Patents by Inventor Yuichiro Shimizu
Yuichiro Shimizu has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 11811009Abstract: A light emitting device includes a ceramic substrate, a light emitting element, and a wiring. The light emitting element is formed on an upper surface of the ceramic substrate. The wiring is arranged inside the ceramic substrate and is electrically and directly connected to the light emitting element. The light emitting element includes a structure in which a lower semiconductor layer, an active layer, and an upper semiconductor layer are sequentially stacked.Type: GrantFiled: June 9, 2021Date of Patent: November 7, 2023Assignee: Shinko Electric Industries Co., LTD.Inventors: Michio Horiuchi, Yuichiro Shimizu, Masaya Tsuno
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Publication number: 20230072659Abstract: A ceramic composition is provided. The ceramic composition includes a corundum phase, and a CeAl11O18 phase. A ratio of an amount of substance of the CeAl11O18 phase with respect to a total amount of substance of the ceramic composition is not lower than 0.5 mol % and not higher than 5 mol %.Type: ApplicationFiled: September 6, 2022Publication date: March 9, 2023Inventors: Michio Horiuchi, Yuichiro Shimizu
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Publication number: 20220213140Abstract: The present inventors discovered affinity purification resins having sufficient binding affinity for Fc region variants with reduced binding to Protein A. Specifically, immunoglobulins containing an Fc region variant having reduced binding to Protein A could be purified using a Protein A-modified ligand containing a structure in which the amino acids of the C-domain have been substituted as an Fc ligand.Type: ApplicationFiled: April 9, 2020Publication date: July 7, 2022Inventors: Tetsuya WAKABAYASHI, Yuichiro SHIMIZU, Masahiro FUKUNAGA, Eiji MAJIMA
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Patent number: 11359271Abstract: A nitriding treatment method of a steel member, in which a nitriding treatment step is performed in which the steel member is subjected to a nitriding treatment in a nitriding gas atmosphere having a nitriding potential with which a ?? phase or ? phase iron nitride compound layer is generated on a surface of the steel member, and then, a passing step is performed in which the steel member is made to pass through an atmosphere at 425° C. to 600° C. where the iron nitride compound layer does not grow over five minutes or more, the iron nitride compound layer has the ?? phase uppermost surface layer, and the ?? phase is made to precipitate in the iron nitride compound layer by the proportion of 40% or more.Type: GrantFiled: March 31, 2016Date of Patent: June 14, 2022Assignee: DOWA THERMOTECH CO., LTD.Inventors: Yuichiro Shimizu, Katsushige Shimizu, Kiyotaka Akimoto
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Publication number: 20210391518Abstract: A light emitting device includes a ceramic substrate, a light emitting element, and a wiring. The light emitting element is formed on an upper surface of the ceramic substrate. The wiring is arranged inside the ceramic substrate and is electrically and directly connected to the light emitting element. The light emitting element includes a structure in which a lower semiconductor layer, an active layer, and an upper semiconductor layer are sequentially stacked.Type: ApplicationFiled: June 9, 2021Publication date: December 16, 2021Applicant: Shinko Electric Industries Co., LTD.Inventors: Michio Horiuchi, Yuichiro Shimizu, Masaya Tsuno
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Publication number: 20200190138Abstract: The invention provides methods of purifying and/or producing a protein. In some embodiments, a method of the present invention comprises the step of eluting a protein from a Protein L matrix by lowering a conductivity. In some embodiments, the protein is an antibody. The invention also provides an antibody.Type: ApplicationFiled: February 27, 2018Publication date: June 18, 2020Inventors: Chen CHEN, Yuichiro SHIMIZU, Tetsuya WAKABAYASHI
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Publication number: 20190391069Abstract: A flow cell includes: a cell main body having a first surface; a flow path provided in the cell main body; a convex portion provided on a second surface of the cell main body opposite to the first surface via the flow path, and having a curved surface protruding toward a side opposite to the flow path; and a reflector formed on the curved surface. Light incident on the flow path from the first surface is reflected by the reflector on the curved surface and is receivable on the first surface side.Type: ApplicationFiled: June 17, 2019Publication date: December 26, 2019Inventors: Yuichiro Shimizu, Kiyoshi Oi
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Patent number: 10386387Abstract: A probe guide plate includes a first silicon substrate having first through-holes formed therein, an insulation layer formed on the first silicon substrate and having an opening on a region in which the first through-holes are arranged, a second silicon substrate arranged on the insulation layer and having second through-holes formed at positions corresponding to the first through-holes, and a silicon oxide layer formed on exposed surfaces of the first silicon substrate and the second silicon substrate.Type: GrantFiled: January 12, 2017Date of Patent: August 20, 2019Assignees: SHINKO ELECTRIC INDUSTRIES CO., LTD., JAPAN ELECTRONIC MATERIALS CORPORATIONInventors: Kosuke Fujihara, Yuichiro Shimizu
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Patent number: 10385439Abstract: A first nitriding process step is performed in which a steel member is subjected to a nitriding process in a nitriding gas atmosphere having a nitriding potential with which a nitride compound layer having a ?? phase or an ? phase is generated, and thereafter a second nitriding process step is performed in which the steel member is subjected to a nitriding process in a nitriding gas atmosphere having a nitriding potential lower than the nitriding potential in the first nitriding process step, to thereby precipitate the ?? phase in the nitride compound layer. It is possible to generate the nitride compound layer having a desired phase mode uniformly all over a component to be treated and to manufacture a nitrided steel member high in pitting resistance and bending fatigue strength.Type: GrantFiled: September 30, 2014Date of Patent: August 20, 2019Assignee: DOWA THERMOTECH CO., LTD.Inventors: Yuichiro Shimizu, Susumu Maeda, Atsushi Kobayashi
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Patent number: 10309988Abstract: A probe guide plate includes a first silicon substrate, a first recess portion formed in an upper surface of the first silicon substrate, first through-holes formed in the first silicon substrate at a bottom of the first recess portion, a second silicon substrate directly bonded on the first silicon substrate, a second recess portion formed to face the first recess portion in a lower surface of the second silicon substrate, and second through-holes formed in the second silicon substrate at a bottom of the second recess portion and arranged to correspond to the first through-holes, A notch portion is formed at an upper end portion of an inner wall of each of the first through-holes of the first silicon substrate.Type: GrantFiled: January 17, 2017Date of Patent: June 4, 2019Assignees: SHINKO ELECTRIC INDUSTRIES CO., LTD., JAPAN ELECTRONIC MATERIALS CORPORATIONInventors: Yuichiro Shimizu, Kosuke Fujihara, Katsunori Yamagishi, Koji Nagai
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Patent number: 10261110Abstract: A probe guide plate includes: a silicon substrate including one surface and the other surface opposite to the one surface; a through hole formed through the silicon substrate to extend from the one surface of the silicon substrate to the other surface of the silicon substrate; a silicon oxide layer formed on the one surface of the silicon substrate, the other surface of the silicon substrate, and an inner wall surface of the through hole; and a protective insulating layer formed on the silicon oxide layer. The protective insulating layer is formed on at least one of the one surface and the other surface of the silicon substrate via the silicon oxide layer, and partially formed on the inner wall surface of the through hole via the silicon oxide layer.Type: GrantFiled: November 21, 2016Date of Patent: April 16, 2019Assignees: SHINKO ELECTRIC INDUSTRIES CO., LTD., JAPAN ELECTRONIC MATERIALS CORPORATIONInventors: Yuichiro Shimizu, Kosuke Fujihara, Tomoo Yamasaki, Chikaomi Mori
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Patent number: 10139430Abstract: OBJECT To improve the strength of a probe guide and improve the abrasion resistance of the probe guide. MEANS FOR SETTLEMENT A guide plate 20 is formed of a silicon plate 22 having guide holes 23 respectively adapted to support contact probes 13, the inner walls of the guide holes 23 include a guide film 25 formed on the inner wall surfaces of corresponding penetration-processed holes 24 of the silicon plate 22, the cross-sectional areas of the penetration-processed holes 24 gradually increase toward a first surface of the silicon plate 22, and the film thickness of the guide film 25 gradually increases toward the first surface of the silicon plate 22. By employing such a configuration, as compared with the tilts of the inner wall surfaces of the penetration-processed holes 24, the tilts of the inner wall surfaces of the guide holes 23 can be suppressed, and the strength of the silicon plate 20 can be improved. Accordingly, the abrasion resistance of a probe guide 100 can be improved.Type: GrantFiled: January 31, 2017Date of Patent: November 27, 2018Assignees: SHINKO ELECTRIC INDUSTRIES CO., LTD., JAPAN ELECTRONIC MATERIALS CORPORATIONInventors: Chikaomi Mori, Yuichiro Shimizu, Kosuke Fujihara
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Patent number: 9988704Abstract: A manufacturing method of a nitrided steel member and the nitrided steel member include: performing a nitriding treatment on a steel member made of a carbon steel or an alloy steel in an atmosphere of a nitriding treatment gas in which when the total pressure is set to 1, a partial pressure ratio of NH3 gas is set to 0.08 to 0.34, a partial pressure ratio of H2 gas is set to 0.54 to 0.82, and a partial pressure ratio of N2 gas is set to 0.09 to 0.18, at a flow speed of the nitriding treatment gas set to 1 m/s or more, at 500 to 620° C.; and thereby, forming an iron nitride compound layer having a thickness of 2 to 17 ?m on a surface of the steel member.Type: GrantFiled: February 10, 2017Date of Patent: June 5, 2018Assignees: DOWA THERMOTECH CO., LTD., HONDA MOTOR CO., LTD.Inventors: Yuichiro Shimizu, Atsushi Kobayashi, Susumu Maeda, Masao Kanayama, Kiyotaka Akimoto
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Publication number: 20180127863Abstract: A nitriding treatment method of a steel member, in which a nitriding treatment step is performed in which the steel member is subjected to a nitriding treatment in a nitriding gas atmosphere having a nitriding potential with which a ?? phase or ? phase iron nitride compound layer is generated on a surface of the steel member, and then, a passing step is performed in which the steel member is made to pass through an atmosphere at 425° C. to 600° C. where the iron nitride compound layer does not grow over five minutes or more, the iron nitride compound layer has the ?? phase uppermost surface layer, and the ?? phase is made to precipitate in the iron nitride compound layer by the proportion of 40% or more.Type: ApplicationFiled: March 31, 2016Publication date: May 10, 2018Applicant: DOWA THERMOTECH CO., LTD.Inventors: Yuichiro SHIMIZU, Katsushige SHIMIZU, Kiyotaka AKIMOTO
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Patent number: 9859201Abstract: A wiring substrate includes a first wiring structure and a second wiring structure stacked thereon. The first wiring structure includes a first insulation layer and a via wiring extending through the first insulation layer. The second wiring structure includes a first wiring layer formed on the first insulation layer and the via wiring, and a first plane layer stacked on the first insulation layer and at least partially grid-shaped in a plan view to define second through holes. A second insulation layer is stacked on the first insulation layer to fill the second through holes and cover the first plane layer and the first wiring layer. The second wiring structure has a higher wiring density than the first wiring structure. The second through holes each include a lower open end and an upper open end having a smaller open width than the lower open end.Type: GrantFiled: June 4, 2015Date of Patent: January 2, 2018Assignee: Shinko Electric Industries Co., Ltd.Inventors: Noriyoshi Shimizu, Kiyoshi Oi, Yuichiro Shimizu
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Patent number: 9829509Abstract: A probe guide plate used for a semiconductor inspection apparatus that inputs and outputs an electrical signal for inspecting an object via a probe needle, the probe guide plate includes a silicon substrate provided with a through hole that penetrates the silicon substrate from one surface to another surface through which the probe needle is inserted, the through hole including a first tapered portion provided at an end portion at the one surface side such that the hole size of which increases as it approaches the one surface, and a second tapered portion provided at an end portion at the other surface side such that the hole size of which increases as it approaches the other surface; and a silicon oxide film formed on an inner wall surface of the through hole including the first tapered portion and the second tapered portion.Type: GrantFiled: May 2, 2014Date of Patent: November 28, 2017Assignee: SHINKO ELECTRIC INDUSTRIES CO., LTD.Inventors: Yuichiro Shimizu, Kosuke Fujihara
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Patent number: 9783879Abstract: A nitrided steel member including an iron nitride compound layer formed on a surface of a steel member having predetermined components, wherein: in X-ray diffraction peak intensity IFe4N (111) of a (111) crystal plane of Fe4N and X-ray diffraction peak intensity IFe3N (111) of a (111) crystal plane of Fe3N, which are measured on a surface of the nitrided steel member by X-ray diffraction, an intensity ratio expressed by IFe4N (111)/{IFe4N (111)+IFe3N (111)} is 0.5 or more; Vickers hardness of the iron nitride compound layer is 900 or less, Vickers hardness of a base metal immediately under the iron nitride compound layer is 700 or more, and a difference between the Vickers hardness of the iron nitride compound layer and the Vickers hardness of the base metal is 150 or less; and a thickness of the iron nitride compound layer is 2 to 17 ?m.Type: GrantFiled: April 17, 2013Date of Patent: October 10, 2017Assignees: DOWA THERMOTECH CO., LTD., HONDA MOTOR CO., LTD., NIPPON STEEL & SUMITOMO METAL CORPORATIONInventors: Yuichiro Shimizu, Atsushi Kobayashi, Susumu Maeda, Masao Kanayama, Hideki Imataka, Masato Yuya, Yuya Gyotoku, Kiyotaka Akimoto
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Patent number: 9746433Abstract: An X-ray fluorescence spectrometer includes: an X-ray source (3) to irradiate, with primary X-rays (6), a sample (1) that is multiple nanoparticles placed on a substrate (10); an irradiation angle adjustment unit (5) to adjust an irradiation angle at which a surface (10a) of the substrate is irradiated; a detection unit (8) to measure an intensity of fluorescent X-rays (7) from the sample (1); a peak position calculation unit (11) to generate a sample profile representing change of the intensity of the fluorescent X-rays (7) against change of the irradiation angle, and to calculate a peak irradiation angle position; a particle diameter calibration curve generation unit (21) to generate a calibration curve; and a particle diameter calculation unit (22) to calculate a particle diameter of nanoparticles of an unknown sample (1) by applying the peak irradiation angle position of the unknown sample (1) to the calibration curve.Type: GrantFiled: December 27, 2016Date of Patent: August 29, 2017Assignee: Rigaku CorporationInventors: Takashi Yamada, Yuichiro Shimizu
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Publication number: 20170242057Abstract: OBJECT To improve the strength of a probe guide and improve the abrasion resistance of the probe guide. MEANS FOR SETTLEMENT A guide plate 20 is formed of a silicon plate 22 having guide holes 23 respectively adapted to support contact probes 13, the inner walls of the guide holes 23 include a guide film 25 formed on the inner wall surfaces of corresponding penetration-processed holes 24 of the silicon plate 22, the cross-sectional areas of the penetration-processed holes 24 gradually increase toward a first surface of the silicon plate 22, and the film thickness of the guide film 25 gradually increases toward the first surface of the silicon plate 22. By employing such a configuration, as compared with the tilts of the inner wall surfaces of the penetration-processed holes 24, the tilts of the inner wall surfaces of the guide holes 23 can be suppressed, and the strength of the silicon plate 20 can be improved. Accordingly, the abrasion resistance of a probe guide 100 can be improved.Type: ApplicationFiled: January 31, 2017Publication date: August 24, 2017Applicants: Japan Electronic Materials Corporation, Shinko Electric Industries Co., Ltd.Inventors: Chikaomi Mori, Yuichiro Shimizu, Kosuke Fujihara
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Publication number: 20170205445Abstract: A probe guide plate includes a first silicon substrate, a first recess portion formed in an upper surface of the first silicon substrate, first through-holes formed in the first silicon substrate at a bottom of the first recess portion, a second silicon substrate directly bonded on the first silicon substrate, a second recess portion formed to face the first recess portion in a lower surface of the second silicon substrate, and second through-holes formed in the second silicon substrate at a bottom of the second recess portion and arranged to correspond to the first through-holes, A notch portion is formed at an upper end portion of an inner wall of each of the first through-holes of the first silicon substrate.Type: ApplicationFiled: January 17, 2017Publication date: July 20, 2017Inventors: Yuichiro Shimizu, Kosuke Fujihara, Katsunori Yamagishi, Koji Nagai