded.

Abstract: The present disclosure is directed to a semiconductor device. The semiconductor device includes a substrate, an insulating layer disposed on the substrate, a first conductive feature disposed in the insulating layer, and a capacitor structure disposed on the insulating layer. The capacitor structure includes a first electrode, a first dielectric layer, a second electrode, a second dielectric layer, and a third electrode sequentially stacked. The semiconductor device also includes a first via connected to the first electrode and the third electrode, a second via connected to the second electrode, and a third via connected to the first conductive feature. A part of the first via is disposed in the insulating layer. A portion of the first conductive feature is directly under the capacitor structure.

Abstract: A foldable baffle structure is mounted to a tray of a scanner or a printer. The foldable baffle structure includes two limiting components mounted to the tray. Each limiting component includes a sliding element, a stopping element, a guiding element and a pivoting element. Middles of the two sliding elements of the two limiting components have two accommodating spaces penetrating through top surfaces and bottom surfaces of the two sliding elements. The two stopping elements of the two limiting components are mounted in the accommodating spaces of the two limiting components. A middle of one end surface of the stopping element protrudes outward to form a pivoting portion. The guiding element is mounted around an outside of the pivoting portion. The pivoting element is pivotally disposed in the stopping element.

Abstract: A connector assembly includes a metal shielding cage. The metal shielding cage includes a cage body, a back cover and a grounding member. The cage body has a top wall, a mounting side and two side walls, the top wall, the mounting side and the two side walls together define a receiving space extending along a front-rear direction, the receiving space has a front opening toward the front and a rear opening positioned at the rear, the back cover and the grounding member are assembled at the rear opening of the cage body, and the grounding member is provided with an elastic grounding finger row toward the mounting side.

Abstract: The present disclosure relates to organic electrolyte solutions including organic electrolytes (e.g., aromatic imides, ferrocenes, spiro fused compounds, or cyclopropenium compounds), and redox flow batteries and systems including the same.

Abstract: An electronic system includes an electronic device and a cooling device. The electronic device includes a housing, a heat source, a heat-conducting seat, and a heat-conducting block. The housing includes a space and at least one opening in communication with each other. The heat source and the heat-conducting seat are disposed in the space and contact with each. The heat-conducting seat faces the opening. The heat-conducting block is located at the opening and is connected to the housing. The cooling device includes a pressing portion and a cooling portion. The pressing portion presses the heat-conducting block, to cause the heat-conducting block to move into the space and abut against the heat-conducting seat, so that heat of the heat source is transferred to the pressing portion. The cooling portion is connected to the pressing portion, and dissipates the heat transferred to the pressing portion.