Abstract: An optical sensor system is disclosed. The optical sensor system comprises a panel and a sensing unit. The panel comprises a plurality of transparent areas. The sensing unit locates at one side of the panel and the sensing unit senses a plurality of first light signals reflected by an object and senses a plurality second light signals of an ambient light. The reflected first light signals and the second light signals pass through one of the plurality of transparent areas of the panel. The sensing unit further comprises a light sensor and a plurality of gesture sensors. The light sensor locates at the center of the sensing unit, and the light sensor senses the second light signals. The plurality of gesture sensors surrounds the light sensor, and the gesture sensors senses the reflected first light signals and then produce gesture signals corresponding to motions of the object.

Abstract: A method for forming an interlevel dielectric (ILD) layer includes the following steps. A MOS transistor on a substrate is provided. A first undoped oxide layer is deposited to cover the substrate and the MOS transistor. The first undoped oxide layer is planarized. A phosphorus containing oxide layer is deposited on the first undoped oxide layer. A second undoped oxide layer is deposited on the phosphorus containing oxide layer.

Abstract: A semiconductor structure is located in a recess of a substrate. The semiconductor structure includes a liner, a silicon rich layer and a filling material. The liner is located on the surface of the recess. The silicon rich layer is located on the liner. The filling material is located on the silicon rich layer and fills the recess. Furthermore, a semiconductor process forming said semiconductor structure is also provided.

Abstract: A metal interconnection structure includes a substrate and a protective layer. The substrate includes at least a first conductive layer. The protective layer is a single-layered structure disposed on the substrate, and a quantity of oxygen (O) in an upper part of the protective layer is more than a quantity of oxygen (O) in a lower part of the protective layer. A material of the upper part of the protective layer includes silicon oxycarbide (SiCO) or silicon oxycarbonitride (SiCNO), and a material of the lower part of the protective layer includes silicon carbide (SiC) or silicon carbonitride (SiCN).

Abstract: A photo-coupler device includes a P-type substrate, a P-type epitaxial layer, an insulation layer, a plurality of shielding layers, a metal layer and a passivation layer. The P-type epitaxial layer is deposited on the P-type substrate and includes two conducting regions and a plurality of N+ electrode regions between the two conducting regions. The insulation layer is deposited on the P-type epitaxial layer. The shielding layers comprising first shielding layers and second shielding layers are deposited in the insulation layer in parallel in a horizontal direction, and the first shielding layers are arranged for correspondingly covering the two conducting regions, the second shielding layers are arranged for correspondingly covering the at least one of the N+ electrode regions. The metal layer is made of Ag and is deposited on the insulation layer. The passivation layer is deposited on the metal layer.

Abstract: A metal interconnection structure includes a substrate and a protective laver. The substrate includes at least a first conductive layer. The protective layer is a single-layered structure disposed on the substrate, and a quantity of oxygen (O) in an upper part of the protective layer is more than a quantity of oxygen (O) in a lower part of the protective layer. A material of the upper part of the protective layer includes silicon oxycarbide (SiCO) or silicon oxycarbonitride (SiCNO), and a material of the lower part of the protective layer includes silicon carbide (SiC) or silicon carbonitride (SiCN).

Abstract: A photo-coupler device includes a P-type substrate, a P-type epitaxial layer, an insulation layer, a plurality of shielding layers, a metal layer and a passivation layer. The P-type epitaxial layer is deposited on the P-type substrate and including two conducting regions and a plurality of N+ electrode regions between the two conducting regions. The insulation layer is deposited on the P-type epitaxial layer. The shielding layers are deposited in the insulation layer in a transverse juxtaposition manner, and the portion of the shielding layers is arranged for correspondingly covering the two conducting regions, another portion of the shielding layers is arranged for correspondingly covering the part of the N+ electrode regions. The metal layer is made of Ag and is deposited on the insulation layer. The passivation layer is deposited on the metal layer.

Abstract: A semiconductor structure is located in a recess of a substrate. The semiconductor structure includes a liner, a silicon rich layer and a filling material. The liner is located on the surface of the recess. The silicon rich layer is located on the liner. The filling material is located on the silicon rich layer and fills the recess. Furthermore, a semiconductor process forming said semiconductor structure is also provided.

Abstract: A reflection sensing system comprises a body, an illuming module and a detecting module. The body is made by low temperature co-fired ceramic (LTCC) technology or other plasticity colloids and disposed a plurality of electronic connecting points. The illuming module includes a first accommodating space and a light emitted diode (LED), and the detecting module includes a light detector. The first accommodating space is disposed on the body and having a first open at one side. The cross-section of the first accommodating space is parabolic. The LED is disposed at the site of the focus of the first accommodating space, connected to the electronic connecting points and facing to the first open. The light detector is disposed on the body, connected to the electronic connecting points and providing sensing signals after receiving light.

Abstract: The present invention discloses a Micro-Electro-Mechanical Systems (MEMS) capacitive sensing circuit wherein two input nodes of a fully differential amplifier are separately connected to a MEMS capacitive sensing device and a matching capacitor, which both contain similar capacity value and connect to a bias node, and two resistors separately connect the MEMS capacitive sensing device and the matching capacitor to ground (zero voltage). Thus, the present invention could effectively eliminate the bias noise in the circuit without any discrete capacitor and capable for designer to integrate all circuit devices into an IC.

Abstract: A light emitting apparatus comprises a light emitting element and a switching converter comprising a conversion circuit for converting an operating electric signal to generate the driving electric signal, a feedback circuit having a light detecting element for detecting a luminous intensity of the light emitting element and generating a feedback signal, and a control circuit for receiving the feedback signal, comparing the received feedback signal with a reference electric signal, and controlling the conversion circuit based on comparison results to adjust the driving electric signal. Alternatively, the light detecting element detects ambient light and the control circuit controls the conversion circuit based on comparison results to stop or enable outputting of the driving electric signal.

Abstract: A control circuit for current detection is disclosed. The control circuit outputting an output current to a power device comprises at least one first Field Effect Transistor (FET) coupled to the positive input terminal of an operational amplifier. The first FET is coupled to the power device through two voltage terminals, wherein the output current is passed through the first FET. The control circuit further comprises at least one second FET coupled to the first FET and the negative input terminal of the first operational amplifier, utilizing the virtual-short characteristic of the first operational amplifier to form a current mirror with the first FET, and copying the output current to generate a copy current by a scale whereby the output current is detected by the copy current. The invention detects the output current without consuming additional power so as to measure the power consumption for the power device.

Abstract: The present invention relates to an optical position detecting device and method thereof, comprising multiple light emitting components, a driving unit, at least one photo detecting unit, a position storing unit and a position determining unit. Each light emitting components disposed on a plane to form a sensing area respectively projects a light source into the sensing area. The disposing positions of light emitting components and photo detecting unit are recorded in the position determining unit. The driving unit drives light emitting components sequentially. When an object encounters the projected light source above the sensing area, thus sequentially creating a reflected light signal, the photo detecting unit respectively generates sensed signals based on the intensity of the reflected light signal. The position storing unit records the positions of light emitting components and photo detecting unit. The position determining unit determines the position of the object.

Abstract: The present invention discloses an optical quantized distance measuring apparatus and a method thereof. The optical distance quantized measuring apparatus comprises an illuminating module, a sensing component array and a processing module. The illuminating module projects a light source onto an object to generate a reflecting light. The sensing component array receives the reflecting light, which generates a light source location on the sensing component array. The processing module determines the light source location, and determines an interval between the object and the sensing component array according to the light source location. The processing module determines the light source location with the binary search algorithm.

Abstract: A light emitting apparatus comprises a light emitting element and a switching converter comprising a conversion circuit for converting an operating electric signal to generate the driving electric signal, a feedback circuit having a light detecting element for detecting a luminous intensity of the light emitting element and generating a feedback signal, and a control circuit for receiving the feedback signal, comparing the received feedback signal with a reference electric signal, and controlling the conversion circuit based on comparison results to adjust the driving electric signal. Alternatively, the light detecting element detects ambient light and the control circuit controls the conversion circuit based on comparison results to stop or enable outputting of the driving electric signal.

Abstract: A optical sensing module based on signals having pulse width modulation and a method thereof are disclosed for sensing a light source and providing an output signal having pulse width modulation. The optical sensing module comprises an optical sensor, a signal processing unit, and a duty cycle modulation unit. The signal processing unit provides a modulation control signal based on a sensing signal generated by sensing the light source from the optical sensor in conjunction with a gain control signal. The duty cycle modulation unit modulates the duty cycle of the pulse width modulation input signal to generate the pulse width modulation output signal based on the modulation control signal. The duty cycle difference between the duty cycle of the input signal and the duty cycle of the output signal is proportional to the intensity difference between the light source and a reference light source.

Abstract: The present invention discloses a Micro-Electro-Mechanical Systems (MEMS) capacitive sensing circuit wherein two input nodes of a fully differential amplifier are separately connected to a MEMS capacitive sensing device and a matching capacitor, which both contain similar capacity value and connect to a bias node, and two resistors separately connect the MEMS capacitive sensing device and the matching capacitor to ground (zero voltage). Thus, the present invention could effectively eliminate the bias noise in the circuit without any discrete capacitor and capable for designer to integrate all circuit devices into an IC.

Abstract: The present invention discloses an illumination apparatus and an optical radiation control method. The illumination apparatus includes at least one light emitting module, an optical detector, a temperature calculating module and a control module. These emitting modules are for producing a light beam and the control module is for generating a PWM signal to drive the emitting modules. The optical detector electrically connected to the control module is for detecting the optical radiation of light emitted from the light modules. The temperature calculating module is for calculating the temperature of the illumination apparatus based on the PWM signal and a predetermined PWM width. The control module can adjust the optical radiation of light emitted from the light modules based on the temperature and the detected data of the optical detector.

Abstract: The ambient light sensor structure includes a power supply, a converter, and a pulse processing unit. The power supply provides a reference voltage interface, a high voltage interface and a low voltage interface. The converter includes a first current-to-pulse converter, a second current-to-pulse converter, a first light sensor and a second light sensor. The pulse processing unit comprises a signal subtraction component for circuit blocking, a counter, a digital-to-analog converter and a buffer by series connection. Without incident light, two light sensors would produce a dark current due to the material characteristics of the two photo diodes. Therefore, two current to pulse converters convert the dark current into a pulse signal and transmit the pulse signal to the signal subtraction component in order to cancel the dark current. By the method mentioned above, the dark current caused by the material characteristic of the two light sensors can be eliminated.

Abstract: An apparatus and a method for converting optical signal into electrical signal are disclosed. The apparatus includes a photo diode (PD) and a charge pump circuit. The PD receives an optical signal. The optical signal is then converted into a current signal. The charge pump circuit is electrically connected to the PD and performs a charge-discharge to generate a pulse signal based on the current signal. The characteristic of the pulse signal relates to the intensity of the optical signal.