Abstract: A semiconductor manufacturing apparatus including: a first device; one or more sensors; a first calculation circuit that calculates one or more feature quantities of the first device from the detected physical quantities; and a failure prediction circuit that compares the one or more feature quantities with a plurality of pieces of model data of a temporal change in one or more feature quantities until the first device fails, decides a piece of model data with the minimum difference from the calculated one or more feature quantities among the plurality of pieces of model data, calculates predicted failure time from a difference between a failure point in time and a point in time at which a difference from the calculated one or more feature quantities is the minimum in the piece of model data.

Abstract: A plating apparatus 10 includes a rectifier 18 configured to apply a DC current to a substrate, and a plating apparatus control unit 30 that instructs the rectifier 18 on a value of the DC current. The plating apparatus control unit 30 has a setting unit 32 for setting a current value, a storage unit 34 that stores a relational expression between an instructed current value on which the rectifier 18 is instructed and an actual current value which the rectifier 18 outputs in accordance with the instructed current value, a calculation unit 38 that corrects the current value set by the setting unit 32 on the basis of the above-mentioned relational expression to calculate a corrected current value, and an instruction unit 36 that instructs the rectifier 18 on the corrected current value calculated by the calculation unit 38.

Abstract: An Sn alloy plating apparatus is disclosed. The apparatus includes a plating bath configured to store an Sn alloy plating solution therein with an insoluble anode and a substrate immersed in the Sn alloy plating solution, an Sn dissolving having an anion exchange membrane therein which isolates an anode chamber, in which an Sn anode is disposed, and a cathode chamber, in which a cathode is disposed, from each other, a pure water supply structure configured to supply pure water to the anode chamber and the cathode chamber, a methanesulfonic acid solution supply structure configured to supply a methanesulfonic acid solution, containing a methanesulfonic acid, to the anode chamber and the cathode chamber, and an Sn replenisher supply structure configured to supply an Sn replenisher, produced in the anode chamber and containing Sn ions and a methanesulfonic acid, to the plating bath.

Abstract: An improved apparatus for adding powder comprising at least a metal, such as copper, to a plating solution, and supplying the plating solution to a plating tank is disclosed. The apparatus includes a hopper having an inlet which is connectable to a powder conduit of a powder container holding the powder therein, a feeder which communicates with a bottom opening of the hopper, a motor coupled to the feeder, and a plating-solution tank coupled to an outlet of the feeder and configured to dissolve the powder in the plating solution.

Abstract: A resin composition contains an aromatic polycarbonate resin, an aromatic polyester resin, an acrylic triblock copolymer composed of a polymer block containing an acrylic acid ester unit and a polymer block containing a methacrylic acid ester unit, a glycidyl group-containing polyethylene copolymer, an organic phosphorus flame retardant, and a flame retardant antidrip agent.

Abstract: An Sn alloy plating apparatus is disclosed which can relatively easily perform control of an Sn alloy plating solution, including control of the Sn ion concentration and the acid concentration of the plating solution.

Abstract: There is provided a method of adjusting a plating apparatus and a measuring apparatus that can obtain position adjustment amounts/a position adjustment amount of a substrate holder, an anode holder, a regulation plate, and/or a paddle without carrying out plating treatment. There is provided the method of adjusting the plating apparatus that has a plating bath configured to be able to hold the substrate holder, the anode holder, and an electric field adjusting plate.

Abstract: A resin composition includes a low molecular polycarbonate resin having a weight average molecular weight from 20,000 to 40,000, a high molecular polycarbonate resin having a weight average molecular weight from 50,000 to 70,000, and a polyethylene terephthalate resin having an IV value from 0.5 to 0.8, wherein a weight ratio between a content of the low molecular polycarbonate resin and a content of the high molecular polycarbonate resin is in a range of 30:70 to 70:30.

Abstract: There is provided an electroplating method for a through-hole. The method includes: a first plating process, a second plating process, and a third plating process. The first plating process is a plating process of forming a metal film with a uniform thickness in the through-hole to reduce a diameter of the through-hole, the second plating process is a plating process of blocking up a central portion of the through-hole with the metal film using a PR pulsed current, and the third plating process is a plating process of completely filling the through-hole with the metal film using the plating current whose value is equal to or larger than a forward-current value of the PR pulsed current used in the second plating process.

Abstract: A resin composition contains an aromatic polycarbonate resin, an aromatic polyester resin, an acrylic triblock copolymer composed of a polymer block containing an acrylic acid ester unit and a polymer block containing a methacrylic acid ester unit, a glycidyl group-containing polyethylene copolymer, an organic phosphorus flame retardant, and a flame retardant antidrip agent.

Abstract: A resin composition includes a low molecular polycarbonate resin having a weight average molecular weight from 20,000 to 40,000, a high molecular polycarbonate resin having a weight average molecular weight from 50,000 to 70,000, and a polyethylene terephthalate resin having an IV value from 0.5 to 0.8, wherein a weight ratio between a content of the low molecular polycarbonate resin and a content of the high molecular polycarbonate resin is in a range of 30:70 to 70:30.

Abstract: A product storage apparatus for collectively storing processed products includes an endless loop member that is circularly moved along a path, plural holders each of which is fixed to the endless loop member with a predetermined pitch and holds the processed products, and a drive unit that circularly moves the endless loop member to circularly move the plurality of holders intermittently by stopping the endless loop member temporarily at every move by a mathematical product of the pitch and a natural number n. According to the product storage apparatus, it is possible to store the processed products with high space efficiency.

Abstract: A plating apparatus 10 includes a rectifier 18 configured to apply a DC current to a substrate, and a plating apparatus control unit 30 that instructs the rectifier 18 on a value of the DC current. The plating apparatus control unit 30 has a setting unit 32 for setting a current value, a storage unit 34 that stores a relational expression between an instructed current value on which the rectifier 18 is instructed and an actual current value which the rectifier 18 outputs in accordance with the instructed current value, a calculation unit 38 that corrects the current value set by the setting unit 32 on the basis of the above-mentioned relational expression to calculate a corrected current value, and an instruction unit 36 that instructs the rectifier 18 on the corrected current value calculated by the calculation unit 38.

Abstract: An Sn alloy plating apparatus is disclosed which can relatively easily perform control of an Sn alloy plating solution, including control of the Sn ion concentration and the acid concentration of the plating solution.

Abstract: An Sn alloy plating apparatus is disclosed. The apparatus includes a plating bath configured to store an Sn alloy plating solution therein with an insoluble anode and a substrate immersed in the Sn alloy plating solution, an Sn dissolving having an anion exchange membrane therein which isolates an anode chamber, in which an Sn anode is disposed, and a cathode chamber, in which a cathode is disposed, from each other, a pure water supply structure configured to supply pure water to the anode chamber and the cathode chamber, a methanesulfonic acid solution supply structure configured to supply a methanesulfonic acid solution, containing a methanesulfonic acid, to the anode chamber and the cathode chamber, and an Sn replenisher supply structure configured to supply an Sn replenisher, produced in the anode chamber and containing Sn ions and a methanesulfonic acid, to the plating bath.

Abstract: A product storage apparatus for collectively storing processed products includes an endless loop member that is circularly moved along a path, plural holders each of which is fixed to the endless loop member with a predetermined pitch and holds the processed products, and a drive unit that circularly moves the endless loop member to circularly move the plurality of holders intermittently by stopping the endless loop member temporarily at every move by a mathematical product of the pitch and a natural number n. According to the product storage apparatus, it is possible to store the processed products with high space efficiency.

Abstract: A substrate holder includes a fixed holding member and a movable holding member for detachably holding a substrate by gripping a peripheral portion of the substrate therebetween, and an inner seal member and an outer seal member which are fixed to the movable holding member. When the substrate is held by the movable holding member and the fixed holding member, the inner and outer seal members seal the connection between the movable holding member and a peripheral portion of the substrate and the connection between the movable holding member and the fixed holding member, respectively. The movable holding member includes a seal holder, and the inner seal member and the outer seal member are fixed between the seal holder and a fixing ring secured to the seal holder.

Abstract: An Sn alloy plating apparatus includes: a plating bath having a cathode chamber for holding therein an Sn alloy plating solution in which the substrate is to be immersed and an anode chamber for holding therein an anolyte containing Sn ions and an acid; an Sn anode located in the anode chamber; and an electrolytic solution supply line configured to supply an electrolytic solution containing the acid into the anode chamber such that a Sn ion concentration of the anolyte in the anode chamber is kept not less than a predetermined value and a concentration of the acid in the anolyte is kept not less than a predetermined acceptable value. The electrolytic solution supply line supplies the electrolytic solution into the anode chamber to increase an amount of the anolyte in the anode chamber and supply the anolyte into the Sn alloy plating solution by the increased amount.

Abstract: There is provided an electroplating method for a through-hole. The method includes: a first plating process, a second plating process, and a third plating process. The first plating process is a plating process of forming a metal film with a uniform thickness in the through-hole to reduce a diameter of the through-hole, the second plating process is a plating process of blocking up a central portion of the through-hole with the metal film using a PR pulsed current, and the third plating process is a plating process of completely filling the through-hole with the metal film using the plating current whose value is equal to or larger than a forward-current value of the PR pulsed current used in the second plating process.

Abstract: A plating apparatus plates a substrate with Sn alloy to form an Sn alloy film on a surface of the substrate. The apparatus includes: a plating bath for retaining a plating solution therein, the substrate being immersed in the plating solution in a position opposite to an insoluble anode; a plating solution dialysis line for extracting the plating solution from the plating bath and returning the plating solution to the plating bath; a dialysis cell provided in the plating solution dialysis line and configured to remove a free acid from the plating solution by dialysis using an anion exchange membrane; a free acid concentration analyzer; and a controller for controlling a flow rate of the plating solution flowing through the plating solution dialysis line based on the concentration of the free acid measured by the free acid concentration analyzer.