Abstract: A substrate with a through-hole is immersed in a plating solution in a plating tank. A pair of anodes are disposed in the plating solution in the plating tank in facing relation to face and reverse sides, respectively, of the substrate in the plating solution. A plurality of plating processes are performed on the face and reverse sides by supplying pulsed currents respectively between the face side of the substrate and one of the anodes which faces the face side of the substrate, and between the reverse side of the substrate and the other anode which faces the reverse side of the substrate. A reverse electrolyzing process is performed on the face and reverse sides between adjacent plating processes by supplying currents in an opposite direction to the pulsed currents respectively between the face side of the substrate and one of the anodes, and between the reverse side of the substrate and the other anode.

Abstract: A substrate holder enables easy maintenance, especially easy replacement of seal members. The substrate holder includes a fixed holding member and a movable holding member for detachably holding a substrate by gripping a peripheral portion of the substrate therebetween, and an inner seal member and an outer seal member which are fixed to the movable holding member and which, when the substrate is held by the movable holding member and the fixed holding member, seal the connection between the movable holding member and a peripheral portion of the substrate and the connection between the movable holding member and the fixed holding member, respectively. The movable holding member includes a seal holder, and the inner seal member and the outer seal member are fixed between the seal holder and a fixing ring secured to the seal holder.

Abstract: A conducting belt is used with an anode holder for supplying an electric current to an anode for plating a surface of a substrate such as a semiconductor wafer. The anode and the substrate are vertically disposed so as to face each other in a plating tank of a plating apparatus. The conducting belt includes a belt capable of contacting an outer circumferential edge of the anode and holding the anode.

Abstract: A conducting belt is used with an anode holder for supplying an electric current to an anode for plating a surface of a substrate such as a semiconductor wafer. The anode and the substrate are vertically disposed so as to face each other in a plating tank of a plating apparatus. The conducting belt includes a belt capable of contacting an outer circumferential edge of the anode and holding the anode.

Abstract: There is provided a method of performing a surface treatment, such as coating, denaturation, modification and etching, on a surface of a substrate. The method comprises the steps of bringing a surface treatment gas into contact with a surface of a substrate, and irradiating the surface of the substrate with a fast particle beam to enhance an activity of the surface and/or the surface treatment gas, thereby facilitating a reaction between the surface and the gas. The fast particle beam may be selected from a group consisting of an electron beam, a charged particle beam, an atomic beam and molecular beam. For example, during a coating operation, chemical deposition of predetermined component elements of the gas onto the surface is effected and a predetermined portion of the surface of the substrate is irradiated with a particle beam to form a coating layer on the predetermined portion.

Abstract: A material table 39 supporting materials W is provided so as to be able to move between a plate material taking-in/out area 11 and material wait area 13, and when the material table 39 is positioned in the plate material taking-in/out area 11, the material table 39 is positioned in a lower position adjacent to an upper end portion of a slat conveyor 33.

Abstract: A trap apparatus is optimum for trapping a material gas discharged from a vapor deposition apparatus for depositing in a vapor phase thin films of high-dielectric or ferroelectric such as barium/strontium titanates on substrates. The trap apparatus is disposed downstream of a vacuum process chamber. The vacuum process chamber is for processing a substrate. The trap apparatus is for trapping a component having a low vapor pressure contained in a gas discharged from the vacuum process chamber. The trap apparatus includes a trap container for introducing the gas discharged from the vacuum process chamber, and a cooling device provided in the trap container for cooling the gas to a temperature equal to or lower than a condensing temperature of a gas component which is contained in the gas and easily liquidized.

Abstract: The present invention relates to a method and apparatus for forming interconnects on a substrate such as a semiconductor wafer by filling a conductive material such as copper (Cu) in fine recesses formed in a surface of the substrate. A method for forming interconnects comprises providing a substrate and a target composed of a conductive material in confrontation with each other in a chamber, introducing a sputtering gas into the chamber while a high voltage is applied between the substrate and the target to cause the sputtering gas to collide with the target, and depositing particles of the conductive material emitted from the target on the surface of the substrate to form a thin film, while sputter-etching the thin film by reflection sputtering gas molecules reflected from the target and having high energy.

Abstract: A substrate processing apparatus forms a thin film of high-dielectric or ferroelectric such as barium/strontium titanates, or a copper film for wiring on a substrate, and has a gas ejection head for individually introducing at least two gases including a material gas and ejecting the gases toward a substrate to be processed. The gas ejection head has at least two gas passageways for individually introducing the two gases, and at least two temperature control devices for individually controlling temperatures of the gases flowing through the gas passageways.

Abstract: The present invention relates to a method and apparatus for forming interconnects on a substrate such as a semiconductor wafer by filling a conductive material such as copper (Cu) in fine recesses formed in a surface of the substrate. A method for forming interconnects comprises providing a substrate and a target composed of a conductive material in confrontation with each other in a chamber, introducing a sputtering gas into the chamber while a high voltage is applied between the substrate and the target to cause the sputtering gas to collide with the target, and depositing particles of the conductive material emitted from the target on the surface of the substrate to form a thin film, while sputter-etching the thin film by reflection sputtering gas molecules reflected from the target and having high energy.

Abstract: There is provided a method of applying a surface treatment, such as coating, denaturation, modification and etching, to a surface of a substrate. The method comprises the steps of bringing a surface treatment gas into contact with a surface of a substrate, and irradiating the surface of the substrate with a fast particle beam to enhance an activity of the surface and/or the surface treatment gas thereby facilitating the reaction between the surface and the gas. The fast particle beam may be selected from a group consisting of an electron beam, a charged particle beam, an atomic beam and molecular beam. For example, in a coating operation, chemically deposition of predetermined component elements of the gas onto the surface is effected and a predetermined portion in the surface of the substrate is irradiated with a particle beam to form a coating layer on the predetermined portion.

Abstract: A compact vaporizer system is presented to produce a high quality vapor feed from a liquid feed to be delivered to a chemical vapor deposition processing chamber to produce thin film devices based on highly dielectric or ferroelectric materials such as BaTiO3, SrTiO3 and other such materials. The vaporization apparatus comprises a feed tank for storing the liquid feed; feed delivery means for transporting the liquid feed by way of a feed delivery path; a vaporizer section disposed in the delivery path comprising a high temperature heat exchanger having a capillary tube for transporting the liquid feed and a heat source for externally heating the capillary tube; and a vaporization prevention section disposed upstream of the vaporizer section for preventing effects of the vaporizer section to the liquid feed within the vaporization prevention section.

Abstract: A compact vaporizer system is presented to produce a high quality vapor feed from a liquid feed to be delivered to a chemical vapor deposition processing chamber to produce thin film devices based on highly dielectric or ferroelectric materials such as BaTiO3, SrTiO3 and other such materials. The vaporization apparatus comprises a feed tank for storing the liquid feed; feed delivery means for transporting the liquid feed by way of a feed delivery path; a vaporizer section disposed in the delivery path comprising a high temperature heat exchanger having a capillary tube for transporting the liquid feed and a heat source for externally heating the capillary tube; and a vaporization prevention section disposed upstream of the vaporizer section for preventing effects of the vaporizer section to the liquid feed within the vaporization prevention section.

Abstract: A compact vaporizer system is presented to produce a high quality vapor feed from a liquid feed to be delivered to a chemical vapor deposition processing chamber to produce thin film devices based on highly dielectric or ferroelectric materials such as BaTiO3, SrTiO3 and others such materials. The vaporization apparatus comprises a feed tank for storing the liquid feed; feed delivery means for transporting the liquid feed by way of a feed delivery path; a vaporizer section disposed in the delivery path comprising a high temperature heat exchanger having a capillary tube for transporting the liquid feed and a heat source for externally heating the capillary tube; and a vaporization prevention section disposed upstream of the vaporizer section for preventing heating effects of the vaporizer section to the liquid feed within the vaporization prevention section.