Abstract: A memory controller includes: a memory access part which writes, to memory, an encrypted data acquired by encrypting information data, a first code for error detection based on the information data, and a second code for error detection based on the encrypted data and which reads the encrypted data, the first and second codes from the memory during a monitoring process being executed with a monitoring part; a decryption part for acquiring readout data by decrypting the encrypted data; and an error detection part which acquires a first error detection result by performing an error detection process on the readout data and the first code and a second error detection result by performing an error detection process on the encrypted data and the second code. The monitoring part stops the decryption part during the monitoring process and determines a deterioration level of memory based on the second error detection result.

Abstract: According to the embodiment, a substrate treating device 10 for treating a semiconductor wafer W using an etchant L containing hydrofluoric acid and nitric acid includes a storage tank 210 that stores the etchant L; a concentration sensor 256 that measures a concentration of nitrous acid in the etchant L; an alcohol feeding line 280 that feeds IPA to the etchant L and maintains the concentration of nitrous acid to a predetermined value or more; and a substrate treating unit 100 that feeds the etchant L in the storage tank 210 to the semiconductor wafer W. The substrate treating device can improve the etching efficiency by efficiently generating nitrous acid, and thereby producing an etchant having a nitrous acid concentration suitable for etching.

Abstract: According to one embodiment, a substrate processing apparatus includes a first liquid supplier, a second liquid supplier, and a controller. The first liquid supplier supplies a substrate with a sulfuric acid solution having a first temperature equal to or higher than the boiling point of hydrogen peroxide water. The second liquid supplier supplies a surface to be treated of the substrate with a mixture of sulfuric acid solution and hydrogen peroxide water having a second temperature lower than the first temperature. The controller controls the first liquid supplier to supply the sulfuric acid solution so as to heat the substrate to the boiling point of hydrogen peroxide water or higher. When the temperature of the substrate becomes equal to or higher than the second temperature, the controller controls the first liquid supplier to stop supplying the sulfuric acid solution and controls the second liquid supplier to supply the mixture.

Abstract: According to one embodiment, a substrate processing apparatus includes a processing chamber, a support part, a heater, and an optical member. In the processing chamber, air flows from the top to the bottom. The support part is located in the processing chamber to support a substrate having a surface to be treated. The heater is arranged so as not to be above the support part and emits light for heating. The optical member is arranged in the processing chamber so as not to be above the support part to guide the light emitted by the heater and having passed above the support part to the surface to be treated of the substrate supported by the support part.

Abstract: According to one embodiment, a processing apparatus includes a container, a processor, a supply unit, a recovery unit, a calculator, and a replenishing liquid supply unit. The container contains buffered hydrogen fluoride. The processor performs processing of a processing object using the buffered hydrogen fluoride. The supply unit supplies the buffered hydrogen fluoride to the processor. The buffered hydrogen fluoride is contained in the container. The recovery unit recovers the buffered hydrogen fluoride used in the processor and supplies the recovered buffered hydrogen fluoride to the container. The calculator calculates an evaporation amount of the buffered hydrogen fluoride. The replenishing liquid supply unit supplies the same amount of a replenishing liquid as the calculated evaporation amount of the buffered hydrogen fluoride to the buffered hydrogen fluoride. The replenishing liquid includes ammonia and water.

Abstract: A substrate processing device 10 has a water removing unit 110 and, when a solvent supply unit 58 supplies a volatile solvent to a surface of a substrate W, the water removing unit 110 supplies a water removing agent to the surface of the substrate W to promote replacement of the cleaning water on the surface of the substrate W with the volatile solvent.

Abstract: According to the embodiment, a substrate treating device 10 for treating a semiconductor wafer W using an etchant L containing hydrofluoric acid and nitric acid includes a storage tank 210 that stores the etchant L; a concentration sensor 256 that measures a concentration of nitrous acid in the etchant L; an alcohol feeding line 280 that feeds IPA to the etchant L and maintains the concentration of nitrous acid to a predetermined value or more; and a substrate treating unit 100 that feeds the etchant L in the storage tank 210 to the semiconductor wafer W. The substrate treating device can improve the etching efficiency by efficiently generating nitrous acid, and thereby producing an etchant having a nitrous acid concentration suitable for etching.

Abstract: A substrate processing device 100 includes a cleaning liquid supply unit 114 supplying a cleaning liquid to a surface of a substrate W, a solvent supply unit 115 supplying a volatile solvent to the surface of the substrate W supplied with the cleaning liquid to replace the cleaning liquid on the surface of the substrate W with the volatile solvent, a heating unit 117 heating the substrate W supplied with the volatile solvent, and a drying unit 118 drying the surface of the substrate W by removing a droplet of the volatile solvent produced on the surface of the substrate W by a heating operation of the heating unit 117, and the heating unit 117 and the drying unit 118 are arranged in a course of transportation of the substrate W transported from the solvent supply unit 115.

Abstract: In a substrate processing device 10 having a heating and drying unit 103 for drying a surface of a substrate W, the heating and drying unit 103 heats upward a vertically downward surface of the substrate W to dry the surface of the substrate by dropping and removing, by gravity, the droplets of the volatile solvent formed on the surface of the substrate W by the heating operation.

Abstract: According to one embodiment, a processing apparatus includes a container, a processor, a supply unit, a recovery unit, a calculator, and a replenishing liquid supply unit. The container contains buffered hydrogen fluoride. The processor performs processing of a processing object using the buffered hydrogen fluoride. The supply unit supplies the buffered hydrogen fluoride to the processor. The buffered hydrogen fluoride is contained in the container. The recovery unit recovers the buffered hydrogen fluoride used in the processor and supplies the recovered buffered hydrogen fluoride to the container. The calculator calculates an evaporation amount of the buffered hydrogen fluoride. The replenishing liquid supply unit supplies the same amount of a replenishing liquid as the calculated evaporation amount of the buffered hydrogen fluoride to the buffered hydrogen fluoride. The replenishing liquid includes ammonia and water.

Abstract: According to one embodiment, a substrate processing apparatus includes a first liquid supplier, a second liquid supplier, and a controller. The first liquid supplier supplies a substrate with a sulfuric acid solution having a first temperature equal to or higher than the boiling point of hydrogen peroxide water. The second liquid supplier supplies a surface to be treated of the substrate with a mixture of sulfuric acid solution and hydrogen peroxide water having a second temperature lower than the first temperature. The controller controls the first liquid supplier to supply the sulfuric acid solution so as to heat the substrate to the boiling point of hydrogen peroxide water or higher. When the temperature of the substrate becomes equal to or higher than the second temperature, the controller controls the first liquid supplier to stop supplying the sulfuric acid solution and controls the second liquid supplier to supply the mixture.

Abstract: According to one embodiment, a substrate processing method is disclosed. The method can include treating a substrate with a first liquid. The substrate has a structural body formed on a major surface of the substrate. The method can include forming a support member supporting the structural body by bringing a second liquid into contact with the substrate wetted by the first liquid, and changing at least a portion of the second liquid into a solid by carrying out at least one of causing the second liquid to react, reducing a quantity of a solvent included in the second liquid, and causing at least a portion of a substance dissolved in the second liquid to be separated. The method can include removing the support member by changing at least a part of the support member from a solid phase to a gaseous phase, without passing through a liquid phase.

Abstract: According to one embodiment, a substrate processing apparatus (1) includes a table (4) configured to support a substrate W, a solvent supply unit (8) configured to supply a volatile solvent to a surface of the substrate W on the table (4), and an irradiator (10) configured to emit light to the substrate W, which has been supplied with the volatile solvent, and function as a heater that heats the substrate W such that a gas layer is formed on the surface of the substrate W to make the volatile solvent into a liquid ball. Thus, it is possible to dry the substrate successfully as well as to suppress pattern collapse.

Abstract: [Problem] To provide a substrate treatment device which can more efficiently heat and more efficiently use a treatment solution to treat the surface of a plate-shaped substrate.

Abstract: According to one embodiment, a substrate processing method is disclosed. The method can include treating a substrate with a first liquid. The substrate has a structural body formed on a major surface of the substrate. The method can include forming a support member supporting the structural body by bringing a second liquid into contact with the substrate wetted by the first liquid, and changing at least a portion of the second liquid into a solid by carrying out at least one of causing the second liquid to react, reducing a quantity of a solvent included in the second liquid, and causing at least a portion of a substance dissolved in the second liquid to be separated. The method can include removing the support member by changing at least a part of the support member from a solid phase to a gaseous phase, without passing through a liquid phase.

Abstract: A substrate processing device 100 includes a solvent replacing unit (organic solvent supply unit 15 and solvent supply unit 34) replacing a cleaning liquid with a volatile solvent of a low concentration, and thereafter further performing replacement with a volatile solvent of a high concentration.

Abstract: A substrate processing device 10 has a water removing unit 110 and, when a solvent supply unit 58 supplies a volatile solvent to a surface of a substrate W, the water removing unit 110 supplies a water removing agent to the surface of the substrate W to promote replacement of the cleaning water on the surface of the substrate W with the volatile solvent.

Abstract: In a substrate processing device 10, a magnetic field forming unit is added to a solvent supply unit 58. The magnetic field forming unit 100 applies a magnetic field to a surface of a substrate W on which a cleaning liquid and a volatile solvent coexist. The magnetic field forming unit stirs and mixes the cleaning liquid and the volatile solvent on the surface of the substrate W to promote replacement of the cleaning liquid with the volatile solvent.

Abstract: A sign language action generating device includes: a word string input unit; a trace creation unit that extracts a sign language action data for each word of a pair of words inputted as a word string and creates a trace between an end point position of a sign language action having the same meaning as a prior word of the pair of words and a start point position thereof having the same meaning as a posterior word; an interference determination unit that determines whether or not interference is generated between parts of a robot on each trace; an action connection unit that connects sign language actions; and an action adjustment unit that adjusts a position coordinate or a velocity of the pair of words within a prescribed threshold of a shift amount or an evaluation function within which meanings of the prior word and the posterior word can be maintained.

Abstract: A nonvolatile semiconductor memory device and a method of reusing the same that allow a good use of the semiconductor device without degrading characteristics even when reused. The semiconductor memory device comprises information holding means for holding information that indicates an operation mode of said memory cell array, a decoder for generating, to said memory cell array, a selection signal to designate at least a read address of said memory cell array in accordance with an address signal that comprises plural bits; and mode setting means for fixing a logical value of at least one bit of said plural bits of said address signal in accordance with the information held by said information holding means, and supplying said address signal, on which fixing of the logical value is effected, to said decoder.