Abstract: In some embodiments, an apparatus for cleaning a substrate is provided that includes (1) a substrate chuck configured to support a substrate with a front side of the substrate accessible; (2) a buff pad assembly configured to support a buff pad having a diameter smaller than a diameter of the substrate; and (3) a swing arm coupled to the buff pad and configured to position and rotate the buff pad along the front side of the substrate, and control an amount of force applied by the buff pad against the front side of the substrate during cleaning. The substrate chuck, buff pad assembly and swing arm are configured to buff clean the substrate. Numerous additional aspects are disclosed.

Abstract: A slurry for chemical mechanical of a cobalt layer or a conductive layer over a cobalt layer includes abrasive particles, an organic complexing compound for Cu or Co ion complexion, a Co corrosion inhibitor that is 0.01-1.0 wt % of the slurry, an oxidizer, and a solvent. The slurry has a pH of 7-12.

Abstract: A slurry for planarization of a photoresist includes abrasive particles, an oxidizer, a surface activation chemical, and a solvent.

Abstract: Embodiments of the present invention relates to an apparatus and method for cleaning a substrate using a disk brush. One embodiment provides a substrate cleaner comprising a substrate chuck disposed in the processing volume, and a brush assembly disposed in the processing volume, wherein the brush assembly comprises a disk brush movably disposed opposing the substrate chuck, and a processing surface of the disk brush contacts a surface of the substrate on the substrate chuck.

Abstract: A CMP method for polishing a phase change alloy on a substrate surface including positioning the substrate comprising a phase change alloy material on a platen containing a polishing pad and delivering a polishing slurry to the polishing pad. The polishing slurry includes colloidal particles with a particle size less than 60 nm, in an amount between 0.2% to about 10% by weight of slurry, a pH adjustor, a chelating agent, an oxidizing agent in an amount less than 1% by weight of slurry, and polyacrylic acid. The substrate on the platen is polished to remove a portion of the phase change alloy. A rinsing solution for rinsing the substrate on the platen includes deionized water and at least one component in the deionized water where the component selected from the group consisting of polyethylene imine, polyethylene glycol, polyacrylic amide, alcohol ethoxylates, polyacrylic acid, an azole containing compound, benzo-triazole, and combinations thereof.

Abstract: Methods, systems and apparatus are provided for polishing an edge of a substrate. The invention includes an apparatus adapted to apply a preset pressure to a polishing film in contact with an edge of a substrate. The apparatus includes an actuator adapted to apply a preset pressure to the polishing film; and a controller coupled to the actuator and adapted to receive a signal indicative of a condition of the edge of the substrate, and to adjust a pressure applied by the actuator to the polishing film so as to maintain the preset pressure based on the received signal. Numerous other aspects are provided.

Abstract: Methods of and systems for polishing an edge of a substrate are provided. The invention includes a substrate rotation driver adapted to rotate the edge of a substrate against a polishing film; and a first sensor coupled to the rotation driver adapted to detect one of an energy and torque exerted by the substrate rotation driver as it rotates the substrate against the polishing film. Numerous other aspects are provided.

Abstract: Methods for polishing an edge of a substrate are provided. The invention includes rotating a substrate against a polishing film so as to remove material from the edge of the substrate; and detecting an amount of force exerted in pressing the polishing film against the substrate. Numerous other aspects are provided.

Abstract: Apparatus and methods are provided relating to polishing a substrate using a polishing device, such as a polishing tape. The polishing device may be formed to include a base, a resin layer adhering to the base, and a plurality of embossed abrasive particles and/or abrasive beads affixed to the base by the resin layer. The plurality of abrasive particles and/or beads may be embossed in the resin layer. The plurality of abrasive beads may include a plurality of abrasive particles suspended in binder material. The plurality of abrasive particles and/or beads and the resin layer combine to form an abrasive side of the polishing device adapted to contact the substrate. Polishing of the substrate preferably includes polishing an edge of the substrate while the substrate is rotated by a holding device such that no apparatus other than the polishing tape contacts the edge while the substrate is rotating.

Abstract: Methods and apparatus are provided for concurrently chemically and mechanically polishing a substrate edge. The invention includes a substrate support adapted to rotate a substrate; a polishing head adapted to contact an edge of the substrate, the polishing head including a first channel adapted to apply a first fluid to the edge of the substrate; a second channel adapted to direct a second fluid onto a major surface of the rotating substrate; and a third channel adapted to direct a third fluid at the major surface of the substrate and to prevent the second fluid from diluting the first fluid. Numerous other aspects are provided.

Abstract: Methods of and systems for polishing an edge of a substrate are provided. The invention includes rotating a substrate against a polishing film so as to remove material from the edge of the substrate; and detecting an amount of one of energy and torque exerted in rotating the substrate against the polishing film. The invention may further include determining an amount of material removed from the edge of the substrate based on the detected energy or torque exerted in rotating the substrate against the polishing film; ascertaining a difference between the determined amount of material removed and a preset polish level; and determining an amount of energy or torque to be exerted in rotating the substrate adapted to attain the preset polish level based on the difference between the determined amount of material removed and the preset polish level. Numerous other aspects are provided.

Abstract: Method and apparatus are provided for polishing substrates comprising conductive and low k dielectric materials with reduced or minimum substrate surface damage and delamination. In one aspect, a method is provided for processing a substrate including positioning a substrate having a conductive material form thereon in a polishing apparatus having a rotational carrier head and a rotatable platen, wherein the substrate is disposed in the rotational carrier head and the platen has a polishing article disposed thereon, rotating the first carrier head at a first carrier head rotational rate and rotating a platen at a first platen rotational rate, contacting the substrate and the polishing article, accelerating the first carrier head rotational rate to a second carrier head rotational rate and accelerating the first platen rotational rate to a second platen rotational rate, and polishing the substrate at the second carrier head rotational rate and at the second platen rotational rate.

Abstract: Method and apparatus are provided for polishing substrates comprising conductive and low k dielectric materials with reduced or minimum substrate surface damage and delamination. In one aspect, a method is provided for processing a substrate including positioning a substrate having a conductive material form thereon in a polishing apparatus having a rotational carrier head and a rotatable platen, wherein the substrate is disposed in the rotational carrier head and the platen has a polishing article disposed thereon, rotating the first carrier head at a first carrier head rotational rate and rotating a platen at a first platen rotational rate, contacting the substrate and the polishing article, accelerating the first carrier head rotational rate to a second carrier head rotational rate and accelerating the first platen rotational rate to a second platen rotational rate, and polishing the substrate at the second carrier head rotational rate and at the second platen rotational rate.

Abstract: Method and apparatus are provided for polishing substrates comprising conductive and low k dielectric materials with reduced or minimum substrate surface damage and delamination. In one aspect, a method is provided for processing a substrate including positioning a substrate having a conductive material form thereon in a polishing apparatus having a rotational carrier head and a rotatable platen, wherein the substrate is disposed in the rotational carrier head and the platen has a polishing article disposed thereon, rotating the first carrier head at a first carrier head rotational rate and rotating a platen at a first platen rotational rate, contacting the substrate and the polishing article, accelerating the first carrier head rotational rate to a second carrier head rotational rate and accelerating the first platen rotational rate to a second platen rotational rate, and polishing the substrate at the second carrier head rotational rate and at the second platen rotational rate.

Abstract: Method and apparatus are provided for polishing substrates comprising conductive and low k dielectric materials with reduced or minimum substrate surface damage and delamination. In one aspect, a method is provided for processing a substrate including positioning a substrate having a conductive material form thereon in a polishing apparatus having a rotational carrier head and a rotatable platen, wherein the substrate is disposed in the rotational carrier head and the platen has a polishing article disposed thereon, rotating the first carrier head at a first carrier head rotational rate and rotating a platen at a first platen rotational rate, contacting the substrate and the polishing article, accelerating the first carrier head rotational rate to a second carrier head rotational rate and accelerating the first platen rotational rate to a second platen rotational rate, and polishing the substrate at the second carrier head rotational rate and at the second platen rotational rate.

Abstract: Methods and apparatuses are provided that remove a scrubber brush from contact with a wafer surface prior to slowing down the scrubber brush's rotational rate. The scrubbing method may include rotating a scrubber brush at a non-reduced rate, while the scrubber brush is in contact with the wafer and removing the scrubber brush from contact with the wafer while rotating the scrubber brush at the non-reduced rate. The scrubbing apparatus has a controller programmed to perform the scrubbing method.

Abstract: A method and an apparatus that uses a surfactant to clean a hydrophobic wafer is provided. In a first aspect, the method may clean and dry a wafer without applying pure DI water to the wafer. In a second aspect, the method may clean a wafer by applying pure DI water to the wafer only for a short duration of time such that the DI water application ceases prior to or as soon as a surfactant solution is rinsed from the wafer thereafter the wafer is dried. In a further aspect a hydrophobic wafer is maintained wetted with surfactant as it is transferred between cleaning apparatuses and is rinsed via diluted surfactant or via a brief DI water spray and is thereafter dried.

Abstract: A hydrophobic wafer is cleaned, rinsed with a low concentration surfactant (e.g., a solution containing approximately 1 to 400 parts per million of surfactant) and then dried (e.g., a via spin drier or an IPA drier). The cleaning rinsing and drying steps may be performed in one or more apparatuses.

Abstract: Methods and apparatuses are provided that remove a scrubber brush from contact with a wafer surface prior to slowing down the scrubber brush's rotational rate. The scrubbing method may comprise rotating a scrubber brush at a non-reduced rate, while the scrubber brush is in contact with the wafer and removing the scrubber brush from contact with the wafer while rotating the scrubber brush at the non-reduced rate. The scrubbing apparatus has a controller programmed to perform the scrubbing method.