Abstract: The present invention discloses a selenium-doped MXene material and a preparation method thereof, comprising the following steps: (1) adding MXene and an organic selenium source into a dispersant, and stirring to prepare a dispersion with a concentration of 10 mg/ml to 100 mg/ml, wherein a mass ratio of MXene and an organic selenium source is 0.1 to 1:1; (2) transferring the dispersion into a reaction kettle, heating to 110° C. to 230° C., reacting for 10 h to 30 h, and then naturally cooling to a room temperature; and (3) washing the product obtained in the step (2) with a cleaning agent, centrifuging to collect a precipitate, and drying the precipitate under vacuum to obtain the selenium-doped MXene material. The composite material prepared by the present invention has high specific surface area, good electrical conductivity, cycle stability performance, rate performance and high theoretical specific capacity.

Abstract: Methods and apparatus for processing a substrate are provided herein. For example, a method for processing a substrate includes applying at least one of low frequency RF power or DC power to an upper electrode formed from a high secondary electron emission coefficient material disposed adjacent to a process volume; generating a plasma comprising ions in the process volume; bombarding the upper electrode with the ions to cause the upper electrode to emit electrons and form an electron beam; and applying a bias power comprising at least one of low frequency RF power or high frequency RF power to a lower electrode disposed in the process volume to accelerate electrons of the electron beam toward the lower electrode.

Abstract: The present disclosure provides methods for treating a human patient diagnosed with a cancer, comprising administering a therapeutically effective amount of a PRMT5 (protein arginine methyltransferase 5) inhibitor, certain methods comprising (i) administering to the patient initial doses of at least about 0.1 mg per day of the PRMT5 inhibitor that is (1S,2R,3S,5R)-3-(2-(2-amino-3-bromoquinolin-7-yl)ethyl)-5-(4-amino-7H-pyrrolo[2,3-d]pyrimidin-7-yl)cyclopentane-1,2-diol or a pharmaceutically acceptable addition salt or solvate thereof for an initial dosing period of about 5 to about 21 days; and (ii) administering to the patient subsequent doses of at least about 0.1 mg per day of the PRMT5 inhibitor for one or more subsequent dosing periods of about 5 to about 21 days each. In these methods, a first subsequent dosing period is separated in time from the initial dosing period by at least about 5 days and the subsequent dosing periods are separated in time from each other by at least about 5 days.

Abstract: The present invention discloses a tellurium-doped MXene composite material and a preparation method thereof, comprising the following steps: (1) adding MXene and a tellurium source into a dispersant to prepare a dispersion, and then stirring the dispersion; (2) heating the dispersion, reacting, and then cooling; (3) centrifuging the product obtained in the step (2), then washing and drying under vacuum; and (4) placing the dry product obtained in the step (3) into a corundum ark, and then transferring into a tubular furnace, heating under the protection of inert gas, retaining the temperature, and then cooling to obtain the tellurium-doped MXene composite material. The composite material prepared by the present invention can be used as a cathode of a potassium ion battery, which increases the interlamellar spacing, and optimizes an ion diffusion channel, so that the electrochemical performance of the potassium ion battery is improved.

Abstract: Embodiments described herein relate to apparatus and methods for performing electron beam reactive plasma etching. In one embodiment, an apparatus for performing EBRPE processes includes an electrode formed from a material having a high secondary electron emission coefficient. The electrode has an electron emitting surface disposed at a nonparallel angle relative to a major axis of a substrate assembly. The EBRPE apparatus may further comprise a capacitive or inductive coupled plasma generator. In another embodiment, methods for etching a substrate include generating a plasma and bombarding an electrode with ions from the plasma to cause the electrode to emit electrons. The electrons are accelerated toward a substrate to induce directional etching of the substrate. During the EBPRE process, the substrate or electrode is actuated through a process volume during the etching.

Abstract: Embodiments described herein relate to apparatus and methods for performing electron beam etching process. In one embodiment, a method of etching a substrate includes delivering a process gas to a process volume of a process chamber, applying a RF power to an electrode formed from a high secondary electron emission coefficient material disposed in the process volume, generating a plasma comprising ions in the process volume, bombarding the electrode with the ions to cause the electrode to emit electrons and form an electron beam, applying a negative DC power to the electrode, accelerating electrons emitted from the bombarded electrode toward a substrate disposed in the process chamber, and etching the substrate with the accelerated ions.

Abstract: An electrode is provided. The electrode includes a contact pad composed of boron-doped polycrystalline diamond (BDD); a fiber core composed of BDD extending longitudinally from the contact pad from a first end that is in direct contact with the contact pad to an opposing second end; and a polycrystalline diamond (PCD) cladding that coats and hermetically seals the contact pad and the fiber core. A first portion of the contact pad and a second portion at or near the second end of the fiber core are not coated and hermetically scaled by the PCD cladding. A method of fabricating the electrode is also provided.

Abstract: A model training method includes: constructing a mapping model between original color information values and standard color information values of images with a coefficient matrix; establishing an objective function of the mapping model based on a regular term of a variable exponent; determining original color information values and standard color information values of a plurality of sample images; and calculating the objective function from the original color information values and the standard color information values of the plurality of sample images to determine the coefficient matrix.

Abstract: Approaches, techniques, and mechanisms are disclosed for accessing AI services from one region to another region. An artificial intelligence (AI) service director is configured with mappings from domain names of AI cloud engines to IP addresses of edge nodes of an AI delivery edge network. The AI cloud engines are located in an AI source region. The AI delivery edge network is deployed in a non-AI-source region. An AI application, which accesses AI services using a domain name of an AI cloud engine in the AI cloud engines located in the AI source region, is redirected to an edge node in the edge nodes of the AI delivery edge network located in the non-AI-source region. The AI application is hosted in the non-AI-source region. The AI services is then provided, by way of the edge node located in the non-AI-source region, to the AI application.

Abstract: The present invention discloses a selenium-doped MXene material and a preparation method thereof, comprising the following steps: (1) adding MXene and an organic selenium source into a dispersant, and stirring to prepare a dispersion with a concentration of 10 mg/ml to 100 mg/ml, wherein a mass ratio of MXene and an organic selenium source is 0.1 to 1:1; (2) transferring the dispersion into a reaction kettle, heating to 110° C. to 230° C., reacting for 10 h to 30 h, and then naturally cooling to a room temperature; and (3) washing the product obtained in the step (2) with a cleaning agent, centrifuging to collect a precipitate, and drying the precipitate under vacuum to obtain the selenium-doped MXene material. The composite material prepared by the present invention has high specific surface area, good electrical conductivity, cycle stability performance, rate performance and high theoretical specific capacity.

Abstract: The present invention discloses a selenium-doped MXene composite nano-material and a preparation method thereof, comprising the following steps: (1) adding MXene and an organic selenium source into a dispersant, and stirring to prepare a dispersion with a concentration of 1 mg/ml to 100 mg/ml; (2) transferring the dispersion into a reaction kettle, then heating, reacting, and then naturally cooling to a room temperature; (3) washing the product obtained in the step (2) with a cleaning agent, then centrifuging to collect a precipitate, and drying the precipitate under vacuum; and (4) placing the sample obtained in the step (3) into a tubular furnace for calcination, introducing protective gas, heating, and then cooling to a room temperature to obtain the selenium-doped MXene composite nano-material. The material prepared by the present invention has high specific surface area, good electrical conductivity, cycle stability performance, rate performance and high theoretical specific capacity.

Abstract: The present invention discloses a tellurium-doped MXene composite material and a preparation method thereof, comprising the following steps: (1) adding MXene and a tellurium source into a dispersant to prepare a dispersion, and then stirring the dispersion; (2) heating the dispersion, reacting, and then cooling; (3) centrifuging the product obtained in the step (2), then washing and drying under vacuum; and (4) placing the dry product obtained in the step (3) into a corundum ark, and then transferring into a tubular furnace, heating under the protection of inert gas, retaining the temperature, and then cooling to obtain the tellurium-doped MXene composite material. The composite material prepared by the present invention can be used as a cathode of a potassium ion battery, which increases the interlamellar spacing, and optimizes an ion diffusion channel, so that the electrochemical performance of the potassium ion battery is improved.

Abstract: Embodiments described herein relate to apparatus and methods for performing electron beam reactive plasma etching (EBRPE). In one embodiment, an apparatus for performing EBRPE processes includes an electrode formed from a material having a high secondary electron emission coefficient. In another embodiment, methods for etching a substrate include generating a plasma and bombarding an electrode with ions from the plasma to cause the electrode to emit electrons. The electrons are accelerated toward a substrate to induce etching of the substrate.

Abstract: Embodiments of the disclosure provide a plasma source assembly and process chamber design that can be used for any number of substrate processing techniques. The plasma source may include a plurality of discrete electrodes that are integrated with a reference electrode and a gas feed structure to generate a uniform, stable and repeatable plasma during processing. The plurality of discrete electrodes include an array of electrodes that can be biased separately, in groups or all in unison, relative to a reference electrode. The plurality of discrete electrodes may include a plurality of conductive rods that are positioned to generate a plasma within a processing region of a process chamber. The plurality of discrete electrodes is provided RF power from standing or traveling waves imposed on a power distribution element to which the electrodes are connected.

Abstract: A method of performing deposition of diamond-like carbon on a workpiece in a chamber includes supporting the workpiece in the chamber facing an upper electrode suspended from a ceiling of the chamber, introducing a hydrocarbon gas into the chamber, and applying first RF power at a first frequency to the upper electrode that generates a plasma in the chamber and produces a deposition of diamond-like carbon on the workpiece. Applying the RF power generates an electron beam from the upper electrode toward the workpiece to enhance ionization of the hydrocarbon gas.

Abstract: A method, apparatus and system for dechucking a processing object from a surface of an electrostatic chuck (ESC) in a processing chamber can include applying to the ESC for a first time interval, a first dechuck voltage having a substantially equal magnitude and opposite polarity of a chuck voltage chucking the processing object to the surface of the ESC, selecting a second dechuck voltage having an opposite polarity as the first dechuck voltage, linearly sweeping the ESC voltage from the first dechuck voltage to the second dechuck voltage over a second time interval, monitoring the ESC current during the second time interval until a current spike in the ESC current above a threshold is detected, communicating a command to move support pins up to remove the processing object from the ESC surface, and maintaining the second dechuck voltage until the processing object is separated from the surface of the ESC.

Abstract: Embodiments described herein relate to apparatus and methods for performing electron beam etching process. In one embodiment, a method of etching a substrate includes delivering a process gas to a process volume of a process chamber, applying a RF power to an electrode formed from a high secondary electron emission coefficient material disposed in the process volume, generating a plasma comprising ions in the process volume, bombarding the electrode with the ions to cause the electrode to emit electrons and form an electron beam, applying a negative DC power to the electrode, accelerating electrons emitted from the bombarded electrode toward a substrate disposed in the process chamber, and etching the substrate with the accelerated ions.

Abstract: Embodiments described herein relate to apparatus for performing electron beam reactive plasma etching (EBRPE). In one embodiment, an apparatus for performing EBRPE processes includes an electrode formed from a material having a high secondary electron emission coefficient. In another embodiment, an electrode is movably disposed within a process volume of a process chamber and capable of being positioned at a non-parallel angle relative to a pedestal opposing the electrode. In another embodiment, a pedestal is movably disposed with a process volume of a process chamber and capable of being positioned at a non-parallel angle relative to an electrode opposing the pedestal. Electrons emitted from the electrode are accelerated toward a substrate disposed on the pedestal to induce etching of the substrate.

Abstract: A plasma reactor includes a chamber body having an interior space that provides a plasma chamber, a gas distributor, a pump coupled to the plasma chamber, a workpiece support to hold a workpiece, an intra-chamber electrode assembly comprising a plurality of filaments extending laterally through the plasma chamber, each filament including a conductor surrounded by a cylindrical insulating shell, the plurality of filaments including a first multiplicity of filaments and a second multiplicity of filaments arranged in an alternating pattern with the first multiplicity of filaments, a first bus coupled to the first multiplicity of filaments and a second bus coupled to the second multiplicity of filaments, an RF power source to apply RF signal the intra-chamber electrode assembly, and at least one RF switch configured to controllably electrically couple and decouple the first bus from one of i) ground, ii) the RF power source, or iii) the second bus.

Abstract: Embodiments of the disclosure provide a plasma source assembly and process chamber design that can be used for any number of substrate processing techniques. The plasma source may include a plurality of discrete electrodes that are integrated with a reference electrode and a gas feed structure to generate a uniform, stable and repeatable plasma during processing. The plurality of discrete electrodes include an array of electrodes that can be biased separately, in groups or all in unison, relative to a reference electrode. The plurality of discrete electrodes may include a plurality of conductive rods that are positioned to generate a plasma within a processing region of a process chamber. The plurality of discrete electrodes is provided RF power from standing or traveling waves imposed on a power distribution element to which the electrodes are connected.