Abstract: A high-frequency module according to the present embodiment includes a substrate, a circuit board, and a waveguide. The substrate has an input-output portion for high-frequency signals on one surface thereof. The circuit board has a dielectric waveguide line with its end face exposed, and is placed on the one surface of the substrate such that a virtual plane extending beyond the end face is intersected by the one surface of the substrate. The waveguide has openings at ends thereof, in which one of the openings is connected to the end face of the dielectric waveguide line, and the other opening is connected to the input-output portion of the substrate.

Abstract: A high-frequency module according to the present embodiment includes a substrate, a circuit board, and a resonator. The substrate has an input-output portion for high-frequency signals formed on one surface thereof. The circuit board includes a dielectric waveguide line with its end face exposed, and is placed on the one surface of the substrate such that a virtual plane extending beyond the end face is intersected by the one surface of the substrate. The resonator includes input-output end portions for high-frequency signals at ends thereof, in which one of the input-output end portions is connected to the end face of the dielectric waveguide line, and the other thereof is connected to the input-output portion of the substrate.

Abstract: A substrate; a gate electrode formed above the substrate; a gate insulating film formed above the gate electrode; a crystalline silicon semiconductor layer formed above the gate insulating film; an amorphous silicon semiconductor layer formed above the crystalline silicon semiconductor layer; an organic protective film made of an organic material and formed above the amorphous silicon semiconductor layer; and a source electrode and a drain electrode formed above the amorphous silicon semiconductor layer interposing the organic protective film are included, and a charge density of the negative carriers in the amorphous silicon semiconductor layer is at least 3×1011 cm?2.

Abstract: The invention relates to a high-frequency transmission line connection structure, a circuit board having the connection structure, a high-frequency module having the circuit board, and a radar apparatus. A first laminated waveguide sub-line part (21) includes a pair of main conductor layers that oppose each other in a thickness direction with a dielectric layer (31) having the same thickness as a dielectric layer (31) of a microstrip line (1) interposed therebetween. A second laminated waveguide sub-line part (22) includes dielectric layers (31, 32) thicker than the dielectric layer of the first laminated waveguide sub-line part (21). A laminated waveguide main-line part (23) includes dielectric layers (31, 32, 33) thicker than the dielectric layers of the second laminated waveguide sub-line part (22). A conversion part (10) connected to the microstrip line (1) is formed by integrating with an upper main conductor layer constituting the respective line parts.

Abstract: A high-frequency module according to the present embodiment includes a substrate, a circuit board, and a resonator. The substrate has an input-output portion for high-frequency signals formed on one surface thereof. The circuit board includes a dielectric waveguide line with its end face exposed, and is placed on the one surface of the substrate such that a virtual plane extending beyond the end face is intersected by the one surface of the substrate. The resonator includes input-output end portions for high-frequency signals at ends thereof, in which one of the input-output end portions is connected to the end face of the dielectric waveguide line, and the other thereof is connected to the input-output portion of the substrate.

Abstract: A high-frequency module according to the present embodiment includes a substrate, a circuit board, and a waveguide. The substrate has an input-output portion for high-frequency signals on one surface thereof. The circuit board has a dielectric waveguide line with its end face exposed, and is placed on the one surface of the substrate such that a virtual plane extending beyond the end face is intersected by the one surface of the substrate. The waveguide has openings at ends thereof, in which one of the openings is connected to the end face of the dielectric waveguide line, and the other opening is connected to the input-output portion of the substrate.

Abstract: The invention relates to a high-frequency transmission line connection structure, a circuit board having the connection structure, a high-frequency module having the circuit board, and a radar apparatus. A first laminated waveguide sub-line part (21) includes a pair of main conductor layers that oppose each other in a thickness direction with a dielectric layer (31) having the same thickness as a dielectric layer (31) of a microstrip line (1) interposed therebetween. A second laminated waveguide sub-line part (22) includes dielectric layers (31, 32) thicker than the dielectric layer of the first laminated waveguide sub-line part (21). A laminated waveguide main-line part (23) includes dielectric layers (31, 32, 33) thicker than the dielectric layers of the second laminated waveguide sub-line part (22). A conversion part (10) connected to the microstrip line (1) is formed by integrating with an upper main conductor layer constituting the respective line parts.

Abstract: A millimeter-wave transmitter-receiver uses an NRD guide as a fundamental configuration and includes a millimeter-wave signal oscillator, a pulse modulator, a circulator, an antenna and a mixer. In the millimeter-wave transmitter-receiver, a line length of a third dielectric guide is set so that ?=±? in which ? is a phase difference at a center frequency between a portion of a transmission millimeter-wave signal, which is reflected via a third dielectric guide on the leading end portion of the third dielectric guide and returned to leak to a third connecting portion of the circulator, and another portion of the millimeter-wave signal, which leaks from a first connecting portion to the third connecting portion of the circulator. It is possible to reduce the change in the mixer output and enhance the millimeter-wave transmission/reception performance.

Abstract: A photoelectric conversion device 1 comprises a laminated body comprising a conducting substrate 2, and an opposing electrode layer 3, a porous spacer layer 5 containing an electrolyte 4, a porous semiconductor layer 7 that adsorbs a dye 6 and contains the electrolyte 4 and a light-transmitting conductive layer 8 respectively laminated in this order on the conducting substrate 2. Consequently, the thickness of the electrolyte layer determined previously by a gap between two substrates is allowed to be determined according to the thickness of a spacer layer containing an electrolyte 4, and thus the electrolyte layer can be made both thin and uniform, and the conversion efficiency and reliability can be improved.

Abstract: Provided is a millimeter-wave transmitting/receiving apparatus of pulse-modulation type in which pulse-modulated millimeter-wave signals for transmission are prevented from being outputted to a reception system due to inner reflection or other causes. Included are: an NRD guide (basic structure) formed of a dielectric line sandwiched between parallel plate conductors; a millimeter-wave signal oscillator; a pulse modulator; a circulator; a transmitting/receiving antenna; and a mixer. At the output end of the mixer is disposed a switching device which interrupts intermediate-frequency signals in an opened state, and, when a millimeter-wave signal for transmission from the pulse modulator enters a non-output state and the condition is stabilized, changes into a closed state to pass intermediate-frequency signals.

Abstract: A high-frequency oscillator that can tune oscillation characteristics is provided. A high-frequency oscillator includes a Gunn diode serving as a high-frequency oscillation element that generates high-frequency signals, a resonator connected to the Gunn diode, a varactor diode serving as a variable-capacitance element that is disposed on the resonator and changes a resonance frequency, and a bias supply circuit that is connected to the varactor diode and supplies a bias voltage applied in order to change a capacitance. The bias supply circuit includes a trimmable chip resistor serving as a pre-set variable resistor that regulates a bias voltage applied to the varactor diode. By regulating the resistance value of the trimmable chip resistor, it is possible to control the capacitance value of the varactor diode and tune oscillation characteristics to a desired state.

Abstract: A mixer capable of keeping mixing characteristics tuned satisfactorily is provided. A coupler includes two input ends, and one or two output ends. At the output end is disposed a Schottky-barrier diode acting as a high-frequency detection element. Connected to the Schottky-barrier diode is a bias supply circuit having a trimmable chip resistor acting as a pre-set variable resistor, for controlling a bias current which passes through the Schottky-barrier diode. By adjusting the resistance of the trimmable chip resistor, it is possible to control a bias current passing through the Schottky-barrier diode, and thereby keep mixing characteristics tuned satisfactorily.

Abstract: A high-frequency oscillator that can tune oscillation characteristics is provided. A high-frequency oscillator includes a Gunn diode serving as a high-frequency oscillation element that generates high-frequency signals, a resonator connected to the Gunn diode, a varactor diode serving as a variable-capacitance element that is disposed on the resonator and changes a resonance frequency, and a bias supply circuit that is connected to the varactor diode and supplies a bias voltage applied in order to change a capacitance. The bias supply circuit includes a trimmable chip resistor serving as a pre-set variable resistor that regulates a bias voltage applied to the varactor diode. By regulating the resistance value of the trimmable chip resistor, it is possible to control the capacitance value of the varactor diode and tune oscillation characteristics to a desired state.

Abstract: An amplitude modulator in which modulator characteristics can be tuned is provided. In an amplitude modulator, between two high frequency transmission lines for transmitting high frequency signals, is provided a PIN diode which is a high frequency modulating element that modulates a high frequency signal input from one of the high frequency transmission lines and outputs the high frequency signal to an output terminal of the other of the high frequency transmission lines. A bias supply circuit includes a trimmable chip resistor which is a variable resistor for adjusting a bias current flowing through the PIN diode. By adjusting a resistance value, the bias current flowing through the PIN diode is controlled, so that it is possible to tune the modulator characteristics.

Abstract: A millimeter-wave transmitter-receiver uses an NRD guide as a fundamental configuration and includes a millimeter-wave signal oscillator, a pulse modulator, a circulator, an antenna and a mixer. In the millimeter-wave transmitter-receiver, a line length of a third dielectric guide is set so that ?=±? in which ? is a phase difference at a center frequency between a portion of a transmission millimeter-wave signal, which is reflected via a third dielectric guide on the leading end portion of the third dielectric guide and returned to leak to a third connecting portion of the circulator, and another portion of the millimeter-wave signal, which leaks from a first connecting portion to the third connecting portion of the circulator. It is possible to reduce the change in the mixer output and enhance the millimeter-wave transmission/reception performance.

Abstract: Signal wiring conductors are provided at opposing positions on the upper surface of the uppermost dielectric layer and on the lower surface of the bottommost dielectric layer, and grounding conductors surrounding grounding-conductor non-forming areas are provided on the upper surfaces of intermediate dielectric layers and the bottommost dielectric layer. These grounding conductors form an electromagnetically shielded space by being connected by grounding-conductor via conductors vertically penetrating the respective dielectric layers around the grounding-conductor non-forming areas, and signal via conductors are so provided in the respective dielectric layers as to penetrate this electromagnetically shielded space.

Abstract: Signal wiring conductors are provided at opposing positions on the upper surface of the uppermost dielectric layer and on the lower surface of the bottommost dielectric layer, and grounding conductors surrounding grounding-conductor non-forming areas are provided on the upper surfaces of intermediate dielectric layers and the bottommost dielectric layer. These grounding conductors form an electromagnetically shielded space by being connected by grounding-conductor via conductors vertically penetrating the respective dielectric layers around the grounding-conductor non-forming areas, and signal via conductors are so provided in the respective dielectric layers as to penetrate this electromagnetically shielded space.

Abstract: Provided is a millimeter-wave transmitting/receiving apparatus of pulse-modulation type in which pulse-modulated millimeter-wave signals for transmission are prevented from being outputted to a reception system due to inner reflection or other causes. Included are: an NRD guide (basic structure) formed of a dielectric line sandwiched between parallel plate conductors; a millimeter-wave signal oscillator; a pulse modulator; a circulator; a transmitting/receiving antenna; and a mixer. At the output end of the mixer is disposed a switching device which interrupts intermediate-frequency signals in an opened state, and, when a millimeter-wave signal for transmission from the pulse modulator enters a non-output state and the condition is stabilized, changes into a closed state to pass intermediate-frequency signals.

Abstract: In a mounting structure of an optical module, an optical semiconductor device such as a light emitting device or a photo sensing device and an optical fiber are mounted. The optical fiber is directly mounted in a mounting groove formed on a top face of the substrate. The optical semiconductor device is mounted on a front face of a carrier corresponding to {110} surface or {100} surface equivalent to (110) surface or (100) surface of a single crystalline silicon. The carrier has a slanted first positioning face corresponding to {111} surface equivalent to (111) surface of the single crystalline silicon. The substrate has a slanted second positioning face corresponding to {111} surface equivalent to (111) surface of the single crystalline silicon with respect to the top face corresponding to {110} surface or {100} surface of the single crystalline silicon. Thus, the front face of the carrier becomes perpendicular to the top face of the substrate.

Abstract: In a mounting structure of an optical module, an optical semiconductor device such as a light emitting device or a photo sensing device and an optical fiber are mounted. The optical fiber is directly mounted in a mounting groove formed on a top face of the substrate. The optical semiconductor device is mounted on a front face of a carrier corresponding to {110} surface or {100} surface equivalent to (110) surface or (100) surface of a single crystalline silicon. The carrier has a slanted first positioning face corresponding to {111} surface equivalent to (111) surface of the single crystalline silicon. The substrate has a slanted second positioning face corresponding to {111} surface equivalent to (111) surface of the single crystalline silicon with respect to the top face corresponding to {110} surface or {100} surface of the single crystalline silicon. Thus, the front face of the carrier becomes perpendicular to the top face of the substrate.