Abstract: A semiconductor device includes: an insulation circuit substrate including a metal layer and an insulation substrate, the metal layer being formed on one surface of the insulation substrate, a connecting member having a cylindrical shape joined to the metal layer via a bonding material, a terminal pin inserted in the connecting member, and a reinforcement member having a cylindrical shape disposed on an outer periphery of the connecting member. The reinforcement member is made of a material having a hardness greater than that of the connecting member.

Abstract: A semiconductor device includes: an insulating substrate including an insulating plate and a circuit board on the insulating plate; a semiconductor chip having an electrode on a front surface thereof, a back of the semiconductor chip being fixed to the circuit board; a printed circuit board that faces the circuit board and the front surface of the semiconductor chip; and one or more conductive posts each having one end connected via solder to the circuit board or to the electrode on the semiconductor chip, another end connected to the printed circuit board, and one or more grooves that extend from said one end of the conductive post that contacts the solder to said another end of the conductive post connected to the printed circuit board.

Abstract: Provided is a semiconductor device including an insulating plate; a first conducting portion formed on a first surface of the insulating plate; a semiconductor element mounted on the first conducting portion; and a mold material that seals the first conducting portion and the semiconductor element on the first surface side of the insulating plate. A material of the insulating plate has higher adhesion with respect to the mold material than a material of the first conducting portion, and the first conducting portion includes a gap that is filled with the mold material between the first conducting portion and the insulating plate in a portion thereof.

Abstract: A semiconductor apparatus 1 includes a circuit substrate 3 having a circuit pattern layer 3c on an upper principal surface, semiconductor elements 4a and 4b mounted on the circuit pattern layer 3c of the circuit substrate 3, a printed substrate 6 arranged apart from the circuit substrate 3 on the upper principal surface side of the circuit substrate 3, a housing 2 mold-sealing the upper principal surface side of the circuit substrate 3, and a block 10 provided sandwiching at least part of the housing 2 and being opposite to the circuit substrate 3, the block having a linear expansion coefficient smaller than that of the housing 2.

Abstract: A semiconductor device, including a plurality of semiconductor units disposed in a matrix, and a capsule encapsulating the plurality of semiconductor units. Each semiconductor unit includes a semiconductor element and another capsule encapsulating the semiconductor element. Each semiconductor unit further has a plurality of convex portions formed on a front surface thereof, and an engagement portion through which the semiconductor unit engages with at least one of the other semiconductor units.

Abstract: Provided is a semiconductor device including an insulating plate; a first conducting portion formed on a first surface of the insulating plate; a semiconductor element mounted on the first conducting portion; and a mold material that seals the first conducting portion and the semiconductor element on the first surface side of the insulating plate. A material of the insulating plate has higher adhesion with respect to the mold material than a material of the first conducting portion, and the first conducting portion includes a gap that is filled with the mold material between the first conducting portion and the insulating plate in a portion thereof.

Abstract: A temperature of a semiconductor element is measured based on a temperature coefficient of a voltage between the first electrode and the second electrode when no heat is generated when causing a constant current of an extent such that the semiconductor element does not generate heat to be input wherein current is caused to flow from a third electrode to a second electrode in accordance with voltage applied between a first electrode and the second electrode. Also, a constant current such that the semiconductor element generates heat is input into the third electrode, with voltage applied between the first electrode and second electrode of the semiconductor element kept constant, and power is measured based on the current such that the semiconductor element generates heat and on voltage when heat is generated between the third electrode and second electrode when the semiconductor element generates heat.

Abstract: A semiconductor device includes: an insulating substrate including an insulating plate and a circuit board on the insulating plate; a semiconductor chip having an electrode on a front surface thereof, a back of the semiconductor chip being fixed to the circuit board; a printed circuit board that faces the circuit board and the front surface of the semiconductor chip; and one or more conductive posts each having one end connected via solder to the circuit board or to the electrode on the semiconductor chip, another end connected to the printed circuit board, and one or more grooves that extend from said one end of the conductive post that contacts the solder to said another end of the conductive post connected to the printed circuit board.

Abstract: A temperature of a semiconductor element is measured based on a temperature coefficient of a voltage between the first electrode and the second electrode when no heat is generated when causing a constant current of an extent such that the semiconductor element does not generate heat to be input wherein current is caused to flow from a third electrode to a second electrode in accordance with voltage applied between a first electrode and the second electrode. Also, a constant current such that the semiconductor element generates heat is input into the third electrode, with voltage applied between the first electrode and second electrode of the semiconductor element kept constant, and power is measured based on the current such that the semiconductor element generates heat and on voltage when heat is generated between the third electrode and second electrode when the semiconductor element generates heat.