Abstract: A probe guide plate includes a first silicon substrate having first through-holes formed therein, an insulation layer formed on the first silicon substrate and having an opening on a region in which the first through-holes are arranged, a second silicon substrate arranged on the insulation layer and having second through-holes formed at positions corresponding to the first through-holes, and a silicon oxide layer formed on exposed surfaces of the first silicon substrate and the second silicon substrate.

Abstract: A manufacturing method of a nitrided steel member and the nitrided steel member include: performing a nitriding treatment on a steel member made of a carbon steel or an alloy steel in an atmosphere of a nitriding treatment gas in which when the total pressure is set to 1, a partial pressure ratio of NH3 gas is set to 0.08 to 0.34, a partial pressure ratio of H2 gas is set to 0.54 to 0.82, and a partial pressure ratio of N2 gas is set to 0.09 to 0.18, at a flow speed of the nitriding treatment gas set to 1 m/s or more, at 500 to 620° C.; and thereby, forming an iron nitride compound layer having a thickness of 2 to 17 ?m on a surface of the steel member.

Abstract: A probe guide plate includes: a silicon substrate including one surface and the other surface opposite to the one surface; a through hole formed through the silicon substrate to extend from the one surface of the silicon substrate to the other surface of the silicon substrate; a silicon oxide layer formed on the one surface of the silicon substrate, the other surface of the silicon substrate, and an inner wall surface of the through hole; and a protective insulating layer formed on the silicon oxide layer. The protective insulating layer is formed on at least one of the one surface and the other surface of the silicon substrate via the silicon oxide layer, and partially formed on the inner wall surface of the through hole via the silicon oxide layer.

Abstract: An X-ray fluorescence spectrometer includes: an X-ray source (3) to irradiate, with primary X-rays (6), a sample (1) that is multiple nanoparticles placed on a substrate (10); an irradiation angle adjustment unit (5) to adjust an irradiation angle at which a surface (10a) of the substrate is irradiated; a detection unit (8) to measure an intensity of fluorescent X-rays (7) from the sample (1); a peak position calculation unit (11) to generate a sample profile representing change of the intensity of the fluorescent X-rays (7) against change of the irradiation angle, and to calculate a peak irradiation angle position; a particle diameter calibration curve generation unit (21) to generate a calibration curve; and a particle diameter calculation unit (22) to calculate a particle diameter of nanoparticles of an unknown sample (1) by applying the peak irradiation angle position of the unknown sample (1) to the calibration curve.

Abstract: The present invention provides a nitrided steel member and manufacturing method thereof. the nitrided steel member including: an iron nitride compound layer formed on a surface of a steel member made of carbon steel for machine structural use or alloy steel for machine structural use, in which with regard to X-ray diffraction peak intensity IFe4N (111) of the (111) crystal plane of Fe4N and X-ray diffraction peak intensity IFe3N (111) of the (111) crystal plane of Fe3N obtained by measuring a surface of the nitrided steel member by X-ray diffraction, an intensity ratio represented by IFe4N(111)/{IFe4N (111)+IFe3N (111)} is 0.5 or more, and a thickness of the iron nitride compound layer is 2 to 17 ?m.

Abstract: A first nitriding process step is performed in which a steel member is subjected to a nitriding process in a nitriding gas atmosphere having a nitriding potential with which a nitride compound layer having a ?? phase or an e phase is generated, and thereafter a second nitriding process step is performed in which the steel member is subjected to a nitriding process in a nitriding gas atmosphere having a nitriding potential lower than the nitriding potential in the first nitriding process step, to thereby precipitate the ?? phase in the nitride compound layer. It is possible to generate the nitride compound layer having a desired phase mode uniformly all over a component to be treated and to manufacture a nitrided steel member high in pitting resistance and bending fatigue strength.

Abstract: A wiring board includes a substrate body provided with a through hole penetrating the substrate body from one surface to another surface; and a through wiring formed in the through hole and including a first metal layer formed on a part of an inner side surface of the through hole at the one surface side, a first wiring layer that covers the first metal layer to fill a part of the through hole at the one surface side, a second metal layer continuously formed on the rest part of the inner side surface of the through hole at the other surface side and on an end portion of the first wiring layer at the other surface side, and a second wiring layer that covers the second metal layer to fill a part of the through hole at the other surface side.

Abstract: There is provided a wiring substrate. The wiring substrate includes: a first wiring layer; a first insulating layer on the first wiring layer; a first coupling agent layer on the first insulating layer; a first copper/tin alloy layer on the first coupling agent layer; a first via hole formed through the first copper/tin alloy layer, the first coupling agent layer, and the first insulating layer to reach the first wiring layer; a metal catalyst provided on only a sidewall of the first via hole; a seed layer provided on the metal catalyst and formed only on the sidewall of the first via hole; and a metal plating layer formed on the first copper/tin alloy layer and the seed layer and filled in the first via hole to contact the first wiring layer.

Abstract: A wiring substrate includes a first wiring structure and a second wiring structure stacked thereon. The first wiring structure includes a first insulation layer and a via wiring extending through the first insulation layer. The second wiring structure includes a first wiring layer formed on the first insulation layer and the via wiring, and a first plane layer stacked on the first insulation layer and at least partially grid-shaped in a plan view to define second through holes. A second insulation layer is stacked on the first insulation layer to fill the second through holes and cover the first plane layer and the first wiring layer. The second wiring structure has a higher wiring density than the first wiring structure. The second through holes each include a lower open end and an upper open end having a smaller open width than the lower open end.

Abstract: Provided a microdevice capable of performing analysis quickly and at a high level of sensitivity even when a minute amount of sample solution is used. The microdevice is equipped with a rotation board, a reaction field provided on the rotation board, and an introduction portion for introducing a solution into the reaction field. The microdevice is characterized in that the following angle is always 45 to 90°: an angle of a part of a wall surface of the reaction field where the centrifugal force has the greatest effect with respect to the direction of the centrifugal force generated when the rotation board is rotated.

Abstract: There is provided a power supply circuit. A switching regulator is configured to drop a battery voltage to a first specific voltage. A series regulator includes a switching element and a capacitor connected at an output stage of the switching element. The series regulator is configured to drop the first specific voltage to a second specific voltage and output the second specific voltage. A control circuit is configured to adjust an amount of electric charge to be accumulated in the capacitor according to a voltage value of the first specific voltage.

Abstract: A method of manufacturing a wiring substrate, includes obtaining a laminated body in which a first copper tin alloy layer and a copper layer are arranged in sequence on a first coupling agent layer, on a first insulating resin layer, forming a seed layer on the copper layer, forming a plating resist in which an opening portion is provided on the seed layer, forming a metal plating layer in the opening portion of the plating resist by applying an electroplating that utilizes the seed layer as a plating power feeding path, removing the plating resist, and forming a first wiring layer on the first coupling agent layer by etching the seed layer, the copper layer, and the first copper tin alloy layer while using the metal plating layer as a mask.

Abstract: An idling stop device installed in a vehicle includes a microcomputer, a detector, a storage, and a controller. The microcomputer automatically stops an engine of the vehicle when a prescribed stopping condition is satisfied, and automatically activates a starter motor of the engine when a prescribed activating condition is satisfied. The detector detects whether a drive voltage of the microcomputer, which is obtained by dropping a voltage of a battery of the vehicle is less than a threshold value. The storage stores, irrespective of a state of the microcomputer, information indicating that the detector has detected that the drive voltage is less than the threshold value. The controller drops an increasing speed of a current for driving the starter motor when the microcomputer activates the stator motor under the condition that the information is stored in the storage.

Abstract: A wiring board includes a substrate body provided with a through hole penetrating the substrate body from one surface to another surface; and a through wiring formed in the through hole and including a first metal layer formed on a part of an inner side surface of the through hole at the one surface side, a first wiring layer that covers the first metal layer to fill a part of the through hole at the one surface side, a second metal layer continuously formed on the rest part of the inner side surface of the through hole at the other surface side and on an end portion of the first wiring layer at the other surface side, and a second wiring layer that covers the second metal layer to fill a part of the through hole at the other surface side.

Abstract: A nitrided steel member including an iron nitride compound layer formed on a surface of a steel member having predetermined components, wherein: in X-ray diffraction peak intensity IFe4N (111) of a (111) crystal plane of Fe4N and X-ray diffraction peak intensity IFe3N (111) of a (111) crystal plane of Fe3N, which are measured on a surface of the nitrided steel member by X-ray diffraction, an intensity ratio expressed by IFe4N (111)/{IFe4N (111)+IFe3N (111)} is 0.5 or more; Vickers hardness of the iron nitride compound layer is 900 or less, Vickers hardness of a base metal immediately under the iron nitride compound layer is 700 or more, and a difference between the Vickers hardness of the iron nitride compound layer and the Vickers hardness of the base metal is 150 or less; and a thickness of the iron nitride compound layer is 2 to 17 ?m.

Abstract: A probe guide plate used for a semiconductor inspection apparatus that inputs and outputs an electrical signal for inspecting an object via a probe needle, the probe guide plate includes a silicon substrate provided with a through hole that penetrates the silicon substrate from one surface to another surface through which the probe needle is inserted, the through hole including a first tapered portion provided at an end portion at the one surface side such that the hole size of which increases as it approaches the one surface, and a second tapered portion provided at an end portion at the other surface side such that the hole size of which increases as it approaches the other surface; and a silicon oxide film formed on an inner wall surface of the through hole including the first tapered portion and the second tapered portion.

Abstract: An idling stop apparatus is provided which can prevent a voltage of a battery from being lowered even when a microcomputer is reset. In an idling stop apparatus when a reset condition is established, reset information indicating that the reset condition is established is stored in a latch circuit and a microcomputer disables an idling stop function when the reset information is stored. The reset information is stored in the latch circuit even when the microcomputer is being reset or even after the microcomputer is reset. Accordingly, the microcomputer after the reset can disable the idling stop function. As a result, it is possible to prevent the voltage of the battery from being lowered due to the idling stop function.

Abstract: Reset request from external are held at a reset request holding unit having holding units connected in series; a reset switching unit performs a logical product operation of all of outputs of the holding units to set it as an asynchronous reset request, setting an output of the holding unit at a final stage of the holding units as a synchronous reset request, performing a logical product operation of the asynchronous reset request and the synchronous reset request, and outputs an operation result; the asynchronous reset request is masked in a synchronous reset mode; and a reset signal is output from a reset output unit based on the operation result at the reset switching unit.

Abstract: In order to realize an accurate electrochemical measurement without a peak caused due to a silver chloride complex ion, an electrochemical measurement electrode of the present invention which measures an electrochemical active substance in a sample solution containing a chloride ion includes (i) a working electrode, (ii) a reference electrode made of silver and silver chloride, and (iii) a silver ion capturing material which captures a silver ion out of a silver chloride complex ion generated in the reference electrode.

Abstract: There is provided a wiring substrate. The wiring substrate includes: a first wiring layer; a first insulating layer on the first wiring layer; a first coupling agent layer on the first insulating layer; a first copper/tin alloy layer on the first coupling agent layer; a first via hole formed through the first copper/tin alloy layer, the first coupling agent layer, and the first insulating layer to reach the first wiring layer; a metal catalyst provided on only a sidewall of the first via hole; a seed layer provided on the metal catalyst and formed only on the sidewall of the first via hole; and a metal plating layer formed on the first copper/tin alloy layer and the seed layer and filled in the first via hole to contact the first wiring layer.